公开(公告)号：US20080173912A1

公开(公告)日：2008-07-24

申请号：US11941291

申请日：2007-11-16

申请人： Yoshinori KUMURA ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

发明人： Yoshinori KUMURA ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

IPC分类号： H01L29/00

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device comprising a ferroelectric capacitor having improved reliability is disclosed. According to one aspect of the present invention, it is provided a semiconductor device comprising a transistor formed on a semiconductor substrate, a ferroelectric capacitor formed above the transistor and comprising a lower electrode, a ferroelectric film and an upper electrode, a first hydrogen barrier film formed over the ferroelectric capacitor, an insulator formed over the first hydrogen barrier film, a contact plug disposed in the insulator and electrically connected with the upper electrode, a second hydrogen barrier film disposed between the contact plug and the insulator continuously, and a wiring connected with the contact plug.

摘要翻译： 公开了一种包括具有改善的可靠性的铁电电容器的半导体器件。 根据本发明的一个方面，提供了一种半导体器件，包括形成在半导体衬底上的晶体管，形成在晶体管上方的铁电电容器，包括下电极，铁电体膜和上电极，第一氢阻挡膜 形成在所述铁电电容器上，形成在所述第一氢阻挡膜上的绝缘体，设置在所述绝缘体中并与所述上电极电连接的接触插塞，连续地配置在所述接触插塞和所述绝缘体之间的第二氢阻挡膜， 与接触插头。

公开(公告)号：US07348617B2

公开(公告)日：2008-03-25

申请号：US11288204

申请日：2005-11-29

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

IPC分类号： H01L29/94

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device comprising a ferroelectric capacitor having improved reliability is disclosed. According to one aspect of the present invention, it is provided a semiconductor device comprising a transistor formed on a semiconductor substrate, a ferroelectric capacitor formed above the transistor and comprising a lower electrode, a ferroelectric film and an upper electrode, a first hydrogen barrier film formed over the ferroelectric capacitor, an insulator formed over the first hydrogen barrier film, a contact plug disposed in the insulator and electrically connected with the upper electrode, a second hydrogen barrier film disposed between the contact plug and the insulator continuously, and a wiring connected with the contact plug.

摘要翻译： 公开了一种包括具有改善的可靠性的铁电电容器的半导体器件。 根据本发明的一个方面，提供了一种半导体器件，包括形成在半导体衬底上的晶体管，形成在晶体管上方的铁电电容器，包括下电极，铁电体膜和上电极，第一氢阻挡膜 形成在所述铁电电容器上，形成在所述第一氢阻挡膜上的绝缘体，设置在所述绝缘体中并与所述上电极电连接的接触插塞，连续地配置在所述接触插塞和所述绝缘体之间的第二氢阻挡膜， 与接触插头。

公开(公告)号：US20070045687A1

公开(公告)日：2007-03-01

申请号：US11288204

申请日：2005-11-29

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

IPC分类号： H01L29/94 ,  H01L29/76 ,  H01L31/00

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device comprising a ferroelectric capacitor having improved reliability is disclosed. According to one aspect of the present invention, it is provided a semiconductor device comprising a transistor formed on a semiconductor substrate, a ferroelectric capacitor formed above the transistor and comprising a lower electrode, a ferroelectric film and an upper electrode, a first hydrogen barrier film formed over the ferroelectric capacitor, an insulator formed over the first hydrogen barrier film, a contact plug disposed in the insulator and electrically connected with the upper electrode, a second hydrogen barrier film disposed between the contact plug and the insulator continuously, and a wiring connected with the contact plug.

摘要翻译： 公开了一种包括具有改善的可靠性的铁电电容器的半导体器件。 根据本发明的一个方面，提供了一种半导体器件，包括形成在半导体衬底上的晶体管，形成在晶体管上方的铁电电容器，包括下电极，铁电体膜和上电极，第一氢阻挡膜 形成在所述铁电电容器上，形成在所述第一氢阻挡膜上的绝缘体，设置在所述绝缘体中并与所述上电极电连接的接触插塞，连续地配置在所述接触插塞和所述绝缘体之间的第二氢阻挡膜， 与接触插头。

公开(公告)号：US20060002170A1

公开(公告)日：2006-01-05

申请号：US10931193

申请日：2004-09-01

申请人： Yoshinori Kumura ,  Yoshiro Shimojo ,  Iwao Kunishima ,  Tohru Ozaki

发明人： Yoshinori Kumura ,  Yoshiro Shimojo ,  Iwao Kunishima ,  Tohru Ozaki

IPC分类号： G11C11/22

CPC分类号： G11C11/22 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor storage device wherein a plurality of ferroelectric capacitors are sufficiently covered with a hydrogen barrier film formed thereon comprises a field effect transistor formed on one surface side of a semiconductor substrate, a plurality of ferroelectric capacitors formed close to each other above the field effect transistor, an insulting film configured to cover the plurality of ferroelectric capacitors and planarised a space between adjacent ferroelectric capacitors in a self-aligned manner during formation thereof, and a hydrogen barrier film formed on the insulating film.

公开(公告)号：US07612398B2

公开(公告)日：2009-11-03

申请号：US10931193

申请日：2004-09-01

申请人： Yoshinori Kumura ,  Yoshiro Shimojo ,  Iwao Kunishima ,  Tohru Ozaki

发明人： Yoshinori Kumura ,  Yoshiro Shimojo ,  Iwao Kunishima ,  Tohru Ozaki

IPC分类号： H01L21/02

CPC分类号： G11C11/22 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor storage device wherein a plurality of ferroelectric capacitors are sufficiently covered with a hydrogen barrier film formed thereon comprises a field effect transistor formed on one surface side of a semiconductor substrate, a plurality of ferroelectric capacitors formed close to each other above the field effect transistor, an insulting film configured to cover the plurality of ferroelectric capacitors and planarised a space between adjacent ferroelectric capacitors in a self-aligned manner during formation thereof, and a hydrogen barrier film formed on the insulating film.

摘要翻译： 一种半导体存储装置，其中多个强电介质电容器被形成在其上的氢阻挡膜充分覆盖，其包括形成在半导体衬底的一个表面侧的场效应晶体管，在场效应晶体管之上彼此靠近地形成的多个铁电电容器 被配置为覆盖多个铁电电容器的绝缘膜，并且在其形成期间以自对准的方式平铺相邻的铁电电容器之间的空间，以及形成在绝缘膜上的氢阻挡膜。

公开(公告)号：US06972990B2

公开(公告)日：2005-12-06

申请号：US10858441

申请日：2004-06-02

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Hiroyuki Kanaya ,  Iwao Kunishima ,  Yoshiro Shimojo

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Hiroyuki Kanaya ,  Iwao Kunishima ,  Yoshiro Shimojo

IPC分类号： H01L27/10 ,  G11C11/14 ,  G11C11/22 ,  H01L21/8246 ,  H01L27/105

CPC分类号： G11C11/22 ,  H01L27/105 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/57

摘要： A ferro-electric memory device includes a gate electrode which is formed on a semiconductor substrate, first and second diffusion layers which are formed in the semiconductor substrate, a first contact which is electrically connected to the first diffusion layer, a first oxygen barrier film having insulating properties, which is formed on the first contact, a second contact which is electrically connected to the first contact, a second oxygen barrier film having insulating properties, which is formed on the second contact, a ferro-electric capacitor which has a lower electrode, a ferro-electric film, and an upper electrode, a third contact which is electrically connected to the upper electrode, a first interconnection which is electrically connected to the second and third contacts, and a third oxygen barrier film having insulating properties, which is arranged between the ferro-electric capacitor and the second contact and brought into contact with the first oxygen barrier film.

摘要翻译： 铁电存储器件包括形成在半导体衬底上的栅电极，形成在半导体衬底中的第一和第二扩散层，与第一扩散层电连接的第一触点，具有第一氧阻隔膜， 绝缘性能，其形成在第一接触件上，与第一接触件电连接的第二接触件，形成在第二接触件上的具有绝缘性能的第二氧阻隔膜，具有下电极的铁电电容器 铁电膜和上电极，与上电极电连接的第三触点，与第二触头和第三触头电连接的第一互连件，以及具有绝缘性能的第三隔氧膜，其为 布置在铁电电容器和第二触点之间并与第一氧阻隔膜接触。

公开(公告)号：US20050207202A1

公开(公告)日：2005-09-22

申请号：US10858441

申请日：2004-06-02

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Hiroyuki Kanaya ,  Iwao Kunishima ,  Yoshiro Shimojo

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Hiroyuki Kanaya ,  Iwao Kunishima ,  Yoshiro Shimojo

IPC分类号： H01L27/10 ,  G11C11/14 ,  G11C11/22 ,  H01L21/8246 ,  H01L27/105

CPC分类号： G11C11/22 ,  H01L27/105 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/57

摘要： A ferro-electric memory device includes a gate electrode which is formed on a semiconductor substrate, first and second diffusion layers which are formed in the semiconductor substrate, a first contact which is electrically connected to the first diffusion layer, a first oxygen barrier film having insulating properties, which is formed on the first contact, a second contact which is electrically connected to the first contact, a second oxygen barrier film having insulating properties, which is formed on the second contact, a ferro-electric capacitor which has a lower electrode, a ferro-electric film, and an upper electrode, a third contact which is electrically connected to the upper electrode, a first interconnection which is electrically connected to the second and third contacts, and a third oxygen barrier film having insulating properties, which is arranged between the ferro-electric capacitor and the second contact and brought into contact with the first oxygen barrier film.

摘要翻译： 铁电存储器件包括形成在半导体衬底上的栅电极，形成在半导体衬底中的第一和第二扩散层，与第一扩散层电连接的第一触点，具有第一氧阻隔膜， 绝缘性能，其形成在第一接触件上，与第一接触件电连接的第二接触件，形成在第二接触件上的具有绝缘性能的第二氧阻隔膜，具有下电极的铁电电容器 铁电膜和上电极，与上电极电连接的第三触点，与第二触头和第三触头电连接的第一互连件，以及具有绝缘性能的第三隔氧膜，其为 布置在铁电电容器和第二触点之间并与第一氧阻隔膜接触。

公开(公告)号：US20080135901A1

公开(公告)日：2008-06-12

申请号：US11939955

申请日：2007-11-14

申请人： Yoshiro SHIMOJO ,  Susumu Shuto ,  Iwao Kunishima ,  Tohru Ozaki

发明人： Yoshiro SHIMOJO ,  Susumu Shuto ,  Iwao Kunishima ,  Tohru Ozaki

IPC分类号： H01L29/76 ,  H01L21/8246

CPC分类号： H01L27/11502 ,  H01L21/76816 ,  H01L21/76895 ,  H01L21/76897 ,  H01L27/11507

摘要： A semiconductor memory, comprising: a first memory cell transistor disposed on a semiconductor substrate; a second memory cell transistor disposed on the semiconductor substrate and having a first source-drain region in common with the first memory cell transistor; a first ferroelectric capacitor disposed with a via in between above a second source-drain region of the first memory cell transistor; a second ferroelectric capacitor disposed with a via in between above a second source-drain region of the second memory cell transistor; an interlayer dielectric disposed on the semiconductor substrate, as coating the memory cell transistors and the ferroelectric capacitors, the interlayer dielectric having a contact hole through which the first source-drain region is partially exposed at the bottom and upper electrodes of the first and second ferroelectric capacitors are partially exposed at the top; and a wiring layer filled into the contact hole, which connects the first source-drain region, the upper electrode of the first ferroelectric capacitor, and the second ferroelectric capacitor.

摘要翻译： 一种半导体存储器，包括：设置在半导体衬底上的第一存储单元晶体管; 第二存储单元晶体管，设置在半导体衬底上并且具有与第一存储单元晶体管共同的第一源 - 漏区; 第一铁电电容器，其设置有在第一存储单元晶体管的第二源 - 漏区之间的通孔; 第二铁电电容器，设置有在第二存储单元晶体管的第二源极 - 漏极区之间的通孔; 设置在半导体衬底上的层间电介质，作为涂覆存储单元晶体管和铁电电容器，层间电介质具有接触孔，第一源极 - 漏极区域在第一和第二铁电体的底部被部分暴露，上部电极 电容器部分暴露在顶部; 以及将第一源极 - 漏极区域，第一铁电体电容器的上部电极和第二铁电电容器连接的接触孔中填充的布线层。

公开(公告)号：US20060022241A1

公开(公告)日：2006-02-02

申请号：US10958468

申请日：2004-10-06

申请人： Yoshiro Shimojo ,  Yoshinori Kumura ,  Iwao Kunishima

发明人： Yoshiro Shimojo ,  Yoshinori Kumura ,  Iwao Kunishima

IPC分类号： H01L29/94 ,  H01L21/8242

CPC分类号： G06K13/0875 ,  G06K7/0043 ,  G06K13/06 ,  G06K13/0887 ,  G06K13/0893 ,  H01L21/76831 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/5223 ,  H01L27/10808 ,  H01L27/10888 ,  H01L27/11507 ,  H01L2924/0002 ,  H01L2924/00

摘要： A transistor is formed in a surface region of a semiconductor substrate. A capacitor is formed above the transistor, and has a first electrode, a second electrode, and a dielectric film formed between the first and second electrodes. A first contact is formed on a side surface portion of the capacitor so as to be close to at least a portion of the capacitor, and connected to one of source/drain regions. A side insulating film is formed, in contact with at least the capacitor, on the sidewalls of the first contact.

摘要翻译： 晶体管形成在半导体衬底的表面区域中。 在晶体管的上方形成电容器，并具有形成在第一和第二电极之间的第一电极，第二电极和电介质膜。 第一触点形成在电容器的侧表面部分上，以便接近电容器的至少一部分，并且连接到源/漏区之一。 在第一触点的侧壁上形成与至少电容器接触的侧绝缘膜。

公开(公告)号：US07573084B2

公开(公告)日：2009-08-11

申请号：US11898949

申请日：2007-09-18

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

IPC分类号： H01L27/108

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57

摘要： According to an aspect of the present invention, there is provided a non-volatile semiconductor memory device, including a ferroelectric capacitor being stacked a first electrode, a ferroelectric film and a second electrode in order, a first protective film with hydrogen barrier performance, the first protective film being formed under the first electrode and on a side-wall of the ferroelectric capacitor, the first protective film being widened from the second electrode towards the first electrode, a second protective film with hydrogen barrier performance, the second protective film being formed over the second electrode and on the first protective film formed on the side-wall of the ferroelectric capacitor, the second protective film being widened from the first electrode towards the second electrode, a cell transistor, a source of the cell transistor being connected to the first electrode, a drain of the cell transistor being connected to a bit line and a gate being connected to a word line.

摘要翻译： 根据本发明的一个方面，提供了一种非易失性半导体存储器件，包括堆叠第一电极，铁电体膜和第二电极的铁电电容器，具有氢阻挡性能的第一保护膜， 第一保护膜形成在第一电极下方和铁电电容器的侧壁上，第一保护膜从第二电极朝向第一电极加宽，具有氢阻挡性能的第二保护膜，形成第二保护膜 在第二电极上以及形成在铁电电容器的侧壁上的第一保护膜上，第二保护膜从第一电极朝向第二电极加宽，单元晶体管，单元晶体管的源极连接到 第一电极，单元晶体管的漏极连接到位线，栅极连接到aw ord行。