公开(公告)号：US6107124A

公开(公告)日：2000-08-22

申请号：US447811

申请日：1999-11-23

申请人： Yong Park ,  Do Hyung Kim ,  Sang Ho Moon

发明人： Yong Park ,  Do Hyung Kim ,  Sang Ho Moon

IPC分类号： H01L27/148 ,  H01L29/768 ,  H01L21/339

CPC分类号： H01L29/76833 ,  H01L27/14812 ,  H01L27/14825

摘要： A charge coupled device is disclosed including: a well formed in a substrate, the well having a conductivity opposite to that of the substrate; a first conductivity type of BCCD region formed on the well; a first lightly doped impurity region formed in a predetermined portion of the first conductivity type of BCCD region; a heavily doped impurity region formed in a predetermined portion of the BCCD region, the heavily doped impurity region having a predetermined distance from the first lightly doped impurity region; a second lightly doped impurity region formed between the first lightly doped impurity region and heavily doped impurity region; a first polysilicon gate formed over a portion of the BCCD region, placed between the first lightly doped impurity region and heavily doped impurity region; and a second polysilicon gate formed over the first lightly doped impurity region. The realization of high speed CCD and simplification of the circuit configuration can be obtained by using one-phase clocking.

摘要翻译： 公开了一种电荷耦合器件，包括：在衬底中形成的阱，所述阱具有与衬底相反的导电性; 形成在井上的第一导电类型的BCCD区; 形成在所述第一导电类型的BCCD区域的预定部分中的第一轻掺杂杂质区; 形成在所述BCCD区域的预定部分中的重掺杂杂质区域，所述重掺杂杂质区域与所述第一轻掺杂杂质区域具有预定距离; 形成在第一轻掺杂杂质区和重掺杂杂质区之间的第二轻掺杂杂质区; 形成在所述BCCD区域的一部分上的第一多晶硅栅极，位于所述第一轻掺杂杂质区域和重掺杂杂质区域之间; 以及形成在第一轻掺杂杂质区上的第二多晶硅栅极。 通过使用单相时钟可以获得高速CCD的实现和简化电路配置。

公开(公告)号：US6043523A

公开(公告)日：2000-03-28

申请号：US960213

申请日：1997-10-29

申请人： Yong Park ,  Do Hyung Kim ,  Sang Ho Moon

发明人： Yong Park ,  Do Hyung Kim ,  Sang Ho Moon

IPC分类号： H01L27/148 ,  H01L29/768

CPC分类号： H01L29/76833 ,  H01L27/14812 ,  H01L27/14825

摘要： A charge coupled device is disclosed including: a well formed in a substrate, the well having a conductivity opposite to that of the substrate; a first conductivity type of BCCD region formed on the well; a first lightly doped impurity region formed in a predetermined portion of the first conductivity type of BCCD region; a heavily doped impurity region formed in a predetermined portion of the BCCD region, the heavily doped impurity region having a predetermined distance from the first lightly doped impurity region; a second lightly doped impurity region formed between the first lightly doped impurity region and heavily doped impurity region; a first polysilicon gate formed over a portion of the BCCD region, placed between the first lightly doped impurity region and heavily doped impurity region; and a second polysilicon gate formed over the first lightly doped impurity region. The realization of high speed CCD and simplification of the circuit configuration can be obtained by using one-phase clocking.

公开(公告)号：US06358768B1

公开(公告)日：2002-03-19

申请号：US09466190

申请日：1999-12-17

申请人： Yong Park ,  Sang Ho Moon

发明人： Yong Park ,  Sang Ho Moon

IPC分类号： H01L2100

CPC分类号： H01L27/14831

摘要： A solid-state image sensor and a fabricating method thereof in which poly gates in a horizontal charge coupled device (hereinafter referred to as HCCD) are made to have different lengths to omit a barrier ion implanting process step, thus simplifying the entire process and maximizing the charge-transferring efficiency are disclosed, the solid-state image sensor having an HCCD and VCCDs including a well region of a second conductivity type formed in a semiconductor substrate of a first conductivity type; a HCCD of the first conductivity type formed on the well region of the second conductivity type; and a plurality of polygate electrodes having sequentially different lengths repeatedly formed on the semiconductor substrate.

摘要翻译： 一种固态图像传感器及其制造方法，其中将水平电荷耦合器件（以下简称为HCCD）中的多晶硅栅极制成具有不同长度以省略势垒离子注入工艺步骤，从而简化了整个工艺并使其最大化 公开了电荷转移效率，具有HCCD的固态图像传感器和形成在第一导电类型的半导体衬底中的包括第二导电类型的阱区的VCCD; 形成在第二导电类型的阱区上的第一导电类型的HCCD; 以及在半导体衬底上重复形成具有顺序不同长度的多个多晶硅电极。

公开(公告)号：US6100553A

公开(公告)日：2000-08-08

申请号：US998766

申请日：1997-12-29

申请人： Yong Park ,  Sang Ho Moon

发明人： Yong Park ,  Sang Ho Moon

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L29/768

CPC分类号： H01L27/14831

摘要： A solid-state image sensor and a fabricating method thereof in which poly gates in a horizontal charge coupled device (hereinafter referred to as HCCD) are made to have different lengths to omit a barrier ion implanting process step, thus simplifying the entire process and maximizing the charge-transferring efficiency are disclosed, the solid-state image sensor having an HCCD and VCCDs including a well region of a second conductivity type formed in a semiconductor substrate of a first conductivity type; a HCCD of the first conductivity type formed on the well region of the second conductivity type; and a plurality of polygate electrodes having sequentially different lengths repeatedly formed on the semiconductor substrate.

摘要翻译： 一种固态图像传感器及其制造方法，其中将水平电荷耦合器件（以下简称为HCCD）中的多晶硅栅极制成具有不同的长度以省略阻挡离子注入工艺步骤，从而简化了整个工艺并使其最大化 公开了电荷转移效率，具有HCCD的固态图像传感器和形成在第一导电类型的半导体衬底中的包括第二导电类型的阱区的VCCD; 形成在第二导电类型的阱区上的第一导电类型的HCCD; 以及在半导体衬底上重复形成具有顺序不同长度的多个多晶硅电极。

公开(公告)号：US20100089179A1

公开(公告)日：2010-04-15

申请号：US12557894

申请日：2009-09-11

申请人： Bong Joo Lee ,  Yong Cheol Kim ,  Sang Ho Moon ,  Ki Hwa Park ,  Byoung Woo Yum

发明人： Bong Joo Lee ,  Yong Cheol Kim ,  Sang Ho Moon ,  Ki Hwa Park ,  Byoung Woo Yum

IPC分类号： G01N1/10

CPC分类号： G01N1/18

摘要： There is provided an automatic sequential sampler for roof-top runoff of rainwater, which comprises: a sensing part, a controlling part and a sampling part, and more particularly, which takes samples of rainwater, at regular intervals, by sensing whether it rains and controlling the rotation and stop of a sample bottle shelf in the sampling part, using a timer and a counter.

摘要翻译： 提供了一种用于雨水屋顶径流的自动顺序采样器，其包括：感测部分，控制部分和采样部分，更具体地，其通过感测是否下雨和定期地采集雨水样本， 使用定时器和计数器控制采样部分中的样品瓶架的旋转和停止。

公开(公告)号：US6147373A

公开(公告)日：2000-11-14

申请号：US213413

申请日：1998-12-17

申请人： Sang Ho Moon

发明人： Sang Ho Moon

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L27/148 ,  H04N5/335 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3728 ,  H01L31/103 ,  H01L31/068

CPC分类号： H01L27/14843 ,  H01L27/14623 ,  H01L27/14687 ,  H01L27/14692

摘要： A solid state image sensor according to the present invention includes a p-type conductivity type well formed in a surface of an n-type conductivity type semiconductor substrate in which a photoelectric conversion region is defined. A photoelectric conversion device (i.e., photodiode) is formed of a PD-N region and a PD-P region in a surface of the p-type conductivity well in the photoelectric conversion region, for converting a signal of light to an electrical signal. A vertical charge transfer region is formed in a surface of the p-type conductivity well in which the photodiode is not formed, and a channel stop layer is formed in a surface of the p-type conductivity well around the PD-N region except for a region between one side of the photodiode and the vertical charge transfer region. A gate insulating film is formed on the semiconductor substrate except for the photodiode, and a transfer gate is formed on the gate insulating film. A first insulating film is formed on the transfer gate, and a second insulating film is formed on the gate insulating film at both sides of the transfer gate. A light-shielding layer is formed at the sides of the photodiode and on the first and second insulating films to be electrically connected with the photodiode. A third insulating film is formed on the light-shielding layer including the photodiode.

公开(公告)号：US08302464B2

公开(公告)日：2012-11-06

申请号：US12557894

申请日：2009-09-11

申请人： Bong Joo Lee ,  Yong Cheol Kim ,  Sang Ho Moon ,  Ki Hwa Park ,  Byoung Woo Yum

发明人： Bong Joo Lee ,  Yong Cheol Kim ,  Sang Ho Moon ,  Ki Hwa Park ,  Byoung Woo Yum

IPC分类号： G01N1/20

CPC分类号： G01N1/18

摘要： There is provided an automatic sequential sampler for roof-top runoff of rainwater, which comprises: a sensing part, a controlling part and a sampling part, and more particularly, which takes samples of rainwater, at regular intervals, by sensing whether it rains and controlling the rotation and stop of a sample bottle shelf in the sampling part, using a timer and a counter.

摘要翻译： 提供了一种用于雨水屋顶径流的自动顺序采样器，其包括：感测部分，控制部分和采样部分，更具体地，其通过感测是否下雨和定期地采集雨水样本， 使用定时器和计数器控制采样部分中的样品瓶架的旋转和停止。

公开(公告)号：US06724425B1

公开(公告)日：2004-04-20

申请号：US09596270

申请日：2000-06-16

申请人： Sang Ho Moon ,  In Kyou Choi

发明人： Sang Ho Moon ,  In Kyou Choi

IPC分类号： H04N5335

CPC分类号： H04N5/2254 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14806

摘要： Solid state image sensor suitable for enhancing sensitivity of charge coupled devices (CCDs) using phase shift of light, and method for fabricating the same, the solid state image sensor including a plurality of photodiodes for generating image charges from incident lights, a plurality of charge coupled devices provided between the photodiodes for transmitting the image charges in one direction, a first flat layer formed on an entire surface of the photodiodes and the charge coupled devices, a plurality of color filter layers formed on the first flat layer to be in correspondence to the photodiodes, a plurality of black layers formed on the first flat layer between the color filter layers, a plurality of phase shift layers selectively formed on the color filter layers to be in correspondence to the photodiodes alternately, a second flat layer formed on an entire surface including the phase shift layers, and a plurality of microlenses formed on the second flat layer to be in correspondence to the photodiodes.

摘要翻译： 适用于增强使用相移的电荷耦合器件（CCD）的灵敏度的固态图像传感器及其制造方法，该固态图像传感器包括用于从入射光产生图像电荷的多个光电二极管，多个电荷 设置在用于在一个方向上传送图像电荷的光电二极管之间的耦合器件，形成在光电二极管的整个表面上的第一平坦层和电荷耦合器件，形成在第一平坦层上的多个滤色器层，以对应于 所述光电二极管，形成在所述滤色器层之间的所述第一平坦层上的多个黑色层，选择性地形成在所述滤色器层上交替地对应于所述光电二极管的多个相移层，形成在整个上的第二平坦层 包括相移层的表面和形成在第二平坦层上的多个微透镜相对应 光电二极管。

公开(公告)号：US06338978B1

公开(公告)日：2002-01-15

申请号：US09637786

申请日：2000-08-11

申请人： Sang Ho Moon

发明人： Sang Ho Moon

IPC分类号： H01L2100

CPC分类号： H01L27/14843 ,  H01L27/14623 ,  H01L27/14687 ,  H01L27/14692

摘要： A solid state image sensor according to the present invention includes a p-type conductivity type well formed in a surface of an n-type conductivity type semiconductor substrate in which a photoelectric conversion region is defined. A photoelectric conversion device (i.e., photodiode) is formed of a PD-N region and a PD-P region in a surface of the p-type conductivity well in the photoelectric conversion region, for converting a signal of light to an electrical signal. A vertical charge transfer region is formed in a surface of the p-type conductivity well in which the photodiode is not formed, and a channel stop layer is formed in a surface of the p-type conductivity well around the PD-N region except for a region between one side of the photodiode and the vertical charge transfer region. A gate insulating film is formed on the semiconductor substrate except for the photodiode, and a transfer gate is formed on the gate insulating film. A first insulating film is formed on the transfer gate, and a second insulating film is formed on the gate insulating film at both sides of the transfer gate. A light-shielding layer is formed at the sides of the photodiode and on the first and second insulating films to be electrically connected with the photodiode. A third insulating film is formed on the light-shielding layer including the photodiode.

摘要翻译： 根据本发明的固态图像传感器包括在n型导电型半导体衬底的表面中形成的p型导电型阱，其中限定了光电转换区域。 光电转换装置（即，光电二极管）由光电转换区域中的p型电导率阱的表面中的PD-N区域和PD-P区域形成，用于将光信号转换为电信号。 在没有形成光电二极管的p型导电性阱的表面形成有垂直电荷转移区域，并且除了除了形成PD-N区域之外，在p型导电性孔的表面形成沟道阻挡层 在光电二极管的一侧和垂直电荷转移区之间的区域。 在除了光电二极管之外的半导体衬底上形成栅极绝缘膜，并且在栅极绝缘膜上形成传输栅极。 在传输栅极上形成第一绝缘膜，并且在栅极绝缘膜上在传输门的两侧形成第二绝缘膜。 在光电二极管的侧面和第一和第二绝缘膜上形成遮光层以与光电二极管电连接。 在包括光电二极管的遮光层上形成第三绝缘膜。