摘要:
A magnetic levitating transportation apparatus comprising a rail and a vehicle capable of travelling along the rails by a linear motor and caused to magnetically levitate by magnet units including permanent magnets and electro-magnets. The gap between the rail and each of the magnetic units is controlled by controlling the current supplied to the magnet units so that the current is substantially zero when the vehicle is in the levitated condition. One of the magnet units is movably mounted to the vehicle and moved by the piezoelectric actuator so that the gap between this magnet unit and the rail can be adjusted. The controller controls the piezoelectric actuator based on the current supplied to the magnet units.
摘要:
A magnetic levitating transportation apparatus including rails and a vehicle capable of travelling along the rails by a linear motor and caused to magnetically levitate by magnet units with electro-magnets. The gap is controlled by controlling the current supplied to the magnet units in response to gap sensors. The rails include rail gaps where the ends of two rail elements abut, and rail gap sensors are arranged to detect the rail gap. Thus, current supplied to one of the magnet units is disabled when the rail gap is detected, and the current to be supplied to the associated magnet unit is stopped. The current to be supplied to the associated magnet unit is determined from the outputs of the remaining gap sensors.
摘要:
An apparatus for delivering an article, in which the delivery passage per se must be moved, comprises a pair of delivery belts substantially parallel to each other and supporting members for supporting the delivery belts, a mechanism for turning the paired delivery belts with the ends of the supporting members acting as the centers of turning so that the paired delivery belts are separated from each other from the substantially parallel position.
摘要:
An object of the invention is to provide an organic electroluminescence (EL) element formed using a relatively stable new electron injection material in an atmosphere of approximately ordinary pressure. An organic EL element of a preferable embodiment is an organic EL element including a supporting substrate, an anode, a light-emitting layer, an electron injection layer, and a cathode in this order, in which the electron injection layer is formed by applying an ink including an ionic polymer so as to form a film, and the cathode is formed by applying an ink including a material which forms the cathode so as to form a film or transferring a conductive thin film which forms the cathode.
摘要:
The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1), (b1) and (c1) in this order: (a1) an N electrode, (b1) a semiconductor multi-layer film, (c1) a transparent electric conductive oxide P electrode, wherein the semiconductor multi-layer film comprises an N-type semiconductor layer, light emitting layer, P-type semiconductor layer and high concentration N-type semiconductor layer having an n-type impurity concentration of 5×1018 cm−3 to 5×1020 cm−3 in this order, the N-type semiconductor layer is in contact with the N electrode, and the semiconductor multi-layer film has a convex.
摘要翻译:本发明提供一种III族氮化物半导体发光器件及其制造方法。 III族氮化物半导体发光元件依次包括(a1),(b1)和(c1):(a1)N电极,(b1)半导体多层膜,(c1)透明导电氧化物P 电极,其中所述半导体多层膜包括N型半导体层,发光层,P型半导体层和n型杂质浓度为5×10 18 cm -3〜5的高浓度N型半导体层 ×1020cm-3,N型半导体层与N电极接触,半导体多层膜具有凸面。
摘要:
A compound semiconductor luminescent device characterized by comprising an electroconductive substrate, a compound semiconductor function layer including a GaN layer, an electrode, an adhesiveness-enhancing layer, and a bonding layer, which are stacked in this order wherein the above-described electroconductive substrate includes a metal material that indicates a thermal expansion coefficient different by 1.5×10−6/° C. or less from GaN.
摘要:
The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1), (b1) and (c1) in this order: (a1) an N electrode, (b1) a semiconductor multi-layer film, (c1) a transparent electric conductive oxide P electrode, wherein the semiconductor multi-layer film comprises an N-type semiconductor layer, light emitting layer, P-type semiconductor layer and high concentration N-type semiconductor layer having an n-type impurity concentration of 5×1018 cm−3 to 5×1020 cm−3 in this order, the N-type semiconductor layer is in contact with the N electrode, and the semiconductor multi-layer film has a convex.
摘要翻译:本发明提供一种III族氮化物半导体发光器件及其制造方法。 III族氮化物半导体发光元件依次包括(a1),(b1)和(c1):(a1)N电极,(b1)半导体多层膜,(c1)透明导电氧化物P 电极,其中所述半导体多层膜包括N型半导体层,发光层,P型半导体层和n型杂质浓度为5×10 18 cm -3〜5的高浓度N型半导体层 ×1020cm-3,N型半导体层与N电极接触,半导体多层膜具有凸面。
摘要:
A pain sensory nerve stimulation apparatus includes: an electrode portion including: a first electrode, a tip end of which is adapted to be inserted into a skin; and at lease one second electrode which is disposed in a circumference of the first electrode without being electrically conductive with the first electrode, and which is adapted to be in contact with a skin; and a pulse signal supplier, supplying a pulse signal in which an electrical polarity of the first electrode is set as a anode and an electrical polarity of the second electrode is set as a cathode.
摘要:
The present invention provides a method for fine processing of a substrate, a method for fabrication of a substrate, and a light emitting device. In the method for fine processing of a substrate, after removing a single particle layer from the substrate having the single particle layer, a hole having an inner diameter smaller than a diameter of a particle and centering on a position on the substrate where each particle constructing the single particle layer has been placed is formed by etching. The method for fabrication of a substrateincludesthefollowingsteps (I) to (V) inthisorder: (I) forming the single particle layer by arranging the particles on the substrate; (II) reducing the diameter of each of the particles by etching the obtained substrate; (III) forming a thin film composed of a mask material on the obtained substrate; (IV) removing the particle from the substrate and forming a mask having a hole with an inner diameter equivalent to the diameter of the particle at the position where the individual particle has existed; and (V) forming a hole with a diameter equivalent to the inner diameter of the hole of the mask on the substrate below the hole of the mask by etching the substrate using the mask. The light emitting device is made of a nitride semiconductor and is formed with a fine hole on an entire surface or a partial region of a light extraction surface and/or an opposing surface.
摘要:
A compound semiconductor luminescent device characterized by comprising: an electroconductive substrate; a compound semiconductor function layer including a GaN layer; an electrode; an adhesiveness-enhancing layer; and a bonding layer, which are stacked in this order, wherein the above-described electroconductive substrate includes a metal material that indicates a thermal expansion coefficient different by 1.5×10−6/° C. or less from GaN.