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公开(公告)号：US4674835A
公开(公告)日：1987-06-23
申请号：US765477
申请日：1985-08-14
CPC分类号： C03C13/042 , Y10T428/2929
摘要： In a fluoride glass optical fiber with extremely small transmission loss for infrared light having a core layer and a clad layer each consisting mainly of ZrF.sub.4 - BaF.sub.2 - LaF.sub.3 - AlF.sub.3, NaF and H.sub.f F.sub.4 are used as additives to obtain a desired refractive index difference between the core layer and the clad layer. The mixing ratio of the NaF to the H.sub.f F.sub.4 satisfies the realtions;.vertline.0.25 .DELTA.H.sub.f F.sub.4 -3.DELTA.NaF.vertline..ltoreq.5,where .DELTA.NaF is the difference between the amount (mol %) of the N.sub.a F to be added to the core layer and that to be added to the clad layer, and .DELTA.H.sub.f F.sub.4 to be added to the core layer and that to be added to the clad layer.
摘要翻译： 在具有芯层和包覆层的红外光传输损耗极小的氟化物玻璃光纤中，各自主要由ZrF4-BaF2-LaF3-AlF3组成，使用NaF和HfF4作为添加剂，以获得所需的折射率差 芯层和包覆层。 NaF与HfF4的混合比满足实际要求; | 0.025 DELTA HfF4-3 DELTA NaF|
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2.发明授权
公开(公告)号：US4729777A
公开(公告)日：1988-03-08
申请号：US897297
申请日：1986-08-15
IPC分类号： C03C13/04 , C03B5/00 , C03B8/00 , C03B37/012 , C03B37/014 , G02B6/00 , C03B37/023
CPC分类号： C03B37/01274 , C03B2201/82 , Y10S65/16
摘要： A method and apparatus is disclosed which ensures highly accurate control of the core-cladding diameter, enabling the fabrication of a preform for the single mode fiber. Moreover, glass refining steps for dehydration, the removal of compound ions, the reduction of the absorption loss by transition metals, etc. and preform manufacturing steps are combined into a series of steps, and the entire manufacturing process can be mechanized and automatically controlled; therefore, the yield rate of product is high and the industrial-scale productivity is also excellent.
摘要翻译： 公开了一种方法和装置，其确保对芯包层直径的高精度控制，从而能够制造用于单模光纤的预成型件。 此外，用于脱水，去除复合离子的玻璃精制步骤，通过过渡金属的吸收损失的降低等以及预成型件的制造步骤被组合成一系列步骤，整个制造过程可以被机械化和自动控制; 因此，产品成品率高，工业规模生产力也很好。
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公开(公告)号：US4810054A
公开(公告)日：1989-03-07
申请号：US903280
申请日：1986-09-03
CPC分类号： G02B6/2551
摘要： A fusion splicing method for optical fibers in which optical fibers are fusion spliced in an inert gas atmosphere after water adsorbed on their surfaces is removed by decomposition in a plasma of an inert gas containing a halogen.
摘要翻译： 在其中表面吸水后，在惰性气体气氛中将光纤熔接在其中的光纤的熔接方法通过在含有卤素的惰性气体的等离子体中分解来除去。
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公开(公告)号：US4597786A
公开(公告)日：1986-07-01
申请号：US767394
申请日：1985-08-19
摘要： A fluoride glass for infrared optical transmission fiber is purified for dehydration and deoxidation to reduce transmission loss by reacting melted fluoride glass with NF.sub.3 gas at temperature between 500.degree. C. and 800.degree. C. No scattering loss is increased by the present purification as decomposed product in the reaction does not precipitate.
摘要翻译： 用于红外光纤传输纤维的氟化物玻璃被净化用于脱水和脱氧，以通过在500℃和800℃之间的温度下将熔融的氟化物玻璃与NF 3气体反应来降低传输损耗。通过本发明纯化作为分解产物不会增加散射损失 在反应中不会沉淀。
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公开(公告)号：US5349600A
公开(公告)日：1994-09-20
申请号：US116323
申请日：1993-09-03
申请人： Osamu Shinbori , Yoshinori Mimura , Yukio Noda , Tetsuya Nakai
发明人： Osamu Shinbori , Yoshinori Mimura , Yukio Noda , Tetsuya Nakai
CPC分类号： H01S3/0941 , H01S3/0602 , H01S3/0612 , H01S3/0625 , H01S3/067 , H01S3/094084
摘要： A high-output, single fundamental transverse mode solid state laser is disclosed which uses a semiconductor laser array as an excitation light source. The solid state laser comprises: a laser element which includes a core containing an element added as a laser medium, a cladding containing no such laser medium element, and reflecting mirrors coated over the cladding surface for repeatedly reflecting incident excitation light so that it may repeatedly pass through the core; an excitation light source formed by semi-conductor laser or light emitting diode array; means for guiding the excitation light from the excitation light source to one side of the laser element for incidence thereto; and a resonator for the oscillation of the solid state laser.
摘要翻译： 公开了使用半导体激光器阵列作为激发光源的高输出单基本横模固态激光器。 固体激光器包括：激光元件，其包括含有作为激光介质添加的元件的芯，不包含这种激光介质元件的包层，以及涂覆在包覆表面上的反射镜，用于反复反射入射激发光，使得其可以重复 通过核心; 由半导体激光器或发光二极管阵列形成的激发光源; 用于将来自激发光源的激发光引导到激光元件的一侧入射到其上的装置; 以及用于固态激光器的振荡的谐振器。
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公开(公告)号：US5708752A
公开(公告)日：1998-01-13
申请号：US672538
申请日：1996-06-28
申请人： Yukio Noda , Yoshinori Mimura , Tetsuya Nakai , Toshio Tani
发明人： Yukio Noda , Yoshinori Mimura , Tetsuya Nakai , Toshio Tani
CPC分类号： G02B6/102 , C03C13/042 , G02B6/02
摘要： A high power laser transmitting fluoride glass fiber of an enhanced 2.94- .mu.m laser damage threshold value is disclosed, in which either of the core with a high refractive index and the cladding with a low refractive index is formed of fluoride glass which contains fluorine (F) as a component but has it substituted with 0 to 4.1 mol % of bromine (Br), chlorine (Cl), or bromine and chlorine. The optical fiber of the present invention may have its core formed of fluoride glass and its cladding formed of fluorine-contained resin, and the core glass has a composition that 70 to 80% of fluorine (F) is substituted with 0 to 4.1 mol % of bromine (Br), or chlorine (Cl), or bromine and chlorine.
摘要翻译： 公开了一种具有增强的2.94μm激光损伤阈值的高功率激光透射氟化物玻璃纤维，其中具有高折射率的芯中的任一种和具有低折射率的包层由含氟的氟化物玻璃形成（ F）作为组分，但是用0至4.1mol％的溴（Br），氯（Cl）或溴和氯代替。 本发明的光纤可以具有由氟化物玻璃形成的芯和由含氟树脂形成的包层，芯玻璃具有70〜80％的氟（F）被0〜4.1摩尔％ 的溴（Br）或氯（Cl），或溴和氯。
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公开(公告)号：US06393189B1
公开(公告)日：2002-05-21
申请号：US09507624
申请日：2000-02-17
申请人： Yoshinori Mimura , Yukio Noda , Tetsuya Nakai , Toshio Tani
发明人： Yoshinori Mimura , Yukio Noda , Tetsuya Nakai , Toshio Tani
IPC分类号： G02B602
CPC分类号： G02B6/0283 , G02B6/03638 , G02B6/4296
摘要： An optical beam diameter reducer for reducing a beam diameter of an optical beam comprises a three-layer structure composed of a central core, a refractive index inclined layer formed outside the core which refractive index gradually decreases toward the outside in the radial direction and a cladding layer formed outside the refractive index inclined layer.
摘要翻译： 用于减小光束的光束直径的光束直径减小器包括三层结构，其由中心芯，形成在芯外部的折射率向径向外侧逐渐减小的折射率倾斜层和包层 层形成在折射率倾斜层之外。
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公开(公告)号：US07655315B2
公开(公告)日：2010-02-02
申请号：US11331216
申请日：2006-01-13
申请人： Eiji Kamiyama , Seiichi Nakamura , Tetsuya Nakai
发明人： Eiji Kamiyama , Seiichi Nakamura , Tetsuya Nakai
CPC分类号： H01L21/76243
摘要： A silicon wafer includes a principal face for forming electronic devices; an end region; and a tapered region which is located between the principal face and the end region, in which the thickness of the silicon wafer is gradually reduced, and which has a slope that makes an angle of greater than zero degree and less than 9.5 degrees or an angle of greater than 19 degrees with the principal face. An SOI wafer prepared by forming a buried oxide layer in a silicon wafer includes a principal face, end region, and tapered region that are substantially the same as those described above. A method for manufacturing an SOI wafer includes the steps of implanting oxygen ions into a silicon wafer; and heat-treating the resulting silicon wafer such that a buried oxide layer is formed in the silicon wafer.
摘要翻译： 硅晶片包括用于形成电子器件的主面; 末端区域 以及位于主面和端部区域之间的锥形区域，其中硅晶片的厚度逐渐减小，并且具有大于零度且小于9.5度的角度的倾斜度或角度 与主面大于19度。 通过在硅晶片中形成掩埋氧化物层制备的SOI晶片包括与上述基本相同的主面，端部区域和锥形区域。 一种制造SOI晶片的方法包括将氧离子注入到硅晶片中的步骤; 并对所得到的硅晶片进行热处理，使得在硅晶片中形成掩埋氧化物层。
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公开(公告)号：US07514343B2
公开(公告)日：2009-04-07
申请号：US11450562
申请日：2006-06-08
申请人： Yoshiro Aoki , Yukio Komatsu , Tetsuya Nakai , Seiichi Nakamura
发明人： Yoshiro Aoki , Yukio Komatsu , Tetsuya Nakai , Seiichi Nakamura
IPC分类号： H01L21/425
CPC分类号： H01L21/26533 , H01L21/76243
摘要： This method for manufacturing a SIMOX wafer includes: heating a silicon wafer to 300° C. or more and implanting oxygen ions so as to form a high oxygen concentration layer within the silicon wafer; subjecting the silicon wafer to a cooling to less than 300° C. and an implanting of oxygen ions so as to form an amorphous layer; and subjecting the silicon wafer to a heat-treating in a mixed gas atmosphere containing oxygen so as to form a buried oxide layer. In the forming of the buried oxide layer, a starting temperature is less than 1350° C. and a maximum temperature is 1350° C. or more. This SIMOX wafer is manufactured by the above method and includes a BOX layer and a SOI layer on the BOX layer. The BOX layer has a thickness of 1300 Å or more and a breakdown voltage of 7 MV/cm or more, and the surface of the SOI layer and the interface between the SOI layer and the BOX layer have a roughness over a 10-μm square area of 4 Å rms or less.
摘要翻译： 该制造SIMOX晶片的方法包括：将硅晶片加热至300℃以上并注入氧离子以在硅晶片内形成高氧浓度层; 使硅晶片冷却至小于300℃，并注入氧离子以形成非晶层; 并在含氧气的混合气体气氛中对硅晶片进行热处理，以形成掩埋氧化物层。 在掩埋氧化物层的形成中，起始温度低于1350℃，最高温度为1350℃以上。 该SIMOX晶片通过上述方法制造，并且在BOX层上包括BOX层和SOI层。 BOX层的厚度为1300以上，击穿电压为7MV / cm以上，SOI层的表面和SOI层与BOX层之间的界面的平均粗糙度为10μm 面积为4Årms以下。
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公开(公告)号：US20070178680A1
公开(公告)日：2007-08-02
申请号：US11670636
申请日：2007-02-02
申请人： Yoshiro Aoki , Yukio Komatsu , Tetsuya Nakai , Seiichi Nakamura
发明人： Yoshiro Aoki , Yukio Komatsu , Tetsuya Nakai , Seiichi Nakamura
IPC分类号： H01L21/425 , H01L21/31
CPC分类号： H01L21/76243
摘要： A SIMOX wafer having a BOX layer with a thin film thickness is obtained without a reduction in productivity or deterioration in quality. In a method for manufacturing a SIMOX wafer comprising: a step of forming a first ion-implanted layer in a silicon wafer; a step of forming a second ion-implanted layer that is in an amorphous state; and a high-temperature heat treatment step of maintaining the wafer in an oxygen contained atmosphere at a temperature that is not lower than 1300° C. but less than a silicon melting point for 6 to 36 hours to change the first and the second ion-implanted layers into a BOX layer, a gas containing chlorine that is not less than 0.1 volume % but less than 1.0 volume % is mixed into an atmosphere during temperature elevation in the high-temperature heat treatment.
摘要翻译： 获得具有薄膜厚度的BOX层的SIMOX晶片，而不会降低生产率或质量劣化。 一种用于制造SIMOX晶片的方法，包括：在硅晶片中形成第一离子注入层的步骤; 形成处于非晶态的第二离子注入层的步骤; 以及将晶片保持在含氧气氛中的不低于1300℃但小于硅熔点6〜36小时的高温热处理步骤，以改变第一和第二离子交换树脂， 将注入层置于BOX层中，在高温热处理的升温过程中将含有不少于0.1体积％但小于1.0体积％的氯的气体混入大气中。
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