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公开(公告)号：US4727436A
公开(公告)日：1988-02-23
申请号：US946096
申请日：1986-12-23
CPC分类号： H04N1/40087
摘要： For reproducing a picture with a density gradient through printing, an overlapped region is provided in a high density dot reproduction range and a low density dot reproduction range. The switch-over between the high density dot at the overlapped region is conducted where the picture density sharply changes. This reduces the unfavorable perception of quality differences in a printed picture resulting from the switch-over between the high and low density dots.
摘要翻译： 为了通过印刷再现具有密度梯度的图像，以高密度点再现范围和低密度点再现范围提供重叠区域。 在重叠区域的高密度点之间进行切换，图像密度急剧变化。 这降低了由高密度点和低密度点之间的切换导致的打印图像中的质量差异的不利感觉。
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公开(公告)号：US4604654A
公开(公告)日：1986-08-05
申请号：US758851
申请日：1985-07-26
CPC分类号： H04N1/034 , B41J2/2125 , H04N1/40031 , H04N1/40087 , B41J2202/11
摘要： An image forming method comprises the steps of providing pattern elementary marks which provide an image pattern, controlling the size of the pattern elementary marks, and forming the pattern elementary marks substantially at equal intervals. The controlling step is such that use is made preferentially of the pattern elementary marks in an area wherein the variation in density gradient level relative to the variation in size of the pattern elementary marks is great. An apparatus for carrying out such method is provided.
摘要翻译： 图像形成方法包括以下步骤：提供提供图像图案的图案基本标记，控制图案基本标记的尺寸，以及基本等间隔地形成图案基本标记。 控制步骤是优先使用相对于图案基本标记的尺寸变化的密度梯度水平的变化较大的区域中的图案基本标记的使用。 提供了一种用于执行这种方法的设备。
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公开(公告)号：US4713746A
公开(公告)日：1987-12-15
申请号：US946095
申请日：1986-12-23
CPC分类号： H04N1/40087 , H04N1/40025 , H04N1/506
摘要： A picture-forming method comprises the steps of providing picture forming elementary particles having different optical densities; controlling the areas occupied by the respective picture forming elementary particles; and representing gradient by said different picture forming elementary particles while limiting the percentage of the gradient level area represented by the highest density elementary particle to said picture forming elementary particles to under 70% of the total area repsesented by said respective different picture forming elementary particles, thereby giving a picture which does not feel "rough". Apparatus is also disclosed for performing the method.
摘要翻译： 图像形成方法包括提供具有不同光密度的图像形成基本粒子的步骤; 控制各图像形成基本粒子所占据的面积; 并且通过所述不同的图像形成基本粒子表示梯度，同时将由最高密度基本粒子表示的梯度水平面积的百分比限制到所述图像形成基本粒子，使得由所述各个不同的图像形成基本粒子代替的总面积的70％以下， 从而给出不感觉“粗糙”的图片。 还公开了用于执行该方法的装置。
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4.发明授权Picture producing apparatus using multiple dot forming units and recording materials of different concentrations 失效使用多个点形成单元和不同浓度的记录材料的图像制作装置
公开(公告)号：US4713701A
公开(公告)日：1987-12-15
申请号：US844244
申请日：1986-03-24
CPC分类号： H04N1/40087
摘要： A picture producing apparatus forms a picture comprising a plurality of picture elements with different light-reflecting properties providing different optical reflection densities using a plurality of dot forming units to provide dots of recording materials of different concentrations. The optical reflection density range of an entire original picture to be reproduced is determined and selecting circuitry responsive to that determination selects at least one of the dot forming units to form picture elements reproducing the original picture. The dot forming units vary the areas of the picture elements formed by the dots so as to represent in the reproduced picture the optical reflection density range of the original.
摘要翻译： 图像产生装置使用多个点形成单元形成包括具有不同光反射特性的多个图像元素的图像，从而提供不同浓度的记录材料的点。 确定要再现的整个原始图像的光学反射浓度范围，并且响应于该确定的选择电路选择至少一个点形成单元以形成再现原始图像的图像元素。 点形成单元改变由点形成的像素的面积，以便在再现的图像中表示原件的光学反射浓度范围。
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公开(公告)号：US4560997A
公开(公告)日：1985-12-24
申请号：US509059
申请日：1983-06-29
CPC分类号： B41J2/2056 , H04N1/40031 , H04N1/40087
摘要： Method and apparatus for forming a pattern in which an array duty factor of elementary pattern marks which are elements for forming a picture is no less than 0.5.
摘要翻译： 用于形成其中作为用于形成图像的要素的基本图案标记的阵列占空因数不小于0.5的图案的方法和装置。
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公开(公告)号：US20220110934A1
公开(公告)日：2022-04-14
申请号：US17645509
申请日：2021-12-22
申请人： Takashi SATO , Takeshi Shimosato , Tatsuru Moritani , Tadahiko Morinaga , Yuichi Sato , Akihiro Kotsugai
发明人： Takashi SATO , Takeshi Shimosato , Tatsuru Moritani , Tadahiko Morinaga , Yuichi Sato , Akihiro Kotsugai
IPC分类号： A61K31/496 , A61K9/16
摘要： A pharmaceutical composition including particles each containing a water-soluble base material and a poorly water-soluble compound, the water-soluble base material containing a rapidly water-soluble compound, wherein the poorly water-soluble compound is a kinase inhibitor and exists in an amorphous state in the water-soluble base material.
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7.发明授权Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device 有权氧化物半导体膜，半导体器件以及半导体器件的制造方法公开(公告)号：US08927982B2
公开(公告)日：2015-01-06
申请号：US13415080
申请日：2012-03-08
申请人： Junichi Koezuka , Yuichi Sato , Shinji Ohno
发明人： Junichi Koezuka , Yuichi Sato , Shinji Ohno
IPC分类号： H01L29/12 , H01L29/786
CPC分类号： H01L29/78618 , G02F1/136204 , G02F1/136213 , G02F1/136286 , G02F1/1368 , H01L21/02565 , H01L21/0259 , H01L21/265 , H01L27/1052 , H01L27/1225 , H01L27/1255 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.
摘要翻译： 通过对使用氧化物半导体膜的晶体管赋予稳定的电特性来制造高可靠性的半导体器件。 在使用有源层的氧化物半导体膜的晶体管中，在与沟道区相邻的源极区域和漏极区域中设置有微孔。 通过在形成于氧化物半导体膜中的源极区域和漏极区域内设置微孔，氧化物半导体膜的沟道区域中所含的氢能够被捕获在微孔中。
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公开(公告)号：US08859330B2
公开(公告)日：2014-10-14
申请号：US13419468
申请日：2012-03-14
申请人： Junichi Koezuka , Shinji Ohno , Yuichi Sato
发明人： Junichi Koezuka , Shinji Ohno , Yuichi Sato
IPC分类号： H01L21/00 , H01L21/425 , H01L29/66 , H01L29/786 , H01L27/12
CPC分类号： H01L21/425 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： A semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability, is provided. In a method for manufacturing a transistor including an oxide semiconductor film, an implantation step where rare gas ions are implanted to the oxide semiconductor film is performed, and the oxide semiconductor film to which rare gas ions are implanted is subjected to a heating step under reduced pressure, in a nitrogen atmosphere, or in a rare gas atmosphere, whereby hydrogen or water contained in the oxide semiconductor film to which rare gas ions are implanted is released; thus, the oxide semiconductor film is highly purified.
摘要翻译： 提供了包括具有稳定的电特性和高可靠性的氧化物半导体的半导体器件。 在制造包括氧化物半导体膜的晶体管的方法中，执行将稀有气体离子注入到氧化物半导体膜中的注入步骤，并且将减少稀有气体离子的氧化物半导体膜在减小的温度下进行加热步骤 压力，在氮气气氛中或在稀有气体气氛中，由此释放在其中植入稀有气体离子的氧化物半导体膜中所含的氢或水; 因此，氧化物半导体膜被高度纯化。
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9.发明授权Method for processing oxide semiconductor film and method for manufacturing semiconductor device 有权氧化物半导体膜的制造方法及半导体装置的制造方法公开(公告)号：US08716073B2
公开(公告)日：2014-05-06
申请号：US13547451
申请日：2012-07-12
申请人： Shunpei Yamazaki , Shinji Ohno , Yuichi Sato , Junichi Koezuka , Sachiaki Tezuka
发明人： Shunpei Yamazaki , Shinji Ohno , Yuichi Sato , Junichi Koezuka , Sachiaki Tezuka
IPC分类号： H01L21/336
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02664 , H01L27/1225
摘要： To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.
摘要翻译： 提供一种可以应用于晶体管的包含低电阻区域的氧化物半导体膜。 提供可以高速执行的包括氧化物半导体膜的晶体管。 提供一种高性能半导体器件，其包括能够以高产率高速执行的包括氧化物半导体膜的晶体管。 在氧化物半导体膜上形成具有还原性的膜。 接下来，氧原子的一部分从氧化物半导体膜转移到具有还原性的膜。 接下来，通过具有还原性的膜向氧化物半导体膜添加杂质，然后去除具有还原性的膜，从而在氧化物半导体膜中形成低电阻区域。
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10.发明授权Alloy with high glass forming ability and alloy-plated metal material using same 有权具有高玻璃形成能力的合金和使用其的合金镀金属材料公开(公告)号：US08637163B2
公开(公告)日：2014-01-28
申请号：US12309391
申请日：2007-07-19
申请人： Kohei Tokuda , Koichi Nose , Yuichi Sato , Makoto Nakazawa
发明人： Kohei Tokuda , Koichi Nose , Yuichi Sato , Makoto Nakazawa
CPC分类号： C23C30/00 , C22C1/002 , C22C18/00 , C22C21/06 , C22C21/12 , C22C45/00 , C22C45/001 , C22C45/005 , C22C45/08 , C23C2/04 , C23C2/06 , C23C2/12 , C23C4/123 , Y10T428/12493 , Y10T428/12799
摘要： An alloy with a high glass forming ability characterized by containing a group of elements A with atomic radii of less than 0.145 nm of a total of 20 to 85 atm %, a group of elements B with atomic radii of 0.145 nm to less than 0.17 nm of a total of 10 to 79.7 atm %, and a group of elements C with atomic radii of 0.17 nm or more of a total of 0.3 to 15 atm %; when the elements with the greatest contents in the group of elements A, group of elements B, and group of elements C are respectively designated as the “element a”, “element b”, and “element c”, by the ratio of the content of the element a in the group of elements A (for example, Zn and/or Al), the ratio of the content of the element b in the group of elements B (for example, Mg), and the ratio of the content of the element c in the group of elements C (for example, Ca) all being 70 atm % or more; and by the liquid forming enthalpy between any two elements selected from the element a, element b, and element c being negative.
摘要翻译： 具有高玻璃形成能力的合金，其特征在于含有一组元素A，原子半径小于0.145nm，总数为20至85atm％的元素A，原子半径为0.145nm至小于0.17nm的元素B 总计为10〜79.7atm％，原子半径为0.17nm以上的元素C为0.3〜15atm％的组合; 当元素A，元素组B和元素C组中具有最大含量的元素分别被指定为“元素a”，“元素b”和“元素c”时，以 元素A（例如Zn和/或Al）中的元素a的含量，元素B的元素B的含量（例如Mg）的含量与含量的比例 元素C（例如Ca）中的元素c全部为70atm％以上; 并且通过在从元件a，元件b和元件c中选择的任何两个元件之间的液体形成焓是负的。
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