公开(公告)号：US09952766B2

公开(公告)日：2018-04-24

申请号：US14994172

申请日：2016-01-13

申请人： Yeong-Jae Woo ,  Kyoung-Il Bang ,  Sung-Yong Seo ,  Eun-Chu Oh ,  Moon-Sang Kwon ,  Han-Shin Shin

发明人： Yeong-Jae Woo ,  Kyoung-Il Bang ,  Sung-Yong Seo ,  Eun-Chu Oh ,  Moon-Sang Kwon ,  Han-Shin Shin

IPC分类号： G06F3/06 ,  G06F12/02

CPC分类号： G06F3/0604 ,  G06F3/064 ,  G06F3/0653 ,  G06F3/0665 ,  G06F3/068 ,  G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7204

摘要： A memory device capable of performing an overwrite operation, a memory system, and a method of operating the memory system are provided. The method includes receiving one or more write requests, a logical address and data corresponding to the one or more write requests; comparing a result of analyzing at least one of the received one or more write requests, logical address, and data with a threshold value; and writing data using a first update method or a second update method, based on a result of the comparison. When the first update method is selected, the data are written in a region indicated by a physical address corresponding to the logical address according to address mapping information. When the second update method is selected, information of the physical address corresponding to the logical address is changed, and the data are written in a region indicated by the changed physical address.

公开(公告)号：US08341338B2

公开(公告)日：2012-12-25

申请号：US12772452

申请日：2010-05-03

申请人： Jin-Hyuk Lee ,  Jang hwan Kim ,  Han-Chan Jo ,  Yeong-Jae Woo ,  Dong hyun Song

发明人： Jin-Hyuk Lee ,  Jang hwan Kim ,  Han-Chan Jo ,  Yeong-Jae Woo ,  Dong hyun Song

IPC分类号： G06F13/00 ,  G06F12/00 ,  G06F3/00 ,  G06F5/00

CPC分类号： G06F12/0873 ,  G06F2212/214 ,  G06F2212/261

摘要： A data storage device comprises a plurality of memory devices, a buffer memory, and a controller. The plurality of memory devices are connected to a plurality of channels and a plurality of ways. The buffer memory temporarily stores data to be written in the memory devices. The controller stores the data in the buffer memory based on channel and way information of the memory devices.

摘要翻译： 数据存储装置包括多个存储器件，缓冲存储器和控制器。 多个存储器件连接到多个通道和多个通道。 缓冲存储器临时存储要写入存储器件的数据。 控制器基于存储器件的通道和方式信息将数据存储在缓冲存储器中。

公开(公告)号：US20120047318A1

公开(公告)日：2012-02-23

申请号：US13166216

申请日：2011-06-22

申请人： Han Bin Yoon ,  Yeong-Jae Woo ,  Dong Gi Lee ,  Kwang Ho Kim ,  Hyuck-Sun Kwon

发明人： Han Bin Yoon ,  Yeong-Jae Woo ,  Dong Gi Lee ,  Kwang Ho Kim ,  Hyuck-Sun Kwon

IPC分类号： G06F12/02

CPC分类号： G06F3/0616 ,  G06F3/0613 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G06F13/1668 ,  G06F2206/1014

摘要： A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device; and a controller configured to receive a write command from a host and program write data received from the host to the non-volatile memory device in response to the write command. The controller inserts idle time after receiving the write data from the host and/or after programming the write data to the non-volatile memory device.

摘要翻译： 提供半导体存储装置及其节流方法。 半导体存储装置包括非易失性存储装置; 以及控制器，被配置为从主机接收写入命令，并且响应于写入命令将程序写入从主机接收到非易失性存储器设备的数据。 控制器在接收到来自主机的写入数据和/或在将写入数据编程到非易失性存储器件之后插入空闲时间。

公开(公告)号：US20120047317A1

公开(公告)日：2012-02-23

申请号：US13166131

申请日：2011-06-22

申请人： Han Bin YOON ,  Yeong-Jae Woo ,  Dong Gi Lee ,  Young Kug Moon ,  Hyuck-Sun Kwon

发明人： Han Bin YOON ,  Yeong-Jae Woo ,  Dong Gi Lee ,  Young Kug Moon ,  Hyuck-Sun Kwon

IPC分类号： G06F12/00

CPC分类号： G06F3/0613 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G06F2206/1014

摘要： A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device configured to store data in a non-volatile state; and a controller configured to control the non-volatile memory device. The controller calculates a new performance level, compares the calculated performance level with a predetermined reference, and determines the calculated performance level as an updated performance level according to the comparison result.

摘要翻译： 提供半导体存储装置及其节流方法。 半导体存储装置包括：非易失性存储装置，被配置为将数据存储在非易失性状态; 以及控制器，被配置为控制所述非易失性存储器件。 控制器计算新的性能水平，将计算的性能水平与预定参考值进行比较，并根据比较结果将计算出的性能水平确定为更新的性能水平。

公开(公告)号：US08862807B2

公开(公告)日：2014-10-14

申请号：US13166257

申请日：2011-06-22

申请人： Han Bin Yoon ,  Yeong-Jae Woo ,  Dong Gi Lee ,  Young Kug Moon ,  Hyuck-Sun Kwon

发明人： Han Bin Yoon ,  Yeong-Jae Woo ,  Dong Gi Lee ,  Young Kug Moon ,  Hyuck-Sun Kwon

IPC分类号： G06F12/00

CPC分类号： G06F3/0613 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G06F2206/1014

摘要： A semiconductor storage device (SSD) and a method of throttling performance of the SSD are provided. The method can include includes gathering at least two workload data items related with to a workload of the semiconductor storage device, estimating the workload using the at least two workload data items, and throttling the performance of the semiconductor storage device according to the estimated workload. Accordingly, a workload that the semiconductor storage device will undergo can be estimated.

摘要翻译： 提供了一种半导体存储设备（SSD）和一种节制SSD性能的方法。 该方法可以包括收集与半导体存储设备的工作负载相关的至少两个工作负载数据项，使用至少两个工作负载数据项估计工作量，以及根据估计的工作量来调节半导体存储设备的性能。 因此，可以估计半导体存储装置将经历的工作量。

公开(公告)号：US08862806B2

公开(公告)日：2014-10-14

申请号：US13166131

申请日：2011-06-22

申请人： Han Bin Yoon ,  Yeong-Jae Woo ,  Dong Gi Lee ,  Young Kug Moon ,  Hyuck-Sun Kwon

发明人： Han Bin Yoon ,  Yeong-Jae Woo ,  Dong Gi Lee ,  Young Kug Moon ,  Hyuck-Sun Kwon

IPC分类号： G06F12/00 ,  G06F3/06

CPC分类号： G06F3/0613 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G06F2206/1014

摘要： A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device configured to store data in a non-volatile state, and a controller configured to control the non-volatile memory device. The controller calculates a new performance level, compares the calculated performance level with a predetermined reference, and determines the calculated performance level as an updated performance level according to the comparison result.

摘要翻译： 提供半导体存储装置及其节流方法。 半导体存储装置包括被配置为以非易失性状态存储数据的非易失性存储装置，以及被配置为控制非易失性存储装置的控制器。 控制器计算新的性能水平，将计算的性能水平与预定参考值进行比较，并根据比较结果将计算出的性能水平确定为更新的性能水平。

公开(公告)号：US08614913B2

公开(公告)日：2013-12-24

申请号：US13028313

申请日：2011-02-16

申请人： Han Bin Yoon ,  Yeong-Jae Woo ,  Jung Been Im

发明人： Han Bin Yoon ,  Yeong-Jae Woo ,  Jung Been Im

IPC分类号： G11C11/34

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/3418

摘要： A method of managing a page buffer of a non-volatile memory device comprises programming least significant bit (LSB) page data from an LSB page buffer into a page of memory cells, and retaining the LSB page data in the LSB page buffer until most significant bit (MSB) page data corresponding to the LSB page data is programmed in the page.

摘要翻译： 管理非易失性存储器件的页面缓冲器的方法包括将LSB页面缓冲器中的最低有效位（LSB）页数据编程到存储器单元的页中，并将LSB页数据保留在LSB页缓冲器中，直到最高 在页面中编程对应于LSB页数据的位（MSB）页数据。

公开(公告)号：US09891838B2

公开(公告)日：2018-02-13

申请号：US14995758

申请日：2016-01-14

申请人： Yeong-Jae Woo ,  Sungyong Seo ,  Otae Bae ,  Hyun-Seung Jei

发明人： Yeong-Jae Woo ,  Sungyong Seo ,  Otae Bae ,  Hyun-Seung Jei

IPC分类号： G06F3/06 ,  G06F11/14 ,  G06F17/30

CPC分类号： G06F3/061 ,  G06F3/0616 ,  G06F3/064 ,  G06F3/0655 ,  G06F3/0679 ,  G06F11/1435 ,  G06F12/0246 ,  G06F17/3012

摘要： A method of operating a memory system including a nonvolatile memory, having a meta data region and a user data region, and a memory controller having a meta data manager. The method includes programming data to a memory block of the user data region and, by operation of the meta data manager, generating a meta log based on the programming. The meta log is stored to the memory controller. Upon a power-off operation, selectively storing the meta log to the meta data region of the nonvolatile memory based on status information of the nonvolatile memory.

公开(公告)号：US08856424B2

公开(公告)日：2014-10-07

申请号：US13166216

申请日：2011-06-22

申请人： Han Bin Yoon ,  Yeong-Jae Woo ,  Dong Gi Lee ,  Kwang Ho Kim ,  Hyuck-Sun Kwon

发明人： Han Bin Yoon ,  Yeong-Jae Woo ,  Dong Gi Lee ,  Kwang Ho Kim ,  Hyuck-Sun Kwon

IPC分类号： G06F12/00 ,  G06F13/16 ,  G06F3/06

CPC分类号： G06F3/0616 ,  G06F3/0613 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G06F13/1668 ,  G06F2206/1014

摘要： A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device, and a controller configured to receive a write command from a host and program and to write data received from the host to the non-volatile memory device in response to the write command. The controller inserts idle time after receiving the write data from the host and/or after programming the write data to the non-volatile memory device.

摘要翻译： 提供半导体存储装置及其节流方法。 半导体存储装置包括非易失性存储装置，以及控制器，被配置为从主机和程序接收写入命令，并且响应写入命令将从主机接收到的数据写入到非易失性存储器装置。 控制器在接收到来自主机的写入数据和/或在将写入数据编程到非易失性存储器件之后插入空闲时间。

公开(公告)号：US20120047319A1

公开(公告)日：2012-02-23

申请号：US13166257

申请日：2011-06-22

申请人： Han Bin YOON ,  Yeong-Jae Woo ,  Dong Gi Lee ,  Young Kug Moon ,  Hyuck-Sun Kwon

发明人： Han Bin YOON ,  Yeong-Jae Woo ,  Dong Gi Lee ,  Young Kug Moon ,  Hyuck-Sun Kwon

IPC分类号： G06F12/00

CPC分类号： G06F3/0613 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G06F2206/1014

摘要： A semiconductor storage device (SSD) and a method of throttling performance of the SSD. The method can include gathering at least two workload data items related with a workload of the semiconductor storage device, estimating the workload using the at least two workload data items, and throttling the performance of the semiconductor storage device according to the estimated workload. Accordingly, a workload that the semiconductor storage device will undergo can be estimated.

摘要翻译： 一种半导体存储设备（SSD）和一种节制SSD性能的方法。 该方法可以包括收集与半导体存储设备的工作负载相关的至少两个工作负载数据项，使用至少两个工作负载数据项估计工作量，以及根据所估计的工作量来调节半导体存储设备的性能。 因此，可以估计半导体存储装置将经历的工作量。