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    MULTIFERROIC ELEMENT
    1.
    发明申请
    MULTIFERROIC ELEMENT 审中-公开
    多元素

    公开(公告)号：US20090196818A1

    公开(公告)日：2009-08-06

    申请号：US12299778

    申请日：2007-04-12

    申请人： Yoshinori Tokura ,  Takahisa Arima ,  Yoshio Kaneko

    发明人： Yoshinori Tokura ,  Takahisa Arima ,  Yoshio Kaneko

    IPC分类号： C01G37/02 ,  C01G49/00 ,  C01G53/00 ,  C01G51/00

    CPC分类号： H01L43/10 ,  G11B9/02 ,  G11C11/16 ,  G11C11/1675 ,  G11C11/22 ,  G11C11/2275 ,  H01L27/222

    摘要： A multiferroic element having a simple structure in which orientation of electric polarization or magnetization of a solid state material can be controlled by applying a magnetic field or an electric field, respectively. By applying an external magnetic field to a multiferroic solid state material that exhibits ferroelectricity and ferromagnetism having a spin structure such that the orientation of spin is rotating along the outside surface of a cone (apex angle α at the top of the cone is in a range of 0

    摘要翻译： 一种具有简单结构的多铁素体元件，其中分别通过施加磁场或电场来控制固态材料的电极化或取向。 通过将外部磁场施加到显示具有自旋结构的铁电性和铁磁性的多铁性固体材料，使得旋转取向沿锥体的外表面旋转（锥顶部的顶角α在一定范围内） 0 <α<= 90度），可以控制具有与外部施加的磁场的方向基本垂直的取向的电极化。 同时，通过对多铁性固态材料施加外部电场，可以控制基本上垂直于外部施加电场方向的取向的磁化。

    Methods of dicing semiconductor wafer into chips, and structure of groove formed in dicing area
    3.
    发明授权
    Methods of dicing semiconductor wafer into chips, and structure of groove formed in dicing area 有权
    将半导体晶片切割成芯片的方法以及在切割区域中形成的凹槽的结构

    公开(公告)号：US06300224B1

    公开(公告)日：2001-10-09

    申请号：US09806262

    申请日：2001-03-28

    申请人： Takahisa Arima ,  Yukihisa Kusuda

    发明人： Takahisa Arima ,  Yukihisa Kusuda

    IPC分类号： H01L2146

    CPC分类号： H01L21/78 ,  H01L2224/48463 ,  H01L2924/10156

    摘要： A method for dicing a semiconductor wafer into chips is provided, in which the peeling-off of a hard protective film on the surface of a semiconductor substrate may be avoided. Two parallel grooves are formed at a dicing area around a chip by an etching process. Then, SiO2 film is deposited on the GaAs substrate as a protective film. At this time, a bending portion at the interface between the protective films on the inner surface of the groove and the surface of the substrate. When the part between two grooves is cut by a dicing blade, a stress to the protective film caused by the edge of the blade is concentrated to the bending portion, resulting in a crack along the bending portion.

    摘要翻译： 提供了一种将半导体晶片切割成芯片的方法，其中可以避免半导体衬底的表面上的硬保护膜的剥离。 通过蚀刻工艺在芯片周围的切割区域形成两个平行的沟槽。 然后，将SiO 2膜作为保护膜沉积在GaAs衬底上。 此时，在槽的内表面上的保护膜与基板的表面之间的界面处的弯曲部分。 当通过切割刀片切割两个凹槽之间的部分时，由刀片边缘引起的对保护膜的应力集中到弯曲部分，导致沿着弯曲部分的裂纹。

    Cross piping construction
    5.
    发明授权
    Cross piping construction 失效
    十字管道施工

    公开(公告)号：US4708372A

    公开(公告)日：1987-11-24

    申请号：US709207

    申请日：1985-03-07

    申请人： Takahisa Arima ,  Susumu Ninomiya ,  Yuji Horikawa ,  Tadasi Aoki

    发明人： Takahisa Arima ,  Susumu Ninomiya ,  Yuji Horikawa ,  Tadasi Aoki

    IPC分类号： F16L41/02 ,  F16L41/00

    CPC分类号： F16L41/021

    摘要： A cross piping for a header in a boiling water reactor has a main pipe coaxially connected to a center branch pipe at a cross portion. A plurality of transversely extending branch pipes also connect to this cross portion. The cross portion has a reduced diameter with respect to the main distributor pipe. In one embodiment, the cross portion is in the shape of a hemisphere having a radius equal to that of the main distributor pipe, the center of the hemispherical surface being positioned adjacent an upstream intersection of the main distributor pipe axis and an extension of the circumferential surfaces of the branch pipes. In another embodiment, the cross portion has a throttle portion which is either a flat surface or a curved surface.

    摘要翻译： 沸水反应器中的集管的十字管道具有在十字部分同轴连接到中心分支管的主管。 多个横向延伸的支管也连接到该十字部分。 交叉部分相对于主分配器管具有减小的直径。 在一个实施例中，十字形部分的半球形状具有与主分配器管的半径相等的半径，半球形表面的中心位于主分配器管轴线和圆周方向的延伸部分的上游交叉点附近 支管表面。 在另一个实施例中，十字形部分具有节流部分，其是平坦表面或曲面。