公开(公告)号：US20130188255A1

公开(公告)日：2013-07-25

申请号：US13877446

申请日：2011-09-15

申请人： Yu Kameno ,  Masanobu Ogane ,  Yoji Teramoto

发明人： Yu Kameno ,  Masanobu Ogane ,  Yoji Teramoto

IPC分类号： G02B1/11 ,  C09D5/00

CPC分类号： G02B1/11 ,  B82Y30/00 ,  C01F5/28 ,  C01P2004/34 ,  C01P2004/64 ,  C01P2006/60 ,  C09D5/006 ,  C09D7/70 ,  G02B1/113 ,  Y10T428/268 ,  Y10T428/29

摘要： The present invention provides a method of producing hollow magnesium fluoride particles by performing polymerization at the interface of micelle constituted of a hydrophobic solvent, a hydrophilic solvent, and a surfactant. The invention further provides an antireflection coating having a low refractive index due to the coating by the hollow magnesium fluoride particles and also provides an optical device coated with the antireflection coating and an imaging optical system having the optical device. In the method, micelle is formed from a hydrophobic solvent, a hydrophilic solvent, and a surfactant, and then a fluorine compound and a magnesium compound are dissolved in the micelle solution to polymerize magnesium fluoride at the interface of the micelle.

摘要翻译： 本发明提供一种通过在由疏水性溶剂，亲水性溶剂和表面活性剂构成的胶束的界面进行聚合来制造中空氟化镁颗粒的方法。 本发明还提供了由于中空氟化镁颗粒的涂覆而具有低折射率的抗反射涂层，还提供了涂有抗反射涂层的光学装置和具有光学装置的成像光学系统。 在该方法中，由疏水性溶剂，亲水性溶剂和表面活性剂形成胶束，然后将氟化合物和镁化合物溶解在胶束溶液中，以在胶束的界面聚合氟化镁。

公开(公告)号：US07682213B2

公开(公告)日：2010-03-23

申请号：US11779646

申请日：2007-07-18

申请人： Ryoji Fujiwara ,  Yoji Teramoto

发明人： Ryoji Fujiwara ,  Yoji Teramoto

IPC分类号： H01J9/02 ,  H01J9/04

CPC分类号： B82Y10/00 ,  H01J1/304 ,  H01J1/312 ,  H01J1/316 ,  H01J9/027 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489 ,  Y10S977/846 ,  Y10S977/847 ,  Y10S977/848

摘要： An electron emission device is provided which has sufficient on/off characteristics and is capable of efficiently emitting electrons with a low voltage. An electron emission device includes a substrate, a cathode electrode, a gate electrode, which are arranged on the substrate, an insulation layer covering the surface of the cathode electrode, and a dipole layer formed by terminating the surface of the insulation layer with hydrogen.

摘要翻译： 提供具有足够的开/关特性并且能够有效地以低电压发射电子的电子发射器件。 电子发射器件包括布置在衬底上的衬底，阴极电极，栅电极，覆盖阴极电极表面的绝缘层和通过用氢端接绝缘层的表面形成的偶极层。

公开(公告)号：US20060125370A1

公开(公告)日：2006-06-15

申请号：US11296462

申请日：2005-12-08

申请人： Michiyo Nishimura ,  Yoji Teramoto ,  Ryoji Fujiwara

发明人： Michiyo Nishimura ,  Yoji Teramoto ,  Ryoji Fujiwara

IPC分类号： H01J1/304

CPC分类号： H01J9/027 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/3165

摘要： The invention is to provide a producing method for an electron emitting device of field emission type, having sufficient on/off characteristics and capable of efficient electron emission at a low voltage. There is provided a producing method for an electron emitting device including steps of preparing a plurality of electroconductive particles each covered with an insulation material having a thickness of 10 nm or less at least on a part of a surface of the particle, and forming a dipole layer on a surface of the insulation material covering each of the plurality of electroconductive particles.

公开(公告)号：US20090153013A1

公开(公告)日：2009-06-18

申请号：US12331236

申请日：2008-12-09

申请人： Michiyo Nishimura ,  Ryoji Fujiwara ,  Yoji Teramoto ,  Kazushi Nomura ,  Shunsuke Murakami

发明人： Michiyo Nishimura ,  Ryoji Fujiwara ,  Yoji Teramoto ,  Kazushi Nomura ,  Shunsuke Murakami

IPC分类号： H01J1/02 ,  H01J9/02

CPC分类号： H01J1/30 ,  H01J9/022 ,  H01J31/127 ,  H01J2201/30 ,  H01J2329/0405

摘要： A method for manufacturing an electron-emitting device according to the present invention includes a step of preparing a carbon layer containing conductive metallic particles, a step of oxidizing a portion the conductive metallic particles, and a step of forming a dipole layer on a surface of the carbon layer. An electron-emitting device according to the present invention is manufactured by the manufacturing method for the electron-emitting device. An electron source according to the present invention includes a plurality of the electron-emitting devices. An image display apparatus according to the present invention includes the electron source and a image forming member which forms an image by an electron emitted from the electron source.

摘要翻译： 根据本发明的制造电子发射器件的方法包括制备含有导电金属颗粒的碳层，氧化导电金属颗粒的一部分的步骤和在偶极子层的表面上形成偶极层的步骤 碳层。 根据本发明的电子发射器件通过电子发射器件的制造方法制造。 根据本发明的电子源包括多个电子发射器件。 根据本发明的图像显示装置包括电子源和通过从电子源发射的电子形成图像的图像形成部件。

公开(公告)号：US20090108727A1

公开(公告)日：2009-04-30

申请号：US12255185

申请日：2008-10-21

申请人： Kazushi Nomura ,  Ryoji Fujiwara ,  Michiyo Nishimura ,  Yoji Teramoto ,  Shunsuke Murakami

发明人： Kazushi Nomura ,  Ryoji Fujiwara ,  Michiyo Nishimura ,  Yoji Teramoto ,  Shunsuke Murakami

IPC分类号： H01J1/00 ,  H01J9/02

CPC分类号： H01J31/127 ,  H01J29/467

摘要： An electron-emitting device according to the present invention is characterized by that a gate electrode is located above a cathode electrode; a insulating member is located between the gate electrode and the cathode electrode; and the gate electrode and the insulating member are provided with openings, respectively, the openings being communicated with each other, wherein the insulating member is formed by layering three or more insulating layers including a first insulating layer, which is brought in contact with the gate electrode and has an opening, of which size is approximately the same as the size of the opening of the gate electrode; and a second insulating layer, which is located nearer to the side of the cathode electrode than the first insulating layer and has a larger opening than the opening of the gate electrode.

摘要翻译： 根据本发明的电子发射器件的特征在于栅电极位于阴极上方; 绝缘构件位于栅电极和阴极之间; 并且所述栅电极和所述绝缘构件分别设置有所述开口彼此连通的开口，其中所述绝缘构件通过层叠三个或更多个绝缘层而形成，所述绝缘层包括与所述栅极接触的第一绝缘层 电极，其开口大小与栅电极的开口尺寸大致相同; 以及第二绝缘层，其位于比第一绝缘层更靠近阴极侧的并且具有比栅电极的开口大的开口。

公开(公告)号：US07435689B2

公开(公告)日：2008-10-14

申请号：US11467356

申请日：2006-08-25

申请人： Yoji Teramoto

发明人： Yoji Teramoto

IPC分类号： H01L21/302

CPC分类号： H01J1/304 ,  H01J9/025 ,  H01J29/04 ,  H01J31/127

摘要： A process for fabricating an electron emitting device comprises a cathode electrode and a gate electrode are laminated through an insulating layer and an electron emitting film on the cathode electrode located in a gate hole penetrating through the gate electrode and the insulating layer. Wherein, a second hole penetrating through at least the gate electrode between the insulating layer and the gate electrode is juxtaposed with a first hole as a gate hole is formed, and the insulating layer between the second hole and the first hole in which the electron emitting film is deposited to the inner wall surface is etched until the first hole and the second hole are communicated with each other. Thereby, electron emitting film material is removed form the hole to reduce a leakage current.

摘要翻译： 一种用于制造电子发射器件的方法，包括：阴极电极和栅极电极通过绝缘层和位于穿过栅电极和绝缘层的栅极孔中的阴极电极上的电子发射膜层压。 其中，形成绝缘层和栅极之间的至少贯穿至少栅电极的第二孔与形成有栅极孔的第一孔并置，第二孔与第一孔之间的绝缘层，其中电子发射 膜被沉积到内壁表面被蚀刻直到第一孔和第二孔彼此连通。 由此，从孔中去除电子发射膜材料以减少漏电流。

公开(公告)号：US07074102B2

公开(公告)日：2006-07-11

申请号：US10758193

申请日：2004-01-16

申请人： Yoji Teramoto

发明人： Yoji Teramoto

IPC分类号： H01J9/00

CPC分类号： H01J9/025

摘要： A method of manufacturing an electron-emitting device, which has an easy manufacturing process and preferably controls an electron beam diameter. The method includes: arranging on a substrate a member comprising a first electroconductive layer blanketing the substrate, a layer containing at least one of materials forming an electron-emitting element blanketing the first electroconductive layer, a protective layer blanketing the layer containing at least one of materials, a second electroconductive layer blanketing the protective layer, an insulating layer blanketing the second electroconductive layer, and a third electroconductive layer blanketing the insulating layer; forming an opening, which extends from a surface of the third electroconductive layer to the protective layer, by dry etching; and wet-etching the protective layer through the opening to expose a portion of the layer containing at least one of the materials forming the electron-emitting element.

摘要翻译： 一种制造电子发射器件的方法，其具有容易的制造工艺，并且优选地控制电子束直径。 该方法包括：在衬底上布置包括覆盖衬底的第一导电层的构件，包含形成覆盖第一导电层的电子发射元件的材料中的至少一种的层;保护层，覆盖包含至少一个 覆盖保护层的第二导电层，覆盖第二导电层的绝缘层和覆盖绝缘层的第三导电层; 形成通过干蚀刻从第三导电层的表面延伸到保护层的开口; 并且通过所述开口对所述保护层进行湿蚀刻，以暴露包含形成所述电子发射元件的至少一种材料的所述层的一部分。

公开(公告)号：US20110081819A1

公开(公告)日：2011-04-07

申请号：US12896766

申请日：2010-10-01

申请人： Akiko Kitao ,  Yoji Teramoto

发明人： Akiko Kitao ,  Yoji Teramoto

IPC分类号： H01J9/12

CPC分类号： H01J9/027 ,  H01J1/316 ,  H01J31/127

摘要： As many protrusions as possible that contribute to electron emission are formed in a controlled manner and the protrusions are easily formed over a large area in a controlled manner. A conductive film composed of a conductive material constituting a cathode is formed by sputtering at a total pressure of 1.0 Pa or more and 2.8 Pa or less, and etching treatment is performed on the conductive film to form the cathode having a plurality of protrusions on the surface thereof.

摘要翻译： 尽可能多地以有控制的方式形成有助于电子发射的突起，并且可以以受控的方式容易地在大面积上形成突起。 由构成阴极的导电材料构成的导电膜通过在1.0Pa以上且2.8Pa以下的总压力下进行溅射而形成，对该导电膜进行蚀刻处理，形成具有多个突起的阴极 表面。

公开(公告)号：US08125470B2

公开(公告)日：2012-02-28

申请号：US12302330

申请日：2008-02-29

申请人： Kazushi Nomura ,  Ryoji Fujiwara ,  Michiyo Nishimura ,  Yoji Teramoto ,  Shunsuke Murakami

发明人： Kazushi Nomura ,  Ryoji Fujiwara ,  Michiyo Nishimura ,  Yoji Teramoto ,  Shunsuke Murakami

IPC分类号： G06F3/038 ,  G09G5/00 ,  G09G3/30

CPC分类号： H01J29/04 ,  H01J1/304 ,  H01J31/127

摘要： There is provided an electron source including: an insulating substrate; a first wiring that is arranged on the insulating substrate; a second wiring that is arranged on the insulating substrate and intersects with the first wiring; and an electron-emitting device having a cathode electrode provided with an electron-emitting member and a gate electrode arranged above the cathode electrode, which is arranged on the insulating substrate and is separated from an intersecting portion of the first wiring with the second wiring; wherein the first wiring is arranged on the second wiring via an insulating layer; the gate electrode is provided with a plurality of slit-like openings that is arranged in substantially parallel at intervals; and the opening is arranged so that an extended line in a longitudinal direction thereof intersects with the first wiring.

摘要翻译： 提供一种电子源，包括：绝缘衬底; 布置在所述绝缘基板上的第一布线; 布置在所述绝缘基板上并与所述第一布线相交的第二布线; 以及电子发射器件，其具有设置有电子发射部件的阴极和布置在阴极电极上方的栅电极，该阴极设置在绝缘基板上，并与第一布线的交叉部分与第二布线分离; 其中所述第一布线经由绝缘层布置在所述第二布线上; 栅电极设置有多个狭缝状开口，其间隔地基本平行地布置; 并且开口被布置成使得其纵向方向上的延伸线与第一布线相交。

公开(公告)号：US07583016B2

公开(公告)日：2009-09-01

申请号：US11296462

申请日：2005-12-08

申请人： Michiyo Nishimura ,  Yoji Teramoto ,  Ryoji Fujiwara

发明人： Michiyo Nishimura ,  Yoji Teramoto ,  Ryoji Fujiwara

IPC分类号： H01J1/304 ,  H01J1/02

CPC分类号： H01J9/027 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/3165

摘要： The invention is to provide a producing method for an electron emitting device of field emission type, having sufficient on/off characteristics and capable of efficient electron emission at a low voltage. There is provided a producing method for an electron emitting device including steps of preparing a plurality of electroconductive particles each covered with an insulation material having a thickness of 10 nm or less at least on a part of a surface of the particle, and forming a dipole layer on a surface of the insulation material covering each of the plurality of electroconductive particles.

摘要翻译： 本发明提供一种场发射型电子发射器件的制造方法，其具有足够的导通/截止特性并能够在低电压下有效地发射电子。 提供了一种用于电子发射器件的制造方法，包括以下步骤：至少在所述粒子的一部分表面上制备多个导电粒子，所述多个导电粒子被覆盖有厚度为10nm以下的绝缘材料，并形成偶极子 在绝缘材料的表面上覆盖多个导电颗粒中的每一个。