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    Information storage device with domain wall moving unit and magneto-resistive device magnetization arrangement
    3.
    发明授权
    Information storage device with domain wall moving unit and magneto-resistive device magnetization arrangement 有权
    具有域壁移动单元和磁阻装置磁化布置的信息存储装置

    公开(公告)号：US08537506B2

    公开(公告)日：2013-09-17

    申请号：US12801712

    申请日：2010-06-22

    申请人： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

    发明人： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

    IPC分类号： G11B5/39

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H01L43/08

    摘要： An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair of adjacent magnetic domains. The magnetic domain wall moving unit is configured to move at least the magnetic domain wall. The information storage device further includes a magneto-resistive device configured to read information recorded on the magnetic track. The magneto-resistive device includes a pinned layer, a free layer and a separation layer arranged there between. The pinned layer has a fixed magnetization direction. The free layer is disposed between the pinned layer and the magnetic track, and has a magnetization easy axis, which is non-parallel to the magnetization direction of the pinned layer.

    摘要翻译： 信息存储装置包括磁道和磁畴壁移动单元。 磁道在每对相邻磁畴之间具有多个磁畴和磁畴壁。 磁畴壁移动单元构造成至少移动磁畴壁。 信息存储装置还包括被配置为读取记录在磁道上的信息的磁阻装置。 磁阻装置包括钉扎层，自由层和布置在其间的分离层。 被钉扎层具有固定的磁化方向。 自由层设置在被钉扎层和磁迹之间，并且具有与被钉扎层的磁化方向不平行的易磁化轴。

    Magnetic tracks, information storage devices using magnetic domain wall movement, and methods of manufacturing the same
    10.
    发明申请
    Magnetic tracks, information storage devices using magnetic domain wall movement, and methods of manufacturing the same 有权
    磁轨，使用磁畴壁运动的信息存储装置及其制造方法

    公开(公告)号：US20090073859A1

    公开(公告)日：2009-03-19

    申请号：US12155896

    申请日：2008-06-11

    申请人： Young-jin Cho ,  Sung-chul Lee ,  Kwang-seok Kim ,  Ji-young Bae ,  Sun-ae Seo ,  Chang-won Lee

    发明人： Young-jin Cho ,  Sung-chul Lee ,  Kwang-seok Kim ,  Ji-young Bae ,  Sun-ae Seo ,  Chang-won Lee

    IPC分类号： G11B3/00

    CPC分类号： G11C19/0841 ,  G11C11/14

    摘要： Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions.

    摘要翻译： 提供信息存储装置及其制造方法。 信息存储装置的磁道包括其中至少一个磁畴形成区域和至少一个磁畴壁形成区域沿长度方向交替布置的磁性层。 所述至少一个磁畴形成区域相对于所述至少一个磁畴壁形成区域具有不同的磁各向异性能量。 中间层形成在磁性层下面。 中间层包括至少一个第一材料区域和至少一个第二材料区域。 所述至少一个第一材料区域和所述至少一个第二材料区域中的每一个对应于所述至少一个磁畴形成区域和所述至少一个磁畴壁形成区域中的一个。