Electric oven
    1.
    发明授权
    Electric oven 有权
    电烤箱

    公开(公告)号:US07806114B2

    公开(公告)日:2010-10-05

    申请号:US11416327

    申请日:2006-05-03

    IPC分类号: F24C15/04

    CPC分类号: F24C15/006 F24C15/04

    摘要: An electric oven includes a cavity, a door rotatably installed at a front surface and including an air suction hole formed at one side of the outside thereof and an air discharge hole formed at one side of the inside thereof; and an air suction/discharge member mounted outside the cavity and allowing the indoor air to be sucked through the air suction hole and to be discharged to a lower side of the cavity.

    摘要翻译: 电烤炉包括:空腔,可旋转地安装在前表面的门,并且包括形成在其外侧的空气吸入孔和形成在其内侧的一侧的排气孔; 以及安装在腔体外部并允许室内空气通过空气吸入孔吸入并被排出到空腔的下侧的吸气/排出构件。

    Electric oven
    2.
    发明授权
    Electric oven 有权
    电烤箱

    公开(公告)号:US07847219B2

    公开(公告)日:2010-12-07

    申请号:US11613506

    申请日:2006-12-20

    CPC分类号: F24C15/04 F24C15/006

    摘要: An electric oven includes a door and a compartment having an internal space that is selectively closed by the door. The door has a cooling air opening oil a surface facing the compartment, and the compartment has an intake opening configured to receive air exhausted through the cooling air opening. A shield element prevents foreign matter from entering into the door through the cooling air opening.

    摘要翻译: 电烤箱包括门和具有由门选择性地关闭的内部空间的隔间。 门具有面向隔室的表面的冷却空气开口油,并且隔室具有构造成接收通过冷却空气开口排出的空气的进气口。 屏蔽元件防止异物通过冷却空气开口进入门。

    ELECTRIC OVEN
    3.
    发明申请
    ELECTRIC OVEN 有权
    电烤箱

    公开(公告)号:US20070158340A1

    公开(公告)日:2007-07-12

    申请号:US11613506

    申请日:2006-12-20

    IPC分类号: H05B6/76 F24C15/04

    CPC分类号: F24C15/04 F24C15/006

    摘要: An electric oven includes a door and a compartment having an internal space that is selectively closed by the door. The door has a cooling air opening oil a surface facing the compartment, and the compartment has an intake opening configured to receive air exhausted through the cooling air opening. A shield element prevents foreign matter from entering into the door through the cooling air opening.

    摘要翻译: 电烤箱包括门和具有由门选择性地关闭的内部空间的隔间。 门具有面向隔室的表面的冷却空气开口油,并且隔室具有构造成接收通过冷却空气开口排出的空气的进气口。 屏蔽元件防止异物通过冷却空气开口进入门。

    Electric oven
    4.
    发明授权
    Electric oven 有权
    电烤箱

    公开(公告)号:US07348521B2

    公开(公告)日:2008-03-25

    申请号:US11412785

    申请日:2006-04-28

    CPC分类号: F24C15/006 F24C7/06

    摘要: Provided is an electric oven. The electric oven includes a cavity having an electric component room, a light wave generating unit mounted on a top surface of the cavity, the light wave generating unit including a halogen heater emitting heat and light and a connector coupled to opposite ends of the halogen heater, and a heat discharge unit enclosing and cooling the connector.

    摘要翻译: 提供电烤炉。 电烤箱包括具有电气部件的空腔,安装在空腔顶表面上的光波发生单元,光波发生单元包括发射热和光的卤素加热器和连接到卤素加热器的相对端的连接器 以及包围并冷却连接器的放热单元。

    Electric oven
    5.
    发明授权
    Electric oven 有权
    电烤箱

    公开(公告)号:US07491914B2

    公开(公告)日:2009-02-17

    申请号:US11616991

    申请日:2006-12-28

    IPC分类号: A21B1/26

    CPC分类号: F24C15/325

    摘要: An electric oven is provided. The electric oven includes a chamber, a heater that heats air in the chamber and a flow guide defining a cooking space for food therein. The flow guide uniformly transfers heated air in the chamber to the food in the cooking space. The flow guide includes a body for covering the food and an exhaust for exhausting air that flows into the body.

    摘要翻译: 提供电烤炉。 电烤箱包括一个室,一个加热室,加热室中的空气和一个流动导向器,用于限定食物烹饪空间。 流动引导件将腔室中的加热空气均匀地转移到烹饪空间中的食物。 流动引导件包括用于覆盖食物的主体和用于排出流入身体的空气的排气。

    Thin film transistor substrate and method of manufacturing the same and mask for manufacturing thin film transistor substrate
    6.
    发明授权
    Thin film transistor substrate and method of manufacturing the same and mask for manufacturing thin film transistor substrate 有权
    薄膜晶体管基板及其制造方法以及用于制造薄膜晶体管基板的掩模

    公开(公告)号:US07719008B2

    公开(公告)日:2010-05-18

    申请号:US11496320

    申请日:2006-07-31

    IPC分类号: H01L31/20

    摘要: A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.

    摘要翻译: 一种薄膜晶体管基板,其中薄膜晶体管(TFT)的源极和漏极之间的电子的移动面积最小化,电子的移动距离增加,并且由栅电极限定的电容器的尺寸与相应的 源极和漏极彼此相同,使得当TFT截止时产生的截止电流可以最小化; 制造薄膜晶体管基板的方法; 以及用于制造薄膜晶体管基板的掩模。 因此,可以将由于光的电子俘获现象引起的截止电流最小化。

    GUN TYPE CONTINUOUS CLIP EJECTING APPARATUS
    7.
    发明申请
    GUN TYPE CONTINUOUS CLIP EJECTING APPARATUS 有权
    枪类型连续剪裁装置

    公开(公告)号:US20090038133A1

    公开(公告)日:2009-02-12

    申请号:US12044265

    申请日:2008-03-07

    申请人: Yong Woo Lee

    发明人: Yong Woo Lee

    IPC分类号: B23P11/00

    摘要: Disclosed is a gun type continuous clip ejecting apparatus. The gun type continuous clip ejecting apparatus includes a body including bodies symmetrically combined by each other with a curved shape and a clip guide groove therein; a cover inserted into the upper front end of the body; a slider installed slidably along a guide groove formed within the body; a clip loading push rod in which protrusions are formed at an end thereof and hooked to the hook of the slider, a hook is protruded upwardly at the other end thereof and protrusions are protruded at sides thereof; a tension spring in which an end thereof is hooked the hook of the clip loading push rod and the other end thereof is pulled upwardly and fixed to the upper inside surface of the slider; a discharge push rod; a tension spring; and a trigger rotatably fixed to a bottom side of the body by a hinge shaft and including upper hooking protrusions contacted with a bottom end between both sides of the discharge push rod.

    摘要翻译: 公开了一种枪式连续夹子排出装置。 枪型连续夹子弹出装置包括:主体,其包括彼此对称地具有弯曲形状的对象体和夹子引导槽; 插入身体上前端的盖子; 滑块,其沿着形成在所述主体内的引导槽可滑动地安装; 一个夹子装载推杆,其中突出物在其一端形成并钩在滑块的钩上,钩在其另一端向上突出,突起在其侧面突出; 拉伸弹簧,其端部钩住夹子装载推杆的钩,其另一端被向上拉并固定在滑块的上内表面; 排放推杆; 拉伸弹簧 以及通过铰链轴可旋转地固定到本体的底侧的触发器,并且包括与排出推杆的两侧之间的底端接触的上钩状突起。

    LIQUID CRYSTAL DISPLAY DEVICE
    8.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE 有权
    液晶显示装置

    公开(公告)号:US20080043191A1

    公开(公告)日:2008-02-21

    申请号:US11839752

    申请日:2007-08-16

    IPC分类号: G02F1/1343

    CPC分类号: G02F1/133707

    摘要: Disclosed is a liquid crystal display device including a first substrate, a second substrate, and a liquid crystal layer interposed there between. The first substrate is provided with gate lines and data lines thereon. The gate lines and data lines cross with each other and are insulated from each other. Pixel electrodes are stacked on the gate lines and data lines. Each pixel electrode includes first and second sub-pixel electrodes spaced apart from each other and a connection electrode, which connects the first sub-pixel electrode to the second sub-pixel electrode. The second substrate is provided with a common electrode thereon. The common electrode includes a first domain divider formed on the center of the first sub-pixel electrode and a second domain divider formed on the center of the second sub-pixel electrode.

    摘要翻译: 公开了一种液晶显示装置,包括第一基板,第二基板和介于其间的液晶层。 第一基板上设置有栅线和数据线。 栅极线和数据线彼此交叉并且彼此绝缘。 像素电极堆叠在栅极线和数据线上。 每个像素电极包括彼此间隔开的第一和第二子像素电极和将第一子像素电极连接到第二子像素电极的连接电极。 第二基板上设置有公共电极。 公共电极包括形成在第一子像素电极的中心上的第一域分隔器和形成在第二子像素电极的中心的第二域分隔器。

    Piezoelectric ceramic composition, and high power output transformer made of the same composition
    9.
    发明授权
    Piezoelectric ceramic composition, and high power output transformer made of the same composition 失效
    压电陶瓷组合物和大功率输出变压器组成相同

    公开(公告)号:US06533957B2

    公开(公告)日:2003-03-18

    申请号:US10105166

    申请日:2002-03-26

    IPC分类号: C04B3800

    摘要: A piezoelectric ceramic composition with superior mechanical quality factor Qm and electromechanical coupling factor Kp, and a high power output piezoelectric transformer made from the composition are disclosed. The piezoelectric ceramic composition according to the present invention is composed of Pb1−aSra[(Ni1/2W1/2)b(Mn1/3Nbz/3)c(Zr1−xTix)1−b−c]O3+kPbO, where a is 0-0.06, b is 0.01-0.05, c is 0.01-0.09, x is 0.47-0.53, and k is 0.1-0.7 wt %.

    摘要翻译: 公开了一种具有优异的机械品质因子Qm和机电耦合系数Kp的压电陶瓷组合物,以及由该组合物制成的高功率输出压电变压器。 根据本发明的压电陶瓷组合物由Pb1-aSra [(Ni1 / 2W1 / 2)b(Mn1 / 3Nbz / 3)c(Zr1-xTix)1-bc] O3 + kPbO组成,其中a为0- 0.06,b为0.01-0.05,c为0.01-0.09,x为0.47-0.53,k为0.1-0.7重量%。

    Method for crystallizing amorphous silicon thin film and method for fabricating poly crystalline thin film transistor using the same
    10.
    发明授权
    Method for crystallizing amorphous silicon thin film and method for fabricating poly crystalline thin film transistor using the same 失效
    用于使非晶硅薄膜结晶的方法和使用其制造多晶薄膜晶体管的方法

    公开(公告)号:US08716112B2

    公开(公告)日:2014-05-06

    申请号:US13630148

    申请日:2012-10-16

    IPC分类号: H01L21/20

    摘要: Provided is a method of crystallizing an amorphous silicon thin film transistor and a method of fabricating a polycrystalline thin film transistor using the same, in which the polycrystalline thin film transistor indicating leakage current characteristics of a level that is applicable for active matrix organic light emitting diode displays (AMOLEDs) can be manufactured by using a silicide seed induced lateral crystallization (SILC) method. The amorphous silicon thin film transistor crystallizing method includes the steps of: forming an amorphous silicon layer on a substrate; forming an active region by patterning the amorphous silicon layer; forming a crystallization induced metal layer in both a source region and a drain region that are placed on both side ends of the active region; forming a number of dot-shaped metal silicide seeds on the surfaces of the source region and the drain region made of amorphous silicon by removing the crystallization induced metal layer; and crystallizing the active region formed of the amorphous silicon layer by heat-treating the substrate by using the metal silicide seeds as crystallization seeds.

    摘要翻译: 提供了一种使非晶硅薄膜晶体管结晶的方法和使用其制造多晶薄膜晶体管的方法,其中指示可用于有源矩阵有机发光二极管的电平的漏电流特性的多晶薄膜晶体管 可以通过使用硅化物种子诱导横向结晶(SILC)方法来制造显示器(AMOLED)。 非晶硅薄膜晶体管结晶方法包括以下步骤:在基板上形成非晶硅层; 通过图案化所述非晶硅层形成有源区; 在放置在有源区的两侧端的源区和漏区中形成结晶诱导金属层; 通过除去结晶诱导的金属层,在源极区和由非晶硅制成的漏极区域的表面上形成多个点状金属硅化物晶种; 并且通过使用金属硅化物种子作为结晶种子对基底进行热处理,使由非晶硅层形成的活性区域结晶。