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    Storage nodes, phase change memory devices, and methods of manufacturing the same
    4.
    发明申请
    Storage nodes, phase change memory devices, and methods of manufacturing the same 有权
    存储节点，相变存储器件及其制造方法

    公开(公告)号：US20080093591A1

    公开(公告)日：2008-04-24

    申请号：US11907844

    申请日：2007-10-18

    申请人： Yoon-ho Khang ,  Ki-Joon Kim ,  Dong-seok Suh

    发明人： Yoon-ho Khang ,  Ki-Joon Kim ,  Dong-seok Suh

    IPC分类号： H01L47/00 ,  H01L21/06

    CPC分类号： H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666

    摘要： A storage node may include a bottom electrode contact layer, a phase change layer connected to the bottom electrode contact layer, and a top electrode layer connected to the phase change layer. The bottom electrode contact layer may protrude toward the phase change layer. A phase change memory device may include a switching device and the storage node. The switching device may be connected to the bottom electrode contact layer. A method of manufacturing the storage node may include forming a via hole in an insulating interlayer, at least partially filling the via hole to form a bottom electrode contact layer, protruding the bottom electrode contact layer from the via hole, and forming a phase change layer that covers the bottom electrode contact layer. A method of manufacturing a phase change memory device may include forming the switching device on a substrate and manufacturing the storage node.

    摘要翻译： 存储节点可以包括底部电极接触层，连接到底部电极接触层的相变层和连接到相变层的顶部电极层。 底部电极接触层可以向相变层突出。 相变存储器件可以包括切换装置和存储节点。 开关器件可以连接到底部电极接触层。 制造存储节点的方法可以包括在绝缘中间层中形成通孔，至少部分地填充通孔以形成底电极接触层，从底孔电极接触层从通孔突出，并形成相变层 覆盖底部电极接触层。 相变存储器件的制造方法可以包括在基板上形成开关器件并制造存储节点。

    Storage nodes, phase change memory devices, and methods of manufacturing the same
    5.
    发明授权
    Storage nodes, phase change memory devices, and methods of manufacturing the same 有权
    存储节点，相变存储器件及其制造方法

    公开(公告)号：US07696507B2

    公开(公告)日：2010-04-13

    申请号：US11907844

    申请日：2007-10-18

    申请人： Yoon-ho Khang ,  Ki-joon Kim ,  Dong-seok Suh

    发明人： Yoon-ho Khang ,  Ki-joon Kim ,  Dong-seok Suh

    IPC分类号： H01L47/00

    CPC分类号： H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666

    摘要： A storage node may include a bottom electrode contact layer, a phase change layer connected to the bottom electrode contact layer, and a top electrode layer connected to the phase change layer. The bottom electrode contact layer may protrude toward the phase change layer. A phase change memory device may include a switching device and the storage node. The switching device may be connected to the bottom electrode contact layer. A method of manufacturing the storage node may include forming a via hole in an insulating interlayer, at least partially filling the via hole to form a bottom electrode contact layer, protruding the bottom electrode contact layer from the via hole, and forming a phase change layer that covers the bottom electrode contact layer. A method of manufacturing a phase change memory device may include forming the switching device on a substrate and manufacturing the storage node.

    摘要翻译： 存储节点可以包括底部电极接触层，连接到底部电极接触层的相变层和连接到相变层的顶部电极层。 底部电极接触层可以向相变层突出。 相变存储器件可以包括切换装置和存储节点。 开关器件可以连接到底部电极接触层。 制造存储节点的方法可以包括在绝缘中间层中形成通孔，至少部分地填充通孔以形成底电极接触层，从底孔电极接触层从通孔突出，并形成相变层 覆盖底部电极接触层。 相变存储器件的制造方法可以包括在基板上形成开关器件并制造存储节点。

    Phase change random access memory devices and methods of operating the same
    8.
    发明申请
    Phase change random access memory devices and methods of operating the same 有权
    相变随机存取存储器件及其操作方法

    公开(公告)号：US20060266993A1

    公开(公告)日：2006-11-30

    申请号：US11443309

    申请日：2006-05-31

    申请人： Dong-seok Suh ,  Yong-young Park ,  Tae-sang Park ,  Yoon-ho Khang

    发明人： Dong-seok Suh ,  Yong-young Park ,  Tae-sang Park ,  Yoon-ho Khang

    IPC分类号： H01L47/00

    CPC分类号： H01L45/143 ,  G11C2213/52 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/1675

    摘要： Provided are phase change random access memory (PRAM) devices and methods of operating the same. The PRAM device may include a switching device, a lower electrode, a lower electrode contact layer, a phase change layer and/or an upper electrode. The lower electrode may be connected to a switching device. The lower electrode contact layer may be formed on the lower electrode. The phase change layer, which may include a bottom surface that contacts an upper surface of the lower electrode contact layer, may be formed on the lower electrode contact layer. The upper electrode may be formed on the phase change layer. The lower electrode contact layer may be formed of a material layer having an absolute value of a Seebeck coefficient higher than TiAlN. The Seebeck coefficient of the lower electrode contact layer may be negative. The material layer may have lower heat conductivity and/or approximately equivalent electrical resistance as TiAlN.

    摘要翻译： 提供了相移随机存取存储器（PRAM）装置及其操作方法。 PRAM器件可以包括开关器件，下电极，下电极接触层，相变层和/或上电极。 下电极可以连接到开关装置。 下电极接触层可以形成在下电极上。 可以在下电极接触层上形成可包括与下电极接触层的上表面接触的底面的相变层。 上电极可以形成在相变层上。 下电极接触层可以由绝缘值高于TiAlN的塞贝克系数的材料层形成。 下电极接触层的塞贝克系数可以为负。 该材料层可具有比TiAlN更低的导热性和/或近似等效的电阻。

    Method of operating and structure of phase change random access memory (PRAM)
    9.
    发明申请
    Method of operating and structure of phase change random access memory (PRAM) 有权
    相变随机存取存储器（PRAM）的操作和结构方法

    公开(公告)号：US20060152186A1

    公开(公告)日：2006-07-13

    申请号：US11329171

    申请日：2006-01-11

    申请人： Dong-seok Suh ,  Yoon-ho Khang ,  Sang-mock Lee ,  Jin-seo Noh

    发明人： Dong-seok Suh ,  Yoon-ho Khang ,  Sang-mock Lee ,  Jin-seo Noh

    IPC分类号： G05B19/29

    CPC分类号： G11C13/0004 ,  G11C11/5678 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2213/79

    摘要： Provided is a method of operating a phase change random access memory comprising a switching device and a storage node comprising a phase change layer. The method includes applying a reset current passing through the phase change layer from a lower portion of the phase change layer toward an upper portion of the phase change layer and being smaller than 1.6 mA to the storage node to change a portion of the phase change layer into an amorphous state. The set voltage is in an opposite direction is exemplary embodiments, and a connector is of small cross-sectional area.

    摘要翻译： 提供了一种操作包括切换装置和包括相变层的存储节点的相变随机存取存储器的方法。 该方法包括从相变层的下部向相变层的上部施加通过相变层的复位电流，并向存储节点施加小于1.6mA的改变相变层的一部分的复位电流 变成无定形状态。 设定电压是示例性实施例的相反方向，并且连接器具有小的横截面积。