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公开(公告)号：US06616972B1
公开(公告)日：2003-09-09
申请号：US09256933
申请日：1999-02-24
IPC分类号： C23C1618
CPC分类号： C23C16/4481 , C23C16/34
摘要： A method for producing a material selected from the group consisting of metal oxide, metal oxynitride and mixtures thereof on a substrate, comprising; reacting a first reactant selected from the group consisting of (R1R2N)xM(═NR3)y, (R4R5N)xM[&eegr;2—R6N═C (R7)(R8)]y and mixtures thereof with an oxidant and up to 95 volume percent of a source of nitrogen selected from the group consisting of ammonia, N2O, NO, NO2, alkyl amines, N2H2, alkyl hydrazine, N2 and mixtures thereof, to produce said material on said substrate, where R1, R2, R3, R4, R5, R6, R7 and R8 are individually C1-6 alkyl, aryl or hydrogen, M═Ta, Nb, W or Mo or mixtures thereof, and when M═Ta or Nb, x=3 and y=1 and when M═W or Mo, y=x=2.
摘要翻译： 一种在基材上制备选自金属氧化物，金属氮氧化物及其混合物的材料的方法，包括： 使选自（R 1 R 2 N）x M（= NR 3）y，（R 4 R 5 N）x M [R 6 N = C（R 7）（R 8）] y的第一反应物及其与氧化剂的混合物和至多95体积％ 选自氨，N 2 O，NO，NO 2，烷基胺，N 2 H 2，烷基肼，N 2及其混合物的氮源，以在所述基底上产生所述材料，其中R 1，R 2，R 3，R 4，R 5 ，R6，R7和R8分别是C1-6烷基，芳基或氢，M = Ta，Nb，W或Mo或其混合物，当M = Ta或Nb时，x = 3和y = 1，当M = W 或Mo，y = x = 2。
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公开(公告)号：US07122222B2
公开(公告)日：2006-10-17
申请号：US10695379
申请日：2003-10-27
CPC分类号： H01L21/3185 , C07F7/10 , C23C16/308 , C23C16/345 , H01L21/0217 , H01L21/02219 , H01L21/0226 , H01L21/02271 , H01L21/02274 , H01L21/3125
摘要： Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula: [R12N—NH]nSi(R2)4−n where each R1 is independently selected from alkyl groups of C1 to C6; each R2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1–4. Some of the hydrazinosilanes are novel precursors.
摘要翻译： 使用下式的肼基硅烷在硅衬底上沉积氮化硅，氧化硅和氮氧化硅的硅介电沉积前体的方法：<？in-line-formula description =“In-line formula”end =“lead”？> [R 4 N-N N 2 N 2 N n N 2 N 2 N 2 N n N 2 N 2 N n N <？in-line-formula description =“In-line formula”end =“tail”？>其中每个R 1独立地选自C 1〜C的烷基至 C 6 < 每个R 2独立地选自氢，烷基，乙烯基，烯丙基和苯基; 并且n = 1-4。 一些肼基甲硅烷是新型前体。
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3.发明授权公开(公告)号：US07582574B2
公开(公告)日：2009-09-01
申请号：US11747019
申请日：2007-05-10
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/401
摘要： A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone; concurrently providing a source of oxygen to the reaction zone; concurrently providing a metal precursor to the reaction zone; reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be tuned based upon the relative atomic concentration of metal, silicon, and oxygen in the film.
摘要翻译： 一种在电子器件中形成作为高k电介质的金属硅酸盐的方法，包括以下步骤：向反应区提供二乙基硅烷; 同时向反应区提供氧源; 同时向反应区提供金属前体; 通过化学气相沉积使二乙基硅烷，氧源和金属前体反应，在包含电子器件的基片上形成金属硅酸盐。 金属优选为铪，锆或其混合物。 可以基于膜中金属，硅和氧的相对原子浓度来调节金属硅酸盐膜的介电常数。
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公开(公告)号：US07288145B2
公开(公告)日：2007-10-30
申请号：US11513950
申请日：2006-08-30
CPC分类号： H01L21/3185 , C07F7/10 , C23C16/308 , C23C16/345 , H01L21/0217 , H01L21/02219 , H01L21/0226 , H01L21/02271 , H01L21/02274 , H01L21/3125
摘要： A precursor composition is disclosed for use in the chemical vapor deposition of a material selected from the group consisiting of silicon oxynitride, silicon nitride, and silicon oxide. The composition comprises a hydrazinosilane of the formula: [R12N—NH]nSi(R2)4-n where each R1 is independently selected from alkyl groups of C1 to C6; each R2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1-4.
摘要翻译： 公开了用于化学气相沉积中的选自由氧氮化硅，氮化硅和氧化硅组成的组的材料的前体组合物。 组合物包含下式的肼基硅烷：<？in-line-formula description =“In-line Formulas”end =“lead”？> [R 1] 2 N -NH] n Si（R 2）4-n <？in-line-formula description =“In-line Formulas”end = “尾”→其中每个R 1独立地选自C 1至C 6的烷基; 每个R 2独立地选自氢，烷基，乙烯基，烯丙基和苯基; 并且n = 1-4。
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5.发明申请公开(公告)号：US20070281475A1
公开(公告)日：2007-12-06
申请号：US11747019
申请日：2007-05-10
IPC分类号： H01L21/44
CPC分类号： C23C16/401
摘要： A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone; concurrently providing a source of oxygen to the reaction zone; concurrently providing a metal precursor to the reaction zone; reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be tuned based upon the relative atomic concentration of metal, silicon, and oxygen in the film.
摘要翻译： 一种在电子器件中形成作为高k电介质的金属硅酸盐的方法，包括以下步骤：向反应区提供二乙基硅烷; 同时向反应区提供氧源; 同时向反应区提供金属前体; 通过化学气相沉积使二乙基硅烷，氧源和金属前体反应，在包含电子器件的基片上形成金属硅酸盐。 金属优选为铪，锆或其混合物。 可以基于膜中金属，硅和氧的相对原子浓度来调节金属硅酸盐膜的介电常数。
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公开(公告)号：US20120148745A1
公开(公告)日：2012-06-14
申请号：US12964266
申请日：2010-12-09
申请人： Manchao Xiao , Liu Yang , Kirk Scott Cuthill , Heather Regina Bowen , Bing Han , Mark Leonard O'Neill
发明人： Manchao Xiao , Liu Yang , Kirk Scott Cuthill , Heather Regina Bowen , Bing Han , Mark Leonard O'Neill
CPC分类号： C23C16/401 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02222 , H01L21/02271 , H01L21/02274 , H01L21/0228
摘要： This invention related to method to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of: R1nR2mSi(NR3R4)4-n-m; and, a cyclic silazane of (R1R2SiNR3)p, where R1 is an alkenyl or an aromatic, such as vinyl, allyl, and phenyl; R2, R3, and R4 are selected from H, alkyl with C1-C10, linear, branched, or cyclic, an alkenyl with C2-C10 linear, branched, or cyclic, and aromatic; n=1-3, m=0-2; p=3-4.
摘要翻译： 本发明涉及使用热CVD法，ALD法或循环CVD法在HF溶液中具有非常低的湿蚀刻速率的二氧化硅膜的方法，其中硅前体选自以下之一：R1nR2mSi（NR3R4）4-nm ; 和（R 1 R 2 SiNR 3）p的环状硅氮烷，其中R 1是烯基或芳族，例如乙烯基，烯丙基和苯基; R2，R3和R4选自H为具有C1-C10，直链，支链或环状的烷基，具有C2-C10直链，支链或环状和芳族的烯基; n = 1-3，m = 0-2; p = 3-4。
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公开(公告)号：US20100233886A1
公开(公告)日：2010-09-16
申请号：US12717572
申请日：2010-03-04
申请人： Liu Yang , Manchao Xiao , Kirk Scott Cuthill , Bing Han , Mark Leonard O'Neill
发明人： Liu Yang , Manchao Xiao , Kirk Scott Cuthill , Bing Han , Mark Leonard O'Neill
IPC分类号： H01L21/316
CPC分类号： H01L21/02164 , C23C16/30 , C23C16/308 , C23C16/401 , H01L21/0228
摘要： Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.
摘要翻译： 这里描述的是形成包括硅的介电膜的方法，所述介电膜包括硅，例如但不限于氧化硅，碳氧化硅，碳化硅及其组合，其表现出以下特征中的至少一个：低湿蚀刻电阻，介电常数 为6.0或更低，和/或可承受高温快速热退火工艺。 本文还公开了在待加工物体上形成介电膜或涂层的方法，例如半导体晶片。
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8.发明授权公开(公告)号：US07064224B1
公开(公告)日：2006-06-20
申请号：US11051140
申请日：2005-02-04
CPC分类号： C07F15/065 , C07F7/10 , C07F15/025 , C07F15/045 , C23C16/18
摘要： This invention is related to organometallic precursors and deposition processes for fabricating conformal metal containing films on substrates such as silicon, metal nitrides and other metal layers.The organometallic precursors are N,N′-alkyl-1,1-alkylsilylamino metal complexes represented by the formula: wherein M is a metal selected from Group VIIb, VIII, IX and X, and specific examples include cobalt, iron, nickel, manganese, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium, and the R1-5 can be same or different selected from hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl.
摘要翻译： 本发明涉及用于在诸如硅，金属氮化物和其它金属层的衬底上制造含适形金属膜的有机金属前体和沉积工艺。 有机金属前体是由下式表示的N，N'-烷基-1,1-烷基甲硅烷基氨基金属络合物：其中M是选自VIIb，VIII，IX和X族的金属，具体实例包括钴，铁，镍，锰 ，钌，锌，铜，钯，铂，铱，铼，锇和R 1-5可以相同或不同，选自氢，烷基，烷氧基，氟烷基和烷氧基，脂环族和 芳基。
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公开(公告)号：US08703624B2
公开(公告)日：2014-04-22
申请号：US12717572
申请日：2010-03-04
申请人： Liu Yang , Manchao Xiao , Kirk Scott Cuthill , Bing Han , Mark Leonard O'Neill
发明人： Liu Yang , Manchao Xiao , Kirk Scott Cuthill , Bing Han , Mark Leonard O'Neill
IPC分类号： H01L21/316
CPC分类号： H01L21/02164 , C23C16/30 , C23C16/308 , C23C16/401 , H01L21/0228
摘要： Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.
摘要翻译： 这里描述的是形成包括硅的介电膜的方法，所述介电膜包括硅，例如但不限于氧化硅，碳氧化硅，碳化硅及其组合，其表现出以下特征中的至少一个：低湿蚀刻电阻，介电常数 为6.0或更低，和/或可承受高温快速热退火工艺。 本文还公开了在待加工物体上形成介电膜或涂层的方法，例如半导体晶片。
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10.发明授权Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes 有权使用氨基乙烯基硅烷沉积二氧化硅或氧化硅膜的方法公开(公告)号：US08460753B2
公开(公告)日：2013-06-11
申请号：US12964266
申请日：2010-12-09
申请人： Manchao Xiao , Liu Yang , Kirk Scott Cuthill , Heather Regina Bowen , Bing Han , Mark Leonard O'Neill
发明人： Manchao Xiao , Liu Yang , Kirk Scott Cuthill , Heather Regina Bowen , Bing Han , Mark Leonard O'Neill
IPC分类号： C23C16/40
CPC分类号： C23C16/401 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02222 , H01L21/02271 , H01L21/02274 , H01L21/0228
摘要： Described herein are methods to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of: R1nR2mSi(NR3R4)4-n-m; and, a cyclic silazane of (R1R2SiNR3)p, where R1 is an alkenyl or an aromatic, such as vinyl, allyl, and phenyl; R2, R3, and R4 are selected from H, alkyl with C1-C10, linear, branched, or cyclic, an alkenyl with C2-C10 linear, branched, or cyclic, and aromatic; n=1-3, m=0-2; p=3-4.
摘要翻译： 本文描述了形成二氧化硅膜的方法，其使用热CVD法，ALD法或循环CVD法在HF溶液中具有极低的湿蚀刻速率，其中硅前体选自以下之一：R1nR2mSi（NR3R4）4-n-m; 和（R 1 R 2 SiNR 3）p的环状硅氮烷，其中R 1是烯基或芳族，例如乙烯基，烯丙基和苯基; R2，R3和R4选自H为具有C1-C10，直链，支链或环状的烷基，具有C2-C10直链，支链或环状和芳族的烯基; n = 1-3，m = 0-2; p = 3-4。
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