公开(公告)号：US08144503B2

公开(公告)日：2012-03-27

申请号：US12457908

申请日：2009-06-25

申请人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ji-young Bae ,  Ung-hwan Pi ,  Hyung-soon Shin ,  Seung-jun Lee

发明人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ji-young Bae ,  Ung-hwan Pi ,  Hyung-soon Shin ,  Seung-jun Lee

IPC分类号： G11C11/00

CPC分类号： G11C11/1657 ,  G11B2005/0002 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： An information storage device includes a memory region having a magnetic track and a write/read unit, and a control circuit connected to the memory region. First and second switching devices are connected to both ends of the magnetic track, and a third switching device is connected to the write/read unit. The control circuit controls the first to third switching devices, and supplies operating current to at least one of the magnetic track and the write/read unit.

摘要翻译： 信息存储装置包括具有磁道和写入/读取单元的存储区域以及连接到存储器区域的控制电路。 第一和第二开关装置连接到磁道的两端，并且第三开关装置连接到写/读单元。 控制电路控制第一至第三开关装置，并向至少一个磁道和写/读单元提供工作电流。

公开(公告)号：US20100232055A1

公开(公告)日：2010-09-16

申请号：US12588333

申请日：2009-10-13

申请人： Sung-chul Lee ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae ,  Jin-seong Heo

发明人： Sung-chul Lee ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae ,  Jin-seong Heo

IPC分类号： G11B5/58

CPC分类号： G11B5/584 ,  G11B5/581 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： An information storage device includes a magnetic structure having a buffer track and a plurality of storage tracks connected to the buffer track. A write/read unit is disposed on the magnetic structure, and a plurality of switching devices are respectively connected to the buffer track, the plurality of storage tracks, and the write/read unit. The switching devices that are respectively connected to the buffer track and the storage tracks. The information storage device further includes a circuit configured to supply current to at least one of the magnetic structure and the write/read unit.

摘要翻译： 信息存储装置包括具有缓冲轨道和连接到缓冲轨迹的多个存储轨道的磁结构。 写/读单元设置在磁结构上，并且多个开关装置分别连接到缓冲磁道，多个存储磁道和写/读单元。 分别连接到缓冲器轨道和存储轨道的开关装置。 信息存储装置还包括被配置为向磁结构和写入/读取单元中的至少一个提供电流的电路。

公开(公告)号：US20100008135A1

公开(公告)日：2010-01-14

申请号：US12385859

申请日：2009-04-22

申请人： Young-jin Cho ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Sung-chul Lee ,  Ji-Young Bae

发明人： Young-jin Cho ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Sung-chul Lee ,  Ji-Young Bae

IPC分类号： G11C11/14 ,  G11C11/416

CPC分类号： G01R33/12 ,  G01R33/1207 ,  G01R33/1284 ,  G01R33/1292 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  G11C19/0841

摘要： An information storage device includes a storage node, a write unit configured to write information to a first magnetic domain region of the storage node, and a read unit configured to read information from a second magnetic domain region of the storage node. The information storage device further includes a temporary storage unit configured to temporarily store information read by the read unit, and a write control unit electrically connected to the temporary storage unit and configured to control current supplied to the write unit. The information read from the second magnetic domain region is stored in the temporary storage unit and written to the first magnetic domain region.

摘要翻译： 信息存储装置包括存储节点，写入单元，被配置为向存储节点的第一磁畴区域写入信息;以及读取单元，被配置为从存储节点的第二磁畴区域读取信息。 所述信息存储装置还包括临时存储单元，其被配置为临时存储由所述读取单元读取的信息;以及写入控制单元，电连接到所述临时存储单元并且被配置为控制提供给所述写入单元的电流。 从第二磁畴区域读取的信息存储在临时存储单元中，并写入第一磁畴区域。

公开(公告)号：US08320152B2

公开(公告)日：2012-11-27

申请号：US12385859

申请日：2009-04-22

申请人： Young-jin Cho ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Sung-chul Lee ,  Ji-young Bae

发明人： Young-jin Cho ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Sung-chul Lee ,  Ji-young Bae

IPC分类号： G11C7/00

CPC分类号： G01R33/12 ,  G01R33/1207 ,  G01R33/1284 ,  G01R33/1292 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  G11C19/0841

摘要： An information storage device includes a storage node, a write unit configured to write information to a first magnetic domain region of the storage node, and a read unit configured to read information from a second magnetic domain region of the storage node. The information storage device further includes a temporary storage unit configured to temporarily store information read by the read unit, and a write control unit electrically connected to the temporary storage unit and configured to control current supplied to the write unit. The information read from the second magnetic domain region is stored in the temporary storage unit and written to the first magnetic domain region.

摘要翻译： 信息存储装置包括存储节点，写入单元，被配置为向存储节点的第一磁畴区域写入信息;以及读取单元，被配置为从存储节点的第二磁畴区域读取信息。 所述信息存储装置还包括临时存储单元，其被配置为临时存储由所述读取单元读取的信息;以及写入控制单元，电连接到所述临时存储单元并且被配置为控制提供给所述写入单元的电流。 从第二磁畴区域读取的信息存储在临时存储单元中，并写入第一磁畴区域。

公开(公告)号：US08045371B2

公开(公告)日：2011-10-25

申请号：US12588333

申请日：2009-10-13

申请人： Sung-chul Lee ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pl ,  Ji-young Bae ,  Jin-seong Heo

发明人： Sung-chul Lee ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pl ,  Ji-young Bae ,  Jin-seong Heo

IPC分类号： G11C11/15

CPC分类号： G11B5/584 ,  G11B5/581 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： An information storage device includes a magnetic structure having a buffer track and a plurality of storage tracks connected to the buffer track. A write/read unit is disposed on the magnetic structure, and a plurality of switching devices are respectively connected to the buffer track, the plurality of storage tracks, and the write/read unit. The switching devices that are respectively connected to the buffer track and the storage tracks. The information storage device further includes a circuit configured to supply current to at least one of the magnetic structure and the write/read unit.

摘要翻译： 信息存储装置包括具有缓冲轨道和连接到缓冲轨迹的多个存储轨道的磁结构。 写/读单元设置在磁结构上，并且多个开关装置分别连接到缓冲磁道，多个存储磁道和写/读单元。 分别连接到缓冲器轨道和存储轨道的开关装置。 信息存储装置还包括被配置为向磁结构和写入/读取单元中的至少一个提供电流的电路。

公开(公告)号：US20100157663A1

公开(公告)日：2010-06-24

申请号：US12457908

申请日：2009-06-25

申请人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ji-young Bae ,  Ung-hwan Pi ,  Hyung-soon Shin ,  Seung-jun Lee

发明人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ji-young Bae ,  Ung-hwan Pi ,  Hyung-soon Shin ,  Seung-jun Lee

IPC分类号： G11C11/00 ,  G11C7/00

CPC分类号： G11C11/1657 ,  G11B2005/0002 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： An information storage device includes a memory region having a magnetic track and a write/read unit, and a control circuit connected to the memory region. First and second switching devices are connected to both ends of the magnetic track, and a third switching device is connected to the write/read unit. The control circuit controls the first to third switching devices, and supplies operating current to at least one of the magnetic track and the write/read unit.

摘要翻译： 信息存储装置包括具有磁道和写入/读取单元的存储区域以及连接到存储器区域的控制电路。 第一和第二开关装置连接到磁道的两端，并且第三开关装置连接到写/读单元。 控制电路控制第一至第三开关装置，并向至少一个磁道和写/读单元提供工作电流。

公开(公告)号：US08574730B2

公开(公告)日：2013-11-05

申请号：US12155896

申请日：2008-06-11

申请人： Young-jin Cho ,  Sung-chul Lee ,  Kwang-seok Kim ,  Ji-young Bae ,  Sun-ae Seo ,  Chang-won Lee

发明人： Young-jin Cho ,  Sung-chul Lee ,  Kwang-seok Kim ,  Ji-young Bae ,  Sun-ae Seo ,  Chang-won Lee

IPC分类号： G11B5/76 ,  G11C19/08 ,  H01L35/04

CPC分类号： G11C19/0841 ,  G11C11/14

摘要： Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions.

公开(公告)号：US08537506B2

公开(公告)日：2013-09-17

申请号：US12801712

申请日：2010-06-22

申请人： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

发明人： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H01L43/08

摘要： An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair of adjacent magnetic domains. The magnetic domain wall moving unit is configured to move at least the magnetic domain wall. The information storage device further includes a magneto-resistive device configured to read information recorded on the magnetic track. The magneto-resistive device includes a pinned layer, a free layer and a separation layer arranged there between. The pinned layer has a fixed magnetization direction. The free layer is disposed between the pinned layer and the magnetic track, and has a magnetization easy axis, which is non-parallel to the magnetization direction of the pinned layer.

摘要翻译： 信息存储装置包括磁道和磁畴壁移动单元。 磁道在每对相邻磁畴之间具有多个磁畴和磁畴壁。 磁畴壁移动单元构造成至少移动磁畴壁。 信息存储装置还包括被配置为读取记录在磁道上的信息的磁阻装置。 磁阻装置包括钉扎层，自由层和布置在其间的分离层。 被钉扎层具有固定的磁化方向。 自由层设置在被钉扎层和磁迹之间，并且具有与被钉扎层的磁化方向不平行的易磁化轴。

公开(公告)号：US20110080221A1

公开(公告)日：2011-04-07

申请号：US12801710

申请日：2010-06-22

申请人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Kwang-seok Kim ,  Ji-young Bae

发明人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Kwang-seok Kim ,  Ji-young Bae

IPC分类号： H03B28/00

CPC分类号： H03B15/006

摘要： An oscillator includes: a plurality of free layers and a non-magnetic layer disposed between the plurality of free layers. Each of the plurality of free layers has perpendicular magnetic anisotropy or in-plane magnetic anisotropy. Magnetization directions of the free layers are periodically switched such that a signal within a given frequency band oscillates.

摘要翻译： 振荡器包括：多个自由层和设置在多个自由层之间的非磁性层。 多个自由层中的每一个具有垂直的磁各向异性或面内磁各向异性。 定期切换自由层的磁化方向，使给定频带内的信号振荡。

公开(公告)号：US08525601B2

公开(公告)日：2013-09-03

申请号：US12654703

申请日：2009-12-29

申请人： Sung-chul Lee ,  Mathias Klaui ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae ,  Jin-seong Heo

发明人： Sung-chul Lee ,  Mathias Klaui ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae ,  Jin-seong Heo

IPC分类号： H03B17/00

CPC分类号： H03B15/006 ,  Y10T428/1121

摘要： An oscillator generates a signal using precession of a magnetic moment of a magnetic domain wall. The oscillator includes a free layer having the magnetic domain wall and a fixed layer corresponding to the magnetic domain wall. A non-magnetic separation layer is interposed between the free layer and the fixed layer.

摘要翻译： 振荡器使用磁畴壁的磁矩的进动产生信号。 振荡器包括具有磁畴壁的自由层和对应于磁畴壁的固定层。 非磁性分离层介于自由层和固定层之间。