公开(公告)号：US20080289576A1

公开(公告)日：2008-11-27

申请号：US12153703

申请日：2008-05-22

申请人： Young dong Lee ,  Yuri Tolmachev ,  Vladimir Volynets ,  Vasily Pashkovskiy ,  Andrey Ushakov ,  Gyeong Su Keum ,  Jae Hyun Han ,  Dong Cheol Kim ,  Hyung Chul Cho

发明人： Young dong Lee ,  Yuri Tolmachev ,  Vladimir Volynets ,  Vasily Pashkovskiy ,  Andrey Ushakov ,  Gyeong Su Keum ,  Jae Hyun Han ,  Dong Cheol Kim ,  Hyung Chul Cho

IPC分类号： C23C16/44

CPC分类号： H01J37/32449 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/3255 ,  H01J37/32862 ,  H01L21/2236

摘要： A plasma based ion implantation system capable of generating a capacitively coupled plasma having beneficial characteristics for an ion implantation, including the generation of necessary ions and radicals only for an ion implantation process instead of generating an inductively coupled plasma, which generates unnecessary ions and excessively dissociates radicals. The plasma based ion implantation system easily controls plasma ions implanted by cleaning a vacuum chamber, minimizes problems of unnecessary deposition and occurrence of contaminants and increases the number of components used only for the plasma ion implantion by reducing the deposition of polymer layer on a workpiece. The plasma based ion implantation system easily control uniformity of the plasma by using a flat type electrode, thereby easily ensuring uniformity of plasma ions implanted into the workpiece.

摘要翻译： 一种等离子体离子注入系统，其能够产生具有用于离子注入的有利特性的电容耦合等离子体，包括仅为离子注入工艺产生必需的离子和自由基，而不是产生电感耦合等离子体，其产生不必要的离子并过度离解 激进分子 基于等离子体的离子注入系统容易地通过清洁真空室来控制植入的等离子体离子，从而最小化不必要的沉积和污染物的出现的问题，并且通过减少聚合物层在工件上的沉积而增加仅用于等离子体离子注入的组分的数量。 基于等离子体的离子注入系统通过使用平面型电极容易地控制等离子体的均匀性，从而容易地确保注入到工件中的等离子体离子的均匀性。

公开(公告)号：US20080061702A1

公开(公告)日：2008-03-13

申请号：US11684199

申请日：2007-03-09

申请人： Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

发明人： Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

IPC分类号： H05H1/00

CPC分类号： H01J37/321 ,  H01J37/32091

摘要： An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.

摘要翻译： 一种可应用于半导体处理的等离子体生成装置和方法。 该装置包括具有限定在其中的等离子体产生空间的腔室，位于腔室内的下部电极，面对下部电极的上部电极，并设置在腔室内以构成第一等离子体发生源，第二等离子体发生源位于较高 位于上电极的下表面，并且设置在上电极的外周;以及电源，用于向第一和第二等离子体发生源供电。

公开(公告)号：US07804250B2

公开(公告)日：2010-09-28

申请号：US11684199

申请日：2007-03-09

申请人： Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

发明人： Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

IPC分类号： H05B6/00

CPC分类号： H01J37/321 ,  H01J37/32091

摘要： An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.

摘要翻译： 一种可应用于半导体处理的等离子体生成装置和方法。 该装置包括具有限定在其中的等离子体产生空间的腔室，位于腔室内的下部电极，面对下部电极的上部电极，并设置在腔室内以构成第一等离子体发生源，第二等离子体发生源位于较高 位于上电极的下表面，并且设置在上电极的外周;以及电源，用于向第一和第二等离子体发生源供电。

公开(公告)号：US20080032427A1

公开(公告)日：2008-02-07

申请号：US11751812

申请日：2007-05-22

申请人： Yung Hee Lee ,  Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy

发明人： Yung Hee Lee ,  Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy

IPC分类号： H01L21/66

CPC分类号： H01L21/67069 ,  H01J37/32412 ,  H01J37/32422 ,  H01L21/67253

摘要： An ion analysis system to measure ion energy distribution at several points during a process of manufacturing a semiconductor circuit includes at least two ion flux sensors combined in a single system to measure an ion energy distribution function, each of the ion flux sensors having cells including an opening of 50 micrometers or less.

摘要翻译： 一种用于在制造半导体电路的过程中测量几个点处的离子能量分布的离子分析系统包括组合在单个系统中以测量离子能量分布函数的至少两个离子通量传感器，每个离子通量传感器具有包括 开口为50微米以下。

公开(公告)号：US20080023653A1

公开(公告)日：2008-01-31

申请号：US11603100

申请日：2006-11-22

申请人： Young dong Lee ,  Yuri Tolmachev ,  Vladimir Volynets ,  Vasily Pashkovskiy

发明人： Young dong Lee ,  Yuri Tolmachev ,  Vladimir Volynets ,  Vasily Pashkovskiy

IPC分类号： G21K5/08

CPC分类号： H01J37/321 ,  H01J37/32412

摘要： A plasma based ion implantation apparatus. The apparatus includes a first chamber in which plasma is generated, a coil antenna to generate the plasma in the first chamber, a second chamber in which ions of the plasma are implanted into a target, the second chamber having an incoming port through which the plasma is diffused from the first chamber to the second chamber, a power source to supply high voltage power to the target in the second chamber, and a grounded conductor positioned to face the target seated on the seating table. The first chamber is formed with a ring shape opening of a predetermined width at an upper periphery of the second chamber to communicate with the second chamber.

摘要翻译： 一种基于等离子体的离子注入装置。 该装置包括其中产生等离子体的第一室，用于在第一室中产生等离子体的线圈天线，其中将等离子体的离子注入到靶中的第二室，第二室具有入口，等离子体 从所述第一室扩散到所述第二室，电源，用于向所述第二室中的所述目标提供高压电力;以及接地导体，其定位成面对所述坐在所述座台上的所述目标。 第一室在第二室的上周边形成具有预定宽度的环形开口，以与第二室连通。

公开(公告)号：US20100048003A1

公开(公告)日：2010-02-25

申请号：US12382326

申请日：2009-03-13

申请人： Doug Yong Sung ,  Vladimir Volynets ,  Andrey Ushakov ,  Min Joon Park ,  Han Soo Shin

发明人： Doug Yong Sung ,  Vladimir Volynets ,  Andrey Ushakov ,  Min Joon Park ,  Han Soo Shin

IPC分类号： H01L21/30 ,  C23C16/54 ,  C23F1/08 ,  H01L21/3065

CPC分类号： H01J37/32174 ,  H01J37/32091

摘要： A plasma processing apparatus using a capacitive coupled plasma (CCP) source requiring a low pressure range of about 25 mT or less and a method thereof are disclosed. Plasma source power may be applied in a pulse mode to either one of upper and lower electrodes in a chamber, which generates plasma and processes a semiconductor substrate, and plasma maintaining power may be continuously applied to the other of the upper and lower electrodes, such that a stable pulse plasma process may be performed in a low pressure range of about 25 mT or less.

摘要翻译： 公开了一种使用需要约25mT以下的低压范围的电容耦合等离子体（CCP）源的等离子体处理装置及其方法。 等离子体源功率可以以脉冲模式施加到室中的上电极和下电极中的任一个，其产生等离子体并处理半导体衬底，并且等离子体维持功率可以连续地施加到上电极和下电极中的另一个，例如 可以在约25mT或更低的低压范围内进行稳定的脉冲等离子体处理。

公开(公告)号：US20160111298A1

公开(公告)日：2016-04-21

申请号：US14819904

申请日：2015-08-06

申请人： Go-jun Kim ,  Vladimir Volynets ,  Sang-jin An ,  Hee-jeon Yang ,  Sang-heon Lee ,  Sung-keun Cho ,  Xinglong Chen ,  In-ho Choi

发明人： Go-jun Kim ,  Vladimir Volynets ,  Sang-jin An ,  Hee-jeon Yang ,  Sang-heon Lee ,  Sung-keun Cho ,  Xinglong Chen ,  In-ho Choi

IPC分类号： H01L21/311

CPC分类号： H01L21/31116 ,  H01J37/32357 ,  H01L21/02046 ,  H01L21/3065

摘要： An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.

摘要翻译： 使用等离子体的蚀刻方法包括通过向至少一个远程等离子体源（RPS）提供处理气体并向所述至少一个RPS施加电力来产生等离子体，并且通过向处理室供应水（H 2 O）和等离子体来蚀刻蚀刻对象 。

公开(公告)号：US07253572B2

公开(公告)日：2007-08-07

申请号：US11288386

申请日：2005-11-29

申请人： Won-taek Park ,  Vladimir Volynets ,  Young-eal Kim

发明人： Won-taek Park ,  Vladimir Volynets ,  Young-eal Kim

IPC分类号： H05H7/00

CPC分类号： H05H1/54 ,  H01J27/14

摘要： An electromagnetic induced accelerator based on coil-turn modulation, including inner and outer cylinders with different diameters, the cylinders being coaxially disposed to form a channel which is a spatial portion therebetween; a discharging coil wound spirally inward along the upper surface of the channel for generating plasma by inducing a magnetic field and secondary current in the channel; and inner and outer coils wound helically around along the inner surface of the inner cylinder and the outer surface of the outer cylinder in parallel with each other for accelerating plasma in the direction of a common axis of the inner and outer cylinders by offsetting the magnetic field induced in the direction of the axis.

摘要翻译： 一种基于线圈匝调制的电磁感应加速器，包括具有不同直径的内圆柱体和外圆柱体，该圆柱体同轴地设置以形成在其间的空间部分的通道; 沿着通道的上表面螺旋地向内缠绕的放电线圈，用于通过在通道中引起磁场和次级电流来产生等离子体; 并且内圈和外圈线圈沿着内筒的内表面和外筒的外表面螺旋地缠绕，彼此平行，以通过抵消磁场的方式在内筒和外筒的共同轴线的方向上加速等离子体 在轴的方向上感应。

公开(公告)号：US20060113928A1

公开(公告)日：2006-06-01

申请号：US11288386

申请日：2005-11-29

申请人： Won-taek Park ,  Vladimir Volynets ,  Young-eal Kim

发明人： Won-taek Park ,  Vladimir Volynets ,  Young-eal Kim

IPC分类号： H05H7/00

CPC分类号： H05H1/54 ,  H01J27/14

摘要： An electromagnetic induced accelerator based on coil-turn modulation, including inner and outer cylinders with different diameters, the cylinders being coaxially disposed to form a channel which is a spatial portion therebetween; a discharging coil wound spirally inward along the upper surface of the channel for generating plasma by inducing a magnetic field and secondary current in the channel; and inner and outer coils wound helically around along the inner surface of the inner cylinder and the outer surface of the outer cylinder in parallel with each other for accelerating plasma in the direction of a common axis of the inner and outer cylinders by offsetting the magnetic field induced in the direction of the axis.

摘要翻译： 一种基于线圈匝调制的电磁感应加速器，包括具有不同直径的内圆柱体和外圆柱体，该圆柱体同轴地设置以形成在其间的空间部分的通道; 沿着通道的上表面螺旋地向内缠绕的放电线圈，用于通过在通道中引起磁场和次级电流来产生等离子体; 并且内圈和外圈线圈沿着内筒的内表面和外筒的外表面螺旋地缠绕，彼此平行，以通过抵消磁场的方式在内筒和外筒的共同轴线的方向上加速等离子体 在轴的方向上感应。

公开(公告)号：US20060113182A1

公开(公告)日：2006-06-01

申请号：US11274247

申请日：2005-11-16

申请人： Won-taek Park ,  Vladimir Volynets

发明人： Won-taek Park ,  Vladimir Volynets

IPC分类号： C23C14/00 ,  B05D1/04 ,  H01T14/00 ,  C23C14/32

CPC分类号： H05H1/54

摘要： A plasma accelerator (300) is disclosed that has three separate sections of coils (301-316) disposed outside the plasma chamber (321). The separate sections of coils include an initial discharge section (309-316), an acceleration section (303-308), and a nozzle section (301-302). Each section of coils is driven by signals of a different frequency to more efficiently discharge and accelerate a plasma in the plasma accelerator (300).

摘要翻译： 公开了一种等离子体加速器（300），其具有设置在等离子体室（321）外部的三个分开的线圈段（301-316）。 线圈的单独部分包括初始排出部分（309-316），加速部分（303-308）和喷嘴部分（301-302）。 线圈的每个部分由不同频率的信号驱动，以更有效地放电并加速等离子体加速器（300）中的等离子体。