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公开(公告)号:US20100313941A1
公开(公告)日:2010-12-16
申请号:US12482606
申请日:2009-06-11
申请人: Ying Jun James HUANG , Stephen DAY
发明人: Ying Jun James HUANG , Stephen DAY
CPC分类号: H01L31/035281 , H01L31/03529 , H01L31/03685 , H01L31/03762 , H01L31/068 , H01L31/0687 , H01L31/075 , Y02E10/544 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要: A vertical multi-junction photovoltaic device includes a structured substrate including a plurality of substantially vertical elongated structures protruding from a planar surface of the structured substrate. An areal density of the elongated structures at a first sliced plane parallel to the planer surface is different than an areal density of the elongated structures at a second sliced plane parallel to the planar surface. The device further includes least a first sub-cell and a second sub-cell, each having a corresponding vertical p-n or p-i-n junction formed of conformal layers, the first sub-cell being formed in a first region incorporating the first sliced plane and the second sub-cell being formed above the first sub-cell in a second region incorporating the second sliced plane.
摘要翻译: 垂直多结光伏器件包括结构化衬底,其包括从结构化衬底的平坦表面突出的多个基本垂直的细长结构。 在平行于平面的第一切片平面上的细长结构的面密度不同于平行于平面的第二切片平面上的细长结构的面密度。 该器件还包括至少一个第一子单元和第二子单元,每个子单元具有由共形层形成的对应的垂直pn或pin结,第一子单元形成在包含第一切割平面的第一区域中,第二子单元 在包含第二切片平面的第二区域中形成在第一子单元上方的子单元。
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公开(公告)号:US20130220406A1
公开(公告)日:2013-08-29
申请号:US13406087
申请日:2012-02-27
IPC分类号: H01L31/0352 , H01L31/18 , B82Y99/00
CPC分类号: H01L31/035281 , B82Y30/00 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要: A non-close-packed vertical junction photovoltaic device includes a substrate, a two-dimensional array of elongate nanostructures extending substantially perpendicularly from a surface of the substrate, and a thin film solar cell disposed over the nanostructures such that the thin film solar cell substantially conforms to the topography of the nanostructures. An average separation of nearest neighbor solar cell coated nanostructures is greater than zero and less than a vacuum wavelength of light corresponding to a band gap of absorption. The thin film solar cell may include an active region that conforms to the elongate nanostructures, a first electrode that conforms to a surface of the active region, and a second electrode. A separation of opposing outer surfaces of the first electrode extending along adjacent elongate nanostructures is greater than zero and less than the vacuum wavelength of the light corresponding to the band gap of the active region.
摘要翻译: 非紧密堆积的垂直结光伏器件包括衬底,从衬底的表面基本上垂直延伸的细长纳米结构的二维阵列,以及设置在纳米结构上的薄膜太阳能电池,使得薄膜太阳能电池基本上 符合纳米结构的形貌。 最近相邻的太阳能电池涂覆的纳米结构的平均分离大于零并且小于对应于吸收带隙的光的真空波长。 薄膜太阳能电池可以包括符合细长纳米结构的有源区,符合有源区的表面的第一电极和第二电极。 沿着相邻的细长纳米结构延伸的第一电极的相对的外表面的分离大于零并且小于对应于有源区的带隙的光的真空波长。
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公开(公告)号:US20090242260A1
公开(公告)日:2009-10-01
申请号:US12413660
申请日:2009-03-30
CPC分类号: H05K1/11 , H01L21/6835 , H01L23/5387 , H01L24/66 , H01L24/69 , H01L25/0652 , H01L25/50 , H01L2221/68368 , H01L2225/06527 , H01L2225/06579 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H05K1/185 , H05K3/303 , H01L2924/00
摘要: A method of fabricating a device structure, comprises: forming an insulating layer (3b) over a first set of devices disposed over a substrate (3); forming one or more vias in the insulating layer; disposing a second set of devices (6) over the insulating layer, wherein devices of the second set comprise respective electrical contacts (6a) and are disposed over the insulating layer (3b) such that a side on which a contact (6a) can be accessed faces the substrate (3); and forming one or more electrical contacts between the first set of devices and the second set of devices (6) through the via(s). The second set of devices and at least one via are positioned such that one or more of the vias lies at least partially within the footprint of two devices, each belonging to a different device layer.
摘要翻译: 一种制造器件结构的方法,包括:在设置在衬底(3)之上的第一组器件上形成绝缘层(3b); 在绝缘层中形成一个或多个通孔; 在所述绝缘层上设置第二组器件(6),其中所述第二组器件的器件包括相应的电触点(6a)并且设置在所述绝缘层(3b)上方,使得接触件(6a)可以在其上 被访问面对基板(3); 以及通过所述通孔在所述第一组装置和所述第二组装置(6)之间形成一个或多个电触点。 第二组装置和至少一个通孔被定位成使得一个或多个通孔至少部分地位于两个装置的覆盖区内,每个装置属于不同的装置层。
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