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    Auto focusing apparatus and method
    2.
    发明授权
    Auto focusing apparatus and method 有权
    自动对焦装置及方法

    公开(公告)号：US07205543B2

    公开(公告)日：2007-04-17

    申请号：US10959174

    申请日：2004-10-07

    申请人： Yong-Wan Kim ,  Sang-Kil Lee ,  Byung-Am Lee ,  Jin-Woo Lee ,  Hyo-Sang Cho

    发明人： Yong-Wan Kim ,  Sang-Kil Lee ,  Byung-Am Lee ,  Jin-Woo Lee ,  Hyo-Sang Cho

    IPC分类号： G01N23/00

    CPC分类号： H01J37/21 ,  H01J2237/216

    摘要： An auto focusing method and apparatus for determining a focusing evaluation value, comparing the focusing evaluation value with an acceptance level of a preset focusing evaluation value, and iteratively focusing, while widening the depth of focus, when the focusing evaluation value is lower than the acceptance level.

    摘要翻译： 一种自动聚焦方法和装置，用于确定聚焦评价值，将聚焦评价值与预设聚焦评价值的接受水平进行比较，并且在聚焦评价值低于接受度的同时，在扩大聚焦深度的同时进行反复聚焦 水平。

    Method for aligning a wafer and apparatus for performing the same
    4.
    发明申请
    Method for aligning a wafer and apparatus for performing the same 失效
    用于对准晶片的方法和用于执行该晶片的装置

    公开(公告)号：US20050009214A1

    公开(公告)日：2005-01-13

    申请号：US10883711

    申请日：2004-07-06

    申请人： Kyu-Hong Lim ,  Byung-Am Lee ,  Joo-Woo Kim ,  Chang-Hoon Lee

    发明人： Kyu-Hong Lim ,  Byung-Am Lee ,  Joo-Woo Kim ,  Chang-Hoon Lee

    IPC分类号： H01L21/027 ,  G03F7/20 ,  G03F9/00 ,  H01L21/00 ,  H01L21/76

    CPC分类号： G03F9/7092 ,  G03F7/70616

    摘要： In a method of aligning a wafer, which is capable of precisely and rapidly aligning the wafer, and a wafer alignment apparatus using the method of aligning the wafer, a first wafer is aligned to form a first template pattern corresponding to an image of the first wafer. Image data of a second wafer is inputted. A kind of the second wafer is different from that of the first wafer. A second template pattern is formed by transforming the first template pattern in response to the image data of the second wafer. The second wafer is then aligned in response to the second template pattern. Accordingly, the template pattern is formed using the image data to align the wafer although wafers having different images are inspected, thereby rapidly forming the template pattern.

    摘要翻译： 在使用能够精确且快速地对准晶片的晶片和使用对准晶片的方法的晶片对准装置的对准方法中，对准第一晶片以形成对应于第一晶片的图像的第一模板图案 晶圆。 输入第二晶片的图像数据。 一种第二晶片与第一晶片不同。 通过响应于第二晶片的图像数据变换第一模板图案来形成第二模板图案。 然后响应于第二模板图案对准第二晶片。 因此，使用图像数据形成模板图案，以对晶片进行对准，尽管检查具有不同图像的晶片，从而快速形成模板图案。

    Wafer alignment apparatus
    6.
    发明申请
    Wafer alignment apparatus 审中-公开
    晶圆对准装置

    公开(公告)号：US20070252993A1

    公开(公告)日：2007-11-01

    申请号：US11819168

    申请日：2007-06-25

    申请人： Kyu-Hong Lim ,  Byung-Am Lee ,  Joo-Woo Kim ,  Chang-Hoon Lee

    发明人： Kyu-Hong Lim ,  Byung-Am Lee ,  Joo-Woo Kim ,  Chang-Hoon Lee

    IPC分类号： G01B11/00

    CPC分类号： G03F9/7092 ,  G03F7/70616

    摘要： In a method of aligning a wafer, which is capable of precisely and rapidly aligning the wafer, and a wafer alignment apparatus using the method of aligning the wafer, a first wafer is aligned to form a first template pattern corresponding to an image of the first wafer. Image data of a second wafer is inputted. A kind of the second wafer is different from that of the first wafer. A second template pattern is formed by transforming the first template pattern in response to the image data of the second wafer. The second wafer is then aligned in response to the second template pattern. Accordingly, the template pattern is formed using the image data to align the wafer although wafers having different images are inspected, thereby rapidly forming the template pattern.

    摘要翻译： 在使用能够精确且快速地对准晶片的晶片和使用对准晶片的方法的晶片对准装置的对准方法中，对准第一晶片以形成对应于第一晶片的图像的第一模板图案 晶圆。 输入第二晶片的图像数据。 一种第二晶片与第一晶片不同。 通过响应于第二晶片的图像数据变换第一模板图案来形成第二模板图案。 然后响应于第二模板图案对准第二晶片。 因此，使用图像数据形成模板图案，以对晶片进行对准，尽管检查具有不同图像的晶片，从而快速形成模板图案。

    Autofocus method in a scanning electron microscope
    7.
    发明申请
    Autofocus method in a scanning electron microscope 审中-公开
    自动对焦法在扫描电子显微镜下

    公开(公告)号：US20080237461A1

    公开(公告)日：2008-10-02

    申请号：US12079166

    申请日：2008-03-25

    申请人： Jong-Deok Kim ,  Byung-Am Lee ,  Kyung-Ho Kim ,  Byung-Seol Ahn ,  Young-Hun Park ,  Kong-Jung Sa

    发明人： Jong-Deok Kim ,  Byung-Am Lee ,  Kyung-Ho Kim ,  Byung-Seol Ahn ,  Young-Hun Park ,  Kong-Jung Sa

    IPC分类号： G21K7/00

    CPC分类号： H01J37/21 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/216

    摘要： In an autofocus method, an electron beam is scanned onto a subject through a condensing member. A setting condition of the condensing member is changed within a first range. An image evaluation value is measured using a secondary electron current from the subject according to the setting condition within the first range. A second range adjacent to the first range and including the setting condition corresponding to the first maximum is set when a first maximum of the image evaluation value is not a peak value. The setting condition is changed within the second range. An image evaluation value is measured using a secondary electron current according to the setting condition within the second range. The condensing member is set with the setting condition corresponding to a second maximum of the image evaluation value when the second maximum value is the peak value.

    摘要翻译： 在自动聚焦方法中，电子束通过聚光部件被扫描到被摄体上。 聚光部件的设定状态在第一范围内变化。 根据第一范围内的设定条件，使用来自被检体的二次电子流测定图像评价值。 当图像评估值的第一最大值不是峰值时，设置与第一范围相邻并且包括与第一最大值相对应的设置条件的第二范围。 设定条件在第二范围内变化。 根据第二范围内的设定条件，使用二次电子电流测定图像评价值。 当第二最大值是峰值时，聚光构件被设置为与图像评估值的第二最大值相对应的设置条件。

    Method of classifying defects and apparatus for performing the method
    8.
    发明申请
    Method of classifying defects and apparatus for performing the method 审中-公开
    分类缺陷的方法和执行该方法的装置

    公开(公告)号：US20070031982A1

    公开(公告)日：2007-02-08

    申请号：US11462305

    申请日：2006-08-03

    申请人： Young-Kyu Lim ,  Byung-Am Lee ,  Jae-Kyun Ko ,  Song-Sik Lim ,  Young-Woo Lee

    发明人： Young-Kyu Lim ,  Byung-Am Lee ,  Jae-Kyun Ko ,  Song-Sik Lim ,  Young-Woo Lee

    IPC分类号： H01L21/66 ,  G01N21/00

    CPC分类号： G01N21/9501 ,  G01N21/94 ,  G01N2021/8854

    摘要： In a method of classifying defects, actual information with respect to actual defects by each of processes on an object on which the processes are sequentially carried out is obtained. The actual information is accumulated in sequence of the processes to obtain composite information by each of the processes with respect to entire defects that are generated in preceding processes. Added information with respect to defects, which are generated only in each of the processes, among the actual defects is obtained by each of the processes based on the actual information and the composite information. The added information contains information with respect to the defects generated only in each of the processes so that the detected defects may be accurately classified as defects generated in any one among the processes based on the added information.

    摘要翻译： 在对缺陷进行分类的方法中，获得关于依次进行处理的对象上的各处理的实际缺陷的实际信息。 按照前述处理中生成的全部缺陷，通过每个处理获得复合信息的处理顺序累积实际信息。 通过基于实际信息和复合信息的每个处理获得关于在实际缺陷中仅在每个处理中生成的缺陷的信息。 添加的信息包含关于仅在每个处理中产生的缺陷的信息，使得检测到的缺陷可以被准确地分类为基于添加的信息的处理中的任一个中产生的缺陷。

    Method of classifying directional defects on an object and apparatus for performing the same
    9.
    发明申请
    Method of classifying directional defects on an object and apparatus for performing the same 审中-公开
    将物体上的方向性缺陷分类的方法和用于执行其的装置

    公开(公告)号：US20080037857A1

    公开(公告)日：2008-02-14

    申请号：US11739900

    申请日：2007-04-25

    申请人： Young-Kyu Lim ,  Byung-Am Lee ,  Je-Kwon Park ,  Jae-Kyun Ko ,  Kyu Lee ,  Kyoung-Hee Park

    发明人： Young-Kyu Lim ,  Byung-Am Lee ,  Je-Kwon Park ,  Jae-Kyun Ko ,  Kyu Lee ,  Kyoung-Hee Park

    IPC分类号： G06K9/00

    CPC分类号： G06T7/0004 ,  G06T2207/30148

    摘要： In a method of classifying directional defects on an object straight lines are drawn from any defect among all defects on the object toward adjacent defects. At least three defects that are positioned within an allowable angle from the straight lines are classified as directional defects. Thus, only the directional defects among all the defects on the semiconductor substrate may be accurately classified after performing a chemical mechanical polishing (CMP) process, so that the CMP process may be effectively managed.

    摘要翻译： 在对对象上的方向性缺陷进行分类的方法中，直线上的所有缺陷中的所有缺陷中的任何缺陷被绘制成相邻缺陷。 位于距离直线允许的角度内的至少三个缺陷被归类为方向缺陷。 因此，在进行化学机械抛光（CMP）工艺之后，可以将半导体衬底上的所有缺陷中的所有缺陷之间的定向缺陷精确地分类，从而可以有效地管理CMP工艺。