公开(公告)号：US07422774B2

公开(公告)日：2008-09-09

申请号：US11076181

申请日：2005-03-09

申请人： Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric Hollar ,  Kang Sub Yim

发明人： Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric Hollar ,  Kang Sub Yim

IPC分类号： B05D3/06 ,  B05D5/12 ,  C23C16/56 ,  C23C16/40 ,  C23C16/42 ,  C23C16/48 ,  C23C16/50

CPC分类号： C23C16/401 ,  B05D1/60 ,  B05D3/068 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/7681

摘要： The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2.5 and a hardness greater than 0.5 GPa.

摘要翻译： 本发明通常提供使用电子束处理沉积低介电常数膜的方法。 在一个方面，该方法包括在足以沉积包含至少一个环状基团的非固化膜的沉积条件下将包含一种或多种有机硅化合物和一种或多种具有至少一个环状基团的烃化合物的气体混合物递送到基底表面 组在基板表面上。 该方法还包括在足以提供小于2.5的介电常数和大于0.5GPa的硬度的固化条件下使用电子束从非固化膜中基本上除去至少一个环状基团。

公开(公告)号：US07060330B2

公开(公告)日：2006-06-13

申请号：US10302393

申请日：2002-11-22

申请人： Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric Hollar ,  Kang Sub Yim

发明人： Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric Hollar ,  Kang Sub Yim

IPC分类号： C23C16/56

CPC分类号： C23C16/401 ,  B05D1/60 ,  B05D3/068 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/7681

摘要： The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2.5 and a hardness greater than 0.5 GPa.

摘要翻译： 本发明通常提供使用电子束处理沉积低介电常数膜的方法。 在一个方面，该方法包括在足以沉积包含至少一个环状基团的非固化膜的沉积条件下将包含一种或多种有机硅化合物和一种或多种具有至少一个环状基团的烃化合物的气体混合物递送到基底表面 组在基板表面上。 该方法还包括在足以提供小于2.5的介电常数和大于0.5GPa的硬度的固化条件下使用电子束从非固化膜中基本上除去至少一个环状基团。

公开(公告)号：US20050153073A1

公开(公告)日：2005-07-14

申请号：US11076181

申请日：2005-03-09

申请人： Yi Zheng ,  Srinivas Nemani ,  Li-Qun Xia ,  Eric Hollar ,  Kang Yim

发明人： Yi Zheng ,  Srinivas Nemani ,  Li-Qun Xia ,  Eric Hollar ,  Kang Yim

IPC分类号： B05D3/06 ,  B05D7/24 ,  C23C16/40 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/312 ,  C23C16/00 ,  H01L29/76

CPC分类号： C23C16/401 ,  B05D1/60 ,  B05D3/068 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/7681

摘要： The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2.5 and a hardness greater than 0.5 GPa.

摘要翻译： 本发明通常提供使用电子束处理沉积低介电常数膜的方法。 在一个方面，该方法包括在足以沉积包含至少一个环状基团的非固化膜的沉积条件下将包含一种或多种有机硅化合物和一种或多种具有至少一个环状基团的烃化合物的气体混合物递送到基底表面 组在基板表面上。 该方法还包括在足以提供小于2.5的介电常数和大于0.5GPa的硬度的固化条件下使用电子束从非固化膜中基本上除去至少一个环状基团。