公开(公告)号：US07097784B2

公开(公告)日：2006-08-29

申请号：US10742992

申请日：2003-12-23

申请人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

发明人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

IPC分类号： B44C1/22 ,  C03C15/00

CPC分类号： H01L21/67248 ,  H01L21/31111 ,  H01L21/67086

摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.

摘要翻译： 一种用于在包括填充有蚀刻剂并能够设定液体温度和工艺顺序的蚀刻液的蚀刻装置中蚀刻半导体晶片的方法，包括选择适合于半导体晶片的蚀刻的预定蚀刻程序，将半导体晶片的数量计数为 在蚀刻之前将其装入蚀刻液中，基于计数得出蚀刻剂的温度下降，将蚀刻剂的液体温度设定为通过将蚀刻剂的温度降加到预定蚀刻温度A而获得的初始温度B 在预定的时刻对蚀刻液中的半导体晶片进行充电，以蚀刻半导体晶片，并在液体温度达到初始温度B之前或之后将液体温度设定在预定蚀刻温度A。

公开(公告)号：US07776756B1

公开(公告)日：2010-08-17

申请号：US11878965

申请日：2007-07-30

申请人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

发明人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/67253 ,  H01L21/31111 ,  H01L21/67086

摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

摘要翻译： 蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

公开(公告)号：US20050230045A1

公开(公告)日：2005-10-20

申请号：US10922905

申请日：2004-08-23

申请人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

发明人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

IPC分类号： C23F1/08 ,  B44C1/22 ,  C23F1/00 ,  C23F1/16 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311

CPC分类号： H01L21/67253 ,  H01L21/31111 ,  H01L21/67086

摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

摘要翻译： 蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

公开(公告)号：US20100210110A1

公开(公告)日：2010-08-19

申请号：US11878965

申请日：2007-07-30

申请人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

发明人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

IPC分类号： H01L21/311

CPC分类号： H01L21/67253 ,  H01L21/31111 ,  H01L21/67086

摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

摘要翻译： 蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

公开(公告)号：US20060255014A1

公开(公告)日：2006-11-16

申请号：US11490054

申请日：2006-07-21

申请人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

发明人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

IPC分类号： C03C15/00 ,  H01L21/302 ,  B44C1/22

CPC分类号： H01L21/67248 ,  H01L21/31111 ,  H01L21/67086

摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.

公开(公告)号：US20090317980A1

公开(公告)日：2009-12-24

申请号：US12548814

申请日：2009-08-27

申请人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

发明人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

IPC分类号： H01L21/306

CPC分类号： H01L21/67086 ,  H01L21/30604 ,  H01L21/31111

摘要： A filter connectable to an external circulating system, the circulating system being included by a substrate treatment apparatus which etches a substrate with an H3PO4 solution, the filter includes:a chemical feeding port which permits feed of H3PO4 solution containing particles deposited due to etching of a substrate;an H2O adding port which permits the addition of H2O;a filter film which removes the particles from the H3PO4 solution whose heat distribution is made ununiform by the addition of H2O; anda protection member which is disposed between the H2O adding port and the filter film and which protects the filter film from bumping of the H3PO4 solution that is causable by the addition of H2O.

摘要翻译： 一种可连接到外部循环系统的过滤器，该循环系统由用H 3 PO 4溶液蚀刻衬底的衬底处理设备包括，该过滤器包括：化学物质进料口，其允许含有由于蚀刻所沉积的颗粒的H 3 PO 4溶液进料 基质; 一个允许加入H 2 O的H 2 O加入口; 通过加入H 2 O使热分布不均匀的H 3 PO 4溶液除去颗粒的过滤膜; 以及保护构件，其设置在H 2 O添加口和过滤膜之间，并且保护过滤膜免于通过加入H 2 O引起的H 3 PO 4溶液的撞击。

公开(公告)号：US20050211378A1

公开(公告)日：2005-09-29

申请号：US11076231

申请日：2005-03-10

申请人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

发明人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

IPC分类号： H01L21/306 ,  C23F1/00 ,  H01L21/00 ,  H01L21/311

CPC分类号： H01L21/67086 ,  H01L21/30604 ,  H01L21/31111

摘要： A filter connectable to an external circulating system, the circulating system being included by a substrate treatment apparatus which etches a substrate with an H3PO4 solution, the filter includes: a chemical feeding port which permits feed of H3PO4 solution containing particles deposited due to etching of a substrate; an H2O adding port which permits the addition of H2O; a filter film which removes the particles from the H3PO4 solution whose heat distribution is made ununiform by the addition of H2O; and a protection member which is disposed between the H2O adding port and the filter film and which protects the filter film from bumping of the H3PO4 solution that is causable by the addition of H2O.

摘要翻译： 一种可连接到外部循环系统的过滤器，所述循环系统由用H 3 PO 4溶液蚀刻衬底的衬底处理设备包括，所述过滤器包括： 化学品供给口，其允许由于蚀刻基材而沉积的含有3个/ 3个PO 4的溶液的进料; 允许加入H 2 O的H 2 O 2添加口; 过滤膜，其通过添加H 2 O 2从热分布不均匀的H 3 PO 4 溶液中除去颗粒; 以及保护构件，其设置在H 2 O 2添加口和过滤膜之间，并且保护过滤膜免受H 3 PO 4加成口的冲击， / SUB溶液，其通过加入H 2 O 2可以引起。

公开(公告)号：US07267742B2

公开(公告)日：2007-09-11

申请号：US10922905

申请日：2004-08-23

申请人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

发明人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67253 ,  H01L21/31111 ,  H01L21/67086

摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

摘要翻译： 蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

公开(公告)号：US07985683B2

公开(公告)日：2011-07-26

申请号：US12801178

申请日：2010-05-26

申请人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

发明人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

IPC分类号： H01L21/312

CPC分类号： H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

摘要翻译： 处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面 功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

公开(公告)号：US20100075504A1

公开(公告)日：2010-03-25

申请号：US12574543

申请日：2009-10-06

申请人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

发明人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

IPC分类号： H01L21/306

CPC分类号： H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

摘要翻译： 处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面 功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。