摘要:
A gain flattening and tap device. A gain flattening filter for use in fiber-optic communications includes a substrate. A GFF film is formed on a first surface of the substrate. An HR film is formed on a second surface of the substrate. The HR film is arranged to receive light from the GFF film and to reflect at least some of the light back through the GFF film. By passing the light through the GFF film multiple times, the effectiveness of the GFF film is multiplied. Further, by constructing the HR film to allow portions of the light to pass through, a tap may be implemented with the GFF.
摘要:
An optical waveguide for use in amplifying light signals with an integrated gain equalization filter. The optical waveguide includes a gain section for amplifying light signals. The optical waveguide further includes an equalization filter to improve the uniformity of optical gain over a wavelength range for which the gain section is intended to provide amplification.
摘要:
An optical waveguide for use in amplifying light signals with an integrated gain equalization filter. The optical waveguide includes a gain section for amplifying light signals. The optical waveguide further includes an equalization filter to improve the uniformity of optical gain over a wavelength range for which the gain section is intended to provide amplification.
摘要:
An optical amplifier utilizes two or more doped fiber segments or portions to achieve a lower noise figure and a higher saturation power than would be possible using any one of the doped fiber segments. Each doped fiber portion may be considered to be a doped fiber optical amplifier, and has a different doping level than each of the other doped fiber portions. Each such doped fiber portion has distinct amplitude gain and noise characteristics relative to each of the other doped fiber potions. The two or more doped fiber portions are coupled to each other in series and most often in a predefined order based on their relative amplitude gain, noise and saturation power characteristics.
摘要:
A dual fiber optic amplifier uses a single pump source for two or more optical power amplifiers. The dual fiber optic amplifier includes a pump source that emits light, a pump splitter, a first optical power amplifier and a second optical power amplifier. The pump splitter splits the light emitted by the pump source into two or more portions. The first optical power amplifier includes an optical fiber input, an optical fiber output, and a doped fiber portion, wherein the first portion of light from the splitter is coupled into the optical fiber input of the first optical power amplifier. The second optical power amplifier includes an optical fiber input, an optical fiber output, and a doped fiber portion, wherein the second portion of light emitted from the splitter is coupled into the optical fiber input of the second optical power amplifier.
摘要:
Erbium doped fiber amplifiers for dense wavelength division multiplexed (DWDM) metro area optical networks may be configured as either high gain amplifiers or power amplifiers. The erbium doped fiber type, length, and pump power level are selected so that the shape of the gain spectra is approximately the same for single channel or multi-channel operation. In one embodiment, the same erbium doped fiber type and length is used for both power amplifiers and high gain amplifiers, reducing manufacturing costs.
摘要:
FIG. 1 is a front, top perspective view of a glider exercise device, showing my new design; FIG. 2 is a rear, bottom perspective view thereof; FIG. 3 is a front elevation view thereof; FIG. 4 is a rear elevation view thereof; FIG. 5 is a left side elevation view thereof; FIG. 6 is a right side elevation view thereof; FIG. 7 is a top plan view thereof; and, FIG. 8 is a bottom plan view thereof.
摘要:
Gate control of power semiconductor devices using reduced gate drivers is disclosed. A circuit breaker may include a multitude of transistors, such as insulated gate bipolar transistors (IGBTs), connected in series with one another. Each transistor may be connected to a respective gate resistor. Diodes may be connected between various gate resistors. One or more resistor-capacitor (RC) snubber circuits may be provided in parallel with one or more of the transistors. Likewise, one or more metal-oxide varistors (MOVs) may be connected in parallel to one or more of the transistors. A gate driver (e.g., a single gate drive) may be connected to the one or more diodes and an emitter of at least one of transistors.
摘要:
Methods and apparatuses for manufacturing are disclosed, including (a) providing an apparatus having: a laser; scanner; powder injection system; powder spreading system; dichroic filter; imager-and-processor; and computer; (b) programming the computer with specifications of a sample; (c) using the computer to set initial parameters based on the sample specifications; (d) adjusting a stage to position the sample; (e) focusing and scanning electromagnetic radiation onto the sample while powder is concurrently injected onto the sample in order to deposit a layer; (f) capturing two-dimensional images of the sample and probing the sample to determine whether the deposited layer was manufactured per the specifications; (g) use the computer to adjust the three-dimensional manufacturing parameters based on the determination made in step (f) prior to additively manufacturing a subsequent layer or making repairs; and (h) repeating steps (d), (e), (f), and (g) until the manufacture is complete. Other embodiments are described and claimed.
摘要:
A Metal Oxide Semiconductor (MOS) transistor comprising: a source; a gate; and a drain, the source, gate and drain being located in or on a well structure of a first doping polarity located in or on a substrate; wherein at least one of the source and the drain comprises a first structure comprising: a first region forming a first drift region, the first region being of a second doping polarity opposite the first doping polarity; a second region of the second doping polarity in or on the first region, the second region being a well region and having a doping concentration which is higher than the doping concentration of the first region; and a third region of the second doping polarity in or on the second region. Due to the presence of the second region the transistor may have a lower ON resistance when compared with a similar transistor which does not have the second region. The breakdown voltage may be influenced only to a small extent.