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    Semiconductor device and a method of manufacturing the same
    4.
    发明授权
    Semiconductor device and a method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07087955B2

    公开(公告)日：2006-08-08

    申请号：US10811830

    申请日：2004-03-30

    申请人： Yoshiyuki Kawashima ,  Fumitoshi Ito ,  Takeshi Sakai ,  Yasushi Ishii ,  Yasuhiro Kanamaru ,  Takashi Hashimoto ,  Makoto Mizuno ,  Kousuke Okuyama

    发明人： Yoshiyuki Kawashima ,  Fumitoshi Ito ,  Takeshi Sakai ,  Yasushi Ishii ,  Yasuhiro Kanamaru ,  Takashi Hashimoto ,  Makoto Mizuno ,  Kousuke Okuyama

    IPC分类号： H01L29/788

    CPC分类号： H01L29/66825 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42324 ,  H01L29/66833

    摘要： A semiconductor device has a nonvolatile memory employing a split-gate type memory cell structure, using a nitride film as a charge storage layer. An n-type semiconductor region is formed in a main surface of a semiconductor substrate, and then, a memory gate electrode of a memory cell of a split gate type and a charge storage layer are formed over the semiconductor region. Subsequently, side walls are formed on side surfaces of the memory gate electrode, and a photoresist pattern is formed over the main surface of the semiconductor substrate. The photoresist pattern serves as an etching mask, and a part of the main surface of the semiconductor substrate is removed by etching to form a dent. In the region of the dent, the n-type semiconductor region is removed. Then, a p-type semiconductor region for forming a channel of an nMIS transistor for selecting a memory cell is formed.

    摘要翻译： 半导体器件具有使用氮化物膜作为电荷存储层的采用分离栅型存储单元结构的非易失性存储器。 在半导体衬底的主表面中形成n型半导体区域，然后在半导体区域上形成分裂栅型存储单元的存储栅电极和电荷存储层。 随后，在存储栅电极的侧表面上形成侧壁，并且在半导体衬底的主表面上形成光刻胶图形。 光致抗蚀剂图案用作蚀刻掩模，并且通过蚀刻去除半导体衬底的主表面的一部分以形成凹陷。 在凹陷的区域中，去除n型半导体区域。 然后，形成用于形成用于选择存储单元的nMIS晶体管的沟道的p型半导体区域。

    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120313160A1

    公开(公告)日：2012-12-13

    申请号：US13591035

    申请日：2012-08-21

    申请人： Koichi TOBA ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Satoru Machida ,  Munekatsu Nakagawa ,  Takashi Hashimoto

    发明人： Koichi TOBA ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Satoru Machida ,  Munekatsu Nakagawa ,  Takashi Hashimoto

    IPC分类号： H01L29/792

    CPC分类号： H01L29/7885 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/42328

    摘要： Provided is a semiconductor device having, over a semiconductor substrate, a control gate electrode and a memory gate electrode which are adjacent to each other and constitute a nonvolatile memory. The height of the memory gate electrode is lower than the height of the control gate electrode. A metal silicide film is formed over the upper surface of the control gate electrode, but not formed over the upper surface of the memory gate electrode. The memory gate electrode has, over the upper surface thereof, a sidewall insulating film made of silicon oxide. This sidewall insulating film is formed in the same step as that for the formation of respective sidewall insulating films over the sidewalls of the memory gate electrode and the control gate electrode. The present invention makes it possible to improve the production yield and performance of the semiconductor device having a nonvolatile memory.

    摘要翻译： 提供了一种在半导体衬底上具有彼此相邻并构成非易失性存储器的控制栅电极和存储栅电极的半导体器件。 存储栅电极的高度低于控制栅电极的高度。 在控制栅电极的上表面上形成金属硅化物膜，但不形成在存储栅电极的上表面上。 存储栅电极在其上表面上具有由氧化硅制成的侧壁绝缘膜。 该侧壁绝缘膜以与用于在存储栅电极和控制栅电极的侧壁上形成各个侧壁绝缘膜的步骤相同的步骤形成。 本发明使得可以提高具有非易失性存储器的半导体器件的生产率和性能。

    Semiconductor device and a method of manufacturing the same
    9.
    发明授权
    Semiconductor device and a method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08084800B2

    公开(公告)日：2011-12-27

    申请号：US12239807

    申请日：2008-09-28

    申请人： Yoshiyuki Kawashima ,  Koichi Toba ,  Yasushi Ishii ,  Toshikazu Matsui ,  Takashi Hashimoto

    发明人： Yoshiyuki Kawashima ,  Koichi Toba ,  Yasushi Ishii ,  Toshikazu Matsui ,  Takashi Hashimoto

    IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/8242 ,  H01L21/20

    CPC分类号： H01L28/60 ,  H01L27/0629 ,  H01L27/0805 ,  H01L27/105 ,  H01L27/10805 ,  H01L27/11526 ,  H01L27/11531 ,  H01L27/11573 ,  H01L28/40

    摘要： In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode formed over the lower electrode through a capacitor insulating film. Basically, the lower electrode and the upper electrode are formed from polysilicon films and a cobalt silicide film formed over the surfaces of the polysilicon films. End portions of the cobalt silicide film formed over the upper electrode are spaced apart a distance from end portions of the upper electrode. Besides, end portions of the cobalt silicide film formed over the lower electrode are spaced apart a distance from boundaries between the upper electrode and the lower electrode.

    摘要翻译： 关于包括电容器元件的半导体器件，提供了一种能够提高电容器元件的可靠性的技术。 电容器元件形成在半导体衬底上形成的元件隔离区域中。 电容器元件包括通过电容器绝缘膜形成在下电极上的下电极和上电极。 基本上，下电极和上电极由形成在多晶硅膜的表面上的多晶硅膜和硅化钴膜形成。 形成在上电极上的钴硅化物膜的端部与上电极的端部间隔开一定距离。 此外，形成在下电极上的钴硅化物膜的端部与上电极和下电极之间的边界间隔一定距离。