Electron source structure covered with resistance film
    5.
    发明授权
    Electron source structure covered with resistance film 失效
    电阻源结构覆盖电阻膜

    公开(公告)号:US07064475B2

    公开(公告)日:2006-06-20

    申请号:US10740415

    申请日:2003-12-22

    IPC分类号: H01J1/05

    摘要: To provide an antistatic film that requires low power consumption and provides satisfactory electric contact, as a measure for preventing an insulating substrate surface having an electronic device formed thereon from being charged. The electronic device includes: an insulating substrate; a conductor; and a resistance film connected with the conductor, the conductor and the resistance film being formed on the insulating substrate, characterized in that the resistance film has a larger thickness in a connection region with the conductor than a thickness in portions other than the connection region.

    摘要翻译: 为了提供需要低功耗并提供令人满意的电接触的抗静电膜,作为防止其上形成有电子器件的绝缘衬底表面带电的措施。 电子装置包括:绝缘基板; 指挥 以及与所述导体连接的电阻膜,所述导体和所述电阻膜形成在所述绝缘基板上,其特征在于,所述电阻膜在与所述导体的连接区域中的厚度大于所述连接区域以外的部分的厚度。

    Electronic device, electron source and manufacturing method for electronic device
    8.
    发明授权
    Electronic device, electron source and manufacturing method for electronic device 失效
    电子设备,电子源和电子设备的制造方法

    公开(公告)号:US07442404B2

    公开(公告)日:2008-10-28

    申请号:US11406414

    申请日:2006-04-19

    IPC分类号: B05D5/12 B05D3/02

    摘要: To provide an antistatic film that requires low power consumption and provides satisfactory electric contact, as a measure for preventing an insulating substrate surface having an electronic device formed thereon from being charged. The electronic device includes: an insulating substrate; a conductor; and a resistance film connected with the conductor, the conductor and the resistance film being formed on the insulating substrate, characterized in that the resistance film has a larger thickness in a connection region with the conductor than a thickness in portions other than the connection region.

    摘要翻译: 为了提供需要低功耗并提供令人满意的电接触的抗静电膜,作为防止其上形成有电子器件的绝缘衬底表面带电的措施。 电子装置包括:绝缘基板; 指挥 以及与所述导体连接的电阻膜,所述导体和所述电阻膜形成在所述绝缘基板上,其特征在于,所述电阻膜在与所述导体的连接区域中的厚度大于所述连接区域以外的部分的厚度。

    Method for producing a diffraction grating
    9.
    发明授权
    Method for producing a diffraction grating 失效
    用于生产衍射光栅的方法

    公开(公告)号:US5225039A

    公开(公告)日:1993-07-06

    申请号:US882614

    申请日:1992-05-13

    申请人: Noriaki Ohguri

    发明人: Noriaki Ohguri

    IPC分类号: G02B5/18

    CPC分类号: G02B5/1857

    摘要: A phase-shifted diffraction grating for devices such as semiconductor lasers is produced by forming a first diffraction grating pattern of a first material having a reference pitch on a substrate. The substrate is then coated with a second material on both the first material and an exposed portion of the substrate in a region where a second diffraction grating having a pitch which is the reverse of the reference pitch of the first diffraction grating pattern is to be formed. The first material is removed by lift off to obtain the second diffraction grating pattern on the second diffraction grating region. The substrate is etched using the first diffraction grating as an etching mask to form the first diffraction grating and then the substrate is etched with the second diffraction grating pattern as an etching mask to obtain a second diffraction grating continuous with the first diffraction grating. The first diffraction grating pattern may have a rectangular or square shape to stably and accurately remove the first material by lift-off and the boundary between the first and second diffraction gratings can be stably and accurately defined by self-alignment.