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公开(公告)号：US06616972B1
公开(公告)日：2003-09-09
申请号：US09256933
申请日：1999-02-24
IPC分类号： C23C1618
CPC分类号： C23C16/4481 , C23C16/34
摘要： A method for producing a material selected from the group consisting of metal oxide, metal oxynitride and mixtures thereof on a substrate, comprising; reacting a first reactant selected from the group consisting of (R1R2N)xM(═NR3)y, (R4R5N)xM[&eegr;2—R6N═C (R7)(R8)]y and mixtures thereof with an oxidant and up to 95 volume percent of a source of nitrogen selected from the group consisting of ammonia, N2O, NO, NO2, alkyl amines, N2H2, alkyl hydrazine, N2 and mixtures thereof, to produce said material on said substrate, where R1, R2, R3, R4, R5, R6, R7 and R8 are individually C1-6 alkyl, aryl or hydrogen, M═Ta, Nb, W or Mo or mixtures thereof, and when M═Ta or Nb, x=3 and y=1 and when M═W or Mo, y=x=2.
摘要翻译： 一种在基材上制备选自金属氧化物，金属氮氧化物及其混合物的材料的方法，包括： 使选自（R 1 R 2 N）x M（= NR 3）y，（R 4 R 5 N）x M [R 6 N = C（R 7）（R 8）] y的第一反应物及其与氧化剂的混合物和至多95体积％ 选自氨，N 2 O，NO，NO 2，烷基胺，N 2 H 2，烷基肼，N 2及其混合物的氮源，以在所述基底上产生所述材料，其中R 1，R 2，R 3，R 4，R 5 ，R6，R7和R8分别是C1-6烷基，芳基或氢，M = Ta，Nb，W或Mo或其混合物，当M = Ta或Nb时，x = 3和y = 1，当M = W 或Mo，y = x = 2。
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公开(公告)号：US07122222B2
公开(公告)日：2006-10-17
申请号：US10695379
申请日：2003-10-27
CPC分类号： H01L21/3185 , C07F7/10 , C23C16/308 , C23C16/345 , H01L21/0217 , H01L21/02219 , H01L21/0226 , H01L21/02271 , H01L21/02274 , H01L21/3125
摘要： Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula: [R12N—NH]nSi(R2)4−n where each R1 is independently selected from alkyl groups of C1 to C6; each R2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1–4. Some of the hydrazinosilanes are novel precursors.
摘要翻译： 使用下式的肼基硅烷在硅衬底上沉积氮化硅，氧化硅和氮氧化硅的硅介电沉积前体的方法：<？in-line-formula description =“In-line formula”end =“lead”？> [R 4 N-N N 2 N 2 N n N 2 N 2 N 2 N n N 2 N 2 N n N <？in-line-formula description =“In-line formula”end =“tail”？>其中每个R 1独立地选自C 1〜C的烷基至 C 6 < 每个R 2独立地选自氢，烷基，乙烯基，烯丙基和苯基; 并且n = 1-4。 一些肼基甲硅烷是新型前体。
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3.发明授权公开(公告)号：US07582574B2
公开(公告)日：2009-09-01
申请号：US11747019
申请日：2007-05-10
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/401
摘要： A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone; concurrently providing a source of oxygen to the reaction zone; concurrently providing a metal precursor to the reaction zone; reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be tuned based upon the relative atomic concentration of metal, silicon, and oxygen in the film.
摘要翻译： 一种在电子器件中形成作为高k电介质的金属硅酸盐的方法，包括以下步骤：向反应区提供二乙基硅烷; 同时向反应区提供氧源; 同时向反应区提供金属前体; 通过化学气相沉积使二乙基硅烷，氧源和金属前体反应，在包含电子器件的基片上形成金属硅酸盐。 金属优选为铪，锆或其混合物。 可以基于膜中金属，硅和氧的相对原子浓度来调节金属硅酸盐膜的介电常数。
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公开(公告)号：US07288145B2
公开(公告)日：2007-10-30
申请号：US11513950
申请日：2006-08-30
CPC分类号： H01L21/3185 , C07F7/10 , C23C16/308 , C23C16/345 , H01L21/0217 , H01L21/02219 , H01L21/0226 , H01L21/02271 , H01L21/02274 , H01L21/3125
摘要： A precursor composition is disclosed for use in the chemical vapor deposition of a material selected from the group consisiting of silicon oxynitride, silicon nitride, and silicon oxide. The composition comprises a hydrazinosilane of the formula: [R12N—NH]nSi(R2)4-n where each R1 is independently selected from alkyl groups of C1 to C6; each R2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1-4.
摘要翻译： 公开了用于化学气相沉积中的选自由氧氮化硅，氮化硅和氧化硅组成的组的材料的前体组合物。 组合物包含下式的肼基硅烷：<？in-line-formula description =“In-line Formulas”end =“lead”？> [R 1] 2 N -NH] n Si（R 2）4-n <？in-line-formula description =“In-line Formulas”end = “尾”→其中每个R 1独立地选自C 1至C 6的烷基; 每个R 2独立地选自氢，烷基，乙烯基，烯丙基和苯基; 并且n = 1-4。
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5.发明申请公开(公告)号：US20070281475A1
公开(公告)日：2007-12-06
申请号：US11747019
申请日：2007-05-10
IPC分类号： H01L21/44
CPC分类号： C23C16/401
摘要： A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone; concurrently providing a source of oxygen to the reaction zone; concurrently providing a metal precursor to the reaction zone; reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be tuned based upon the relative atomic concentration of metal, silicon, and oxygen in the film.
摘要翻译： 一种在电子器件中形成作为高k电介质的金属硅酸盐的方法，包括以下步骤：向反应区提供二乙基硅烷; 同时向反应区提供氧源; 同时向反应区提供金属前体; 通过化学气相沉积使二乙基硅烷，氧源和金属前体反应，在包含电子器件的基片上形成金属硅酸盐。 金属优选为铪，锆或其混合物。 可以基于膜中金属，硅和氧的相对原子浓度来调节金属硅酸盐膜的介电常数。
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6.发明授权Deposition and annealing of multicomponent ZrSnTi and HfSnTi oxide thin films using solventless liquid mixture of precursors 失效使用无溶剂的前体液体混合物沉积和退火多组分ZrSnTi和HfSnTi氧化物薄膜公开(公告)号：US06500499B1
公开(公告)日：2002-12-31
申请号：US09522634
申请日：2000-03-10
申请人： Yoshihide Senzaki , Arthur Kenneth Hochberg , David Allen Roberts , John Anthony Thomas Norman , Glenn Baldwin Alers , Robert McLemore Fleming
发明人： Yoshihide Senzaki , Arthur Kenneth Hochberg , David Allen Roberts , John Anthony Thomas Norman , Glenn Baldwin Alers , Robert McLemore Fleming
IPC分类号： B05D306
CPC分类号： C23C16/4481 , C23C16/40
摘要： Complex mixed metal containing thin films can be deposited by CVD from liquid mixtures of metal complexes without solvent by direct liquid injection and by other precursor dispersing method such as aerosol delivery with subsequent annealing to improve electrical properties of the deposited films. This process has potential for commercial success in microelectronics device fabrication of dielectrics, ferroelectrics, barrier metals/electrodes, superconductors, catalysts, and protective coatings. Application of this process, particularly the CVD of ZrSnTiOx (zirconium tin titanate, or ZTT) and HfSnTiOx (hafnium tin titanate, or HTT) thin films has been studied successfully.
摘要翻译： 通过CVD从金属络合物的液体混合物中通过直接液体注入和通过其它前体分散方法如气溶胶递送以及随后的退火以改善沉积膜的电性能，可以通过CVD沉积复杂的含金属的薄膜。 该方法在电介质，铁电体，阻挡金属/电极，超导体，催化剂和保护涂层的微电子器件制造中具有商业成功的潜力。 已经研究了该方法的应用，特别是ZrSnTiOx（锆钛酸锌或ZTT）和HfSnTiOx（钛酸铪钛酸盐或HTT）薄膜的CVD。
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7.发明授权Liquid precursor mixtures for deposition of multicomponent metal containing materials 失效用于沉积多组分含金属材料的液体前体混合物公开(公告)号：US06503561B1
公开(公告)日：2003-01-07
申请号：US09546452
申请日：2000-04-10
IPC分类号： C23C1618
CPC分类号： C23C18/1225 , C23C16/34 , C23C16/40 , C23C16/401 , C23C16/405 , C23C18/1216 , C23C18/1254 , C23C18/1258
摘要： The present invention is a composition for deposition of a mixed metal or metal compound layer, comprising a solventless mixture of at least two metal-ligand complex precursors, wherein the mixture is liquid at ambient conditions and the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs. The present invention is also a process for deposition of a multiple metal or metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, pyrazoles, and their fluorine, oxygen and nitrogen substituted analogs; b) delivering the solventless mixture by direct liquid injection to a flash vaporization zone to vaporize the solventless mixture; c) contacting the substrate under deposition conditions with a resulting vapor of the solventless mixture, and c) depositing a multiple metal or metal compound layer on the substrate from the solventless mixture.
摘要翻译： 本发明是用于沉积混合金属或金属化合物层的组合物，其包含至少两种金属 - 配体复合物前体的无溶剂混合物，其中所述混合物在环境条件下为液体，并且所述配体相同，并且选自 由烷基，醇盐，卤化物，氢化物，酰胺，酰亚胺，叠氮化物环戊二烯基，羰基以及它们的氟，氧和氮取代的类似物组成的组。 本发明还是一种在电子材料的基底上沉积多个金属或金属化合物层的方法，包括：a）在环境条件下提供构成液体的两种或更多种金属 - 配体复合物前体的无溶剂混合物， 其中配体相同并且选自烷基，醇盐，卤化物，氢化物，酰胺，酰亚胺，叠氮化物，硝酸盐，环戊二烯基，羰基，吡唑及其氟，氧和氮取代的类似物; b）通过直接液体注入将无溶剂混合物输送到闪蒸区域以蒸发无溶剂混合物; c）在沉积条件下使所述衬底与无溶剂混合物的所得蒸气接触，以及c）从所述无溶剂混合物在所述衬底上沉积多个金属或金属化合物层。
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8.发明授权Process for metal metalloid oxides and nitrides with compositional gradients 失效具有组成梯度的金属准金属氧化物和氮化物的工艺公开(公告)号：US06537613B1
公开(公告)日：2003-03-25
申请号：US09546867
申请日：2000-04-10
IPC分类号： C23C1606
CPC分类号： C23C16/52 , C23C16/029
摘要： A process for deposition of a multiple metal and metalloid compound layer with a compositional gradient of the metal and metalloid in the layer on a substrate of an electronic material, comprising: a) providing two or more metal-ligand and metalloid-ligand complex precursors, wherein the ligands are preferably the same; b) delivering the precursors to a deposition zone where the substrate is located; c) contacting the substrate under deposition conditions with the precursors; d) varying the temperature of deposition from a first temperature to a second distinct temperature which is at least 40° C. from said first temperature during the contact, and e) depositing a multiple metal and metalloid compound layer on the substrate from the precursors resulting in the compositional gradient of the metal and metalloid in the layer as a result of step d). An oxygen source can be added to result in a metal-metalloid oxide, or a nitrogen source can be added to result in a metal-metalloid nitride, or a mixture of an oxygen and a nitrogen source can be added to result in a metal-metalloid oxynitride. The metalloid would preferably be silicon.
摘要翻译： 一种用于在电子材料的基底上的层中沉积具有金属和准金属的组成梯度的多金属和准金属化合物层的方法，包括：a）提供两种或更多种金属 - 配体和准金属 - 配体复合物前体， 其中配体优选相同; b）将前体输送到基底所在的沉积区; c）在沉积条件下将基材与前体接触; d）在接触期间将沉积温度从第一温度变化到与所述第一温度至少40℃的第二不同温度，以及e）从所述前体沉积多个金属和准金属化合物层到所述衬底上， 在层中的金属和准金属的组成梯度中作为步骤d）的结果。 可以加入氧源以产生金属 - 类金属氧化物，或者可以加入氮源以产生金属 - 准金属氮化物，或者可以加入氧和氮源的混合物以产生金属 - 准金属氧氮化物 准金属将优选为硅。
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公开(公告)号：US06319567B1
公开(公告)日：2001-11-20
申请号：US09281616
申请日：1999-03-30
IPC分类号： C23C1634
CPC分类号： C23C16/4481 , C23C16/34
摘要： A method for producing a tantalum nitride layer on a substrate, comprising; directly injecting a liquid mixture of (R1R2N)3Ta(═NR3) and (R4R5N)3Ta[&eegr;2—R6N═C (R7)(R8)] into a dispersing zone followed by delivering the dispersed mixture into a reactor containing the substrate at elevated temperature and reacting the mixture with a source of nitrogen selected from the group consisting of ammonia, alkyl amines, N2H2, alkyl hydrazine, N2 and mixtures thereof, to produce the tantalum nitride layer on the substrate, where R1, R2, R3, R4, R5, R6, R7 and R8 are individually C1-6 alkyl, aryl or hydrogen.
摘要翻译： 一种在基板上制造氮化钽层的方法，包括： 将（R1R2N）3Ta（= NR3）和（R4R5N）3Ta-R6N = C（R7）（R8）]的液体混合物直接注入到分散区中，然后将分散的混合物输送到含有底物的反应器中， 温度并使混合物与选自氨，烷基胺，N 2 H 2，烷基肼，N 2及其混合物的氮源反应，以在衬底上产生氮化钽层，其中R1，R2，R3，R4， R 5，R 6，R 7和R 8分别是C 1-6烷基，芳基或氢。
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公开(公告)号：US08288577B2
公开(公告)日：2012-10-16
申请号：US13051591
申请日：2011-03-18
摘要： Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films.The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.
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