CHEMICALLY AMPLIFIED RESIST COMPOSITION AND CHEMICALLY AMPLIFIED RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY
    4.
    发明申请
    CHEMICALLY AMPLIFIED RESIST COMPOSITION AND CHEMICALLY AMPLIFIED RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY 有权
    化学放大抗蚀剂组合物和化学放大抗蚀剂组合物

    公开(公告)号:US20090220890A1

    公开(公告)日:2009-09-03

    申请号:US12395963

    申请日:2009-03-02

    IPC分类号: G03F7/039 G03F7/20

    摘要: A chemically amplified resist composition, comprising: a resin which includes a structural unit having an acid-labile group in a side chain, a structural unit represented by the formula (I) and a structural unit having a polycyclic lactone structure, and which is soluble in an organic solvent and insoluble or poorly soluble in an alkali aqueous solution but rendered soluble in an alkali aqueous solution by the action of an acid; and an acid generator represented by the formula (II). wherein X1 represents a hydrogen atom, a C1 to C4 alkyl group, etc., Y in each occurrence independently represent a hydrogen atom or an alkyl group, and n is an integer of 1 to 14, R1 to R4 independently represent a hydrogen atom, an alkyl group, etc., and A+ represents an organic counterion, E− represents CF3SO3—, C2F5SO3—, C4F9SO3—, etc., Y1 and Y2 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group.

    摘要翻译: 一种化学放大抗蚀剂组合物,其包含:树脂,其包含在侧链中具有酸不稳定基团的结构单元,由式(I)表示的结构单元和具有多环内酯结构的结构单元,并且其是可溶的 在有机溶剂中,不溶于或难溶于碱水溶液,但通过酸的作用可溶于碱水溶液; 和由式(II)表示的酸发生剂。 其中X 1表示氢原子,C 1〜C 4烷基等,Y各自独立地表示氢原子或烷基,n表示1〜14的整数,R 1〜R 4分别表示氢原子, 烷基等,A +表示有机抗衡离子,E表示CF 3 SO 3 - ,C 2 F 5 SO 3 - ,C 4 F 9 SO 3 - 等,Y 1和Y 2分别表示氟原子或C 1〜C 6全氟烷基。

    RESIN AND RESIST COMPOSITION
    5.
    发明申请
    RESIN AND RESIST COMPOSITION 有权
    树脂和树脂组合物

    公开(公告)号:US20100323296A1

    公开(公告)日:2010-12-23

    申请号:US12821008

    申请日:2010-06-22

    摘要: A resin comprises a structural unit derived from a compound represented by the formula (aa) wherein T represents a C4 to C36 alicyclic hydrocarbon group, the hydrogen atom contained in the alicyclic hydrocarbon group may be replaced by a halogen atom, a hydroxyl group, a C1 to C12 alkyl group optionally substituted with a halogen atom or a hydroxyl group, a C1 to C12 alkoxyl group, a C6 to C12 aryl group, a C7 to C12 aralkyl group, a glycidyloxy group, a C2 to C4 acyl group, an alkoxycarbonyl group, an alkanoyloxyalkyl group or a cyano group, and the —CH2— contained in the alicyclic hydrocarbon group is replaced by at least one —SO2— and furthermore may be replaced by —CO—, —O—, —S—, —SO2— or —N(Rc)—; Rc represents a hydrogen atom or a C1 to C6 alkyl group; R1 represents a hydrogen atom, a halogen atom, or a C1 to C6 alkyl group that may optionally has halogen atoms; and Z1 represents an optionally substituted C1 to C17 saturated hydrocarbon group, and the —CH2— contained in the saturated hydrocarbon group may be replaced by —CO—, —O—, —S— or —N(Rc)—.

    摘要翻译: 树脂包含衍生自由式(aa)表示的化合物的结构单元,其中T表示C4-C36脂环族烃基,脂环族烃基中所含的氢原子可以被卤素原子,羟基, 任选被卤素原子或羟基取代的C1〜C12烷基,C1〜C12烷氧基,C6〜C12芳基,C7〜C12芳烷基,缩水甘油氧基,C2〜C4酰基,烷氧基羰基 基团,烷酰氧基烷基或氰基,脂环族烃基中的-CH 2被至少一个-SO 2 - 代替,并且还可以被-CO - , - O - , - S - , - SO 2 - 或-N(Rc) - ; Rc表示氢原子或C1〜C6烷基; R1表示氢原子,卤素原子或可任选具有卤素原子的C1-C6烷基; Z 1表示任选取代的C 1〜C 17饱和烃基,饱和烃基中的-CH 2可以被-CO - , - O - , - S-或-N(R c) - 代替。

    PROCESS FOR PRODUCING PHOTORESIST PATTERN
    6.
    发明申请
    PROCESS FOR PRODUCING PHOTORESIST PATTERN 审中-公开
    生产光电子图案的工艺

    公开(公告)号:US20100273112A1

    公开(公告)日:2010-10-28

    申请号:US12763357

    申请日:2010-04-20

    IPC分类号: G03F7/20

    摘要: The present invention provides a process for producing a photoresist pattern comprising the following steps (A) to (D): (A) a step of forming the first photoresist film on a substrate using the first photoresist composition comprising a resin comprising a structural unit having an acid-labile group in its side chain and being itself insoluble or poorly soluble in an alkali aqueous solution but becoming soluble in an alkali aqueous solution by the action of an acid, an acid generator, and a cross-linking agent, exposing the first photoresist film to radiation followed by developing the exposed first photoresist film to obtain the first photoresist pattern, (B) a step of baking the obtained first photoresist pattern at 190 to 250° C. for 10 to 60 seconds, (C) a step of forming the second photoresist film on the substrate on which the first photoresist pattern has been formed using the second photoresist composition, exposing the second photoresist film to radiation, and (D) a step of developing the exposed second photoresist film to obtain the second photoresist pattern.

    摘要翻译: 本发明提供一种制造光致抗蚀剂图案的方法,包括以下步骤(A)至(D):(A)使用包含树脂的第一光致抗蚀剂组合物在基板上形成第一光致抗蚀剂膜的步骤,所述树脂包括具有 其侧链酸性不稳定基团本身不溶于或难溶于碱水溶液,但通过酸,酸发生剂和交联剂的作用变得可溶于碱性水溶液中,使第一 将曝光的第一光致抗蚀剂膜显影以获得第一光致抗蚀剂图案,(B)在190至250℃下烘烤获得的第一光致抗蚀剂图案10至60秒的步骤,(C)步骤 在所述基板上形成所述第二光致抗蚀剂膜,使用所述第二光致抗蚀剂组合物在其上形成所述第一光致抗蚀剂图案,将所述第二光致抗蚀剂膜暴露于辐射,以及(D) 旋转曝光的第二光致抗蚀剂膜以获得第二光致抗蚀剂图案。

    CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION
    7.
    发明申请
    CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION 审中-公开
    化学放大正电阻组合物

    公开(公告)号:US20100167199A1

    公开(公告)日:2010-07-01

    申请号:US12641914

    申请日:2009-12-18

    IPC分类号: G03F7/004

    摘要: A chemically amplified positive resist composition comprising: a resin comprising a structural unit having an acid-labile group in a side chain and an acid generator wherein the resin contains 40 to 90% by mole of the structural unit having an acid-labile group in a side chain based on all the structural units and the structural unit having an acid-labile group in a side chain contains a structural unit represented by the formula (I): wherein R1 represents a hydrogen atom or a methyl group, Z represents a single bond or —(CH2)k—CO—O—, k represents an integer of 1 to 4, R2 is independently in each occurrence a C1-C6 alkyl group, and m represents an integer of 0 to 14.

    摘要翻译: 一种化学放大正型抗蚀剂组合物,其包含:树脂,其包含在侧链中具有酸不稳定基团的结构单元和酸产生剂,其中所述树脂含有40-90%摩尔具有酸不稳定基团的结构单元, 基于所有结构单元的侧链和在侧链中具有酸不稳定基团的结构单元含有由式(I)表示的结构单元:其中R 1表示氢原子或甲基,Z表示单键 或 - (CH 2)k -CO-O-,k表示1〜4的整数,R 2在每次出现时独立地为C1-C6烷基,m表示0〜14的整数。

    Chemical amplification type positive resist composition and a resin therefor
    8.
    发明授权
    Chemical amplification type positive resist composition and a resin therefor 有权
    化学扩增型正型抗蚀剂组合物及其树脂

    公开(公告)号:US07175963B2

    公开(公告)日:2007-02-13

    申请号:US10952793

    申请日:2004-09-30

    IPC分类号: G03C1/73 G03F7/039

    摘要: A resin which comprises (1) at least one structural unit selected from the group consisting of a structural unit derived from 3-hydroxy-1-adamantyl (meth)acrylate, a structural unit derived from 3,5-dihydroxy-1-adamantyl (meth)acrylate, a structural unit derived from (meth)acryloyloxy-γ-butyrolactone having a lactone ring optionally substituted by alkyl, a structural unit of the formula (Ia) and a structural unit of the formula and (2) a structural unit of the formula (II) and which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid; and also provides a chemical amplification type positive resist composition comprising a resin defined above and an acid generator.

    摘要翻译: 一种树脂,其包含(1)至少一种选自由(甲基)丙烯酸3-羟基-1-金刚烷基酯衍生的结构单元的结构单元,衍生自3,5-二羟基-1-金刚烷基( (甲基)丙烯酸酯,具有任选被烷基取代的内酯环的(甲基)丙烯酰氧基-γ-丁内酯的结构单元,式(Ia)的结构单元和式的结构单元和(2)结构单元 式(II),其本身在碱性水溶液中不溶或难溶,但通过酸作用而溶于碱性水溶液中; 并且还提供包含上述树脂和酸发生剂的化学放大型正性抗蚀剂组合物。

    Chemically amplified positive resist composition
    9.
    发明授权
    Chemically amplified positive resist composition 有权
    化学放大正光刻胶组合物

    公开(公告)号:US08062830B2

    公开(公告)日:2011-11-22

    申请号:US12425759

    申请日:2009-04-17

    IPC分类号: G03F7/004

    摘要: The present invention provides a chemically amplified resist composition comprising: a resin (A) which contains no fluorine atom and a structural unit (a1) having an acid-labile group in a side chain, a resin (B) which contains a structural unit (b2) having a fluorine-containing group in a side chain and at least one structural unit selected from the group consisting of a structural unit (b1) having an acid-labile group, a structural unit (b3) having a hydroxyl group and a structural unit (b4) having a lactone structure in a side chain, and an acid generator, wherein the content of the structural unit (b1) based on the total units of the resin (B) is less than 10 mol %.

    摘要翻译: 本发明提供了一种化学放大抗蚀剂组合物,其包含:不含氟原子的树脂(A)和侧链具有酸不稳定基团的结构单元(a1),含有结构单元的树脂(B) b2)和具有酸不稳定基团的结构单元(b1),具有羟基的结构单元(b3)和结构单元(b3)的至少一种结构单元,在侧链中具有含氟基团, 在侧链中具有内酯结构的单元(b4)和酸产生剂,其中基于树脂(B)的总单元的结构单元(b1)的含量小于10摩尔%。

    Chemically amplified resist composition and chemically amplified resist composition for immersion lithography
    10.
    发明授权
    Chemically amplified resist composition and chemically amplified resist composition for immersion lithography 有权
    用于浸没光刻的化学放大抗蚀剂组合物和化学放大抗蚀剂组合物

    公开(公告)号:US08062829B2

    公开(公告)日:2011-11-22

    申请号:US12395963

    申请日:2009-03-02

    IPC分类号: G03F7/004 G03F7/30

    摘要: A chemically amplified resist composition, comprising: a resin which includes a structural unit having an acid-labile group in a side chain, a structural unit represented by the formula (I) and a structural unit having a polycyclic lactone structure, and which is soluble in an organic solvent and insoluble or poorly soluble in an alkali aqueous solution but rendered soluble in an alkali aqueous solution by the action of an acid; and an acid generator represented by the formula (II). wherein X1 represents a hydrogen atom, a C1 to C4 alkyl group, etc., Y in each occurrence independently represent a hydrogen atom or an alkyl group, and n is an integer of 1 to 14, R1 to R4 independently represent a hydrogen atom, an alkyl group, etc., and A+ represents an organic counterion, E− represents CF3SO3—, C2F5SO3—, C4F9SO3—, etc., Y1 and Y2 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group.

    摘要翻译: 一种化学放大抗蚀剂组合物,其包含:树脂,其包含在侧链中具有酸不稳定基团的结构单元,由式(I)表示的结构单元和具有多环内酯结构的结构单元,并且其是可溶的 在有机溶剂中,不溶于或难溶于碱水溶液,但通过酸的作用可溶于碱水溶液; 和由式(II)表示的酸发生剂。 其中X 1表示氢原子,C 1〜C 4烷基等,Y各自独立地表示氢原子或烷基,n表示1〜14的整数,R 1〜R 4分别表示氢原子, 烷基等,A +表示有机抗衡离子,E表示CF 3 SO 3 - ,C 2 F 5 SO 3 - ,C 4 F 9 SO 3 - 等,Y 1和Y 2分别表示氟原子或C 1〜C 6全氟烷基。