公开(公告)号：US20050003088A1

公开(公告)日：2005-01-06

申请号：US10882532

申请日：2004-06-30

申请人： Young Park ,  Byung Cho ,  Hong Lim ,  Sang Lee ,  Sahng Lee ,  Tae Seo ,  Ho Chang

发明人： Young Park ,  Byung Cho ,  Hong Lim ,  Sang Lee ,  Sahng Lee ,  Tae Seo ,  Ho Chang

IPC分类号： H01L21/205 ,  C23C16/00 ,  C23C16/44 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/32862 ,  C23C16/4405

摘要： Provided is a method of depositing a thin film on a wafer. The method includes an operation of loading a wafer on a wafer block; an operation of depositing a thin film on the wafer after loading the wafer; an operation of unloading the wafer on which the thin film is deposited from the wafer block; an operation of dry cleaning to remove thin films accumulated on an inner surface of the chamber after unloading the wafer; and an operation of chamber seasoning to form an atmosphere for depositing the main thin film after dry cleaning, wherein the dry cleaning operation comprises: an operation of loading a dummy wafer on the wafer block after unloading the wafer; an operation of main dry cleaning to remove the thin films accumulated on the inner surface of the chamber by dry cleaning by supplying an inert gas and a cleaning gas and supplying a RF energy to the chamber; an operation of sub-dry cleaning to remove an element of the cleaning gas used in the operation of main dry cleaning and remaining on the surface of the chamber by activating a gas selected from the group consisting of H2, NH3, Ar, and N2 by applying RF energy into the chamber while discontinuing supplying of the cleaning gas into the chamber; and an operation of unloading the dummy wafer from the wafer block after the sub-dry cleaning operation.

摘要翻译： 提供了一种在晶片上沉积薄膜的方法。 该方法包括将晶片装载在晶片块上的操作; 在加载晶片之后在晶片上沉积薄膜的操作; 从晶片块卸载其上沉积有薄膜的晶片的操作; 干燥清洗操作，以在卸载晶片之后去除积聚在室内表面上的薄膜; 以及室内调节的操作，以形成用于在干洗后沉积主薄膜的气氛，其中所述干洗操作包括：在卸载晶片之后将晶片块上的虚设晶片加载的操作; 主干燥操作，通过供给惰性气体和清洁气体并向室提供RF能量通过干洗来除去积聚在室内表面上的薄膜; 通过将通过活化从由H 2，NH 3，Ar和N 2组成的组中选出的气体来除去主要干洗操作中使用的清洁气体的元素并残留在室的表面上的次干洗操作， 在停止将清洁气体供应到所述室中的同时将RF能量施加到所述室中; 以及在次干洗操作之后从晶片块卸载虚设晶片的操作。

公开(公告)号：US20060096534A1

公开(公告)日：2006-05-11

申请号：US11264993

申请日：2005-11-02

申请人： Hong Lim ,  Sahng Lee ,  Tae Seo ,  Ho Chang

发明人： Hong Lim ,  Sahng Lee ,  Tae Seo ,  Ho Chang

IPC分类号： C23C16/00

CPC分类号： C23C16/4481

摘要： A thin film deposition apparatus that can effectively use a chemical source having a high vaporization temperature is provided. The thin film deposition apparatus includes a chamber for depositing a thin film on a wafer, a canister for accommodating a liquid chemical source to be supplied to the chamber, and a vaporizer for vaporizing the liquid chemical source bubbled in the canister and providing the vaporized chemical source to the chamber. The vaporizer is installed on a top surface or lateral surface of the chamber by an adaptor block to be incorporated into the chamber. A first gas line between the vaporizer and the chamber is formed within the adaptor block.

摘要翻译： 提供了可以有效地使用具有高蒸发温度的化学源的薄膜沉积装置。 薄膜沉积设备包括用于在晶片上沉积薄膜的腔室，用于容纳要供应到腔室的液体化学源的罐，以及用于蒸发鼓泡在罐中的液体化学源并提供蒸发化学物质的蒸发器 来源到房间。 蒸发器通过适配器块安装在室的顶表面或侧表面上，以装入室中。 蒸发器和室之间的第一气体管线形成在适配器块内。

公开(公告)号：US20070026144A1

公开(公告)日：2007-02-01

申请号：US10569929

申请日：2004-08-28

申请人： Young Park ,  Sahng Lee ,  Tae Seo ,  Ho Chang

发明人： Young Park ,  Sahng Lee ,  Tae Seo ,  Ho Chang

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/34 ,  C23C16/4405 ,  C23C16/452

摘要： Provided is a method of depositing a thin film. The method is performed using a thin film deposition apparatus that includes a reaction chamber having a wafer block located in a chamber to heat a loaded wafer up to a predetermined temperature, a top lid covering the chamber to seal the chamber, and shower head coupled under the top lid and having a first injection hole and a second injection hole, through which a first reaction gas and a second reaction gas are injected into the wafer, a reaction gas supplying unit supplying the first and second reaction gases into the reaction chamber, and a gas heating path unit installed on a second conveying line between first and second conveying lines connecting the reaction chamber and the reaction gas supplying unit to heat the gas passing through itself, and the method includes the operations of: loading the wafer on the wafer block; depositing a thin film by injecting the first reaction gas and the second reaction gas that is thermally activated onto the wafer through the first and second injection holes; flowing a heat treatment gas including an H element onto the thin film to reduce impurities included in the thin film; and unloading the wafer, on which the thin film is deposited, from the wafer block. If the second reaction gas has a temperature of T1 before passing through the gas heating path unit and a temperature of T2 after passing through the gas heating path unit, T2 is higher than T1, and if the heat treatment gas has a temperature of T1 before passing through the gas heating path unit and a temperature of T3 after passing through the gas heating path unit, T3 is same as T1 or higher.

摘要翻译： 提供了沉积薄膜的方法。 该方法使用薄膜沉积设备进行，该薄膜沉积设备包括具有位于室中的晶片块以将加载的晶片加热至预定温度的反应室，覆盖室以密封室的顶盖以及耦合在下面的淋浴头 所述顶盖具有第一注入孔和第二注入孔，将第一反应气体和第二反应气体注入到所述晶片中，将所述第一和第二反应气体供给到所述反应室中的反应气体供给单元，以及 气体加热路径单元，安装在连接反应室和反应气体供应单元的第一和第二输送管线之间的第二输送管线上，以加热通过其自身的气体，并且该方法包括以下操作：将晶片装载在晶片块 ; 通过将第一反应气体和热活化的第二反应气体通过第一和第二注入孔注入到晶片上来沉积薄膜; 将包含H元素的热处理气体流到薄膜上以减少薄膜中包含的杂质; 并从晶片块上卸载沉积有薄膜的晶片。 如果第二反应气体在通过气体加热路径单元之前具有T 1的温度，并且在通过气体加热路径单元之后具有T 2的温度，则T 2高于T 1，并且如果热处理气体具有 在通过气体加热路径单元之前的T 1的温度和通过气体加热路径单元的T 3的温度T 3与T 1以上相同。

公开(公告)号：US20060210712A1

公开(公告)日：2006-09-21

申请号：US11377153

申请日：2006-03-16

申请人： Young Park ,  Sahng Lee ,  Ki Lee ,  Tae Seo

发明人： Young Park ,  Sahng Lee ,  Ki Lee ,  Tae Seo

IPC分类号： C23C16/00

CPC分类号： C23C16/45527 ,  C23C16/45523

摘要： Provided is a method of depositing a thin film on a substrate using an impulse feeding process. The method includes performing a second reaction gas continuous feeding process of continuously feeding a second reaction gas into a chamber in which the substrate is installed, and performing a number of times, during the second reaction gas continuous feeding process, a process cycle including a first reaction gas feeding process of feeding a first reaction gas into the chamber and a first reaction gas purge process of purging the first reaction gas that is not adhered onto the substrate. The second reaction gas continuous feeding process includes a second reaction gas impulse process of feeding the second reaction gas at an impulse flow rate greater than a basic flow rate during the first reaction gas purge process.

摘要翻译： 提供了使用脉冲进给工艺在基板上沉积薄膜的方法。 该方法包括进行将第二反应气体连续供给到其中安装基板的室中的第二反应气体连续进料过程，并且在第二反应气体连续进料过程期间进行多次，包括第一反应气体 将第一反应气体进料到反应室中的反应气体进料过程以及清洗未附着在基材上的第一反应气体的第一反应气体吹扫工序。 第二反应气体连续进料方法包括在第一反应气体净化过程中以大于碱性流速的脉冲流速供给第二反应气体的第二反应气体脉冲过程。

公开(公告)号：US20080044567A1

公开(公告)日：2008-02-21

申请号：US11571547

申请日：2005-12-14

申请人： Tae Seo ,  Young Park ,  Ki Lee ,  Sahng Lee

发明人： Tae Seo ,  Young Park ,  Ki Lee ,  Sahng Lee

IPC分类号： C23C16/00

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76861

摘要： Disclosed is a method of depositing thin films, in which the thin films are continuously deposited into one chamber and 1-6 wafers are loaded into the chamber. In the method, a process gap between a shower head or a gas injection unit and a substrate is capable of being controlled. The method comprises (a) loading at least one substrate into the chamber, (b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, (c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited, (d) depositing the TiN thin film onto the substrate, moved to set the second process gap, and (e) unloading the substrate upon which the Ti/TiN thin films are deposited. If it is possible to continuously deposit Ti/TiN thin films on 1-6 substrates in one chamber, it is possible to set only one chamber among 4 chambers in a PM period, thereby an operating ratio of a cluster tool can be significantly improved. When Ti/TiN is continuously deposited in one chamber, the time needed to move a substrate from a Ti chamber to a TiN chamber is reduced, thus treatment efficiency of the substrate per unit time is significantly increased.

摘要翻译： 公开了一种沉积薄膜的方法，其中薄膜连续地沉积到一个室中，并且将1-6个晶片装入室中。 在该方法中，能够控制淋浴喷头或气体喷射单元与基板之间的处理间隙。 该方法包括：（a）将至少一个衬底装载到腔室中，（b）将Ti薄膜沉积到衬底上，进行调整，使得保持第一工艺间隙;（c）移动晶片块使得第一工艺间隙 改变为第二工艺间隙，以便控制沉积Ti薄膜的衬底的工艺间隙，（d）将TiN薄膜沉积到衬底上，移动以设定第二工艺间隙，（e） 卸载沉积有Ti / TiN薄膜的基板。 如果可以在一个室中的1-6个基板上连续沉积Ti / TiN薄膜，则可以在PM周期内在4个室中仅设置一个室，从而可以显着提高簇工具的运行比。 当在一个室中连续沉积Ti / TiN时，将衬底从Ti室移动到TiN室所需的时间减少，因此每单位时间衬底的处理效率显着提高。

公开(公告)号：US20060040495A1

公开(公告)日：2006-02-23

申请号：US11205990

申请日：2005-08-17

申请人： Young Park ,  Sahng Lee ,  Tae Seo

发明人： Young Park ,  Sahng Lee ,  Tae Seo

IPC分类号： H01L21/44

CPC分类号： H01L21/02186 ,  C23C16/34 ,  C23C16/45523 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/318 ,  H01L21/76846

摘要： Provided is a method of depositing a metal nitride film having a multilayer structure and different deposition speeds on a substrate. The method is performed by forming a first lower metal nitride film on the substrate at a first deposition speed, forming a second lower metal nitride film on the first lower metal nitride film at a second deposition speed, and forming an upper metal nitride film having a large content of nitrogen (N) on a lower TiN film which is formed by the forming of the first lower metal nitride film and the second lower metal nitride film, at a third deposition speed, to improve stability with respect to exposure to air/moisture. The deposition speed of the metal nitride film having a multi-layer structure satisfies a relationship that the second deposition speed ≧the first deposition speed ≧the third deposition speed.

摘要翻译： 提供了在基板上沉积具有多层结构和不同沉积速度的金属氮化物膜的方法。 该方法通过以第一沉积速度在基板上形成第一下部金属氮化物膜，以第二沉积速度在第一下部金属氮化物膜上形成第二个下部金属氮化物膜，并形成具有 通过以第三沉积速度形成第一下部金属氮化物膜和第二个下部金属氮化物膜而形成的下部TiN膜上的氮（N）含量大，以提高相对于暴露于空气/水分的稳定性 。 具有多层结构的金属氮化物膜的沉积速度满足第二沉积速度> =第一沉积速度> =第三沉积速度的关系。