Magnetic levitating transporting apparatus with a movable magnetic unit
    1.
    发明授权
    Magnetic levitating transporting apparatus with a movable magnetic unit 失效
    具有可动磁单元的磁悬浮输送装置

    公开(公告)号:US5360470A

    公开(公告)日:1994-11-01

    申请号:US183316

    申请日:1994-01-19

    摘要: A magnetic levitating transportation apparatus comprising a rail and a vehicle capable of travelling along the rails by a linear motor and caused to magnetically levitate by magnet units including permanent magnets and electro-magnets. The gap between the rail and each of the magnetic units is controlled by controlling the current supplied to the magnet units so that the current is substantially zero when the vehicle is in the levitated condition. One of the magnet units is movably mounted to the vehicle and moved by the piezoelectric actuator so that the gap between this magnet unit and the rail can be adjusted. The controller controls the piezoelectric actuator based on the current supplied to the magnet units.

    摘要翻译: 一种磁悬浮运输装置,包括轨道和车辆,其能够通过线性电动机沿着轨道行进并且由包括永磁体和电磁体的磁体单元磁悬浮。 轨道和每个磁性单元之间的间隙通过控制提供给磁体单元的电流来控制,使得当车辆处于悬浮状态时,电流基本为零。 其中一个磁体单元可移动地安装在车辆上并被压电致动器移动,从而可以调整该磁体单元与轨道之间的间隙。 控制器基于提供给磁体单元的电流来控制压电致动器。

    Magnetic levitating transportation apparatus with rail gap sensor and
non-parallel magnet unit arrangement
    2.
    发明授权
    Magnetic levitating transportation apparatus with rail gap sensor and non-parallel magnet unit arrangement 失效
    具有轨间隔传感器和非平行磁体单元布置的磁悬浮运输装置

    公开(公告)号:US5377596A

    公开(公告)日:1995-01-03

    申请号:US86033

    申请日:1993-07-06

    摘要: A magnetic levitating transportation apparatus including rails and a vehicle capable of travelling along the rails by a linear motor and caused to magnetically levitate by magnet units with electro-magnets. The gap is controlled by controlling the current supplied to the magnet units in response to gap sensors. The rails include rail gaps where the ends of two rail elements abut, and rail gap sensors are arranged to detect the rail gap. Thus, current supplied to one of the magnet units is disabled when the rail gap is detected, and the current to be supplied to the associated magnet unit is stopped. The current to be supplied to the associated magnet unit is determined from the outputs of the remaining gap sensors.

    摘要翻译: 一种磁悬浮输送装置,包括轨道和车辆,其能够通过线性电动机沿着轨道行进并且由具有电磁体的磁体单元磁悬浮。 通过响应于间隙传感器控制提供给磁体单元的电流来控制间隙。 轨道包括轨道间隙,其中两个轨道元件的端部邻接,轨道间隙传感器被布置成检测轨道间隙。 因此,当检测到轨道间隙时,提供给一个磁体单元的电流被禁用,并且停止提供给相关联的磁体单元的电流。 根据剩余间隙传感器的输出确定要提供给相关磁体单元的电流。

    Delivery apparatus
    3.
    发明授权
    Delivery apparatus 失效
    送货装置

    公开(公告)号:US4685551A

    公开(公告)日:1987-08-11

    申请号:US767466

    申请日:1985-08-20

    CPC分类号: B65G47/22 Y10S414/135

    摘要: An apparatus for delivering an article, in which the delivery passage per se must be moved, comprises a pair of delivery belts substantially parallel to each other and supporting members for supporting the delivery belts, a mechanism for turning the paired delivery belts with the ends of the supporting members acting as the centers of turning so that the paired delivery belts are separated from each other from the substantially parallel position.

    摘要翻译: 用于输送输送通道本身必须移动的物品的装置包括一对基本上彼此平行的输送带和用于支撑输送带的支撑构件,用于使成对的输送带转动的机构, 支撑构件用作转动中心,使得成对的传送带从大致平行的位置彼此分离。

    Group III nitride semiconductor light emitting device and method for producing the same
    5.
    发明授权
    Group III nitride semiconductor light emitting device and method for producing the same 有权
    III族氮化物半导体发光器件及其制造方法

    公开(公告)号:US08097891B2

    公开(公告)日:2012-01-17

    申请号:US12223986

    申请日:2007-02-13

    IPC分类号: H01L33/00

    摘要: The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1), (b1) and (c1) in this order: (a1) an N electrode, (b1) a semiconductor multi-layer film, (c1) a transparent electric conductive oxide P electrode, wherein the semiconductor multi-layer film comprises an N-type semiconductor layer, light emitting layer, P-type semiconductor layer and high concentration N-type semiconductor layer having an n-type impurity concentration of 5×1018 cm−3 to 5×1020 cm−3 in this order, the N-type semiconductor layer is in contact with the N electrode, and the semiconductor multi-layer film has a convex.

    摘要翻译: 本发明提供一种III族氮化物半导体发光器件及其制造方法。 III族氮化物半导体发光元件依次包括(a1),(b1)和(c1):(a1)N电极,(b1)半导体多层膜,(c1)透明导电氧化物P 电极,其中所述半导体多层膜包括N型半导体层,发光层,P型半导体层和n型杂质浓度为5×10 18 cm -3〜5的高浓度N型半导体层 ×1020cm-3,N型半导体层与N电极接触,半导体多层膜具有凸面。

    GaN based luminescent device on a metal substrate
    6.
    发明授权
    GaN based luminescent device on a metal substrate 有权
    GaN基发光器件在金属衬底上

    公开(公告)号:US07897993B2

    公开(公告)日:2011-03-01

    申请号:US11661266

    申请日:2005-08-30

    IPC分类号: H01L33/00

    CPC分类号: H01L33/32 H01L33/007

    摘要: A compound semiconductor luminescent device characterized by comprising an electroconductive substrate, a compound semiconductor function layer including a GaN layer, an electrode, an adhesiveness-enhancing layer, and a bonding layer, which are stacked in this order wherein the above-described electroconductive substrate includes a metal material that indicates a thermal expansion coefficient different by 1.5×10−6/° C. or less from GaN.

    摘要翻译: 一种化合物半导体发光装置,其特征在于,包括导电性基板,包含GaN层的化合物半导体功能层,电极,粘合性增强层和接合层,其中,上述导电性基板包括 表示与GaN不同的热膨胀系数为1.5×10 -6 /℃以下的金属材料。

    Group III Nitride Semiconductor Light Emitting Device and Method for Producing the Same
    7.
    发明申请
    Group III Nitride Semiconductor Light Emitting Device and Method for Producing the Same 有权
    第III族氮化物半导体发光装置及其制造方法

    公开(公告)号:US20100155754A1

    公开(公告)日:2010-06-24

    申请号:US12223986

    申请日:2007-02-13

    IPC分类号: H01L33/58 H01L21/30

    摘要: The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1), (b1) and (c1) in this order: (a1) an N electrode, (b1) a semiconductor multi-layer film, (c1) a transparent electric conductive oxide P electrode, wherein the semiconductor multi-layer film comprises an N-type semiconductor layer, light emitting layer, P-type semiconductor layer and high concentration N-type semiconductor layer having an n-type impurity concentration of 5×1018 cm−3 to 5×1020 cm−3 in this order, the N-type semiconductor layer is in contact with the N electrode, and the semiconductor multi-layer film has a convex.

    摘要翻译: 本发明提供一种III族氮化物半导体发光器件及其制造方法。 III族氮化物半导体发光元件依次包括(a1),(b1)和(c1):(a1)N电极,(b1)半导体多层膜,(c1)透明导电氧化物P 电极,其中所述半导体多层膜包括N型半导体层,发光层,P型半导体层和n型杂质浓度为5×10 18 cm -3〜5的高浓度N型半导体层 ×1020cm-3,N型半导体层与N电极接触,半导体多层膜具有凸面。

    Method for Fine Processing of Substrate, Method for Fabrication of Substrate, and Light Emitting Device
    9.
    发明申请
    Method for Fine Processing of Substrate, Method for Fabrication of Substrate, and Light Emitting Device 有权
    基板精加工方法,基板加工方法及发光装置

    公开(公告)号:US20090114944A1

    公开(公告)日:2009-05-07

    申请号:US12294963

    申请日:2007-03-30

    IPC分类号: H01L33/00 B44C1/22 H01L21/306

    摘要: The present invention provides a method for fine processing of a substrate, a method for fabrication of a substrate, and a light emitting device. In the method for fine processing of a substrate, after removing a single particle layer from the substrate having the single particle layer, a hole having an inner diameter smaller than a diameter of a particle and centering on a position on the substrate where each particle constructing the single particle layer has been placed is formed by etching. The method for fabrication of a substrateincludesthefollowingsteps (I) to (V) inthisorder: (I) forming the single particle layer by arranging the particles on the substrate; (II) reducing the diameter of each of the particles by etching the obtained substrate; (III) forming a thin film composed of a mask material on the obtained substrate; (IV) removing the particle from the substrate and forming a mask having a hole with an inner diameter equivalent to the diameter of the particle at the position where the individual particle has existed; and (V) forming a hole with a diameter equivalent to the inner diameter of the hole of the mask on the substrate below the hole of the mask by etching the substrate using the mask. The light emitting device is made of a nitride semiconductor and is formed with a fine hole on an entire surface or a partial region of a light extraction surface and/or an opposing surface.

    摘要翻译: 本发明提供了一种基板的精细加工方法,基板的制造方法以及发光装置。 在基板精细加工方法中,在从具有单一颗粒层的基板除去单个颗粒层之后,具有内径小于颗粒直径的孔并且以基体上的每个颗粒构成的位置为中心 已经放置的单个颗粒层通过蚀刻形成。 本发明的制造方法包括以下步骤(I)至(V):(I)通过将颗粒布置在基材上形成单个颗粒层; (II)通过蚀刻所获得的基板来减小每个颗粒的直径; (III)在所得基板上形成由掩模材料构成的薄膜; (IV)从基板上除去粒子,形成具有与粒子的存在直径相当的粒径的孔的掩模, 以及(V)通过使用掩模蚀刻基板,在掩模的孔下面的基板上形成具有与掩模的孔的内径相当的直径的孔。 发光器件由氮化物半导体制成,并且在光提取表面和/或相对表面的整个表面或部分区域上形成有细孔。

    Gan Based Luminescent Device on a Metal Substrate
    10.
    发明申请
    Gan Based Luminescent Device on a Metal Substrate 有权
    甘基发光器件在金属基板上

    公开(公告)号:US20070295984A1

    公开(公告)日:2007-12-27

    申请号:US11661266

    申请日:2005-08-30

    IPC分类号: H01L33/00

    CPC分类号: H01L33/32 H01L33/007

    摘要: A compound semiconductor luminescent device characterized by comprising: an electroconductive substrate; a compound semiconductor function layer including a GaN layer; an electrode; an adhesiveness-enhancing layer; and a bonding layer, which are stacked in this order, wherein the above-described electroconductive substrate includes a metal material that indicates a thermal expansion coefficient different by 1.5×10−6/° C. or less from GaN.

    摘要翻译: 一种化合物半导体发光装置,其特征在于,包括:导电性基板; 包括GaN层的化合物半导体功能层; 电极 粘合性增强层; 和接合层,其中,上述导电性基板包括表示与GaN不同的热膨胀系数为1.5×10 -6 /℃以下的金属材料 。