公开(公告)号：US20100134398A1

公开(公告)日：2010-06-03

申请号：US12625640

申请日：2009-11-25

申请人： Yoshiaki TOYOTA ,  Mieko Matsumura

发明人： Yoshiaki TOYOTA ,  Mieko Matsumura

IPC分类号： G09G3/36

CPC分类号： G02F1/1368

摘要： A display device includes a plurality of thin-film transistors formed on a substrate on which a display area is formed. The display device also includes a gate electrode, a gate insulating film formed so as to cover the gate electrode, an semiconductor layer in an island shape formed on an upper surface of the gate insulating film so as to superimpose the gate electrode without protruding from the gate electrode when viewed planarly, an insulating film formed so as to cover the semiconductor layer, and a pair of electrodes electrically connected to the semiconductor layer respectively through a pair of through holes that are formed at the insulating film. The semiconductor layer is formed by sequentially laminating a crystalline semiconductor layer and an amorphous semiconductor layer. The pair of electrodes is respectively formed by sequentially laminating a semiconductor layer doped with impurities and a metal layer.

摘要翻译： 显示装置包括形成在其上形成有显示区域的基板上的多个薄膜晶体管。 显示装置还包括栅极电极，形成为覆盖栅极电极的栅极绝缘膜，形成在栅极绝缘膜的上表面上的岛状半导体层，以便叠置栅电极而不从 栅极电极，以覆盖半导体层的方式形成的绝缘膜，以及分别通过形成在绝缘膜上的一对通孔与半导体层电连接的一对电极。 半导体层通过依次层叠晶体半导体层和非晶半导体层而形成。 该对电极分别通过顺序层叠掺杂有杂质的半导体层和金属层而形成。

公开(公告)号：US20110133197A1

公开(公告)日：2011-06-09

申请号：US12958605

申请日：2010-12-02

申请人： Isao SUZUMURA ,  Yoshiaki TOYOTA ,  Mieko MATSUMURA

发明人： Isao SUZUMURA ,  Yoshiaki TOYOTA ,  Mieko MATSUMURA

IPC分类号： H01L29/04

CPC分类号： H01L29/66765 ,  H01L27/1248 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/78678 ,  H01L29/78696

摘要： A bottom gate-type thin film transistor includes a gate insulating film, an interlayer insulating film formed on the gate insulating film, having an opening which is formed in a formation region of a gate electrode, and a semiconductor film formed on the interlayer insulating film so as to cover the opening. The interlayer insulating film contains nitrides in an amount larger than that in the gate insulating film, and the semiconductor film includes a microcrystalline semiconductor film or a polycrystalline semiconductor film formed on semiconductor crystalline nuclei which are formed on the gate insulating film and the interlayer insulating film and contain at least Ge.

摘要翻译： 底栅型薄膜晶体管包括栅极绝缘膜，形成在栅极绝缘膜上的层间绝缘膜，具有形成在栅电极的形成区域中的开口，以及形成在层间绝缘膜上的半导体膜 以覆盖开幕。 层间绝缘膜含有比栅极绝缘膜大的氮化物，并且半导体膜包括在栅极绝缘膜和层间绝缘膜上形成的形成在半导体结晶核上的微晶半导体膜或多晶半导体膜 并至少含有Ge。

公开(公告)号：US20100102322A1

公开(公告)日：2010-04-29

申请号：US12606284

申请日：2009-10-27

申请人： Mieko MATSUMURA ,  Mutsuko HATANO ,  Yoshiaki TOYOTA ,  Takuo KAITOH

发明人： Mieko MATSUMURA ,  Mutsuko HATANO ,  Yoshiaki TOYOTA ,  Takuo KAITOH

IPC分类号： H01L33/00 ,  H01L21/30

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/78696

摘要： The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode.

摘要翻译： 提供具有形成在包括显示部分的基板上的薄膜晶体管的显示装置。 该薄膜晶体管包括：栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 半导体层叠膜，形成在所述栅极绝缘膜的顶部上，以在所述栅极上延伸，所述半导体层叠膜通过层叠至少多晶半导体膜和非晶半导体膜，第一电极和设置在顶部的第二电极而形成 的半导体层叠膜，以跨越叠加栅电极的区域彼此相对。 在显示装置中，半导体层叠膜形成在从第一电极延伸的布线的正下方并且紧接在从第二电极延伸的布线的下方。

公开(公告)号：US20110260168A1

公开(公告)日：2011-10-27

申请号：US13088515

申请日：2011-04-18

申请人： Yoshiaki TOYOTA

发明人： Yoshiaki TOYOTA

IPC分类号： H01L29/04

CPC分类号： H01L29/78621 ,  H01L27/1248 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/78696

摘要： Provided is an image display device including thin film transistors on a substrate, including: gate lines and drain lines intersecting the gate lines, each thin film transistor having, in a channel region, a laminate structure in which a gate electrode, a gate insulating film, and a semiconductor layer are laminated in the stated order from the substrate side; and a pair of removal regions in which parts of the gate insulating film are removed, which are formed on both sides of the gate electrode and formed in a channel width direction of the channel region, in which when W represents a width of the gate electrode in the channel width direction of the channel region, and R represents a width of the gate insulating film in the channel width direction, which is sandwiched between the pair of removal regions, R≧W is satisfied.

摘要翻译： 本发明提供一种在基板上具有薄膜晶体管的图像显示装置，具有与栅极线交叉的栅极线和漏极线，各个薄膜晶体管在沟道区域中具有栅电极，栅极绝缘膜 ，从衬底侧按顺序层叠半导体层; 以及一对去除区域，其中去除栅极绝缘膜的部分，其形成在栅电极的两侧并形成在沟道区的沟道宽度方向上，其中当W表示栅电极的宽度时 在通道区域的沟道宽度方向上，R表示夹在一对去除区域之间的沟道宽度方向上的栅极绝缘膜的宽度，R≥W。

公开(公告)号：US20140106490A1

公开(公告)日：2014-04-17

申请号：US14106287

申请日：2013-12-13

申请人： Tetsufumi KAWAMURA ,  Takeshi SATO ,  Mutsuko HATANO ,  Yoshiaki TOYOTA

发明人： Tetsufumi KAWAMURA ,  Takeshi SATO ,  Mutsuko HATANO ,  Yoshiaki TOYOTA

IPC分类号： H01L27/12

CPC分类号： H01L27/127 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869

摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.

摘要翻译： 提供了一种用于提高像素的开口率的显示装置。 在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极， 透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分 像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。

公开(公告)号：US20110049524A1

公开(公告)日：2011-03-03

申请号：US12844903

申请日：2010-07-28

申请人： Yoshiaki TOYOTA

发明人： Yoshiaki TOYOTA

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L33/08

CPC分类号： G02F1/1368 ,  G02F1/136213 ,  G02F2001/136231 ,  H01L27/1255

摘要： Provided is a display device including a thin-film transistor and a capacitor element, the thin-film transistor includes: a first insulating film (IN1) which is formed to cover an area where a gate electrode (GT) is formed; a second insulating film (IN2) which is formed on the first insulating film, the second insulating film having an opening (OP) formed in the area in plan view; a semiconductor layer (SCLt) which is formed on the second insulating film to cross the opening, the semiconductor layer including high concentration areas (CN); a third insulating film (IN3) which is formed on the semiconductor layer to expose apart of each of the high concentration areas; and a pair of electrodes (DT, ST) each having electrical connection to the part; and the capacitor element includes a dielectric film which is formed of the same layer and the same material as the third insulating film.

摘要翻译： 提供一种包括薄膜晶体管和电容器元件的显示装置，所述薄膜晶体管包括：形成为覆盖形成栅电极（GT）的区域的第一绝缘膜（IN1） 形成在所述第一绝缘膜上的第二绝缘膜（IN2），所述第二绝缘膜在平面图中形成在所述区域中的开口（OP）; 半导体层（SCLt），其形成在所述第二绝缘膜上以与所述开口交叉，所述半导体层包括高浓度区域（CN）; 第三绝缘膜（IN3），其形成在所述半导体层上以使每个所述高浓度区域分开; 和一对电极（DT，ST），每个电极与该部件电连接; 并且电容器元件包括由与第三绝缘膜相同的层和相同材料形成的电介质膜。

公开(公告)号：US20080094554A1

公开(公告)日：2008-04-24

申请号：US11907058

申请日：2007-10-09

申请人： Takeshi SATO ,  Yoshiaki TOYOTA

发明人： Takeshi SATO ,  Yoshiaki TOYOTA

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/133526 ,  G02F1/136213 ,  G02F1/136227

摘要： The present invention provides a transreflective type liquid crystal display unit, which can reduce power consumption of backlight and displays high-quality image. The liquid crystal display unit of the present invention comprises a first reflective electrode 105, which is installed on inner surface of one substrate 100 and has reflective surfaces on front and rear surfaces and is designed to have reflective lens structure with a convex portion to face to a counter electrode and has an opening 153 at the vertex of said convex portion. Further, the liquid crystal display unit has a second reflective film 104 having reflective surface on the surface facing to the first reflective electrode 105 between the first reflective electrode 105 and said one substrate 100 and under the opening 153 of the first reflective electrode 105. A light entering from the direction of said one substrate 100 is reflected by the rear surface of the first reflective electrode 105 and by the front surface of the second reflective film 104, and the light is converged to the opening 153 of the first reflective electrode 105 and is allowed to pass toward the other substrate 200.

摘要翻译： 本发明提供了一种透反型液晶显示单元，其可以降低背光的功耗并显示高质量的图像。 本发明的液晶显示装置包括：第一反射电极105，其安装在一个基板100的内表面上，并且在前表面和后表面上具有反射表面，并被设计成具有反射透镜结构，该反射透镜结构具有凸部以面对 对置电极，并且在所述凸部的顶点具有开口153。 此外，液晶显示单元具有在与第一反射电极105和所述一个基板100之间以及第一反射电极105的开口153下面的与第一反射电极105相对的表面上具有反射面的第二反射膜104。 从所述一个基板100的方向入射的光被第一反射电极105的后表面和第二反射膜104的前表面反射，并且光会聚到第一反射电极105的开口153 并允许其朝向另一基板200。