公开(公告)号：US08546819B2

公开(公告)日：2013-10-01

申请号：US13235063

申请日：2011-09-16

Applicant: Yeo Jin Yoon ,  Chang Yeon Kim

Inventor： Yeo Jin Yoon ,  Chang Yeon Kim

IPC: H01L27/15

CPC classification number: H01L33/60 ,  H01L21/28 ,  H01L21/306 ,  H01L33/0079 ,  H01L33/22

Abstract: A method of fabricating a vertical light emitting diode including: growing a low doped first semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first semiconductor; forming an AAO layer having a large number of holes formed therein by anodizing the aluminum layer; etching and patterning the low doped first semiconductor layer using the aluminum layer as a shadow mask, thereby forming grooves; removing the aluminum layer remaining; sequentially forming a high doped first semiconductor layer, an active layer and a second semiconductor layer on the low doped first semiconductor layer with the grooves; forming a metal reflective layer and a conductive substrate on the second semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first semiconductor layer, the electrode pad filled in the grooves and in ohmic contact with the high doped first semiconductor.

Abstract translation: 一种制造垂直发光二极管的方法，包括：在牺牲衬底上生长低掺杂的第一半导体层; 在所述低掺杂的第一半导体上形成铝层; 通过阳极氧化铝层形成其中形成有大量孔的AAO层; 使用铝层作为荫罩来蚀刻和图案化低掺杂的第一半导体层，从而形成凹槽; 去除剩余的铝层; 在所述低掺杂的第一半导体层上顺序地形成具有沟槽的高掺杂的第一半导体层，有源层和第二半导体层; 在所述第二半导体层上形成金属反射层和导电基板; 分离牺牲衬底; 以及在所述低掺杂的第一半导体层的另一个表面上形成电极焊盘，所述电极焊盘填充在所述沟槽中并与所述高掺杂的第一半导体欧姆接触。

公开(公告)号：US08390002B2

公开(公告)日：2013-03-05

申请号：US12251735

申请日：2008-10-15

Applicant: Chang Yeon Kim ,  Yeo Jin Yoon

Inventor： Chang Yeon Kim ,  Yeo Jin Yoon

IPC: H01L27/15

CPC classification number: H01L33/24 ,  H01L33/14

Abstract: There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.

Abstract translation: 提供了一种发光器件及其制造方法。 根据本发明的发光器件包括：衬底; 依次形成在基板上的N型半导体层，有源层和P型半导体层; 通过部分去除至少P型半导体和有源层而形成一个或多个沟槽以暴露N型半导体层; 形成在所述沟槽的侧壁上的第一绝缘层; 以及填充在其中形成有第一绝缘层的沟槽中的导电层。 根据本发明，可以获得均匀的电流扩散的特性，从而均匀地发光，从而提高发光效率。

公开(公告)号：US08053789B2

公开(公告)日：2011-11-08

申请号：US12518846

申请日：2007-12-12

Applicant: Yeo Jin Yoon ,  Chang Yeon Kim

Inventor： Yeo Jin Yoon ,  Chang Yeon Kim

IPC: H01L27/15

CPC classification number: H01L33/60 ,  H01L21/28 ,  H01L21/306 ,  H01L33/0079 ,  H01L33/22

Abstract: There is provided a method of fabricating a vertical light emitting diode. The method comprises the steps of: growing a low doped first conductive semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first conductive semiconductor layer; forming an AAO layer having a large number of holes formed therein by performing anodizing treatment of the aluminum layer; etching and patterning the low doped first conductive semiconductor layer using the aluminum layer with a large number of the holes as a shadow mask to expose a portion of the low doped first conductive semiconductor layer, thereby forming a large number of grooves; removing the aluminum layer remaining on the low doped first conductive semiconductor layer; sequentially forming a high doped first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the low doped first conductive semiconductor layer with a large number of the grooves; forming a metal reflective layer and a conductive substrate on the second conductive semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first conductive semiconductor layer, the electrode pad being filled in a large number of the grooves to be in ohmic contact with the high doped first conductive semiconductor layer.

Abstract translation: 提供了制造垂直发光二极管的方法。 该方法包括以下步骤：在牺牲衬底上生长低掺杂的第一导电半导体层; 在所述低掺杂的第一导电半导体层上形成铝层; 通过对铝层进行阳极氧化处理，形成其中形成有大量孔的AAO层; 使用具有大量孔的铝层作为荫罩来蚀刻和图案化低掺杂的第一导电半导体层，以暴露部分低掺杂的第一导电半导体层，从而形成大量的沟槽; 去除残留在低掺杂的第一导电半导体层上的铝层; 在具有大量凹槽的低掺杂第一导电半导体层上顺序地形成高掺杂的第一导电半导体层，有源层和第二导电半导体层; 在所述第二导电半导体层上形成金属反射层和导电基板; 分离牺牲衬底; 以及在所述低掺杂的第一导电半导体层的另一个表面上形成电极焊盘，所述电极焊盘填充在与所述高掺杂的第一导电半导体层欧姆接触的大量所述沟槽中。

公开(公告)号：US20110003407A1

公开(公告)日：2011-01-06

申请号：US12882449

申请日：2010-09-15

Applicant: Chang Yeon Kim ,  Yeo Jin Yoon

Inventor： Chang Yeon Kim ,  Yeo Jin Yoon

IPC: H01L33/00

CPC classification number: H01L33/24 ,  H01L33/14

Abstract: There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.

Abstract translation: 提供了一种发光器件及其制造方法。 根据本发明的发光器件包括：衬底; 依次形成在基板上的N型半导体层，有源层和P型半导体层; 通过部分去除至少P型半导体和有源层而形成一个或多个沟槽以暴露N型半导体层; 形成在所述沟槽的侧壁上的第一绝缘层; 以及填充在其中形成有第一绝缘层的沟槽中的导电层。 根据本发明，可以获得均匀的电流扩散的特性，从而均匀地发光，从而提高发光效率。

公开(公告)号：US20100012969A1

公开(公告)日：2010-01-21

申请号：US12518846

申请日：2007-12-12

Applicant: Yeo Jin Yoon ,  Chang Yeon Kim

Inventor： Yeo Jin Yoon ,  Chang Yeon Kim

IPC: H01L33/00 ,  H01L21/302 ,  H01L21/28

CPC classification number: H01L33/60 ,  H01L21/28 ,  H01L21/306 ,  H01L33/0079 ,  H01L33/22

Abstract: There is provided a method of fabricating a vertical light emitting diode. The method comprises the steps of: growing a low doped first conductive semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first conductive semiconductor layer; forming an AAO layer having a large number of holes formed therein by performing anodizing treatment of the aluminum layer; etching and patterning the low doped first conductive semiconductor layer using the aluminum layer with a large number of the holes as a shadow mask to expose a portion of the low doped first conductive semiconductor layer, thereby forming a large number of grooves; removing the aluminum layer remaining on the low doped first conductive semiconductor layer; sequentially forming a high doped first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the low doped first conductive semiconductor layer with a large number of the grooves; forming a metal reflective layer and a conductive substrate on the second conductive semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first conductive semiconductor layer, the electrode pad being filled in a large number of the grooves to be in ohmic contact with the high doped first conductive semiconductor layer

Abstract translation: 提供了制造垂直发光二极管的方法。 该方法包括以下步骤：在牺牲衬底上生长低掺杂的第一导电半导体层; 在所述低掺杂的第一导电半导体层上形成铝层; 通过对铝层进行阳极氧化处理，形成其中形成有大量孔的AAO层; 使用具有大量孔的铝层作为荫罩来蚀刻和图案化低掺杂的第一导电半导体层，以暴露部分低掺杂的第一导电半导体层，从而形成大量的沟槽; 去除残留在低掺杂的第一导电半导体层上的铝层; 在具有大量凹槽的低掺杂第一导电半导体层上顺序地形成高掺杂的第一导电半导体层，有源层和第二导电半导体层; 在所述第二导电半导体层上形成金属反射层和导电基板; 分离牺牲衬底; 以及在所述低掺杂的第一导电半导体层的另一个表面上形成电极焊盘，所述电极焊盘填充在所述多个沟槽中以与所述高掺杂的第一导电半导体层欧姆接触

公开(公告)号：US08247244B2

公开(公告)日：2012-08-21

申请号：US12882449

申请日：2010-09-15

Applicant: Chang Yeon Kim ,  Yeo Jin Yoon

Inventor： Chang Yeon Kim ,  Yeo Jin Yoon

IPC: H01L21/00

CPC classification number: H01L33/24 ,  H01L33/14

Abstract: There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.

Abstract translation: 提供了一种发光器件及其制造方法。 根据本发明的发光器件包括：衬底; 依次形成在基板上的N型半导体层，有源层和P型半导体层; 通过部分去除至少P型半导体和有源层而形成一个或多个沟槽以暴露N型半导体层; 形成在所述沟槽的侧壁上的第一绝缘层; 以及填充在其中形成有第一绝缘层的沟槽中的导电层。 根据本发明，可以获得均匀的电流扩散的特性，从而均匀地发光，从而提高发光效率。

公开(公告)号：US20090315063A1

公开(公告)日：2009-12-24

申请号：US12251735

申请日：2008-10-15

Applicant: Chang Yeon Kim ,  Yeo Jin Yoon

Inventor： Chang Yeon Kim ,  Yeo Jin Yoon

IPC: H01L33/00

CPC classification number: H01L33/24 ,  H01L33/14

Abstract: There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.

Abstract translation: 提供了一种发光器件及其制造方法。 根据本发明的发光器件包括：衬底; 依次形成在基板上的N型半导体层，有源层和P型半导体层; 通过部分去除至少P型半导体和有源层而形成一个或多个沟槽以暴露N型半导体层; 形成在所述沟槽的侧壁上的第一绝缘层; 以及填充在其中形成有第一绝缘层的沟槽中的导电层。 根据本发明，可以获得均匀的电流扩散的特性，从而均匀地发光，从而提高发光效率。

公开(公告)号：US09847371B2

公开(公告)日：2017-12-19

申请号：US13146073

申请日：2010-02-12

Applicant: Chung Hoon Lee ,  Won Cheol Seo ,  Yeo Jin Yoon ,  Jin Cheol Shin

Inventor： Chung Hoon Lee ,  Won Cheol Seo ,  Yeo Jin Yoon ,  Jin Cheol Shin

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/50 ,  H05B33/08

CPC classification number: H01L27/153 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H05B33/0821 ,  H01L2924/00014

Abstract: A light emitting diode (LED) chip for high voltage operation and an LED package including the same are disclosed. The LED chip includes a substrate, a first array formed on the substrate and including n light emitting cells connected in series, and a second array formed on the substrate and including m (m≦n) light emitting cells connected in series. During operation of the LED chip, the first array and the second array are operated by being connected in reverse parallel to each other. Further, when a driving voltage of the first array is delined as Vd1 and a driving voltage of the second array is defined as Vd2, a difference between Vd1 and Vd2×(n/m) is not more than 2V.

公开(公告)号：US08614458B2

公开(公告)日：2013-12-24

申请号：US12090050

申请日：2006-11-28

Applicant: Yeo Jin Yoon ,  Won Cheol Seo

Inventor： Yeo Jin Yoon ,  Won Cheol Seo

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/005 ,  H01L33/22

Abstract: Disclosed herein are a patterned substrate for a light emitting diode and a light emitting diode employing the patterned substrate. The substrate has top and bottom surfaces. Protrusion patterns are arranged on the top surface of the substrate. Furthermore, recessed regions surround the protrusion patterns. The recessed regions have irregular bottoms. Thus, the protrusion patterns and the recessed regions can prevent light emitted from a light emitting diode from being lost due to the total reflection to thereby improve light extraction efficiency.

Abstract translation: 本文公开了用于发光二极管的图案化衬底和采用图案化衬底的发光二极管。 衬底具有顶表面和底表面。 突出图案布置在基板的顶表面上。 此外，凹陷区域围绕突起图案。 凹陷区域有不规则的底部。 因此，突起图案和凹陷区域可以防止由于全反射而从发光二极管发出的光损失，从而提高光提取效率。

公开(公告)号：US20130146929A1

公开(公告)日：2013-06-13

申请号：US13818267

申请日：2011-04-05

Applicant: Ye Seul Kim ,  Da Yeon Jeong ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh

Inventor： Ye Seul Kim ,  Da Yeon Jeong ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh

IPC: H01L33/60

CPC classification number: H01L33/46 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60

Abstract: Disclosed is a light emitting diode (LED) comprising a light emitting stacked structure and an electrode structure formed to have a pattern on the light emitting stacked structure. The electrode structure of the LED includes a cluster of reflectors disposed along the pattern on the light emitting stacked structure, and a pad material layer formed to entirely cover the reflectors.