公开(公告)号：US07148629B2

公开(公告)日：2006-12-12

申请号：US10606768

申请日：2003-06-27

申请人： Yong Min Ha ,  Chang Yeon Kim ,  Sang Soo Han

发明人： Yong Min Ha ,  Chang Yeon Kim ,  Sang Soo Han

IPC分类号： G09G3/10

CPC分类号： G09G3/006 ,  G09G3/3233 ,  G09G3/3241 ,  G09G3/3283 ,  G09G3/3291 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2310/0254 ,  G09G2310/0256 ,  G09G2310/0297 ,  G09G2320/02 ,  G09G2320/043

摘要： An aging circuit for an organic electro luminescence device includes a plurality of pixels arranged in a matrix at intersection areas of row lines and column lines and an aging circuit having at least one aging AC voltage source to apply a specific aging AC voltage pulse to the pixels.

摘要翻译： 用于有机电致发光器件的老化电路包括在行线和列线的交叉区域以矩阵排列的多个像素，以及具有至少一个老化的AC电压源的老化电路，以将特定的老化的交流电压脉冲施加到像素 。

公开(公告)号：US07924245B2

公开(公告)日：2011-04-12

申请号：US10825365

申请日：2004-04-16

申请人： Chang Yeon Kim ,  Han Sang Lee ,  Myung Ho Lee

发明人： Chang Yeon Kim ,  Han Sang Lee ,  Myung Ho Lee

IPC分类号： G09G3/30

CPC分类号： G09G3/3241 ,  G09G3/32 ,  G09G3/3283 ,  G09G3/3291 ,  G09G2300/0842 ,  G09G2310/0251

摘要： An electro-luminescence display device, including gate lines, data lines crossing the gate lines, pixel cells at crossings of the gate lines and the data lines, a gate driver that sequentially applies a gate signal to the gate lines during one horizontal period, and a plurality of data driving circuits that apply voltage signals to the pixel cells along a gate line during a first time of the horizontal period and applying current signals to the pixel cells during a second time after the first time of the horizontal period.

摘要翻译： 一种电致发光显示装置，包括栅极线，与栅极线交叉的数据线，栅极线和数据线交叉处的像素单元，在一个水平周期期间顺序地将栅极信号施加到栅极线的栅极驱动器，以及 多个数据驱动电路，其在所述水平周期的第一时间期间沿着栅极线向所述像素单元施加电压信号，并且在所述水平周期的所述第一时间之后的第二时间内向所述像素单元施加电流信号。

公开(公告)号：US20070273956A1

公开(公告)日：2007-11-29

申请号：US11646707

申请日：2006-12-27

申请人： Chang Yeon Kim ,  Dae Won Kim

发明人： Chang Yeon Kim ,  Dae Won Kim

IPC分类号： G02B26/00

CPC分类号： G09G3/344 ,  G02F1/167 ,  G02F2001/1678 ,  G09G3/2074 ,  G09G2300/08 ,  G09G2320/0276

摘要： An electronic ink panel comprises an electronic ink layer, a first substrate and a second substrate. The electronic ink layer includes first to third particles responding to voltages in different level ranges. The first substrate has a first electrode facing one surface of the electronic ink layer. The second substrate has a plurality of second electrode patterns of a size of a pixel region. The second substrate faces the other surface of the electronic ink layer.

摘要翻译： 电子墨水面板包括电子墨水层，第一基底和第二基底。 电子墨层包括响应于不同电平范围内的电压的第一至第三粒子。 第一基板具有面对电子墨层的一个表面的第一电极。 第二基板具有多个像素区域尺寸的第二电极图案。 第二基板面对电子墨水层的另一个表面。

公开(公告)号：US06628362B2

公开(公告)日：2003-09-30

申请号：US09781189

申请日：2001-02-13

申请人： Seong Moh Seo ,  Hyun Ho Shin ,  Young Jin Oh ,  Hyun Chang Lee ,  Chang Yeon Kim

发明人： Seong Moh Seo ,  Hyun Ho Shin ,  Young Jin Oh ,  Hyun Chang Lee ,  Chang Yeon Kim

IPC分类号： G02F11343

CPC分类号： G02F1/136213 ,  G02F1/134363

摘要： An in-plane switching mode liquid crystal display device comprises first and second substrates, a plurality of gate and data bus lines defining pixel regions and arranged on the first substrate, a plurality of data electrodes on same plane of the data bus lines these some parts are overlapped with adjacent gate bus line, a passivation layer on the data electrodes, a plurality of common electrodes on the passivation layer these some parts are overlapped with adjacent data electrodes, and a liquid crystal layer between the first and second substrates.

摘要翻译： 面内切换模式液晶显示装置包括第一和第二基板，多个限定像素区域的栅极和数据总线线路，并布置在第一基板上，多个数据电极在数据总线的同一平面上，这些部分 与相邻栅极总线重叠，数据电极上的钝化层，钝化层上的多个公共电极，这些一些部分与相邻的数据电极重叠，以及在第一和第二基板之间的液晶层。

公开(公告)号：US08546819B2

公开(公告)日：2013-10-01

申请号：US13235063

申请日：2011-09-16

申请人： Yeo Jin Yoon ,  Chang Yeon Kim

发明人： Yeo Jin Yoon ,  Chang Yeon Kim

IPC分类号： H01L27/15

CPC分类号： H01L33/60 ,  H01L21/28 ,  H01L21/306 ,  H01L33/0079 ,  H01L33/22

摘要： A method of fabricating a vertical light emitting diode including: growing a low doped first semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first semiconductor; forming an AAO layer having a large number of holes formed therein by anodizing the aluminum layer; etching and patterning the low doped first semiconductor layer using the aluminum layer as a shadow mask, thereby forming grooves; removing the aluminum layer remaining; sequentially forming a high doped first semiconductor layer, an active layer and a second semiconductor layer on the low doped first semiconductor layer with the grooves; forming a metal reflective layer and a conductive substrate on the second semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first semiconductor layer, the electrode pad filled in the grooves and in ohmic contact with the high doped first semiconductor.

摘要翻译： 一种制造垂直发光二极管的方法，包括：在牺牲衬底上生长低掺杂的第一半导体层; 在所述低掺杂的第一半导体上形成铝层; 通过阳极氧化铝层形成其中形成有大量孔的AAO层; 使用铝层作为荫罩来蚀刻和图案化低掺杂的第一半导体层，从而形成凹槽; 去除剩余的铝层; 在所述低掺杂的第一半导体层上顺序地形成具有沟槽的高掺杂的第一半导体层，有源层和第二半导体层; 在所述第二半导体层上形成金属反射层和导电基板; 分离牺牲衬底; 以及在所述低掺杂的第一半导体层的另一个表面上形成电极焊盘，所述电极焊盘填充在所述沟槽中并与所述高掺杂的第一半导体欧姆接触。

公开(公告)号：US08390002B2

公开(公告)日：2013-03-05

申请号：US12251735

申请日：2008-10-15

申请人： Chang Yeon Kim ,  Yeo Jin Yoon

发明人： Chang Yeon Kim ,  Yeo Jin Yoon

IPC分类号： H01L27/15

CPC分类号： H01L33/24 ,  H01L33/14

摘要： There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.

摘要翻译： 提供了一种发光器件及其制造方法。 根据本发明的发光器件包括：衬底; 依次形成在基板上的N型半导体层，有源层和P型半导体层; 通过部分去除至少P型半导体和有源层而形成一个或多个沟槽以暴露N型半导体层; 形成在所述沟槽的侧壁上的第一绝缘层; 以及填充在其中形成有第一绝缘层的沟槽中的导电层。 根据本发明，可以获得均匀的电流扩散的特性，从而均匀地发光，从而提高发光效率。

公开(公告)号：US08053789B2

公开(公告)日：2011-11-08

申请号：US12518846

申请日：2007-12-12

申请人： Yeo Jin Yoon ,  Chang Yeon Kim

发明人： Yeo Jin Yoon ,  Chang Yeon Kim

IPC分类号： H01L27/15

CPC分类号： H01L33/60 ,  H01L21/28 ,  H01L21/306 ,  H01L33/0079 ,  H01L33/22

摘要： There is provided a method of fabricating a vertical light emitting diode. The method comprises the steps of: growing a low doped first conductive semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first conductive semiconductor layer; forming an AAO layer having a large number of holes formed therein by performing anodizing treatment of the aluminum layer; etching and patterning the low doped first conductive semiconductor layer using the aluminum layer with a large number of the holes as a shadow mask to expose a portion of the low doped first conductive semiconductor layer, thereby forming a large number of grooves; removing the aluminum layer remaining on the low doped first conductive semiconductor layer; sequentially forming a high doped first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the low doped first conductive semiconductor layer with a large number of the grooves; forming a metal reflective layer and a conductive substrate on the second conductive semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first conductive semiconductor layer, the electrode pad being filled in a large number of the grooves to be in ohmic contact with the high doped first conductive semiconductor layer.

摘要翻译： 提供了制造垂直发光二极管的方法。 该方法包括以下步骤：在牺牲衬底上生长低掺杂的第一导电半导体层; 在所述低掺杂的第一导电半导体层上形成铝层; 通过对铝层进行阳极氧化处理，形成其中形成有大量孔的AAO层; 使用具有大量孔的铝层作为荫罩来蚀刻和图案化低掺杂的第一导电半导体层，以暴露部分低掺杂的第一导电半导体层，从而形成大量的沟槽; 去除残留在低掺杂的第一导电半导体层上的铝层; 在具有大量凹槽的低掺杂第一导电半导体层上顺序地形成高掺杂的第一导电半导体层，有源层和第二导电半导体层; 在所述第二导电半导体层上形成金属反射层和导电基板; 分离牺牲衬底; 以及在所述低掺杂的第一导电半导体层的另一个表面上形成电极焊盘，所述电极焊盘填充在与所述高掺杂的第一导电半导体层欧姆接触的大量所述沟槽中。

公开(公告)号：US20110003407A1

公开(公告)日：2011-01-06

申请号：US12882449

申请日：2010-09-15

申请人： Chang Yeon Kim ,  Yeo Jin Yoon

发明人： Chang Yeon Kim ,  Yeo Jin Yoon

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01L33/14

摘要： There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.

摘要翻译： 提供了一种发光器件及其制造方法。 根据本发明的发光器件包括：衬底; 依次形成在基板上的N型半导体层，有源层和P型半导体层; 通过部分去除至少P型半导体和有源层而形成一个或多个沟槽以暴露N型半导体层; 形成在所述沟槽的侧壁上的第一绝缘层; 以及填充在其中形成有第一绝缘层的沟槽中的导电层。 根据本发明，可以获得均匀的电流扩散的特性，从而均匀地发光，从而提高发光效率。

公开(公告)号：US20100136722A1

公开(公告)日：2010-06-03

申请号：US12414163

申请日：2009-03-30

申请人： Chang Yeon Kim ,  Tae Joon Ahn

发明人： Chang Yeon Kim ,  Tae Joon Ahn

IPC分类号： H01L51/56

CPC分类号： H01L27/3253 ,  H01L27/3246 ,  H01L51/56

摘要： An organic electro luminescence device and a fabrication method thereof are provided. An array element is formed on a first substrate and an electro luminescent diode is formed on a second substrate. The array element and the electro luminescent diode are electrically connected together by a spacer. A separator divides a sub pixel into a first region and a second region. In the electro luminescent diode, an anode electrode is formed over the first and second regions. An organic electro luminescent layer and a cathode electrode are formed on the anode electrode of one of the first and second regions.

摘要翻译： 提供一种有机电致发光器件及其制造方法。 在第一基板上形成阵列元件，在第二基板上形成电致发光二极管。 阵列元件和电致发光二极管通过间隔物电连接在一起。 分离器将子像素划分为第一区域和第二区域。 在电致发光二极管中，在第一和第二区域上形成阳极电极。 在第一和第二区域之一的阳极上形成有机电致发光层和阴极电极。

公开(公告)号：US20100012969A1

公开(公告)日：2010-01-21

申请号：US12518846

申请日：2007-12-12

申请人： Yeo Jin Yoon ,  Chang Yeon Kim

发明人： Yeo Jin Yoon ,  Chang Yeon Kim

IPC分类号： H01L33/00 ,  H01L21/302 ,  H01L21/28

CPC分类号： H01L33/60 ,  H01L21/28 ,  H01L21/306 ,  H01L33/0079 ,  H01L33/22

摘要： There is provided a method of fabricating a vertical light emitting diode. The method comprises the steps of: growing a low doped first conductive semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first conductive semiconductor layer; forming an AAO layer having a large number of holes formed therein by performing anodizing treatment of the aluminum layer; etching and patterning the low doped first conductive semiconductor layer using the aluminum layer with a large number of the holes as a shadow mask to expose a portion of the low doped first conductive semiconductor layer, thereby forming a large number of grooves; removing the aluminum layer remaining on the low doped first conductive semiconductor layer; sequentially forming a high doped first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the low doped first conductive semiconductor layer with a large number of the grooves; forming a metal reflective layer and a conductive substrate on the second conductive semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first conductive semiconductor layer, the electrode pad being filled in a large number of the grooves to be in ohmic contact with the high doped first conductive semiconductor layer

摘要翻译： 提供了制造垂直发光二极管的方法。 该方法包括以下步骤：在牺牲衬底上生长低掺杂的第一导电半导体层; 在所述低掺杂的第一导电半导体层上形成铝层; 通过对铝层进行阳极氧化处理，形成其中形成有大量孔的AAO层; 使用具有大量孔的铝层作为荫罩来蚀刻和图案化低掺杂的第一导电半导体层，以暴露部分低掺杂的第一导电半导体层，从而形成大量的沟槽; 去除残留在低掺杂的第一导电半导体层上的铝层; 在具有大量凹槽的低掺杂第一导电半导体层上顺序地形成高掺杂的第一导电半导体层，有源层和第二导电半导体层; 在所述第二导电半导体层上形成金属反射层和导电基板; 分离牺牲衬底; 以及在所述低掺杂的第一导电半导体层的另一个表面上形成电极焊盘，所述电极焊盘填充在所述多个沟槽中以与所述高掺杂的第一导电半导体层欧姆接触