公开(公告)号：US20060210712A1

公开(公告)日：2006-09-21

申请号：US11377153

申请日：2006-03-16

申请人： Young Park ,  Sahng Lee ,  Ki Lee ,  Tae Seo

发明人： Young Park ,  Sahng Lee ,  Ki Lee ,  Tae Seo

IPC分类号： C23C16/00

CPC分类号： C23C16/45527 ,  C23C16/45523

摘要： Provided is a method of depositing a thin film on a substrate using an impulse feeding process. The method includes performing a second reaction gas continuous feeding process of continuously feeding a second reaction gas into a chamber in which the substrate is installed, and performing a number of times, during the second reaction gas continuous feeding process, a process cycle including a first reaction gas feeding process of feeding a first reaction gas into the chamber and a first reaction gas purge process of purging the first reaction gas that is not adhered onto the substrate. The second reaction gas continuous feeding process includes a second reaction gas impulse process of feeding the second reaction gas at an impulse flow rate greater than a basic flow rate during the first reaction gas purge process.

摘要翻译： 提供了使用脉冲进给工艺在基板上沉积薄膜的方法。 该方法包括进行将第二反应气体连续供给到其中安装基板的室中的第二反应气体连续进料过程，并且在第二反应气体连续进料过程期间进行多次，包括第一反应气体 将第一反应气体进料到反应室中的反应气体进料过程以及清洗未附着在基材上的第一反应气体的第一反应气体吹扫工序。 第二反应气体连续进料方法包括在第一反应气体净化过程中以大于碱性流速的脉冲流速供给第二反应气体的第二反应气体脉冲过程。

公开(公告)号：US20080044567A1

公开(公告)日：2008-02-21

申请号：US11571547

申请日：2005-12-14

申请人： Tae Seo ,  Young Park ,  Ki Lee ,  Sahng Lee

发明人： Tae Seo ,  Young Park ,  Ki Lee ,  Sahng Lee

IPC分类号： C23C16/00

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76861

摘要： Disclosed is a method of depositing thin films, in which the thin films are continuously deposited into one chamber and 1-6 wafers are loaded into the chamber. In the method, a process gap between a shower head or a gas injection unit and a substrate is capable of being controlled. The method comprises (a) loading at least one substrate into the chamber, (b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, (c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited, (d) depositing the TiN thin film onto the substrate, moved to set the second process gap, and (e) unloading the substrate upon which the Ti/TiN thin films are deposited. If it is possible to continuously deposit Ti/TiN thin films on 1-6 substrates in one chamber, it is possible to set only one chamber among 4 chambers in a PM period, thereby an operating ratio of a cluster tool can be significantly improved. When Ti/TiN is continuously deposited in one chamber, the time needed to move a substrate from a Ti chamber to a TiN chamber is reduced, thus treatment efficiency of the substrate per unit time is significantly increased.

摘要翻译： 公开了一种沉积薄膜的方法，其中薄膜连续地沉积到一个室中，并且将1-6个晶片装入室中。 在该方法中，能够控制淋浴喷头或气体喷射单元与基板之间的处理间隙。 该方法包括：（a）将至少一个衬底装载到腔室中，（b）将Ti薄膜沉积到衬底上，进行调整，使得保持第一工艺间隙;（c）移动晶片块使得第一工艺间隙 改变为第二工艺间隙，以便控制沉积Ti薄膜的衬底的工艺间隙，（d）将TiN薄膜沉积到衬底上，移动以设定第二工艺间隙，（e） 卸载沉积有Ti / TiN薄膜的基板。 如果可以在一个室中的1-6个基板上连续沉积Ti / TiN薄膜，则可以在PM周期内在4个室中仅设置一个室，从而可以显着提高簇工具的运行比。 当在一个室中连续沉积Ti / TiN时，将衬底从Ti室移动到TiN室所需的时间减少，因此每单位时间衬底的处理效率显着提高。

公开(公告)号：US20050003088A1

公开(公告)日：2005-01-06

申请号：US10882532

申请日：2004-06-30

申请人： Young Park ,  Byung Cho ,  Hong Lim ,  Sang Lee ,  Sahng Lee ,  Tae Seo ,  Ho Chang

发明人： Young Park ,  Byung Cho ,  Hong Lim ,  Sang Lee ,  Sahng Lee ,  Tae Seo ,  Ho Chang

IPC分类号： H01L21/205 ,  C23C16/00 ,  C23C16/44 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/32862 ,  C23C16/4405

摘要： Provided is a method of depositing a thin film on a wafer. The method includes an operation of loading a wafer on a wafer block; an operation of depositing a thin film on the wafer after loading the wafer; an operation of unloading the wafer on which the thin film is deposited from the wafer block; an operation of dry cleaning to remove thin films accumulated on an inner surface of the chamber after unloading the wafer; and an operation of chamber seasoning to form an atmosphere for depositing the main thin film after dry cleaning, wherein the dry cleaning operation comprises: an operation of loading a dummy wafer on the wafer block after unloading the wafer; an operation of main dry cleaning to remove the thin films accumulated on the inner surface of the chamber by dry cleaning by supplying an inert gas and a cleaning gas and supplying a RF energy to the chamber; an operation of sub-dry cleaning to remove an element of the cleaning gas used in the operation of main dry cleaning and remaining on the surface of the chamber by activating a gas selected from the group consisting of H2, NH3, Ar, and N2 by applying RF energy into the chamber while discontinuing supplying of the cleaning gas into the chamber; and an operation of unloading the dummy wafer from the wafer block after the sub-dry cleaning operation.

摘要翻译： 提供了一种在晶片上沉积薄膜的方法。 该方法包括将晶片装载在晶片块上的操作; 在加载晶片之后在晶片上沉积薄膜的操作; 从晶片块卸载其上沉积有薄膜的晶片的操作; 干燥清洗操作，以在卸载晶片之后去除积聚在室内表面上的薄膜; 以及室内调节的操作，以形成用于在干洗后沉积主薄膜的气氛，其中所述干洗操作包括：在卸载晶片之后将晶片块上的虚设晶片加载的操作; 主干燥操作，通过供给惰性气体和清洁气体并向室提供RF能量通过干洗来除去积聚在室内表面上的薄膜; 通过将通过活化从由H 2，NH 3，Ar和N 2组成的组中选出的气体来除去主要干洗操作中使用的清洁气体的元素并残留在室的表面上的次干洗操作， 在停止将清洁气体供应到所述室中的同时将RF能量施加到所述室中; 以及在次干洗操作之后从晶片块卸载虚设晶片的操作。

公开(公告)号：US20070026144A1

公开(公告)日：2007-02-01

申请号：US10569929

申请日：2004-08-28

申请人： Young Park ,  Sahng Lee ,  Tae Seo ,  Ho Chang

发明人： Young Park ,  Sahng Lee ,  Tae Seo ,  Ho Chang

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/34 ,  C23C16/4405 ,  C23C16/452

摘要： Provided is a method of depositing a thin film. The method is performed using a thin film deposition apparatus that includes a reaction chamber having a wafer block located in a chamber to heat a loaded wafer up to a predetermined temperature, a top lid covering the chamber to seal the chamber, and shower head coupled under the top lid and having a first injection hole and a second injection hole, through which a first reaction gas and a second reaction gas are injected into the wafer, a reaction gas supplying unit supplying the first and second reaction gases into the reaction chamber, and a gas heating path unit installed on a second conveying line between first and second conveying lines connecting the reaction chamber and the reaction gas supplying unit to heat the gas passing through itself, and the method includes the operations of: loading the wafer on the wafer block; depositing a thin film by injecting the first reaction gas and the second reaction gas that is thermally activated onto the wafer through the first and second injection holes; flowing a heat treatment gas including an H element onto the thin film to reduce impurities included in the thin film; and unloading the wafer, on which the thin film is deposited, from the wafer block. If the second reaction gas has a temperature of T1 before passing through the gas heating path unit and a temperature of T2 after passing through the gas heating path unit, T2 is higher than T1, and if the heat treatment gas has a temperature of T1 before passing through the gas heating path unit and a temperature of T3 after passing through the gas heating path unit, T3 is same as T1 or higher.

摘要翻译： 提供了沉积薄膜的方法。 该方法使用薄膜沉积设备进行，该薄膜沉积设备包括具有位于室中的晶片块以将加载的晶片加热至预定温度的反应室，覆盖室以密封室的顶盖以及耦合在下面的淋浴头 所述顶盖具有第一注入孔和第二注入孔，将第一反应气体和第二反应气体注入到所述晶片中，将所述第一和第二反应气体供给到所述反应室中的反应气体供给单元，以及 气体加热路径单元，安装在连接反应室和反应气体供应单元的第一和第二输送管线之间的第二输送管线上，以加热通过其自身的气体，并且该方法包括以下操作：将晶片装载在晶片块 ; 通过将第一反应气体和热活化的第二反应气体通过第一和第二注入孔注入到晶片上来沉积薄膜; 将包含H元素的热处理气体流到薄膜上以减少薄膜中包含的杂质; 并从晶片块上卸载沉积有薄膜的晶片。 如果第二反应气体在通过气体加热路径单元之前具有T 1的温度，并且在通过气体加热路径单元之后具有T 2的温度，则T 2高于T 1，并且如果热处理气体具有 在通过气体加热路径单元之前的T 1的温度和通过气体加热路径单元的T 3的温度T 3与T 1以上相同。

公开(公告)号：US20060040495A1

公开(公告)日：2006-02-23

申请号：US11205990

申请日：2005-08-17

申请人： Young Park ,  Sahng Lee ,  Tae Seo

发明人： Young Park ,  Sahng Lee ,  Tae Seo

IPC分类号： H01L21/44

CPC分类号： H01L21/02186 ,  C23C16/34 ,  C23C16/45523 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/318 ,  H01L21/76846

摘要： Provided is a method of depositing a metal nitride film having a multilayer structure and different deposition speeds on a substrate. The method is performed by forming a first lower metal nitride film on the substrate at a first deposition speed, forming a second lower metal nitride film on the first lower metal nitride film at a second deposition speed, and forming an upper metal nitride film having a large content of nitrogen (N) on a lower TiN film which is formed by the forming of the first lower metal nitride film and the second lower metal nitride film, at a third deposition speed, to improve stability with respect to exposure to air/moisture. The deposition speed of the metal nitride film having a multi-layer structure satisfies a relationship that the second deposition speed ≧the first deposition speed ≧the third deposition speed.

摘要翻译： 提供了在基板上沉积具有多层结构和不同沉积速度的金属氮化物膜的方法。 该方法通过以第一沉积速度在基板上形成第一下部金属氮化物膜，以第二沉积速度在第一下部金属氮化物膜上形成第二个下部金属氮化物膜，并形成具有 通过以第三沉积速度形成第一下部金属氮化物膜和第二个下部金属氮化物膜而形成的下部TiN膜上的氮（N）含量大，以提高相对于暴露于空气/水分的稳定性 。 具有多层结构的金属氮化物膜的沉积速度满足第二沉积速度> =第一沉积速度> =第三沉积速度的关系。

公开(公告)号：US20060148268A1

公开(公告)日：2006-07-06

申请号：US11260559

申请日：2005-10-27

申请人： Tae Seo ,  Young Park

发明人： Tae Seo ,  Young Park

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/06 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/50 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76862 ,  H01L28/24

摘要： Provided is an in-situ thin-film deposition method in which a TiSix/Ti layer or TiSix/Ti/TiN layer can be continuously deposited. The method serves to deposit a thin layer as a resistive contact and barrier on a loaded wafer and is performed in a thin-film deposition apparatus including a transfer chamber having a robot arm therein and a plurality of chambers installed as a cluster type on the transfer chamber. The method includes depositing a TiSix layer on the wafer by supplying a first reactive gas containing Ti and a second reactive gas containing Si to a first chamber; and transferring the wafer to a second chamber using the transfer chamber and depositing a TiN layer on the TiSix layer.

摘要翻译： 提供了可以连续沉积TiSi x Ti / Ti层或TiSi x Ti / Ti / TiN层的原位薄膜沉积方法。 该方法用于在被加载的晶片上沉积薄层作为电阻接触和阻挡层，并且在薄膜沉积设备中进行，该薄膜沉积设备包括其中具有机器人手臂的传送室和在转印器上作为簇型安装的多个室 房间。 该方法包括通过将含有Ti的第一反应气体和含有Si的第二反应气体供应到第一室来在晶片上沉积TiSi x层， 以及使用所述传送室将所述晶片转移到第二室，并在所述TiSi层上沉积TiN层。

公开(公告)号：US20050010401A1

公开(公告)日：2005-01-13

申请号：US10615268

申请日：2003-07-07

申请人： Ho Sung ,  Dae Hwang ,  Moon Lee ,  Ki Lee ,  Young Park ,  Dae Youn

发明人： Ho Sung ,  Dae Hwang ,  Moon Lee ,  Ki Lee ,  Young Park ,  Dae Youn

IPC分类号： G10L11/06 ,  G10L19/00 ,  G10L19/04

CPC分类号： G10L19/005 ,  G10L19/04 ,  G10L25/93

摘要： Provided are a speech restoration system and method for concealing packet losses. The system includes a demultiplexer that demultiplexes an input bit stream and divides the input bit stream into several packets; a packet loss concealing unit that produces and outputs a linear spectrum pair (LSP) coefficient representing the vocal tract of voice and an excitation signal corresponding to a lost frame, when a packet loss occurs; and a speech restoring unit that synthesizes voice using the packets input from the demultiplexer, outputs the result as restored voice, and synthesizes voice corresponding to a lost packet using the LSP coefficient and the excitation signal input from the packet loss concealing unit and outputs the result as restored voice when the lost packet is detected, wherein the packet loss concealing unit repeats linear prediction coefficients (LPCs) of a last-received valid frame, produces a first excitation signal for the lost frame using a time scale modification (TSM) method, when the lost frame is voiceless, and produces a second excitation signal by re-estimating a gain parameter based on the first excitation signal, when the lost frame is voiced.

摘要翻译： 提供了一种用于隐藏分组丢失的语音恢复系统和方法。 该系统包括解复用器，其对输入比特流进行解复用并将输入比特流分成若干分组; 分组丢失隐藏单元，当发生分组丢失时，产生并输出表示语音的声道的线性频谱对（LSP）系数和对应于丢失帧的激励信号; 以及语音恢复单元，其使用从解复用器输入的分组合成语音，将结果输出为恢复的语音，并且使用从分组丢失隐藏单元输入的LSP系数和激励信号来合成与丢失分组对应的语音，并输出结果 作为在检测到丢失分组时的恢复语音，其中分组丢失隐藏单元重复最后接收的有效帧的线性预测系数（LPC），使用时间缩放修改（TSM）方法产生丢失帧的第一激励信号， 当丢失的帧是无声的，并且当丢失的帧被发音时，通过基于第一激励信号重新估计增益参数来产生第二激励信号。

公开(公告)号：US20080064687A1

公开(公告)日：2008-03-13

申请号：US11727413

申请日：2007-03-26

申请人： Young Suh ,  Uh Oh ,  Hee Kim ,  Jee Lee ,  Hyeung Park ,  Ok Park ,  Yong Lee ,  Young Park ,  Yung Joo ,  Jin Choi ,  Kyung Lim ,  Sun Kim ,  Jin Kim ,  Hyun Koh ,  Joo Moh ,  Yeon Jeong ,  Jung Yi ,  Young Oh

发明人： Young Suh ,  Uh Oh ,  Hee Kim ,  Jee Lee ,  Hyeung Park ,  Ok Park ,  Yong Lee ,  Young Park ,  Yung Joo ,  Jin Choi ,  Kyung Lim ,  Sun Kim ,  Jin Kim ,  Hyun Koh ,  Joo Moh ,  Yeon Jeong ,  Jung Yi ,  Young Oh

IPC分类号： C07C335/02 ,  A61K31/155 ,  A61K31/17 ,  A61K31/215 ,  A61K31/341 ,  A61K31/381 ,  A61K31/40 ,  A61K31/403 ,  A61K31/415 ,  A61K31/425 ,  A61K31/44 ,  A61K31/4965 ,  A61K31/497 ,  A61K31/5375 ,  A61K31/54 ,  A61P1/00 ,  A61P11/00 ,  A61P25/00 ,  C07D403/02 ,  C07D333/22 ,  C07D307/02 ,  C07D279/12 ,  C07D279/06 ,  C07D277/30 ,  C07D265/30 ,  C07D241/04 ,  C07D231/56 ,  C07D211/70 ,  C07D209/18 ,  C07D207/30 ,  A61P9/00 ,  C07C257/00 ,  C07C275/18

CPC分类号： C07D333/42 ,  C07C311/08 ,  C07C311/47 ,  C07C333/20 ,  C07C335/12 ,  C07C335/14 ,  C07C335/20 ,  C07C335/26 ,  C07C2601/14 ,  C07C2602/10 ,  C07D207/323 ,  C07D207/416 ,  C07D207/42 ,  C07D209/08 ,  C07D209/14 ,  C07D213/40 ,  C07D213/61 ,  C07D213/76 ,  C07D217/06 ,  C07D231/14 ,  C07D231/56 ,  C07D233/64 ,  C07D235/14 ,  C07D239/42 ,  C07D241/12 ,  C07D241/24 ,  C07D277/28 ,  C07D295/13 ,  C07D295/215 ,  C07D295/32 ,  C07D307/52 ,  C07D311/58 ,  C07D317/58 ,  C07D333/20

摘要： The present invention relates to novel thiourea derivatives as a modulator for vanilloid receptor (VR) and the pharmaceutical compositions containing the same. As diseases associated with the activity of vanilloid receptor, pain acute pain, chronic pain, neuropathic pain, post-operative pain, migraine, arthralgia, neuropathies, nerve injury, diabetic neuropathy, neurodegeneration, neurotic skin disorder, stroke, urinary bladder hypersensitiveness, irritable bowel syndrome, a respiratory disorder such as asthma or chronic obstructive pulmonary disease, irritation of skin, eye or mucous membrane, fervescence, stomach-duodenal ulcer, inflammatory bowel disease and inflammatory diseases can be enumerated. The present invention provides a pharmaceutical composition for prevention or treatment of these diseases.

摘要翻译： 本发明涉及作为香草素受体（VR）的调节剂的新型硫脲衍生物以及含有它们的药物组合物。 作为与香草素受体活动有关的疾病，疼痛急性疼痛，慢性疼痛，神经性疼痛，手术后疼痛，偏头痛，关节痛，神经病变，神经损伤，糖尿病性神经病变，神经变性，神经性皮肤病，中风，膀胱过敏反应，易怒 肠综合征，哮喘或慢性阻塞性肺疾病等呼吸系统疾病，皮肤，眼睛或粘膜的刺激​​，发热，胃十二指肠溃疡，炎性肠病和炎症性疾病。 本发明提供了用于预防或治疗这些疾病的药物组合物。

公开(公告)号：US20070152655A1

公开(公告)日：2007-07-05

申请号：US11713683

申请日：2007-03-05

申请人： Chul Ham ,  Ho Song ,  Young Park ,  Woo Lim ,  Jae Seo

发明人： Chul Ham ,  Ho Song ,  Young Park ,  Woo Lim ,  Jae Seo

IPC分类号： G01R31/28

CPC分类号： G01R31/2893 ,  G01R31/2867

摘要： A handler for testing semiconductor devices is disclosed which is capable of simplifying the process carried out in an exchanging station, namely, the process of loading/unloading semiconductor devices in/from test trays, and greatly increasing the number of simultaneously testable semiconductor devices. The handler includes a loading station, an unloading station, test trays, an exchanging station comprising a horizontal moving unit for horizontally moving a selected one of the test trays by a predetermined pitch at a working place, a test station in which at least one test board having a plurality of test sockets to be electrically connected with semiconductor devices is mounted, the test station performing a test while connecting the semiconductor devices in one of the test trays, which is fed from the exchanging station to the test station, to the test sockets, device transfer units for transfer the semiconductor devices between the loading station and the exchanging station and between the exchanging station and the unloading station, respectively, and a tray transfer unit for transfer the test trays between the exchanging station and the test station.

公开(公告)号：US20070133272A1

公开(公告)日：2007-06-14

申请号：US11635279

申请日：2006-12-07

申请人： Byoung Yu ,  Seung Lee ,  Sangouk Ryu ,  Sung Yoon ,  Young Park ,  Kyu Choi ,  Nam Lee

发明人： Byoung Yu ,  Seung Lee ,  Sangouk Ryu ,  Sung Yoon ,  Young Park ,  Kyu Choi ,  Nam Lee

IPC分类号： G11C11/00

CPC分类号： H01L45/1213 ,  G11C13/0004 ,  G11C13/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/1666

摘要： Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell.

摘要翻译： 提供了一种相变存储器件，包括：相变存储器单元，包括相变层图案; 激光束聚焦单元将激光束局部聚焦在相变存储单元的相变层图案上; 以及向激光束聚焦单元产生并发射激光束的半导体激光器单元。 因此，相变存储器件中的设定或复位操作使用局部施加的激光束，从而在单位电池的操作期间降低消耗功率并防止存储在相邻单元中的信息的破坏或改变。