公开(公告)号：US20120063034A1

公开(公告)日：2012-03-15

申请号：US12880953

申请日：2010-09-13

申请人： Yimin Hsu ,  Cherngye Hwang ,  Simon Huangchung Liao ,  Stefan Maat

发明人： Yimin Hsu ,  Cherngye Hwang ,  Simon Huangchung Liao ,  Stefan Maat

IPC分类号： G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3932 ,  G11B2005/3996

摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor, like a CPP MR disk drive read head, has an improved insulating structure surrounding the stack of layers making up the sensor. The sensor has a first silicon nitride layer with a thickness between about 1 and 5 nm on the side edges of the sensor and on regions of the bottom shield layer adjacent the sensor below the sensor's ferromagnetic biasing layer. The sensor has a second silicon nitride layer with a thickness between about 2 and 5 nm on the back edge of the sensor and on the region of the bottom shield layer adjacent the sensor back edge, and a substantially thicker metal oxide layer on the second silicon nitride layer. The insulating structure prevents edge damage at the perimeter of the sensor and thus allows for the fabrication of CPP MR read heads with substantially smaller dimensions.

摘要翻译： 电流垂直平面（CPP）磁阻（MR）传感器，如CPP MR磁盘驱动器读头，具有围绕构成传感器的层叠层的改进的绝缘结构。 传感器具有在传感器的侧边缘上的厚度在约1和5nm之间的第一氮化硅层以及与传感器的铁磁偏置层下方的传感器相邻的底部屏蔽层的区域。 传感器具有在传感器的后边缘上和厚度在约2和5nm之间的第二氮化硅层，并且在与底部屏蔽层相邻的传感器后边缘的区域上，以及在第二硅上的基本上较厚的金属氧化物层 氮化物层。 绝缘结构防止传感器周边的边缘损坏，从而允许制造具有基本较小尺寸的CPP MR读取头。

公开(公告)号：US08178158B2

公开(公告)日：2012-05-15

申请号：US12131863

申请日：2008-06-02

申请人： Thomas R. Berthold ,  Matthew J. Carey ,  Jeffrey R. Childress ,  Jordan Asher Katine ,  Stefan Maat

发明人： Thomas R. Berthold ,  Matthew J. Carey ,  Jeffrey R. Childress ,  Jordan Asher Katine ,  Stefan Maat

IPC分类号： G11B5/00 ,  G11B5/127 ,  G11B5/133

CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y30/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/005 ,  H01F10/3259 ,  H01F10/3272

摘要： A method of making a current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor with a confined-current-path (CCP) layer uses an array of self-assembled ferritin protein molecules with inorganic cores to make the CCP layer in the sensor stack. In one embodiment, the ferritin molecules with cores of insulating oxide particles are deposited on an electrically conductive support layer and the ferritin molecules are dissolved, leaving an array of insulating oxide particles. An electrically conducting layer is deposited over the oxide particles and into the regions between the oxide particles to form the CCP layer. In another embodiment, the ferritin molecules with inorganic particles in their cores are deposited on an electrically insulating support layer and the ferritin molecules are dissolved, leaving an array of inorganic particles that function as an etch mask. The insulating support layer is then etched through the mask to form vias down to the underlying layer on which the support layer is formed. An electrically conducting layer is then deposited to form the CCP layer.

摘要翻译： 使用限制电流路径（CCP）层制造电流垂直于平面的巨磁阻（CPP-GMR）传感器的方法使用具有无机芯的自组装铁蛋白分子阵列来制备CCP 传感器堆叠中的层。 在一个实施方案中，具有绝缘氧化物颗粒核心的铁蛋白分子沉积在导电支撑层上，铁蛋白分子溶解，留下绝缘氧化物颗粒阵列。 将导电层沉积在氧化物颗粒上并进入氧化物颗粒之间的区域中以形成CCP层。 在另一个实施方案中，其核心中具有无机颗粒的铁蛋白分子沉积在电绝缘支撑层上，并且铁蛋白分子被溶解，留下用作蚀刻掩模的无机颗粒阵列。 然后通过掩模蚀刻绝缘支撑层，以形成通向下面到其上形成有支撑层的下层的通孔。 然后沉积导电层以形成CCP层。

公开(公告)号：US08154829B2

公开(公告)日：2012-04-10

申请号：US12553864

申请日：2009-09-03

申请人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

发明人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

IPC分类号： G11B5/127

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909

摘要： A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording hard disk drive, has a magnesium oxide (MgO) tunneling barrier layer and a ferromagnetic underlayer beneath and in direct contact with the MgO tunneling barrier layer. The ferromagnetic underlayer comprises a crystalline material according to the formula (CoxFe(100-x))(100-y)Gey, where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 26 and 37. The ferromagnetic underlayer may be the CoxFe(100-x))(100-y)Gey portion of a bilayer of two ferromagnetic layers, for example a CoFe/(CoxFe(100-x))(100-y)Gey bilayer. The specific composition of the ferromagnetic underlayer improves the crystallinity of the MgO tunneling barrier after annealing and improves the tunneling magnetoresistance of the TMR device.

摘要翻译： 隧道磁阻（TMR）器件，如磁记录硬盘驱动器的TMR读头，具有氧化镁（MgO）隧道势垒层和在MgO隧道势垒层下面直接接触的铁磁性底层。 铁磁底层包含根据式（CoxFe（100-x））（100-y）Gey的结晶材料，其中下标表示原子百分比，x在约45和55之间，y在约26和37之间。 铁磁性底层可以是两个铁磁层的双层的CoxFe（100-x））（100-y）Gey部分，例如CoFe /（CoxFe（100-x））（100-y）Gey双层。 铁磁性底层的具体组成提高了退火后MgO隧道势垒的结晶度，提高了TMR器件的隧穿磁阻。

公开(公告)号：US07957107B2

公开(公告)日：2011-06-07

申请号：US12502764

申请日：2009-07-14

申请人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat ,  Neil Smith

发明人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat ,  Neil Smith

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996

摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL1), a second free ferromagnetic layer (FL2), and an antiparallel (AP) coupling (APC) layer that couples FL1 and FL2 together antiferromagnetically with the result that FL1 and FL2 have substantially antiparallel magnetization directions and rotate together in the presence of a magnetic field. The thickness of FL1 is preferably greater than the spin-diffusion length of the electrons in the FL1 material. The minimum thickness for FL2 is a thickness resulting in a FL2 magnetic moment equivalent to at least 10 Å Ni80Fe20 and preferably to at least 15 Å Ni80Fe20. The CPP sensor operates specifically with the conventional sense current (opposite the electron current) directed from the pinned ferromagnetic layer to the APF structure, which results in suppression of current-induced noise.

摘要翻译： 电流垂直平面（CPP）磁阻传感器具有作为自由层的反向平行自由（APF）结构和施加的偏置或感测电流的特定方向。 （APF）结构具有第一自由铁磁（FL1），第二自由铁磁层（FL2）和反FL-FL2与FL2耦合的反并联（AP）耦合（APC）层，其结果是FL1和FL2具有实质上 反平行磁化方向，并且在存在磁场的情况下一起旋转。 FL1的厚度优选大于FL1材料中的电子的自旋扩散长度。 FL2的最小厚度是导致等于至少10埃NiFeFe 2的FL2磁矩并且优选至少为15埃的Ni38Fe20的厚度。 CPP传感器与从钉扎铁磁层引导到APF结构的常规感测电流（与电子电流相反）特别地工作，这导致电流引起的噪声的抑制。

公开(公告)号：US07957106B2

公开(公告)日：2011-06-07

申请号：US11742313

申请日：2007-04-30

申请人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

发明人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  H01L43/08 ,  Y10T428/1121

摘要： Magnetoresistive (MR) read elements and associated methods of fabrication are disclosed. A free layer and/or a pinned layer of an MR read element are formed from a magnetic material such as Co2−x−yMn1+xAl1+y, Co2−x−yMn1+xSi1+y, Co2−x−yMn1+xGe1+y, and Co2−x−yFe1+xSi1+y, where x and y are selected to create an off-stoichiometric alloy having a crystalline structure that is chemically disordered. The chemically disordered magnetic material has a lower spin-polarization than a Heusler alloy, but still exhibits acceptable GMR amplitudes and low spin-torque noise.

摘要翻译： 公开了磁阻（MR）读取元件和相关的制造方法。 MR读取元件的自由层和/或固定层由诸如Co2-x-yMn1 + xAl1 + y，Co2-x-yMn1 + xSi1 + y，Co2-x-yMn1 + xGe1 + y和Co2-x-yFe1 + xSi1 + y，其中x和y被选择以产生具有化学紊乱的晶体结构的非化学计量合金。 化学无序磁性材料具有比Heusler合金更低的自旋极化，但仍然表现出可接受的GMR振幅和低的自旋扭矩噪声。

公开(公告)号：US20090297700A1

公开(公告)日：2009-12-03

申请号：US12131863

申请日：2008-06-02

申请人： Thomas R. Berthold ,  Matthew J. Carey ,  Jeffrey R. Childress ,  Jordan Asher Katine ,  Stefan Maat

发明人： Thomas R. Berthold ,  Matthew J. Carey ,  Jeffrey R. Childress ,  Jordan Asher Katine ,  Stefan Maat

IPC分类号： B05D5/12

CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y30/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/005 ,  H01F10/3259 ,  H01F10/3272

摘要： A method of making a current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor with a confined-current-path (CCP) layer uses an array of self-assembled ferritin protein molecules with inorganic cores to make the CCP layer in the sensor stack. In one embodiment, the ferritin molecules with cores of insulating oxide particles are deposited on an electrically conductive support layer and the ferritin molecules are dissolved, leaving an array of insulating oxide particles. An electrically conducting layer is deposited over the oxide particles and into the regions between the oxide particles to form the CCP layer. In another embodiment, the ferritin molecules with inorganic particles in their cores are deposited on an electrically insulating support layer and the ferritin molecules are dissolved, leaving an array of inorganic particles that function as an etch mask. The insulating support layer is then etched through the mask to form vias down to the underlying layer on which the support layer is formed. An electrically conducting layer is then deposited to form the CCP layer.

摘要翻译： 使用限制电流路径（CCP）层制造电流垂直于平面的巨磁阻（CPP-GMR）传感器的方法使用具有无机芯的自组装铁蛋白分子阵列来制备CCP 传感器堆叠中的层。 在一个实施方案中，具有绝缘氧化物颗粒核心的铁蛋白分子沉积在导电支撑层上，铁蛋白分子溶解，留下绝缘氧化物颗粒阵列。 将导电层沉积在氧化物颗粒上并进入氧化物颗粒之间的区域中以形成CCP层。 在另一个实施方案中，其核心中具有无机颗粒的铁蛋白分子沉积在电绝缘支撑层上，并且铁蛋白分子被溶解，留下用作蚀刻掩模的无机颗粒阵列。 然后通过掩模蚀刻绝缘支撑层，以形成通向下面到其上形成有支撑层的下层的通孔。 然后沉积导电层以形成CCP层。

公开(公告)号：US20090168269A1

公开(公告)日：2009-07-02

申请号：US11966017

申请日：2007-12-28

申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat ,  Neil Smith

发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat ,  Neil Smith

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/132 ,  H01F10/3272

摘要： A current perpendicular to plane magnetoresistive sensor having improved resistance amplitude change and reduced spin torque noise. The sensor has an antiparallel coupled pinned layer structure with at least one of the layers of the pinned layer structure includes a high spin polarization material such as Co2FeGe. The sensor can also include an antiparallel coupled free layer.

摘要翻译： 垂直于平面磁阻传感器的电流具有改善的电阻幅度变化和减少的自旋转矩噪声。 传感器具有反平行耦合的钉扎层结构，其中被钉扎层结构的至少一个层包括诸如Co 2 FeGe的高自旋极化材料。 传感器还可以包括反平行耦合的自由层。

公开(公告)号：US07457085B2

公开(公告)日：2008-11-25

申请号：US11096636

申请日：2005-03-31

申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Eric Edward Fullerton ,  Stefan Maat

发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Eric Edward Fullerton ,  Stefan Maat

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  G11B5/3932 ,  H01F10/16 ,  H01F10/30 ,  H01F10/3272 ,  H01F41/306 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive sensor having a hard bias layer with an engineered magnetic anisotropy in a direction substantially parallel with the medium facing surface. The hard bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness on its surface for example in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic bias layers deposited there over.

摘要翻译： 磁阻传感器具有在与介质面对表面基本平行的方向上具有工程磁各向异性的硬偏置层。 硬偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。 已经以相对于正常的角度执行离子束蚀刻，以便在其表面上引起各向异性的粗糙度，例如以定向的波纹或小面的形式。 各向异性粗糙度在其上沉积的硬磁偏置层中引起基本平行于面向介质的表面的单轴磁各向异性。

公开(公告)号：US20080268290A1

公开(公告)日：2008-10-30

申请号：US11742313

申请日：2007-04-30

申请人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

发明人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

IPC分类号： G11B5/39

CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  H01L43/08 ,  Y10T428/1121

摘要： Magnetoresistive (MR) read elements and associated methods of fabrication are disclosed. A free layer and/or a pinned layer of an MR read element are formed from a magnetic material such as Co2−x−yMn1+xAl1+y, Co2−x−yMn1+xSi1+y, Co2−x−yMn1+xGe1+y, and Co2−x−yFe1+xSi1+y, where x and y are selected to create an off-stoichiometric alloy having a crystalline structure that is chemically disordered. The chemically disordered magnetic material has a lower spin-polarization than a Heusler alloy, but still exhibits acceptable GMR amplitudes and low spin-torque noise.

摘要翻译： 公开了磁阻（MR）读取元件和相关的制造方法。 MR读取元件的自由层和/或钉扎层由诸如Co 2-xy Mn 1 + x Al 1 + 1的磁性材料形成， Co 2-xy Mn 1 + x 1 Si 1 + y 2，Co 2-xy > Mn 1 + x 1 Ge + 1 + y＆gt;和Co 2-xy Fe 1 + x Si > 1 + y

公开(公告)号：US07440227B2

公开(公告)日：2008-10-21

申请号：US11069414

申请日：2005-02-28

申请人： Amitava Chattopadhyay ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alvin Gurney

发明人： Amitava Chattopadhyay ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alvin Gurney

IPC分类号： G11B5/37

CPC分类号： G11B5/376

摘要： A magnetic head has a sensor which employs the “Hall effect”. In one illustrative example, the sensor includes a generally planar body made of a semiconductor heterostructure; first and second contacts comprising first and second drains, respectively, which are formed over a first end of the body and spaced equally apart from a centerline of the body; and a third contact comprising a source formed over a second end of the body which is opposite the first end of the body. The semiconductor heterostructure is comprised of a high mobility two-dimensional electron or hole gas close to an air bearing surface (ABS) of the magnetic head so as to be exposed to magnetic field lines substantially normal to it from magnetically recorded bits. Advantageously, the sensor does not require magnetic materials utilized in conventional sensors and therefore does not suffer from magnetic noise associated therewith.

摘要翻译： 磁头具有采用“霍尔效应”的传感器。 在一个说明性示例中，传感器包括由半导体异质结构制成的大体平面体; 第一和第二触头分别包括第一和第二漏极，它们分别形成在主体的第一端上并且与主体的中心线间隔开; 以及第三触点，其包括形成在所述主体的与所述主体的第一端相对的第二端上的源。 半导体异质结构包括靠近磁头的空气轴承表面（ABS）的高迁移率二维电子或空穴气体，以便从磁记录钻头暴露于基本垂直于其的磁场线。 有利地，传感器不需要在常规传感器中使用的磁性材料，因此不会与其相关的磁性噪声。