公开(公告)号：US08716112B2

公开(公告)日：2014-05-06

申请号：US13630148

申请日：2012-10-16

申请人： Seung Ki Joo ,  Chang Woo Byun ,  Se Wan Son ,  Yong Woo Lee ,  Hyun Mo Kang ,  Seol Ah Park ,  Woo Chang Lim ,  Tao Li ,  Seung Jae Yun ,  Sang Joo Lee

发明人： Seung Ki Joo ,  Chang Woo Byun ,  Se Wan Son ,  Yong Woo Lee ,  Hyun Mo Kang ,  Seol Ah Park ,  Woo Chang Lim ,  Tao Li ,  Seung Jae Yun ,  Sang Joo Lee

IPC分类号： H01L21/20

CPC分类号： H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L29/66757

摘要： Provided is a method of crystallizing an amorphous silicon thin film transistor and a method of fabricating a polycrystalline thin film transistor using the same, in which the polycrystalline thin film transistor indicating leakage current characteristics of a level that is applicable for active matrix organic light emitting diode displays (AMOLEDs) can be manufactured by using a silicide seed induced lateral crystallization (SILC) method. The amorphous silicon thin film transistor crystallizing method includes the steps of: forming an amorphous silicon layer on a substrate; forming an active region by patterning the amorphous silicon layer; forming a crystallization induced metal layer in both a source region and a drain region that are placed on both side ends of the active region; forming a number of dot-shaped metal silicide seeds on the surfaces of the source region and the drain region made of amorphous silicon by removing the crystallization induced metal layer; and crystallizing the active region formed of the amorphous silicon layer by heat-treating the substrate by using the metal silicide seeds as crystallization seeds.

摘要翻译： 提供了一种使非晶硅薄膜晶体管结晶的方法和使用其制造多晶薄膜晶体管的方法，其中指示可用于有源矩阵有机发光二极管的电平的漏电流特性的多晶薄膜晶体管 可以通过使用硅化物种子诱导横向结晶（SILC）方法来制造显示器（AMOLED）。 非晶硅薄膜晶体管结晶方法包括以下步骤：在基板上形成非晶硅层; 通过图案化所述非晶硅层形成有源区; 在放置在有源区的两侧端的源区和漏区中形成结晶诱导金属层; 通过除去结晶诱导的金属层，在源极区和由非晶硅制成的漏极区域的表面上形成多个点状金属硅化物晶种; 并且通过使用金属硅化物种子作为结晶种子对基底进行热处理，使由非晶硅层形成的活性区域结晶。

公开(公告)号：US06635571B2

公开(公告)日：2003-10-21

申请号：US09841072

申请日：2001-04-25

申请人： Seung Ki Joo ,  Jang Sik Lee ,  Chang Wook Jeong

发明人： Seung Ki Joo ,  Jang Sik Lee ,  Chang Wook Jeong

IPC分类号： H01L2144

CPC分类号： H01L21/02178 ,  C23C16/403 ,  C23C16/45531 ,  C23C16/4554 ,  H01L21/02274 ,  H01L21/28562 ,  H01L21/31683 ,  H01L21/76888

摘要： Disclosed is a process for depositing an aluminum oxide thin film necessary for semiconductor devices. The process includes the steps of: subjecting a gaseous organoaluminum compound as an aluminum source in contact with a target substrate and depositing aluminum using plasma. The steps are sequentially repeated to form an aluminum thin film, and further includes the step of oxidizing the aluminum thin film using oxygen plasma. This deposition cycle is repeated to obtain an aluminum oxide thin film. The present invention uses an aluminum source containing less contaminant compared to the prior art, thus obtaining aluminum oxide of high quality. Furthermore, the temperature of the gas supply and the reactor can be lowered in relation to the prior art method to reduce costs in the fabrication of semiconductor devices.

摘要翻译： 公开了用于沉积半导体器件所需的氧化铝薄膜的工艺。 该方法包括以下步骤：使作为铝源的气态有机铝化合物与靶基质接触并使用等离子体沉积铝。 依次重复步骤以形成铝薄膜，并且还包括使用氧等离子体氧化铝薄膜的步骤。 重复该沉积循环以获得氧化铝薄膜。 与现有技术相比，本发明使用含有较少污染物的铝源，从而获得高质量的氧化铝。 此外，可以相对于现有技术的方法降低气体供应和反应器的温度，以降低制造半导体器件的成本。

公开(公告)号：US06340600B1

公开(公告)日：2002-01-22

申请号：US09837268

申请日：2001-04-19

申请人： Seung Ki Joo ,  Jang Sik Lee

发明人： Seung Ki Joo ,  Jang Sik Lee

IPC分类号： H01L2100

CPC分类号： H01L21/02197 ,  H01L21/02266 ,  H01L21/31691 ,  H01L28/55 ,  Y10S438/933

摘要： A method for fabricating a large single-grained ferroelectric thin film grown by selectively nucleated lateral crystallization (SNLC) using an artificial nucleation seed, a method for fabricating a ferroelectric capacitor using the same, and a method for fabricating a ferroelectric memory device using the same. The ferroelectric thin film fabrication method includes the steps of forming a first conductive layer on one side of a semiconductor substrate, by using a conductive material, forming an artificial nucleation seed in an island form adjacent a position where a ferroelectric thin film is to be formed in the upper portion of the first conductive layer, forming a ferroelectric thin film on the whole surface of the substrate including the nucleation seed, and thermally annealing the ferroelectric thin film to thereby grow the ferroelectric thin film positioned in the lateral side of the nucleation seed into a single-grained ferroelectric thin film.

摘要翻译： 一种通过使用人造成核晶种选择性晶核横向结晶（SNLC）生长的大型单晶铁电薄膜的制造方法，使用其制造铁电电容器的方法，以及使用其制造使用其的铁电存储器件的方法 。 铁电薄膜制造方法包括以下步骤：通过使用导电材料在半导体衬底的一侧上形成第一导电层，形成邻近形成铁电薄膜的位置的岛状的人造成核晶种 在第一导电层的上部，在包括成核种子的基板的整个表面上形成铁电薄膜，并且对铁电薄膜进行热退火，从而生长位于成核晶种侧面的铁电薄膜 成为单晶铁电薄膜。

公开(公告)号：US06596573B2

公开(公告)日：2003-07-22

申请号：US09826446

申请日：2001-04-04

申请人： Seok Woon Lee ,  Seung Ki Joo

发明人： Seok Woon Lee ,  Seung Ki Joo

IPC分类号： H01L2184

CPC分类号： H01L29/66757 ,  H01L27/12 ,  H01L29/41733 ,  H01L29/78645

摘要： A thin film transistor (TFT) including a polycrystalline active layer and a method for making the same are disclosed. An amorphous silicon layer is deposited on a substrate and is crystallized by using MJLC (metal induced lateral crystallization) to provide a poly-silicon active layer of the TFT. Specifically, the amorphous silicon layer is poly-crystallized during a thermal treatment of the active layer. The thermal treatment causes the MILC of the active layer propagating from portions of the source and the drain regions on which MILC source metal is formed through the contact holes of the TFT.

摘要翻译： 公开了一种包括多晶有源层的薄膜晶体管（TFT）及其制造方法。 非晶硅层沉积在衬底上并通过使用MJLC（金属诱导横向结晶）结晶，以提供TFT的多晶硅有源层。 具体地，在有源层的热处理期间，非晶硅层被多晶化。 热处理使得有源层的MILC通过TFT的接触孔从形成有MILC源极金属的源区和漏区的部分传播。

公开(公告)号：US06548331B2

公开(公告)日：2003-04-15

申请号：US09826439

申请日：2001-04-04

申请人： Seok Woon Lee ,  Seung Ki Joo

发明人： Seok Woon Lee ,  Seung Ki Joo

IPC分类号： H01L2100

CPC分类号： H01L29/66757 ,  H01L27/12 ,  H01L29/78609 ,  H01L29/78621

摘要： A method for fabricating a TFT including a crystalline silicon active layer is disclosed, in which the metal which induced the crystallization of the active layer is offset from a gate electrode utilizing a mask used to form a lightly doped drain (LDD) region or an offset junction region in the active layer. The TFT includes a silicon active layer crystallized by crystallization inducing metal and a gate electrode, and has an LDD region or an offset junction region formed in the vicinity of the channel region. The method for fabricating the TFT forms a metal offset region without using an additional photoresist forming process, and forms a LDD region by conducting a low density doping in the metal offset region. As a result, a transistor made according to the present invention has low leakage current in its off-state, and has stable electrical characteristics in its on-state.

公开(公告)号：US06537890B2

公开(公告)日：2003-03-25

申请号：US09900905

申请日：2001-07-10

申请人： Seung Ki Joo ,  Ki Bum Kim ,  Yeo Geon Yoon

发明人： Seung Ki Joo ,  Ki Bum Kim ,  Yeo Geon Yoon

IPC分类号： H01L2176

CPC分类号： H01L29/6675 ,  H01L29/78648

摘要： A poly-silicon (poly-Si) thin film transistor (TFT) having a back bias effect is provided in order to enhance characteristics of a leakage current, a sub-threshold slope, and an on-current. The poly-Si TFT includes a glass substrate, an island type buried electrode pad formed of an conductive material on one side of the glass substrate where the back bias voltage is applied, a buffer layer formed of an insulation material on the whole surface of the glass substrate, and a poly-Si TFT formed on the upper portion of the buffer layer. A method of fabricating the TFT is also provided.

公开(公告)号：US08389994B2

公开(公告)日：2013-03-05

申请号：US13182625

申请日：2011-07-14

申请人： Seung Ki Joo

发明人： Seung Ki Joo

IPC分类号： H01L29/10 ,  H01L31/036 ,  H01L21/00

CPC分类号： H01L29/42384 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78678

摘要： Provided is a polysilicon thin film transistor having a trench type bottom gate structure using copper and a method of making the same. The polysilicon thin film transistor includes: a transparent insulation substrate; a seed pattern that is formed in a pattern corresponding to that of a gate electrode on the transparent insulation substrate, and that is used to form the gate electrode; a trench type guide portion having a trench type contact window in which an upper portion of the seed pattern is exposed; the gate electrode that is formed by electrodepositing copper on a trench of the exposed seed pattern; a gate insulation film formed on the upper portions of the gate electrode and the trench type guide portion, respectively; and a polysilicon layer in which a channel region, a source region and a drain region are formed on the upper portion of the gate insulation film.

摘要翻译： 提供一种具有使用铜的沟槽型底栅结构的多晶硅薄膜晶体管及其制造方法。 多晶硅薄膜晶体管包括：透明绝缘基板; 种子图案，其形成为与透明绝缘基板上的栅电极相对应的图案，并且用于形成栅电极; 具有沟槽型接触窗口的沟槽型引导部分，其中种子图案的上部被暴露; 通过在暴露的种子图案的沟槽上电沉积铜形成的栅电极; 分别形成在栅极电极和沟槽型引导部分的上部的栅极绝缘膜; 以及在栅极绝缘膜的上部形成有沟道区域，源极区域和漏极区域的多晶硅层。

公开(公告)号：US08211739B2

公开(公告)日：2012-07-03

申请号：US12355098

申请日：2009-01-16

申请人： Seung Ki Joo ,  Hyeong Suk Yoo ,  Young Su Kim ,  Nam Kyu Song

发明人： Seung Ki Joo ,  Hyeong Suk Yoo ,  Young Su Kim ,  Nam Kyu Song

IPC分类号： H01L21/00

CPC分类号： H01L31/03682 ,  H01L21/02532 ,  H01L21/02672 ,  H01L31/035281 ,  Y02E10/546

摘要： Disclosed herein is a polycrystalline silicon solar cell, including: a back electrode formed on a transparent insulating substrate; an N-type polycrystalline silicon layer in which amorphous silicon is crystallized through MIC process, and in which electrons are accumulated; a light-absorbing layer which is formed by vertically crystallizing an intrinsic amorphous silicon layer using the polycrystalline silicon layer as a seed for crystallization through MIVC process, in which pairs of electrons and holes are generated in response to incident light, and which has a vertical column grain structure in which grains are arranged in the direction in which electrons and holes move; a P-type polycrystalline silicon layer which has the vertical column grain structure, and in which holes are accumulated; a transparent electrode layer; front electrodes; and an antireflection coating film, and is a method of fabricating the same.

摘要翻译： 这里公开了一种多晶硅太阳能电池，包括：形成在透明绝缘基板上的背面电极; 其中非晶硅通过MIC工艺结晶并且其中电子被积聚的N型多晶硅层; 通过使用多晶硅层作为用于通过MIVC工艺结晶的晶种使本征非晶硅层垂直结晶而形成的光吸收层，其中响应于入射光而产生电子和空穴对，并且具有垂直 晶粒结构，其中晶粒沿电子和空穴移动的方向排列; 具有垂直柱状结构的P型多晶硅层，其中积聚有空穴; 透明电极层; 前电极 和抗反射涂膜，并且是其制造方法。

公开(公告)号：US06727121B2

公开(公告)日：2004-04-27

申请号：US10053277

申请日：2002-01-18

申请人： Seung Ki Joo ,  Seok-Woon Lee

发明人： Seung Ki Joo ,  Seok-Woon Lee

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02686 ,  H01L21/2022 ,  H01L29/66772 ,  H01L29/78609 ,  H01L29/78654

摘要： The present invention relates to a method for crystallizing the active layer of a thin film transistor utilizing crystal filtering technique. According to the conventional metal induced lateral crystallization (MILC) method, amorphous silicon layer can be crystallized into poly-crystal silicon layer. According the crystal filtering technique of the present invention, amorphous silicon layer can be single-crystallized by filtering a single crystal component from the poly-crystal region being crystallized by MILC. The TFT fabricated including an active layer crystallized according to the present method has significantly improved electrical characteristics such as electron mobility and leakage current as compared to the TFT including a poly-crystal silicon active layer made by conventional methods. The invention also provides various TFT fabrication methods applying the crystal filtering technique.

摘要翻译： 本发明涉及利用晶体滤波技术使薄膜晶体管的有源层结晶的方法。 根据传统的金属诱导横向结晶（MILC）方法，非晶硅层可以结晶成多晶硅层。 根据本发明的晶体滤波技术，非晶硅层可以通过由MILC结晶化的多晶区域过滤单晶成分而进行单晶化。 与包括通过常规方法制成的多晶硅有源层的TFT相比，根据本方法结晶的包括活性层的TFT具有显着改善的电特性，例如电子迁移率和漏电流。 本发明还提供了应用晶体滤波技术的各种TFT制造方法。

公开(公告)号：US06692996B2

公开(公告)日：2004-02-17

申请号：US09826438

申请日：2001-04-04

申请人： Seok Woon Lee ,  Seung Ki Joo

发明人： Seok Woon Lee ,  Seung Ki Joo

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  H01L21/02595 ,  H01L21/02686 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78675

摘要： The present invention relates to a method for crystallizing the active layer of a thin film transistor utilizing crystal filtering technique. According to the conventional metal induced lateral crystallization (MILC) method, amorphous silicon layer can be crystallized into poly-crystal silicon layer. According the crystal filtering technique of the present invention, amorphous silicon layer can be single-crystallized by filtering a single crystal component from the poly-crystal region being crystallized by MILC. The TFT fabricated including an active layer crystallized according to the present method has significantly improved electrical characteristics such as electron mobility and leakage current as compared to the TFT including a poly-crystal silicon active layer made by conventional methods. The invention also provides various TFT fabrication methods applying the crystal filtering technique.

摘要翻译： 本发明涉及利用晶体滤波技术使薄膜晶体管的有源层结晶的方法。 根据传统的金属诱导横向结晶（MILC）方法，非晶硅层可以结晶成多晶硅层。 根据本发明的晶体滤波技术，非晶硅层可以通过从MILC结晶的多晶区域中过滤单晶成分而进行单晶化。 与包括通过常规方法制成的多晶硅有源层的TFT相比，根据本方法结晶的包括活性层的TFT具有显着改善的电特性，例如电子迁移率和漏电流。 本发明还提供了应用晶体滤波技术的各种TFT制造方法。