公开(公告)号：US20080224271A1

公开(公告)日：2008-09-18

申请号：US11722702

申请日：2005-12-21

申请人： Yoshimichi Sogawa ,  Takao Yamazaki ,  Ichirou Hazeyama ,  Sakae Kitajou ,  Nobuaki Takahashi

发明人： Yoshimichi Sogawa ,  Takao Yamazaki ,  Ichirou Hazeyama ,  Sakae Kitajou ,  Nobuaki Takahashi

IPC分类号： H01L23/48 ,  H05K1/00 ,  H05K3/42 ,  H01L21/4763

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L23/3171 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/0557 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/1433 ,  H01L2924/19041 ,  Y10T29/49165 ,  H01L2924/013 ,  H01L2924/00014

摘要： Passivation films 3a, 3b are formed to cover both surfaces of semiconductor substrate 1 which comprises terminal pads 2a, 2b on both surfaces. Openings 3c, 3d are provided at positions on passivation films 3a, 3b which match with terminal pads 2a, 2b. Throughholes 9 are formed inside of openings 3c, 3d to extend through terminal pad 2a, semiconductor substrate 1, and terminal pad 2b. Insulating layer 4 made of SiO2, SiN, SiO, or the like is formed on the inner surfaces of throughholes 9. Buffer layer 5 made of a conductive adhesive is formed to cover insulating layer 4 and terminal pads 2a, 2b in openings 3c, 3d. Further, conductive layer 6 made of a metal film is formed on buffer layer 5 by electrolytic plating, non-electrolytic plating, or the like.

摘要翻译： 钝化膜3a，3b形成为覆盖包括两个表面上的端子焊盘2a，2b的半导体衬底1的两个表面。 在与端子焊盘2a，2b配合的钝化膜3a，3b上的位置设置开口3c，3d。 通孔9形成在开口3c，3d的内部，以延伸通过端子焊盘2a，半导体衬底1和端子焊盘2b。 在通孔9的内表面上形成由SiO 2，SiN，SiO等构成的绝缘层4。 形成由导电粘合剂制成的缓冲层5以覆盖开口3c，3d中的绝缘层4和端子焊盘2a，2b。 此外，通过电解电镀，非电解电镀等在缓冲层5上形成由金属膜制成的导电层6。