摘要:
An electric oven includes a cavity, a door rotatably installed at a front surface and including an air suction hole formed at one side of the outside thereof and an air discharge hole formed at one side of the inside thereof; and an air suction/discharge member mounted outside the cavity and allowing the indoor air to be sucked through the air suction hole and to be discharged to a lower side of the cavity.
摘要:
An electric oven includes a door and a compartment having an internal space that is selectively closed by the door. The door has a cooling air opening oil a surface facing the compartment, and the compartment has an intake opening configured to receive air exhausted through the cooling air opening. A shield element prevents foreign matter from entering into the door through the cooling air opening.
摘要:
An electric oven includes a door and a compartment having an internal space that is selectively closed by the door. The door has a cooling air opening oil a surface facing the compartment, and the compartment has an intake opening configured to receive air exhausted through the cooling air opening. A shield element prevents foreign matter from entering into the door through the cooling air opening.
摘要:
Provided is an electric oven. The electric oven includes a cavity having an electric component room, a light wave generating unit mounted on a top surface of the cavity, the light wave generating unit including a halogen heater emitting heat and light and a connector coupled to opposite ends of the halogen heater, and a heat discharge unit enclosing and cooling the connector.
摘要:
An electric oven is provided. The electric oven includes a chamber, a heater that heats air in the chamber and a flow guide defining a cooking space for food therein. The flow guide uniformly transfers heated air in the chamber to the food in the cooking space. The flow guide includes a body for covering the food and an exhaust for exhausting air that flows into the body.
摘要:
A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.
摘要:
Disclosed is a gun type continuous clip ejecting apparatus. The gun type continuous clip ejecting apparatus includes a body including bodies symmetrically combined by each other with a curved shape and a clip guide groove therein; a cover inserted into the upper front end of the body; a slider installed slidably along a guide groove formed within the body; a clip loading push rod in which protrusions are formed at an end thereof and hooked to the hook of the slider, a hook is protruded upwardly at the other end thereof and protrusions are protruded at sides thereof; a tension spring in which an end thereof is hooked the hook of the clip loading push rod and the other end thereof is pulled upwardly and fixed to the upper inside surface of the slider; a discharge push rod; a tension spring; and a trigger rotatably fixed to a bottom side of the body by a hinge shaft and including upper hooking protrusions contacted with a bottom end between both sides of the discharge push rod.
摘要:
Disclosed is a liquid crystal display device including a first substrate, a second substrate, and a liquid crystal layer interposed there between. The first substrate is provided with gate lines and data lines thereon. The gate lines and data lines cross with each other and are insulated from each other. Pixel electrodes are stacked on the gate lines and data lines. Each pixel electrode includes first and second sub-pixel electrodes spaced apart from each other and a connection electrode, which connects the first sub-pixel electrode to the second sub-pixel electrode. The second substrate is provided with a common electrode thereon. The common electrode includes a first domain divider formed on the center of the first sub-pixel electrode and a second domain divider formed on the center of the second sub-pixel electrode.
摘要:
A piezoelectric ceramic composition with superior mechanical quality factor Qm and electromechanical coupling factor Kp, and a high power output piezoelectric transformer made from the composition are disclosed. The piezoelectric ceramic composition according to the present invention is composed of Pb1−aSra[(Ni1/2W1/2)b(Mn1/3Nbz/3)c(Zr1−xTix)1−b−c]O3+kPbO, where a is 0-0.06, b is 0.01-0.05, c is 0.01-0.09, x is 0.47-0.53, and k is 0.1-0.7 wt %.
摘要:
Provided is a method of crystallizing an amorphous silicon thin film transistor and a method of fabricating a polycrystalline thin film transistor using the same, in which the polycrystalline thin film transistor indicating leakage current characteristics of a level that is applicable for active matrix organic light emitting diode displays (AMOLEDs) can be manufactured by using a silicide seed induced lateral crystallization (SILC) method. The amorphous silicon thin film transistor crystallizing method includes the steps of: forming an amorphous silicon layer on a substrate; forming an active region by patterning the amorphous silicon layer; forming a crystallization induced metal layer in both a source region and a drain region that are placed on both side ends of the active region; forming a number of dot-shaped metal silicide seeds on the surfaces of the source region and the drain region made of amorphous silicon by removing the crystallization induced metal layer; and crystallizing the active region formed of the amorphous silicon layer by heat-treating the substrate by using the metal silicide seeds as crystallization seeds.