公开(公告)号：US06732750B2

公开(公告)日：2004-05-11

申请号：US09832330

申请日：2001-04-11

申请人： Yong-joon Cho ,  Seung-kun Lee ,  Young-hwan Yun ,  Gyu-hwan Kwag

发明人： Yong-joon Cho ,  Seung-kun Lee ,  Young-hwan Yun ,  Gyu-hwan Kwag

IPC分类号： B08B300

CPC分类号： H01L21/67034 ,  B08B3/02 ,  Y10S134/902

摘要： A semiconductor wafer cleaning apparatus and method uses only one inner bath for chemical solution and de-ionized water cleaning, and includes a marangoni dryer for cleaning and drying semiconductor wafers. The apparatus includes a loading unit loaded with a cassette holding wafers; a moving mechanism for extracting the wafers from the cassette and moving the wafers into a loader; an inner bath for cleaning the wafers with a chemical solution or de-ionized water; a marangoni dryer including a hood, for moving the wafers from the loader into the bath, to be sealed to the bath; and a knife for supporting the wafers loaded into the bath at a lower portion thereof and moving the wafers up and down. Since the marangoni dryer is adhered to the bath during drying, the wafers are not affected by laminar flow or exhaustion and water marks do not occur thereon.

摘要翻译： 半导体晶片清洁装置和方法仅使用一个用于化学溶液和去离子水清洗的内浴，并且包括用于清洁和干燥半导体晶片的马龙戈尼干燥器。 该装置包括装载有保持晶片的盒的装载单元; 用于从所述盒中提取所述晶片并将所述晶片移动到装载器中的移动机构; 用于用化学溶液或去离子水清洗晶片的内浴; 包括用于将晶片从装载器移动到浴缸中的马拉热尼亚干燥器，以将其密封到浴中; 以及用于支撑在其下部装入浴中的晶片并且上下移动晶片的刀。 由于在干燥过程中将马龙戈尼干燥机附着在浴槽上，所以晶片不受层流或排气的影响，并且不会在其上发生水痕。

公开(公告)号：US06235147B1

公开(公告)日：2001-05-22

申请号：US09406887

申请日：1999-09-28

申请人： Seung-kun Lee ,  Jae-hyung Jung ,  Young-hwan Yun ,  Gyu-hwan Kwag

发明人： Seung-kun Lee ,  Jae-hyung Jung ,  Young-hwan Yun ,  Gyu-hwan Kwag

IPC分类号： B08B302

CPC分类号： H01L21/67086 ,  H01L21/6708

摘要： There is provided a wet-etching facility for manufacturing semiconductor devices, wherein the etching process is performed for a wafer with its used surface facing downward so that the by-products from the etching process are completely removed from the etching groove of the wafer by gravity, and the impurities on the back side of the wafer are sank down, and are not touched to the used surface of the other wafer thereby producing good quality of wafers. The wet-etching facility for manufacturing semiconductor devices comprises a bath containing an amount of chemical; a chemical supply part for supplying an amount of chemical to the bath; a chemical discharge part for discharging the chemical inside the bath to the outside; a wafer guide holding and fixing a wafer with its used surface facing downward, and placing the wafer into a chemical; a transfer robot for loading and unloading the wafer into the wafer guide; and a chemical spray part for spraying the chemical at a high pressure such that the chemical flows along a surface of the wafer.

摘要翻译： 提供了用于制造半导体器件的湿式蚀刻设备，其中对于其使用的表面朝下的晶片执行蚀刻处理，使得来自蚀刻工艺的副产物通过重力从晶片的蚀刻蚀刻槽完全去除 ，并且晶片背面的杂质沉没，并且不会接触另一晶片的使用表面，从而产生良好的晶片质量。用于制造半导体器件的湿式蚀刻设备包括含有一定量的 化学品 用于向浴提供一定量的化学品的化学品供应部件; 用于将浴内的化学物质排放到外部的化学物排放部分; 将晶片的使用面向下保持并固定的晶片导板，将晶片放入化学品中; 用于将晶片装载和卸载到晶片引导件中的传送机器人; 以及用于在高压下喷射化学品使化学品沿着晶片表面流动的化学喷涂部件。

公开(公告)号：US06460269B2

公开(公告)日：2002-10-08

申请号：US09800144

申请日：2001-03-06

申请人： Yong-joon Cho ,  Gyu-hwan Kwag

发明人： Yong-joon Cho ,  Gyu-hwan Kwag

IPC分类号： F26B300

CPC分类号： H01L21/67034

摘要： A wafer dryer for drying a wafer includes a chamber and a support adapted to support the wafer in the chamber. A spray nozzle is disposed in the chamber. A source gas supply tank is in fluid communication with the spray nozzle. At least one heater is operable to heat the chamber and the source gas supply tank. A pumping line is in fluid communication with the chamber. Drive means are operable to rotate the chamber and the spray nozzle. A method for drying a wafer using a wafer dryer including a chamber and a revolving spray nozzle includes the steps of: loading the wafer in the chamber; reducing the pressure in the chamber in which the wafer is loaded to a near vacuum state; creating a temperature controlled atmosphere in the pressure-reduced chamber to quicken drying of the wafer; and spraying the source gas on the wafer while rotating the chamber and the revolving spray nozzle in opposite directions in the pressure-reduced temperature controlled atmosphere.

摘要翻译： 用于干燥晶片的晶片干燥器包括腔室和适于将晶片支撑在腔室中的支撑件。 喷嘴设置在腔室中。 源气体供应罐与喷嘴流体连通。 至少一个加热器可操作以加热室和源气体供应罐。 泵送管线与腔室流体连通。 驱动装置可操作以旋转腔室和喷嘴。 使用包括腔室和旋转喷嘴的晶片干燥器干燥晶片的方法包括以下步骤：将晶片装载在腔室中; 将晶片加载到近似真空状态的室内的压力降低; 在减压室中产生温度控制的气氛以加速晶片的干燥; 并且在压力降低的温度受控气氛中沿着相反方向旋转室和旋转喷嘴，将源气体喷射在晶片上。

公开(公告)号：US06200414B1

公开(公告)日：2001-03-13

申请号：US09294362

申请日：1999-04-20

申请人： Kyung-seuk Hwang ,  Gyu-hwan Kwag ,  Young-hwan Yun

发明人： Kyung-seuk Hwang ,  Gyu-hwan Kwag ,  Young-hwan Yun

IPC分类号： C23F102

CPC分类号： B24B37/015 ,  B24B57/02 ,  H01L21/6708

摘要： A circulation system for supplying one or more chemicals, or mixtures thereof, includes a chemical tank containing the chemical. A chemical supply line is connected at one end to the chemical tank, through which the chemical from the chemical tank is supplied to one of a processing section, for performing a specific semiconductor device fabrication process, and a bypass section, for collecting the chemical while the processing section is idle. A supply nozzle, connected to another end of the chemical supply line, is movable between the processing section and the bypass section, such that the supply nozzle is selectively oriented above one of the processing section and the bypass section. A primary chemical re-circulation line connects the processing section and the chemical tank, and a chemical bypass line connects the bypass section and a portion of the primary chemical re-circulation line.

摘要翻译： 用于供应一种或多种化学品或其混合物的循环系统包括含有该化学品的化学罐。 化学品供应管线一端连接到化学罐，化学罐的化学物质通过该药液供应给处理部分之一，用于执行特定的半导体器件制造工艺，旁路部分用于收集化学品，同时 处理部分空闲。 连接到化学供应管线的另一端的供应喷嘴可在处理部分和旁路部分之间移动，使得供应喷嘴选择性地定向在处理部分和旁路部分之一上。 主要化学品循环管线连接处理部分和化学罐，化学旁路管线连接旁路部分和主要化学品再循环管线的一部分。

公开(公告)号：US5900163A

公开(公告)日：1999-05-04

申请号：US784958

申请日：1997-01-16

申请人： Whi-kun Yi ,  Dai-sik Moon ,  Sung-kyeong Kim ,  Kyung-hoon Kim ,  Gyu-hwan Kwag

发明人： Whi-kun Yi ,  Dai-sik Moon ,  Sung-kyeong Kim ,  Kyung-hoon Kim ,  Gyu-hwan Kwag

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  B44C1/22

CPC分类号： H01L21/32137

摘要： A method for etching a layer of a microelectronic structure includes the steps of masking the layer to be etched so that predetermined portions of the layer are exposed, and providing an etching gas. An additional gas is also provided wherein the additional gas generates a compound having a carbene structure when exposed to a plasma discharge. A plasma of the etching gas and the additional gas is generated to thereby etch the exposed portions of the layer and to form the compound having a carbene structure. A polymer can thus be formed from the compound having the carbene structure on the sidewalls of the etched portions of the layer. Accordingly, the profile of the etched layer can be improved.

摘要翻译： 用于蚀刻微电子结构层的方法包括以下步骤：掩蔽待蚀刻的层，使得层的预定部分暴露，并提供蚀刻气体。 还提供另外的气体，其中附加气体当暴露于等离子体放电时产生具有卡宾结构的化合物。 产生蚀刻气体和附加气体的等离子体，从而蚀刻该层的暴露部分并形成具有卡宾结构的化合物。 因此，可以在层的蚀刻部分的侧壁上由具有卡宾结构的化合物形成聚合物。 因此，可以提高蚀刻层的轮廓。

公开(公告)号：US06503365B1

公开(公告)日：2003-01-07

申请号：US09237229

申请日：1999-01-26

申请人： Ki-sang Kim ,  Gyu-chan Jeoung ,  Gyu-hwan Kwag

发明人： Ki-sang Kim ,  Gyu-chan Jeoung ,  Gyu-hwan Kwag

IPC分类号： C23F100

CPC分类号： H01L21/67161 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67184 ,  Y10S414/135 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/141

摘要： A multi-chamber system of an etching facility for manufacturing semiconductor devices occupies a minimum amount of floor space in a cleanroom by installing a plurality of processing chambers in multi-layers and in parallel along a transfer path situated between the processing chambers. The multi-layers number 2 to 5, and the transfer path can be rectangular in shape and need only be slightly wider than the diameter of a wafer. The total width of the multi-chamber system is the sum of the width of one processing chamber plus the width of the transfer path.

摘要翻译： 用于制造半导体器件的蚀刻设备的多室系统通过沿着位于处理室之间的传输路径以多层并联的方式安装多个处理室而在洁净室中占据最小量的地板空间。 多层数2至5，并且传送路径可以是矩形形状，并且仅需要比晶片的直径稍宽。 多室系统的总宽度是一个处理室的宽度加上传送路径的宽度之和。

公开(公告)号：US06436809B1

公开(公告)日：2002-08-20

申请号：US09645615

申请日：2000-08-25

申请人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

发明人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

IPC分类号： H01L214763

CPC分类号： H01L21/7684 ,  C09K13/04 ,  H01L21/3212 ,  Y10S438/981

摘要： A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H2O2, O2, IO4−, BrO3, ClO3, S2O8−, KlO3, H5IO6, KOH, and HNO3, at least one enhancer selected from the group comprising HF, NH4OH, H3PO4, H2SO4, and HCl, and a buffer solution formed by mixing them at certain rates.

摘要翻译： 提供一种制造半导体器件的方法，用于形成钨插塞或多晶硅插塞，并使中间绝缘层的阶梯高度最小化。 还提供了用于该工艺的蚀刻组合物，与通过该工艺制造的半导体器件一样。 制造半导体器件的方法包括以下步骤：在绝缘层上形成具有一定厚度的钨膜，并且在构成特定半导体结构的绝缘层中形成的埋入接触孔，并使用一定的蚀刻组合物旋转蚀刻钨膜 钨膜仅存在于不存在于绝缘膜上的接触孔内。 蚀刻组合物包括至少一种选自H 2 O 2，O 2，O 4 - ，BrO 3，ClO 3，S 2-8 - ，KIO 3，H 5 O 6，KOH和HNO 3的氧化剂，至少一种选自HF，NH 4 OH，H 3 PO 4 ，H 2 SO 4和HCl，以及通过以一定速率混合形成的缓冲溶液。

公开(公告)号：US20060026857A1

公开(公告)日：2006-02-09

申请号：US11246591

申请日：2005-10-11

申请人： Ki-sang Kim ,  Gyu-chan Jeoung ,  Gyu-hwan Kwag

发明人： Ki-sang Kim ,  Gyu-chan Jeoung ,  Gyu-hwan Kwag

IPC分类号： F26B13/30 ,  F26B5/04

CPC分类号： D21F5/046 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67184

摘要： A multi-chamber system of an etching facility for manufacturing semiconductor devices occupies a minimum amount of floor space in a cleanroom by installing a plurality of processing chambers in multi-layers and in parallel along a transfer path situated between the processing chambers. The multi-layers number 2 to 5, and the transfer path can be rectangular in shape and need only be slightly wider than the diameter of a wafer. The total width of the multi-chamber system is the sum of the width of one processing chamber plus the width of the transfer path.

摘要翻译： 用于制造半导体器件的蚀刻设备的多室系统通过沿着位于处理室之间的传输路径以多层并联的方式安装多个处理室而在洁净室中占据最小量的地板空间。 多层数2至5，并且传输路径可以是矩形形状，并且仅需要比晶片的直径稍宽。 多室系统的总宽度是一个处理室的宽度加上传送路径的宽度之和。

公开(公告)号：US06232228B1

公开(公告)日：2001-05-15

申请号：US09325389

申请日：1999-06-04

申请人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

发明人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

IPC分类号： H01L2144

CPC分类号： C09K13/04 ,  H01L21/3212 ,  H01L21/7684

摘要： A method of manufacturing semiconductor devices is provided, including the formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. An etching composition is also provided for such a manufacturing method. The method of manufacturing semiconductor devices includes the steps of forming an insulating layer over a semiconductor substrate, forming contact holes in the insulating layer, forming a conductive layer over the insulating layer to burying the contact holes, rotating the semiconductor substrate, and etching the conductive layer by supplying an etching composition on the rotating semiconductor substrate, and spin-etching the tungsten layer using an etching composition such that the conductive layer remains only inside the contact holes and does not remain over the insulating layer. The etching composition includes at least one oxidant selected from H2O2, O2, IO4−, BrO3, ClO3, S2O8−, KIO3, H5IO6, KOH and HNO3, at least enhancer selected from HF, NH4OH, H3PO4, H2SO4, NH4F and HCl, and a buffer solution, mixed together in certain amounts.

摘要翻译： 提供一种制造半导体器件的方法，包括形成导电插塞并使层间绝缘层的阶梯高度最小化。 还提供了用于这种制造方法的蚀刻组合物。 制造半导体器件的方法包括以下步骤：在半导体衬底上形成绝缘层，在绝缘层中形成接触孔，在绝缘层上形成导电层以埋入接触孔，旋转半导体衬底，并蚀刻导电 通过在旋转半导体衬底上提供蚀刻组合物，并且使用蚀刻组合物旋转蚀刻钨层，使得导电层仅保留在接触孔内部，并且不保留在绝缘层上。 蚀刻组合物包括至少一种选自H 2 O 2，O 2，O 4 - ，BrO 3，ClO 3，S 2-8 - ，KIO 3，H 5 O 6，KOH和HNO 3的氧化剂，至少选自HF，NH 4 OH，H 3 PO 4，H 2 SO 4，NH 4 F和HCl的增强剂， 缓冲溶液，以一定量混合在一起。

公开(公告)号：US06197150B1

公开(公告)日：2001-03-06

申请号：US09320139

申请日：1999-05-26

申请人： Gyu-hwan Kwag ,  Kyung-seuk Hwang

发明人： Gyu-hwan Kwag ,  Kyung-seuk Hwang

IPC分类号： H01L2100

CPC分类号： H01L21/67017 ,  H01L21/67023

摘要： An apparatus is provided for wafer treatment during the manufacture of semiconductor devices. The apparatus for wafer treatment includes a shaft, a chuck supported by the shaft for holding a wafer to be treated, a solution nozzle for supplying a treatment solution for wafer treatment onto the wafer, a gas supplier for supplying a gas to the back side of the wafer, and a heater for heating the gas supplied to the back side of the wafer. The use of this apparatus improves the uniformity of a treatment process such as an etching process or a cleaning process by minimizing the temperature changes of the treatment solution supplied onto the wafer mounted on the spin chuck of the apparatus during the wafer treatment process.

摘要翻译： 在半导体器件的制造期间提供用于晶片处理的装置。 用于晶片处理的装置包括轴，用于保持待处理的晶片的轴支撑的卡盘，用于将晶片处理的处理溶液供应到晶片上的溶液喷嘴，用于向晶片的背面供应气体的气体供应器 晶片和用于加热供应到晶片背面的气体的加热器。 该设备的使用通过最小化在晶片处理过程中将安装在装置的旋转卡盘上的晶片上的处理溶液的温度变化降至最低，从而提高了诸如蚀刻工艺或清洗工艺的处理过程的均匀性。