公开(公告)号：US20080173912A1

公开(公告)日：2008-07-24

申请号：US11941291

申请日：2007-11-16

申请人： Yoshinori KUMURA ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

发明人： Yoshinori KUMURA ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

IPC分类号： H01L29/00

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device comprising a ferroelectric capacitor having improved reliability is disclosed. According to one aspect of the present invention, it is provided a semiconductor device comprising a transistor formed on a semiconductor substrate, a ferroelectric capacitor formed above the transistor and comprising a lower electrode, a ferroelectric film and an upper electrode, a first hydrogen barrier film formed over the ferroelectric capacitor, an insulator formed over the first hydrogen barrier film, a contact plug disposed in the insulator and electrically connected with the upper electrode, a second hydrogen barrier film disposed between the contact plug and the insulator continuously, and a wiring connected with the contact plug.

摘要翻译： 公开了一种包括具有改善的可靠性的铁电电容器的半导体器件。 根据本发明的一个方面，提供了一种半导体器件，包括形成在半导体衬底上的晶体管，形成在晶体管上方的铁电电容器，包括下电极，铁电体膜和上电极，第一氢阻挡膜 形成在所述铁电电容器上，形成在所述第一氢阻挡膜上的绝缘体，设置在所述绝缘体中并与所述上电极电连接的接触插塞，连续地配置在所述接触插塞和所述绝缘体之间的第二氢阻挡膜， 与接触插头。

公开(公告)号：US20100012994A1

公开(公告)日：2010-01-21

申请号：US12504439

申请日：2009-07-16

申请人： Tohru OZAKI ,  Iwao KUNISHIMA ,  Yoshinori KUMURA

发明人： Tohru OZAKI ,  Iwao KUNISHIMA ,  Yoshinori KUMURA

IPC分类号： H01L27/115 ,  H01L29/94

CPC分类号： H01L27/11507 ,  H01L27/11504 ,  H01L28/55

摘要： A semiconductor storage device has the ferroelectric capacitor has: a capacitor film formed above the MOS transistor with an interlayer insulating film interposed therebetween; a first capacitor electrode electrically connected to a source region of the MOS transistor and formed in contact with one side wall of the capacitor film; and a second capacitor electrode electrically connected to a drain region of the MOS transistor and formed in contact with the other side wall of the capacitor film, and the capacitor film is composed of a film stack including a plurality of films including a first insulating film intended to orient a film formed on an upper surface thereof in a predetermined direction and a ferroelectric film formed on the first insulating film to be oriented in a direction perpendicular to the semiconductor substrate.

摘要翻译： 具有铁电电容器的半导体存储装置具有：在MOS晶体管的上方形成有夹层绝缘膜的电容器膜; 电连接到所述MOS晶体管的源极区域并形成为与所述电容器膜的一个侧壁接触的第一电容器电极; 以及与MOS晶体管的漏极区域电连接并形成为与电容器膜的另一个侧壁接触的第二电容器电极，并且电容器膜由包括多个膜的膜堆叠构成，该多个膜包括第一绝缘膜 将形成在其上表面上的膜沿预定方向取向并形成在第一绝缘膜上的强电介质膜沿垂直于半导体衬底的方向取向。

公开(公告)号：US20090078979A1

公开(公告)日：2009-03-26

申请号：US12233987

申请日：2008-09-19

申请人： Yoshinori KUMURA ,  Yoshiro SHIMOJO

发明人： Yoshinori KUMURA ,  Yoshiro SHIMOJO

IPC分类号： H01L27/115 ,  H01L21/8246

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/55

摘要： A semiconductor device includes: a semiconductor substrate and a transistor formed on the semiconductor substrate. The semiconductor device also includes: a first interlayer insulation film formed on the semiconductor substrate including the upper portion of the transistor, a first contact formed to be connected through the first interlayer insulation film to the transistor, a ferroelectric capacitor formed to be connected to the first contact, a second interlayer insulation film formed on the first interlayer insulation film, and a second contact formed to connect the ferroelectric capacitor to a wiring through the second interlayer insulation film. The contact surfaces between the second contact and the ferroelectric capacitor have the same planar shape.

摘要翻译： 半导体器件包括：半导体衬底和形成在半导体衬底上的晶体管。 半导体器件还包括：形成在包括晶体管的上部的半导体衬底上的第一层间绝缘膜，形成为通过第一层间绝缘膜连接到晶体管的第一接触，形成为连接到晶体管的铁电电容器 第一接触，形成在第一层间绝缘膜上的第二层间绝缘膜，以及形成为将铁电电容器连接到通过第二层间绝缘膜的布线的第二接触。 第二触点和铁电电容器之间的接触表面具有相同的平面形状。

公开(公告)号：US20100193849A1

公开(公告)日：2010-08-05

申请号：US12689164

申请日：2010-01-18

申请人： Jun NISHIMURA ,  Yoshinori KUMURA ,  Hiroyuki KANAYA ,  Tohru OZAKI

发明人： Jun NISHIMURA ,  Yoshinori KUMURA ,  Hiroyuki KANAYA ,  Tohru OZAKI

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L27/11507 ,  H01L28/55

摘要： According to one embodiment, a semiconductor memory device having a ferroelectric film, includes a semiconductor substrate, a field effect transistor formed on the semiconductor substrate, an inter-layer insulating film formed on the field effect transistor and the semiconductor substrate, a plug constituted with a single-crystalline structure, the plug being formed in the inter-layer insulating film and being connected with a source or a drain of the field effect transistor, a lower electrode constituted with a single-crystalline structure formed on the plug, a ferroelectric film formed on the lower electrode an upper electrode formed on the ferroelectric film.

摘要翻译： 根据一个实施例，具有铁电体膜的半导体存储器件包括半导体衬底，形成在半导体衬底上的场效应晶体管，形成在场效应晶体管和半导体衬底上的层间绝缘膜，由 单晶结构，插塞形成在层间绝缘膜中并与场效应晶体管的源极或漏极连接，由形成在插塞上的单晶结构构成的下电极，铁电体膜 在下电极上形成形成在铁电体膜上的上电极。

公开(公告)号：US20080308902A1

公开(公告)日：2008-12-18

申请号：US12125557

申请日：2008-05-22

申请人： Yoshinori KUMURA ,  Tohru Ozaki

发明人： Yoshinori KUMURA ,  Tohru Ozaki

IPC分类号： H01L29/00 ,  H01L21/00

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57

摘要： This disclosure concerns a semiconductor device comprising a switching transistor provided on a semiconductor substrate; an interlayer dielectric film formed on the switching transistor; a ferroelectric capacitor including an upper electrode, a ferroelectric film, and a lower electrode formed on the interlayer dielectric film; a contact plug provided in the interlayer dielectric film and electrically connected to the lower electrode; a diffusion layer connecting between the contact plug and the switching transistor; a trench formed around the ferroelectric capacitor; and a barrier film filling in the trench and provided on a side surface of the ferroelectric capacitor and on an upper surface of the interlayer dielectric film, the barrier film suppressing percolation of hydrogen, wherein a thickness of the barrier film on the side surface of the ferroelectric capacitor is larger than a thickness of the barrier film on the upper surface of the interlayer dielectric film.

摘要翻译： 本公开涉及一种包括设置在半导体衬底上的开关晶体管的半导体器件; 形成在所述开关晶体管上的层间绝缘膜; 包括形成在层间绝缘膜上的上电极，铁电体膜和下电极的铁电电容器; 设置在所述层间电介质膜中并且电连接到所述下电极的接触插塞; 连接在所述接触插塞和所述开关晶体管之间的扩散层; 形成在铁电电容器周围的沟槽; 以及阻挡膜填充在所述沟槽中并且设置在所述强电介质电容器的侧表面上并且在所述层间电介质膜的上表面上，所述阻挡膜抑制氢的渗透，其中所述阻挡膜在所述侧壁表面上的厚度 铁电电容器大于层间电介质膜的上表面上的阻挡膜的厚度。

公开(公告)号：US20160204340A1

公开(公告)日：2016-07-14

申请号：US14808282

申请日：2015-07-24

申请人： Yoshinori KUMURA

发明人： Yoshinori KUMURA

IPC分类号： H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a method of manufacturing a magnetic memory device, includes forming a lower structure, the lower structure includes a bottom electrode, an interlayer insulating film surrounding the bottom electrode, and a predetermined element containing portion which is in contact with the bottom electrode and which contains a predetermined element other than an element contained in at least a surface area of the bottom electrode and an element contained in at least a surface area of the interlayer insulating film, forming a stack film including a magnetic layer, on the lower structure, forming a hard mask on the stack film, and etching the stack film to expose the predetermined element containing portion.

摘要翻译： 根据一个实施例，一种制造磁存储器件的方法包括形成下部结构，下部结构包括底部电极，围绕底部电极的层间绝缘膜和与底部电极接触的预定元件容纳部分 电极，并且其包含除了底部电极的至少表面区域中包含的元素之外的预定元素和包含在层间绝缘膜的至少表面积中的元素，在下部形成包括磁性层的叠层膜 结构，在叠层膜上形成硬掩模，并蚀刻叠层膜以暴露预定元件容纳部分。

公开(公告)号：US20150070983A1

公开(公告)日：2015-03-12

申请号：US14203449

申请日：2014-03-10

申请人： Yoshinori KUMURA

发明人： Yoshinori KUMURA

IPC分类号： G11C11/16 ,  H01L43/02

CPC分类号： G11C11/1659 ,  G11C7/12 ,  G11C11/161 ,  G11C11/1657 ,  H01L27/226

摘要： According to one embodiment, a magnetic memory device includes a bit line, a source line, a magnetoresistance effect element between the bit line and the source line, and a nonlinear element provided between the bit line and the source line and connected in series to the magnetoresistance effect element. The nonlinear element has a voltage-current characteristic in which current increases until a voltage to be applied becomes a predetermined applied voltage, when current flowing through the nonlinear element is within a range not exceeding a predetermined current, and current increases within an applied voltage range lower than the predetermined applied voltage, when current flowing through the nonlinear element is within a range exceeding the predetermined current.

摘要翻译： 根据一个实施例，磁存储器件包括位线，源极线，位线和源极线之间的磁阻效应元件，以及设置在位线和源极线之间的非线性元件，并与 磁阻效应元件。 非线性元件具有电流电流特性，其中当流过非线性元件的电流在不超过预定电流的范围内时，电流增加直到被施加的电压变为预定的施加电压，并且电流在施加的电压范围内增加 低于预定的施加电压，当流过非线性元件的电流在超过预定电流的范围内时。

公开(公告)号：US20160027843A1

公开(公告)日：2016-01-28

申请号：US14629023

申请日：2015-02-23

申请人： Yoshinori KUMURA

发明人： Yoshinori KUMURA

IPC分类号： H01L27/22 ,  H01L29/66 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC分类号： H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a semiconductor memory device includes a magnetic tunnel junction (MTJ) element, a contact layer and a first material layer. The contact layer is provided under the MTJ element and comprises a first material. The first material layer is provided around the contact layer and comprises the first material or an oxide of the first material.

摘要翻译： 根据一个实施例，半导体存储器件包括磁性隧道结（MTJ）元件，接触层和第一材料层。 接触层设置在MTJ元件下方并且包括第一材料。 第一材料层设置在接触层周围并且包括第一材料或第一材料的氧化物。

公开(公告)号：US20150255707A1

公开(公告)日：2015-09-10

申请号：US14331977

申请日：2014-07-15

申请人： Yoshinori KUMURA

发明人： Yoshinori KUMURA

IPC分类号： H01L43/02

CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C23/00 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a magnetic memory device includes a first electrode, a second electrode having magnetism and having a major surface facing a major surface of the first electrode, a third electrode having a major surface facing the major surface of the first electrode and located away from the second electrode, and a movable member having magnetism and located between the first and second electrodes and between the first and third electrodes, the movable member being able to be brought into contact with the first electrode and being able to be selectively brought into contact with one of the second and third electrodes.

摘要翻译： 根据一个实施例，磁存储器件包括第一电极，具有磁性并具有面向第一电极主表面的主表面的第二电极，具有面向第一电极的主表面的主表面的第三电极， 以及具有磁性并位于第一和第二电极之间以及第一和第三电极之间的可移动部件，可移动部件能够与第一电极接触并能够选择性地进入 与第二和第三电极之一接触。

公开(公告)号：US20100117127A1

公开(公告)日：2010-05-13

申请号：US12563068

申请日：2009-09-18

申请人： Yoshinori KUMURA

发明人： Yoshinori KUMURA

IPC分类号： H01L27/108 ,  H01L21/02

CPC分类号： H01L28/55 ,  H01L21/31053 ,  H01L27/11507 ,  H01L28/57

摘要： A semiconductor storage device includes a memory cell having a ferroelectric capacitor and a cell transistor connected in parallel. The memory cell includes: a first conductive layer provided above a substrate; a ferroelectric layer formed on a top surface of the first conductive layer; a second conductive layer formed on a top surface of the ferroelectric layer; and a stopper layer formed in the same layer as the ferroelectric layer. A selection ratio of the stopper layer under CMP is higher than that of the ferroelectric layer under CMP.

摘要翻译： 半导体存储装置包括具有并联连接的铁电电容器和单元晶体管的存储单元。 存储单元包括：设置在基板上方的第一导电层; 形成在所述第一导电层的顶表面上的铁电层; 形成在所述强电介质层的顶表面上的第二导电层; 以及与强电介质层形成在同一层中的阻挡层。 CMP下的停止层的选择比高于CMP下的铁电体层的选择比。