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    Magnetic random access memory
    1.
    发明授权
    Magnetic random access memory 失效
    磁性随机存取存储器

    公开(公告)号：US07209382B2

    公开(公告)日：2007-04-24

    申请号：US11305203

    申请日：2005-12-19

    申请人： Yoshihisa Iwata ,  Kentaro Nakajima

    发明人： Yoshihisa Iwata ,  Kentaro Nakajima

    IPC分类号： G11C11/14 ,  G11C11/15 ,  G11C7/22 ,  G11C7/12 ,  G11C8/18 ,  G11C8/08

    CPC分类号： G11C11/16

    摘要： In a magnetic random access memory (MRAM), setting data which determines the supply/cutoff timing, magnitude, and temporal change (current waveform) of a write word/bit line current is registered in a setting circuit. A write current waveform control circuit generates a write word line drive signal, write word line sink signal, write bit line drive signal, and write bit line sink signal on the basis of the setting data. The current waveform of the write word/bit line current is controlled for each chip or memory cell array.

    摘要翻译： 在磁性随机存取存储器（MRAM）中，将设定数据确定为写入字/位线电流的供给/截止时间，幅度和时间变化（电流波形）。 写入电流波形控制电路根据设定数据生成写字线驱动信号，写字线吸收信号，写位线驱动信号和写位线吸收信号。 对每个芯片或存储单元阵列控制写入字/位线电流的当前波形。

    Magnetic random access memory
    2.
    发明授权
    Magnetic random access memory 失效
    磁性随机存取存储器

    公开(公告)号：US07050325B2

    公开(公告)日：2006-05-23

    申请号：US10438015

    申请日：2003-05-15

    申请人： Yoshihisa Iwata ,  Kentaro Nakajima

    发明人： Yoshihisa Iwata ,  Kentaro Nakajima

    IPC分类号： G11C11/14 ,  G11C11/15 ,  G11C7/00

    CPC分类号： G11C11/16

    摘要： In a magnetic random access memory (MRAM), setting data which determines the supply/cutoff timing, magnitude, and temporal change (current waveform) of a write word/bit line current is registered in a setting circuit. A write current waveform control circuit generates a write word line drive signal, write word line sink signal, write bit line drive signal, and write bit line sink signal on the basis of the setting data. The current waveform of the write word/bit line current is controlled for each chip or memory cell array.

    摘要翻译： 在磁性随机存取存储器（MRAM）中，将设定数据确定为写入字/位线电流的供给/截止时间，幅度和时间变化（电流波形）。 写入电流波形控制电路根据设定数据生成写字线驱动信号，写字线吸收信号，写位线驱动信号和写位线吸收信号。 对每个芯片或存储单元阵列控制写入字/位线电流的当前波形。

    Magnetic random access memory
    3.
    发明申请
    Magnetic random access memory 失效
    磁性随机存取存储器

    公开(公告)号：US20060092692A1

    公开(公告)日：2006-05-04

    申请号：US11305203

    申请日：2005-12-19

    申请人： Yoshihisa Iwata ,  Kentaro Nakajima

    发明人： Yoshihisa Iwata ,  Kentaro Nakajima

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16

    摘要： Setting data which determines the supply/cutoff timing, magnitude, and temporal change (current waveform) of a write word/bit line current is registered in a setting circuit. A write current waveform control circuit generates a write word line drive signal, write word line sink signal, write bit line drive signal, and write bit line sink signal on the basis of the setting data. The current waveform of the write word/bit line current is controlled for each chip or memory cell array.

    摘要翻译： 确定写入字/位线电流的供应/截止时间，幅度和时间变化（电流波形）的设置数据被登记在设置电路中。 写入电流波形控制电路根据设定数据生成写字线驱动信号，写字线吸收信号，写位线驱动信号和写位线吸收信号。 对每个芯片或存储单元阵列控制写入字/位线电流的当前波形。

    Magnetic random access memory
    4.
    发明授权
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：US07376003B2

    公开(公告)日：2008-05-20

    申请号：US10465616

    申请日：2003-06-20

    申请人： Yoshihisa Iwata ,  Yoshiaki Asao ,  Kentaro Nakajima

    发明人： Yoshihisa Iwata ,  Yoshiaki Asao ,  Kentaro Nakajima

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16

    摘要： A magnetic field H1 in the hard-axis direction and a magnetic field H2 in the easy-axis direction are caused to simultaneously act on a MTJ element having an ideal asteroid curve, thereby reversing the magnetizing direction of the storing layer of the MTJ element. When the actual asteroid curve shifts in the hard-axis direction by Ho, a corrected synthesized magnetic field ({right arrow over (H1)}+{right arrow over (H2)}+{right arrow over (Ho)}) is generated in write operation to reliably reverse the magnetizing direction. The corrected synthesized magnetic field can easily be generated by individually controlling a write word/bit line current on the basis of programmed setting data.

    摘要翻译： 使硬轴方向的磁场H 1和易轴方向的磁场H 2同时作用于具有理想的小行星曲线的MTJ元件，从而使MTJ的存储层的磁化方向反转 元件。 当实际的小行星曲线在硬轴方向上移动Ho时，产生校正的合成磁场（{H 1}} + {右箭头（H 2）} +（向右箭头（Ho））上的右箭头 在写入操作中可靠地反转磁化方向，通过基于编程的设置数据单独地控制写入字/位线电流，可以容易地产生校正的合成磁场。

    Semiconductor memory device having memory cells including ferromagnetic films and control method thereof
    5.
    发明授权
    Semiconductor memory device having memory cells including ferromagnetic films and control method thereof 失效
    具有包含铁磁膜的存储单元的半导体存储器件及其控制方法

    公开(公告)号：US07035137B2

    公开(公告)日：2006-04-25

    申请号：US10807454

    申请日：2004-03-24

    申请人： Yoshihisa Iwata ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Yuui Shimizu

    发明人： Yoshihisa Iwata ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Yuui Shimizu

    IPC分类号： G11C11/00 ,  G11C7/04

    CPC分类号： G11C11/15

    摘要： A semiconductor memory device comprises word lines, bit lines, memory cells, a row decoder, a column decoder, and a write circuit. The word lines are formed along a first direction. The bit lines are formed along a second direction. Memory cells include magneto-resistive elements and are arranged at intersections of the word lines and the bit lines. The row decoder selects at least one of the word lines. The column decoder selects at least one of the bit lines. The write circuit supplies first and second write currents to a selected word line and selected bit line respectively and writes data into a selected memory cell arranged at the intersection of the selected word line and the selected bit line. The write circuit changes the current values of the first and second write currents according to a temperature change.

    摘要翻译： 半导体存储器件包括字线，位线，存储单元，行解码器，列解码器和写电路。 字线沿着第一方向形成。 位线沿着第二方向形成。 存储单元包括磁阻元件，并且布置在字线和位线的交点处。 行解码器选择至少一个字线。 列解码器选择至少一个位线。 写入电路分别向所选择的字线和所选位线提供第一和第二写入电流，并将数据写入布置在所选择的字线和所选位线的交点处的选定存储单元。 写入电路根据温度变化改变第一和第二写入电流的电流值。

    Semiconductor memory device having memory cells including ferromagnetic films and control method thereof
    6.
    发明申请
    Semiconductor memory device having memory cells including ferromagnetic films and control method thereof 失效
    具有包含铁磁膜的存储单元的半导体存储器件及其控制方法

    公开(公告)号：US20050036362A1

    公开(公告)日：2005-02-17

    申请号：US10807454

    申请日：2004-03-24

    申请人： Yoshihisa Iwata ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Yuui Shimizu

    发明人： Yoshihisa Iwata ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Yuui Shimizu

    IPC分类号： G11C11/15 ,  G11C29/04 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/00

    CPC分类号： G11C11/15

    摘要： A semiconductor memory device comprises word lines, bit lines, memory cells, a row decoder, a column decoder, and a write circuit. The word lines are formed along a first direction. The bit lines are formed along a second direction. Memory cells include magneto-resistive elements and are arranged at intersections of the word lines and the bit lines. The row decoder selects at least one of the word lines. The column decoder selects at least one of the bit lines. The write circuit supplies first and second write currents to a selected word line and selected bit line respectively and writes data into a selected memory cell arranged at the intersection of the selected word line and the selected bit line. The write circuit changes the current values of the first and second write currents according to a temperature change.

    摘要翻译： 半导体存储器件包括字线，位线，存储单元，行解码器，列解码器和写电路。 字线沿着第一方向形成。 位线沿着第二方向形成。 存储单元包括磁阻元件，并且布置在字线和位线的交点处。 行解码器选择至少一个字线。 列解码器选择至少一个位线。 写入电路分别向所选择的字线和所选位线提供第一和第二写入电流，并将数据写入布置在所选择的字线和所选位线的交点处的选定存储单元。 写入电路根据温度变化改变第一和第二写入电流的电流值。

    Magnetic memory device and method of manufacturing the same
    7.
    发明授权
    Magnetic memory device and method of manufacturing the same 有权
    磁记忆体装置及其制造方法

    公开(公告)号：US07291506B2

    公开(公告)日：2007-11-06

    申请号：US11171323

    申请日：2005-07-01

    申请人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

    发明人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

    IPC分类号： H01L21/00

    CPC分类号： C23F4/00 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F41/308 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

    摘要翻译： 一种制造磁存储器件的方法包括在衬底上形成绝缘层，在绝缘层上形成下电极，在下电极的上表面上形成磁阻膜，该磁阻膜包括绝缘屏障 层和层叠在绝缘阻挡层的两侧的多个磁性膜，使用掩模层作为掩模将掩模层堆叠在磁阻膜上，对磁阻膜进行离子蚀刻，从而形成磁 电阻元件，在掩模的上表面，磁阻元件和下电极上形成绝缘膜，并用离子束蚀刻绝缘膜，使得磁阻元件的侧表面露出。