利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

4 条记录 (耗时 0.037 秒)

    Plasma based ion implantation system
    1.
    发明申请
    Plasma based ion implantation system 审中-公开
    等离子体离子注入系统

    公开(公告)号：US20080289576A1

    公开(公告)日：2008-11-27

    申请号：US12153703

    申请日：2008-05-22

    申请人： Young dong Lee ,  Yuri Tolmachev ,  Vladimir Volynets ,  Vasily Pashkovskiy ,  Andrey Ushakov ,  Gyeong Su Keum ,  Jae Hyun Han ,  Dong Cheol Kim ,  Hyung Chul Cho

    发明人： Young dong Lee ,  Yuri Tolmachev ,  Vladimir Volynets ,  Vasily Pashkovskiy ,  Andrey Ushakov ,  Gyeong Su Keum ,  Jae Hyun Han ,  Dong Cheol Kim ,  Hyung Chul Cho

    IPC分类号： C23C16/44

    CPC分类号： H01J37/32449 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/3255 ,  H01J37/32862 ,  H01L21/2236

    摘要： A plasma based ion implantation system capable of generating a capacitively coupled plasma having beneficial characteristics for an ion implantation, including the generation of necessary ions and radicals only for an ion implantation process instead of generating an inductively coupled plasma, which generates unnecessary ions and excessively dissociates radicals. The plasma based ion implantation system easily controls plasma ions implanted by cleaning a vacuum chamber, minimizes problems of unnecessary deposition and occurrence of contaminants and increases the number of components used only for the plasma ion implantion by reducing the deposition of polymer layer on a workpiece. The plasma based ion implantation system easily control uniformity of the plasma by using a flat type electrode, thereby easily ensuring uniformity of plasma ions implanted into the workpiece.

    摘要翻译： 一种等离子体离子注入系统，其能够产生具有用于离子注入的有利特性的电容耦合等离子体，包括仅为离子注入工艺产生必需的离子和自由基，而不是产生电感耦合等离子体，其产生不必要的离子并过度离解 激进分子 基于等离子体的离子注入系统容易地通过清洁真空室来控制植入的等离子体离子，从而最小化不必要的沉积和污染物的出现的问题，并且通过减少聚合物层在工件上的沉积而增加仅用于等离子体离子注入的组分的数量。 基于等离子体的离子注入系统通过使用平面型电极容易地控制等离子体的均匀性，从而容易地确保注入到工件中的等离子体离子的均匀性。

    Plasma based ion implantation apparatus
    2.
    发明申请
    Plasma based ion implantation apparatus 审中-公开
    等离子体离子注入装置

    公开(公告)号：US20080023653A1

    公开(公告)日：2008-01-31

    申请号：US11603100

    申请日：2006-11-22

    申请人： Young dong Lee ,  Yuri Tolmachev ,  Vladimir Volynets ,  Vasily Pashkovskiy

    发明人： Young dong Lee ,  Yuri Tolmachev ,  Vladimir Volynets ,  Vasily Pashkovskiy

    IPC分类号： G21K5/08

    CPC分类号： H01J37/321 ,  H01J37/32412

    摘要： A plasma based ion implantation apparatus. The apparatus includes a first chamber in which plasma is generated, a coil antenna to generate the plasma in the first chamber, a second chamber in which ions of the plasma are implanted into a target, the second chamber having an incoming port through which the plasma is diffused from the first chamber to the second chamber, a power source to supply high voltage power to the target in the second chamber, and a grounded conductor positioned to face the target seated on the seating table. The first chamber is formed with a ring shape opening of a predetermined width at an upper periphery of the second chamber to communicate with the second chamber.

    摘要翻译： 一种基于等离子体的离子注入装置。 该装置包括其中产生等离子体的第一室，用于在第一室中产生等离子体的线圈天线，其中将等离子体的离子注入到靶中的第二室，第二室具有入口，等离子体 从所述第一室扩散到所述第二室，电源，用于向所述第二室中的所述目标提供高压电力;以及接地导体，其定位成面对所述坐在所述座台上的所述目标。 第一室在第二室的上周边形成具有预定宽度的环形开口，以与第二室连通。

    Microwave plasma processing apparatus
    3.
    发明授权
    Microwave plasma processing apparatus 有权
    微波等离子体处理装置

    公开(公告)号：US08980047B2

    公开(公告)日：2015-03-17

    申请号：US13174938

    申请日：2011-07-01

    申请人： Jin Hyuk Choi ,  Sang Chul Han ,  Jong Il Kee ,  Young dong Lee ,  Guen Suk Lee ,  Seung Hun Oh

    发明人： Jin Hyuk Choi ,  Sang Chul Han ,  Jong Il Kee ,  Young dong Lee ,  Guen Suk Lee ,  Seung Hun Oh

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/67 ,  H01J37/32

    CPC分类号： H01J37/3222 ,  C23C16/511 ,  H01L21/67069

    摘要： In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to perform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.

    摘要翻译： 根据示例性实施例，等离子体处理设备包括被配置为执行等离子体处理的室，室上的上板，在上板下的天线，天线被配置为在室中产生等离子体， 上板和天线和上绝缘体覆盖天线的顶部，覆盖天线的底部的下绝缘体，被配置为将天线固定到上板的天线支撑环和粘附到天线支撑环的金属垫片 。