公开(公告)号：US09748261B2

公开(公告)日：2017-08-29

申请号：US14832285

申请日：2015-08-21

申请人： Jae-goo Lee ,  Young-woo Park

发明人： Jae-goo Lee ,  Young-woo Park

IPC分类号： H01L21/336 ,  H01L27/11582 ,  H01L21/28 ,  H01L27/11575

CPC分类号： H01L27/11582 ,  H01L21/28282 ,  H01L27/11575

摘要： A method of fabricating a memory device includes alternately stacking a plurality of insulating layers and a plurality of sacrificial layers on a substrate, forming a channel hole by etching the insulating layers and the sacrificial layers to expose a partial region of the substrate, forming a channel structure in the channel hole, forming an opening by etching the insulating layers and the sacrificial layers to exposed a portion of the substrate, forming a plurality of side openings that include first side openings and a second side opening by removing the sacrificial layers through the opening, forming gate electrodes to fill the first side openings, and forming a blocking layer to fill the second side opening.

公开(公告)号：US20150008499A1

公开(公告)日：2015-01-08

申请号：US14267909

申请日：2014-05-02

申请人： Jae-goo Lee ,  Young-woo Park ,  Jin-taek Park

发明人： Jae-goo Lee ,  Young-woo Park ,  Jin-taek Park

IPC分类号： H01L29/78 ,  H01L29/792 ,  H01L29/788

CPC分类号： H01L27/11582 ,  H01L23/5226 ,  H01L27/11273 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/785 ,  H01L29/7889 ,  H01L29/7926

摘要： A vertical semiconductor device includes a channel structure extending from a substrate in a first direction perpendicular to an upper surface of the substrate, and a ground selection line, word lines, and a string selection line sequentially formed on a side surface of the channel structure in the first direction to be separated from one another. The channel structure includes a protruding region formed in a side wall portion of the channel structure between the ground selection line and the upper surface of the substrate, the protruding region protruding in a horizontal direction perpendicular to the first direction.

摘要翻译： 垂直半导体器件包括从垂直于衬底的上表面的第一方向上从衬底延伸的沟道结构，以及顺序地形成在沟道结构的侧表面上的接地选择线，字线和串选择线 第一个要相互分离的方向。 通道结构包括形成在通道结构的侧壁部分之间的突出区域，其在接地选择线和衬底的上表面之间，突出区域在与第一方向垂直的水平方向上突出。

公开(公告)号：US08462444B2

公开(公告)日：2013-06-11

申请号：US13086468

申请日：2011-04-14

申请人： Min Heu ,  Young-woo Park

发明人： Min Heu ,  Young-woo Park

IPC分类号： G02B15/14

CPC分类号： G02B15/177

摘要： A zoom lens including, in a sequence from an object side to an image plane side: a first lens group having a negative refractive power; a second lens group having a positive refractive power; a third lens group having a negative refractive power; and a fourth lens group having a positive refractive power. During zooming from a wide angle position to a telephoto position, an interval between the first lens group and the second lens group decreases, an interval between the second lens group and the third lens group increases, and an interval between the third lens group and the fourth lens group decreases. When the location of an object changes from ∞ to a close location, the first lens group is moved toward the object to perform focusing.

摘要翻译： 一种变焦透镜，包括从物体侧到像面侧的顺序：具有负屈光力的第一透镜组; 具有正屈光力的第二透镜组; 具有负屈光力的第三透镜组; 以及具有正屈光力的第四透镜组。 在从广角位置到望远位置的变焦期间，第一透镜组和第二透镜组之间的间隔减小，第二透镜组和第三透镜组之间的间隔增加，并且第三透镜组与第三透镜组之间的间隔 第四透镜组减少。 当物体的位置从∞变为关闭位置时，第一透镜组朝向物体移动以进行聚焦。

公开(公告)号：US08045275B2

公开(公告)日：2011-10-25

申请号：US12889523

申请日：2010-09-24

申请人： Young-woo Park

发明人： Young-woo Park

IPC分类号： G02B15/14

CPC分类号： H04N5/2254 ,  G02B13/04 ,  G02B15/177 ,  H04N5/232 ,  H04N5/23296

摘要： A compact wide-angle zoom lens and an image pickup device having the same. The zoom lens includes a first lens group having a negative refractive power and a second lens group having a positive refractive power in an order from an object side to an image side, performs zooming by varying a distance between the first and second lens groups, and performs focusing by using a first lens closest to the object side in the second lens group.

摘要翻译： 紧凑型广角变焦镜头和具有该变焦镜头的摄像装置。 变焦透镜包括具有负屈光力的第一透镜组和从物体侧到像侧的顺序具有正折光力的第二透镜组，通过改变第一和第二透镜组之间的距离来进行变焦，以及 通过使用最靠近第二透镜组中的物体侧的第一透镜进行聚焦。

公开(公告)号：US20110085246A1

公开(公告)日：2011-04-14

申请号：US12889523

申请日：2010-09-24

申请人： Young-woo Park

发明人： Young-woo Park

IPC分类号： G02B15/14

CPC分类号： H04N5/2254 ,  G02B13/04 ,  G02B15/177 ,  H04N5/232 ,  H04N5/23296

摘要： A compact wide-angle zoom lens and an image pickup device having the same. The zoom lens includes a first lens group having a negative refractive power and a second lens group having a positive refractive power in an order from an object side to an image side, performs zooming by varying a distance between the first and second lens groups, and performs focusing by using a first lens closest to the object side in the second lens group.

摘要翻译： 紧凑型广角变焦镜头和具有该变焦镜头的摄像装置。 变焦透镜包括具有负屈光力的第一透镜组和从物体侧到像侧的顺序具有正折光力的第二透镜组，通过改变第一和第二透镜组之间的距离来进行变焦，以及 通过使用最靠近第二透镜组中的物体侧的第一透镜进行聚焦。

公开(公告)号：US07517762B2

公开(公告)日：2009-04-14

申请号：US11139906

申请日：2005-05-26

申请人： Byung-yoon Kim ,  Won-seong Lee ,  Young-woo Park

发明人： Byung-yoon Kim ,  Won-seong Lee ,  Young-woo Park

IPC分类号： H01L23/62 ,  H01L21/8242

CPC分类号： H01L23/564 ,  H01L21/768 ,  H01L23/5258 ,  H01L23/585 ,  H01L27/10814 ,  H01L27/10894 ,  H01L27/11 ,  H01L2924/0002 ,  Y10S257/906 ,  Y10S257/907 ,  Y10S257/908 ,  H01L2924/00

摘要： A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of moisture through the sidewall of an exposed fuse opening portion, an etch stop layer is formed over a fuse line. A guard ring opening portion is formed using the etch stop layer. The guard ring opening portion is filled with a material for forming the uppermost wiring of multi-level interconnect wirings or the material of a passivation layer, thereby forming the guard ring concurrently with the uppermost interconnect wiring or the passivation layer. Accordingly, permeation of moisture through an interlayer insulating layer or the interface between interlayer insulating layers around the fuse opening portion can be efficiently prevented by a simple process. In addition, the etch stop layer is also formed under the fuse opening portion so that an insulating layer remaining on the fuse line can be controlled to have a predetermined thickness when forming the fuse opening portion, thereby improving the cutting efficiency of fuses.

摘要翻译： 提供了能够防止吸湿的半导体器件的保险丝区域和制造保险丝区域的方法。 当形成用于防止湿气透过露出的保险丝开口部分的侧壁的保护环时，在熔丝线上形成蚀刻停止层。 使用蚀刻停止层形成防护环开口部。 保护环开口部分填充有用于形成多层互连布线的最上布线或钝化层的材料的材料，从而与最上面的布线或钝化层同时形成保护环。 因此，可以通过简单的工艺有效地防止湿气渗透到层间绝缘层或熔断器开口部周围的层间绝缘层之间的界面。 另外，在保险丝开口部分也形成有蚀刻停止层，使得在形成保险丝开口部分时，保留在熔丝线上的绝缘层可以被控制为具有预定的厚度，从而提高了保险丝的切割效率。

公开(公告)号：US07173769B2

公开(公告)日：2007-02-06

申请号：US11248765

申请日：2005-10-12

申请人： Young-woo Park

发明人： Young-woo Park

IPC分类号： G02B15/14 ,  H04N5/262

CPC分类号： G02B15/173

摘要： Provided is a zoom lens optical system suitable for cameras using solid state imaging devices, which is designed compact, has a high zooming ratio and telecentricity, and compensates for color aberration. The zoom lens optical system includes a first lens group having a positive refractive power, for performing zooming, a second lens group having a negative refractive power, for performing zooming, a third lens group having a positive refractive power, for performing zooming, and a fourth lens group having a positive refractive power. The first, second, third, and fourth lens groups are sequentially arranged from an object and satisfy the following equations: f T f W ≥ 8.0 0.2 ≤  L III  f W · f T ≤ 0.6 , where fw denotes the overall focal length of the zoom lens optical system at the wide angle position, fT denotes the overall focal length of the zoom lens optical system at the telephoto position, and LIII denotes the amount of movement of the third lens group from the wide angle position to the telephoto position. Zooming from the wide angle position to a telephoto position is performed so that the distance between the third lens group and the fourth lens group increases.

公开(公告)号：US06844240B2

公开(公告)日：2005-01-18

申请号：US09948799

申请日：2001-09-10

申请人： Young-woo Park ,  Yong-chul Oh ,  Won-Seong Lee

发明人： Young-woo Park ,  Yong-chul Oh ,  Won-Seong Lee

IPC分类号： H01L21/76 ,  H01L21/762

CPC分类号： H01L21/76232

摘要： A structure having trench isolation which protects a nitride liner in the trench during subsequent plasma processing. The structure includes a trench formed in a semiconductor substrate, the trench having sidewalls and a bottom. A thermal oxide layer is formed on the bottom and sidewalls of the trench so as to remove substrate damage caused during etching of the semiconductor substrate to form the trench. A material layer is formed on the thermal oxide layer so as to prevent the bottom and sidewalls of the trench from being oxidized. Then, a protection layer is formed on the oxidation barrier layer. The trench is filled with a trench fill material uniformly with respect to the bottom and sidewalls of the trench.

摘要翻译： 具有沟槽隔离的结构，其在随后的等离子体处理期间保护沟槽中的氮化物衬垫。 该结构包括形成在半导体衬底中的沟槽，沟槽具有侧壁和底部。 在沟槽的底部和侧壁上形成热氧化层，以消除在半导体衬底的蚀刻过程中造成的衬底损伤，形成沟槽。 在热氧化物层上形成材料层，以防止沟槽的底部和侧壁被氧化。 然后，在氧化阻挡层上形成保护层。 沟槽相对于沟槽的底部和侧壁均匀地填充沟槽填充材料。

公开(公告)号：US5320976A

公开(公告)日：1994-06-14

申请号：US956572

申请日：1992-10-05

申请人： Dae-je Chin ,  Young-woo Park

发明人： Dae-je Chin ,  Young-woo Park

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L27/10852

摘要： A method for manufacturing a VLSI semiconductor memory device, in which a cell transistor is formed in the cell array section of a semiconductor substrate, successively, a cell capacitor. Then, a transistor is formed in the periphery circuit section of the substrate. Therefore, access transistors of the cell array section are formed independently from transistors of the peripheral circuit section, optimizing transistor performance.

摘要翻译： 在半导体衬底的单元阵列部分中依次形成单元电容器的VLSI半导体存储器件的制造方法。 然后，在基板的外围电路部分形成晶体管。 因此，单元阵列部分的存取晶体管独立于外围电路部分的晶体管形成，从而优化晶体管的性能。

公开(公告)号：US10263009B2

公开(公告)日：2019-04-16

申请号：US15722216

申请日：2017-10-02

申请人： Chang-hyun Lee ,  Jin-taek Park ,  Young-woo Park

发明人： Chang-hyun Lee ,  Jin-taek Park ,  Young-woo Park

IPC分类号： H01L29/792 ,  H01L27/11582 ,  H01L29/78 ,  H01L29/10 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11524

摘要： Semiconductor devices are provided. The semiconductor devices may include a substrate, a ground selection gate electrode, and a channel structure. The channel structure may extend the ground selection gate electrode in a first direction perpendicular to a top surface of the substrate, and include a channel layer, a channel contact layer, and a stepped portion. The channel contact layer may contact the substrate and include a first width in a second direction perpendicular to the first direction. The channel layer may contact the channel contact layer, include a bottom surface between a bottom surface of the ground selection gate electrode and the top surface of the substrate in the first direction, and include a second width in the second direction different from the first width.