公开(公告)号：US20060201428A1

公开(公告)日：2006-09-14

申请号：US11436473

申请日：2006-05-18

申请人： Young Park ,  Keun Yoo ,  Hong Lim ,  Sang Lee ,  Ik Lee ,  Sang Lee ,  Hyun Kyung ,  Jang Bae

发明人： Young Park ,  Keun Yoo ,  Hong Lim ,  Sang Lee ,  Ik Lee ,  Sang Lee ,  Hyun Kyung ,  Jang Bae

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/5096

摘要： Provided is a shower head used in a reactor for thin film deposition, and a method of fabricating the shower head. The shower head for injecting gases onto a wafer mounted on a wafer block includes: a first supply path supplying a first reaction gas and a second supply path supplying a second reaction gas; a first main path connected to the first supply path and in the plane of the shower head, a plurality of first sub-paths diverging from the first main path in the plane of the shower head, a plurality of first diffuse holes formed regularly spaced on a bottom surface of the shower head, and a plurality of first diffuse paths connecting the plurality of first sub-paths to the plurality of first diffuse holes; a second main path connected to the second supply path in the plane of the shower head and not contacting the first main path, a plurality of second sub-paths diverging from the second main path in the plane of the shower head, a plurality of second diffuse holes formed regularly spaced on a bottom surface of the shower head, and a plurality of second diffuse paths connecting the plurality of second sub-paths and the plurality of second diffuse holes; and a sealing unit sealing open ends of the first and second main paths and open ends of the first and second sub-paths formed in the shower head.

摘要翻译： 本发明提供一种用于薄膜沉积用反应器的淋浴喷头及其制造方法。 用于将气体喷射到安装在晶片块上的晶片上的喷头包括：供应第一反应气体的第一供应路径和供应第二反应气体的第二供应路径; 连接到第一供应路径并且在淋浴喷头的平面中的第一主路径，从喷淋头的平面中的第一主路径发散的多个第一子路径，多个第一扩散孔，其规则间隔开地形成 淋浴头的底面以及将多个第一子路径连接到多个第一扩散孔的多个第一漫射路径; 第二主路径，其连接到所述淋浴喷头的平面中的所述第二供应路径，并且不接触所述第一主路径;多个第二子路径，其从所述淋浴喷头的平面中的所述第二主路径发散;多个第二主路径， 在喷淋头的底面上规则间隔地形成的扩散孔以及连接多个第二子路径和多个第二扩散孔的多个第二漫射路径; 以及密封单元，密封形成在所述淋浴喷头中的所述第一和第二子路径的所述第一主路径和所述第二主路径的开放端部。

公开(公告)号：US20050158469A1

公开(公告)日：2005-07-21

申请号：US11080748

申请日：2005-03-15

申请人： Young Park ,  Keun Yoo ,  Hong Lim ,  Sang Lee ,  Ik Lee ,  Sang Lee ,  Hyun Kyung ,  Jang Bae

发明人： Young Park ,  Keun Yoo ,  Hong Lim ,  Sang Lee ,  Ik Lee ,  Sang Lee ,  Hyun Kyung ,  Jang Bae

IPC分类号： H01L21/20 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45538 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/5096

摘要： A reactor for thin film deposition and a thin film deposition method using the reactor are provided. The reactor includes: a reactor block which receives a wafer transferred through a wafer transfer slit; a wafer block which is installed in the reactor block to receive the wafer thereon; a top plate disposed to cover the reactor block; a shower head which is mounted on the bottom of the top plate and diffuses gas toward the wafer; and an exhaust unit which exhausts the gas from the reactor block. A first supply pipeline which supplies a first reactant gas and/or an inert gas to the wafer; a second supply pipeline which supplies a second reactant gas and/or an inert gas to the wafer; and a plasma generator which generates plasma between the wafer block and shower head are included. The shower head includes: a first supply path connected to the first supply pipeline; a plurality of first diffuse holes formed in the bottom of the shower head at a constant interval; a first main path formed parallel to the plane of the shower head and connecting the plurality of first diffuse holes and the first supply path; a second supply path connected to the second supply pipeline; a plurality of second diffuse holes formed in the bottom of the shower head at a constant interval as the plurality of the first diffuse holes; and a second main path formed parallel to the plane of the shower head at a different height from the second main path and connecting the plurality of second diffuse holes and the second supply path.

摘要翻译： 提供了一种用于薄膜沉积的反应器和使用该反应器的薄膜沉积方法。 反应器包括：反应器块，其接收通过晶片传送狭缝转移的晶片; 晶片块，其安装在反应器块中以在其上接收晶片; 设置成覆盖反应器块的顶板; 淋浴头，其安装在顶板的底部并将气体向晶片扩散; 以及从反应器块排出气体的排气单元。 一种向晶片提供第一反应气体和/或惰性气体的第一供应管线; 第二供应管线，其向所述晶片供给第二反应气体和/或惰性气体; 并且包括在晶片块和淋浴头之间产生等离子体的等离子体发生器。 淋浴头包括：连接到第一供应管道的第一供应路径; 以恒定的间隔形成在所述淋浴喷头的底部的多个第一扩散孔; 第一主路径，其平行于所述淋浴头的平面形成，并且连接所述多个第一扩散孔和所述第一供给路径; 连接到第二供应管线的第二供应路径; 多个第二扩散孔，作为多个第一扩散孔以恒定的间隔形成在所述淋浴喷头的底部; 以及第二主路径，其与所述淋浴喷头的平面平行，与所述第二主路径不同的高度，并且连接所述多个第二扩散孔和所述第二供应路径。