公开(公告)号：US20110250758A1

公开(公告)日：2011-10-13

申请号：US13044891

申请日：2011-03-10

申请人： Hyun-Su JUN ,  Ki-Sang Kim ,  Seung-Heong Lee ,  Jong-Bum Kim ,  Min-Woung Choi ,  In-Joong Kim

发明人： Hyun-Su JUN ,  Ki-Sang Kim ,  Seung-Heong Lee ,  Jong-Bum Kim ,  Min-Woung Choi ,  In-Joong Kim

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32091

摘要： Plasma processing methods of a semiconductor manufacturing apparatus which can minimize the amount of impurities adhered to the surface of a wafer, when a desired process using plasma is performed. According to the plasma processing methods of the semiconductor manufacturing apparatus, after the desired process is completed, the plasma generated over the wafer is diffused, and then the wafer is de-chucked.

摘要翻译： 当进行使用等离子体的所需工艺时，可以使附着到晶片表面的杂质的量最小化的半导体制造装置的等离子体处理方法。 根据半导体制造装置的等离子体处理方法，在所需工艺完成之后，在晶片上产生的等离子体扩散，然后晶片脱卡。

公开(公告)号：US07988812B2

公开(公告)日：2011-08-02

申请号：US11711124

申请日：2007-02-27

申请人： Ki-Sang Kim ,  Kyue-Sang Choi ,  Byong-Kyu Seo ,  Soon-Chon Park

发明人： Ki-Sang Kim ,  Kyue-Sang Choi ,  Byong-Kyu Seo ,  Soon-Chon Park

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01L21/67161 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67766 ,  Y10S414/135

摘要： A substrate treatment apparatus is provided. The substrate treatment apparatus includes a process room, a load port in which a container receiving wafers is disposed, and a wafer transfer module disposed between the load port and the process room to transfer the wafers between the load port and the process room. The wafer transfer module includes a first barrier, a second barrier extending from a first end of the first barrier or from a portion near the first end of the first barrier at a predetermined inclined angle with respect to the first barrier, and a third barrier extending from a second end of the first barrier or from a portion near the second end of the first barrier at a predetermined inclined angle. The load portion is provided along the first barrier. The process room includes a plurality of chambers arranged along the second and third barriers.

摘要翻译： 提供了一种基板处理装置。 基板处理装置包括处理室，其中设置有容纳晶片的容器的负载端口和设置在负载端口和处理室之间的晶片传送模块，以在载体端口和处理室之间传送晶片。 晶片传送模块包括第一屏障，从第一屏障的第一端或第一屏障的第一端附近的部分以相对于第一屏障预定的倾斜角延伸的第二屏障，以及第三屏障延伸 从第一屏障的第二端或从第一屏障的第二端附近的部分以预定的倾斜角度。 负载部分沿着第一屏障设置。 处理室包括沿着第二和第三屏障布置的多个室。

公开(公告)号：US20090203211A1

公开(公告)日：2009-08-13

申请号：US12425426

申请日：2009-04-17

申请人： Ki-sang KIM ,  Gyu-chan JEOUNG ,  Gyu-hwan KWAG

发明人： Ki-sang KIM ,  Gyu-chan JEOUNG ,  Gyu-hwan KWAG

IPC分类号： H01L21/306

CPC分类号： H01L21/67161 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67184 ,  Y10S414/135 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/141

摘要： A multi-chamber system of an etching facility for manufacturing semiconductor devices occupies a minimum amount of floor space in a clean room by installing a plurality of processing chambers in multi-layers and in parallel along a transfer path situated between the processing chambers. The multi-layers number 2 to 5, and the transfer path can be rectangular in shape and need only be slightly wider than the diameter of a wafer. The total width of the multi-chamber system is the sum of the width of one processing chamber plus the width of the transfer path.

摘要翻译： 用于制造半导体器件的蚀刻设备的多室系统通过沿着位于处理室之间的传送路径以多层并联的方式安装多个处理室而在洁净室中占据最小的占地面积。 多层数2至5，并且传输路径可以是矩形形状，并且仅需要比晶片的直径稍宽。 多室系统的总宽度是一个处理室的宽度加上传送路径的宽度之和。

公开(公告)号：US07070379B2

公开(公告)日：2006-07-04

申请号：US10154609

申请日：2002-05-22

申请人： Ki-Sang Kim

发明人： Ki-Sang Kim

IPC分类号： B65G49/07

CPC分类号： H01L21/67778 ,  H01L21/67766 ,  Y10S414/137 ,  Y10S414/139

摘要： A semiconductor fabrication apparatus, located in an apparatus installation area, includes a front-opening unified pod (FOUP) index, a plate, a first transfer device, a second transfer device, and an engineering FOUP index and multiple processing chambers. The FOUP index can be located in a line, vertically, horizontally, on top, and on bottom. The engineering FOUP index is used for manually locating the FOUP thereon in case of processing irregular single wafers that are not stored in a lot. As the FOUP index is located in the semiconductor fabrication apparatus installed in the apparatus installation area, dead space between the apparatus and air eddies generated above and below the FOUP index can be eliminated to increase the efficiency of working area and improve the environment in fabrication.

公开(公告)号：US20050095111A1

公开(公告)日：2005-05-05

申请号：US10936478

申请日：2004-09-09

申请人： Ki-Sang Kim ,  Seung-Ki Chae ,  In-Ho Lee

发明人： Ki-Sang Kim ,  Seung-Ki Chae ,  In-Ho Lee

IPC分类号： H01L21/68 ,  B25J9/04 ,  H01L21/677 ,  B66C23/00

CPC分类号： H01L21/67745 ,  B25J9/042 ,  H01L21/67742

摘要： A wafer transfer apparatus can transfer wafers to and from at least one process chamber quickly and in a small amount of space. The wafer transfer includes an arm unit, and a multi-blade connected to said arm unit so as to be rotatable relative to the arm unit. The multi-blade has at least two wafer supports configured to respectively support wafers as all lying in a horizontal plane. The arm unit includes a first arm mounted for rotation in a horizontal plane, and a second arm carried by the first arm and rotatable relative to the first arm in a horizontal plane. The multi-blade is carried by the second arm.

摘要翻译： 晶片传送装置可以快速和少量的空间将晶片传送到至少一个处理室和从至少一个处理室传送晶片。 晶片传送包括臂单元和连接到所述臂单元以相对于臂单元可旋转的多叶片。 多刀片具有至少两个晶片支撑件，其构造成分别支撑晶片，全部位于水平面。 臂单元包括安装成用于在水平面中旋转的第一臂和由第一臂承载并且能够相对于第一臂在水平面中旋转的第二臂。 多叶片由第二臂承载。

公开(公告)号：US06503365B1

公开(公告)日：2003-01-07

申请号：US09237229

申请日：1999-01-26

申请人： Ki-sang Kim ,  Gyu-chan Jeoung ,  Gyu-hwan Kwag

发明人： Ki-sang Kim ,  Gyu-chan Jeoung ,  Gyu-hwan Kwag

IPC分类号： C23F100

CPC分类号： H01L21/67161 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67184 ,  Y10S414/135 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/141

摘要： A multi-chamber system of an etching facility for manufacturing semiconductor devices occupies a minimum amount of floor space in a cleanroom by installing a plurality of processing chambers in multi-layers and in parallel along a transfer path situated between the processing chambers. The multi-layers number 2 to 5, and the transfer path can be rectangular in shape and need only be slightly wider than the diameter of a wafer. The total width of the multi-chamber system is the sum of the width of one processing chamber plus the width of the transfer path.

摘要翻译： 用于制造半导体器件的蚀刻设备的多室系统通过沿着位于处理室之间的传输路径以多层并联的方式安装多个处理室而在洁净室中占据最小量的地板空间。 多层数2至5，并且传送路径可以是矩形形状，并且仅需要比晶片的直径稍宽。 多室系统的总宽度是一个处理室的宽度加上传送路径的宽度之和。

公开(公告)号：USD700233S1

公开(公告)日：2014-02-25

申请号：US29429499

申请日：2012-08-13

申请人： Ki Sang Kim

设计人： Ki Sang Kim

公开(公告)号：US06991419B2

公开(公告)日：2006-01-31

申请号：US10120477

申请日：2002-04-10

申请人： Ki-Sang Kim

发明人： Ki-Sang Kim

IPC分类号： B66C23/00

CPC分类号： H01L21/68707 ,  B25J18/02 ,  Y10S414/135 ,  Y10S414/141

摘要： The present invention relates to a transfer apparatus for a wafer, in which the wafer may be transferred in a narrow space by reducing a transfer device footprint. The transfer device has a base, a lower arm, an upper arm and a hand. The lower arm is configured to be vertically adjustable and rotatable on a vertical axis. The upper arm is pivotably coupled to the lower arm, and the hand is horizontally coupled to the upper arm.

公开(公告)号：US20050217053A1

公开(公告)日：2005-10-06

申请号：US11015794

申请日：2004-12-20

申请人： Ki-Sang Kim ,  Seung-Ki Chae

发明人： Ki-Sang Kim ,  Seung-Ki Chae

IPC分类号： B25J9/06 ,  B25J9/00 ,  B25J9/04 ,  B25J9/10 ,  B25J17/02 ,  B60S1/02 ,  B65G49/07 ,  H01L21/677 ,  H01L21/68

CPC分类号： H01L21/67742 ,  B25J9/0084 ,  B25J9/042 ,  B25J9/104 ,  H01L21/67745

摘要： A robot arm mechanism includes a housing, upper and lower arms rotatably mounted on the housing, a respective substrate-supporting blade connected to each upper arm, and first, second, third and fourth driving units for rotating the housing, the upper and lower arms and the blade independently of one another. Thus, positions of the blades are readily controlled so that the blades and/or the substrates supported by the blades can be prevented from colliding against the inner wall of the chambers into and from which the substrates are transferred by the robot arm mechanism.

摘要翻译： 一种机器人臂机构包括壳体，可旋转地安装在壳体上的上臂和下臂，连接到每个上臂的相应的基板支撑叶片，以及用于旋转壳体的第一，第二，第三和第四驱动单元，上臂和下臂 和叶片彼此独立。 因此，容易地控制叶片的位置，使得能够防止由叶片支撑的叶片和/或基板与机器人手臂机构进入和移出基板的室的内壁碰撞。

公开(公告)号：US20090291558A1

公开(公告)日：2009-11-26

申请号：US12512106

申请日：2009-07-30

申请人： Ki-sang KIM ,  Gyu-chan JEOUNG ,  Gyu-hwan KWAG

发明人： Ki-sang KIM ,  Gyu-chan JEOUNG ,  Gyu-hwan KWAG

IPC分类号： H01L21/465

CPC分类号： H01L21/67161 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67184 ,  Y10S414/135 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/141

摘要： A multi-chamber system of an etching facility for manufacturing semiconductor devices occupies a minimum amount of floor space in a clean room by installing a plurality of processing chambers in multi-layers and in parallel along a transfer path situated between the processing chambers. The multi-layers number 2 to 5, and the transfer path can be rectangular in shape and need only be slightly wider than the diameter of a wafer. The total width of the multi-chamber system is the sum of the width of one processing chamber plus the width of the transfer path.