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    Controlled release multidrug formulations for spinal cord injury
    2.
    发明授权
    Controlled release multidrug formulations for spinal cord injury 有权
    用于脊髓损伤的控释多药制剂

    公开(公告)号：US08333962B2

    公开(公告)日：2012-12-18

    申请号：US12548434

    申请日：2009-08-27

    申请人： Yu-Chao Wang ,  Yi-Ting Wu ,  Chung-Shi Yang

    发明人： Yu-Chao Wang ,  Yi-Ting Wu ,  Chung-Shi Yang

    IPC分类号： A61K38/18 ,  A61K38/43 ,  A61K9/52 ,  A61K9/58 ,  A61K31/721 ,  A61K31/722 ,  A61K47/30 ,  C07K14/475 ,  C07K14/50

    CPC分类号： A61K38/185 ,  A61K9/0085 ,  A61K9/5153 ,  A61K31/7076 ,  A61K38/1825 ,  A61K38/2278 ,  A61K38/45 ,  A61K38/51 ,  A61K45/06 ,  A61K2300/00

    摘要： A controlled release multidrug formulation for improving locomotor recovery after spinal cord injury comprising: (a) a first composition comprising a first bioactive agent, encapsulated within a first polymeric particle; (b) a second composition comprising a second bioactive agent, encapsulated within a second polymeric particle, wherein the second polymeric particle is encapsulated within the first polymeric particle; and (c) a third composition comprising a third bioactive agent, encapsulated within either the first or the second polymeric particle, wherein the second composition is released subsequently to the release of the first composition, and wherein the first bioactive agent is a neurotrophic factor, the second bioactive agent is a collagen synthesis inhibitor, and the third bioactive agent is selected from the group consisting of cyclic AMP (cAMP), an adenylate cyclase activator and a Rho inhibitor.

    摘要翻译： 一种用于改善脊髓损伤后运动恢复的控释多药物制剂，包括：（a）第一组合物，其包含封装在第一聚合物颗粒内的第一生物活性剂; （b）第二组合物，其包含封装在第二聚合物颗粒内的第二生物活性剂，其中所述第二聚合物颗粒包封在所述第一聚合物颗粒内; 和（c）第三组合物，其包含封装在第一或第二聚合物颗粒内的第三生物活性剂，其中第二组合物随后释放出第一组合物，其中第一生物活性剂是神经营养因子， 第二生物活性剂是胶原合成抑制剂，第三生物活性剂选自环AMP（cAMP），腺苷酸环化酶活化剂和Rho抑制剂。

    CONTROLLED RELEASE MULTIDRUG FORMULATIONS FOR SPINAL CORD INJURY
    4.
    发明申请
    CONTROLLED RELEASE MULTIDRUG FORMULATIONS FOR SPINAL CORD INJURY 有权
    用于脊髓损伤的控制释放多药物制剂

    公开(公告)号：US20110052711A1

    公开(公告)日：2011-03-03

    申请号：US12548434

    申请日：2009-08-27

    申请人： Yu-Chao Wang ,  Yi-Ting Wu ,  Chung-Shi Yang

    发明人： Yu-Chao Wang ,  Yi-Ting Wu ,  Chung-Shi Yang

    IPC分类号： A61K38/16 ,  A61K9/14 ,  A61P1/00 ,  A61P19/00

    CPC分类号： A61K38/185 ,  A61K9/0085 ,  A61K9/5153 ,  A61K31/7076 ,  A61K38/1825 ,  A61K38/2278 ,  A61K38/45 ,  A61K38/51 ,  A61K45/06 ,  A61K2300/00

    摘要： A controlled release multidrug formulation for improving locomotor recovery after spinal cord injury comprising: (a) a first composition comprising a first bioactive agent, encapsulated within a first polymeric particle; (b) a second composition comprising a second bioactive agent, encapsulated within a second polymeric particle, wherein the second polymeric particle is encapsulated within the first polymeric particle; and (c) a third composition comprising a third bioactive agent, encapsulated within either the first or the second polymeric particle, wherein the second composition is released subsequently to the release of the first composition, and wherein the first bioactive agent is a neurotrophic factor, the second bioactive agent is a collagen synthesis inhibitor, and the third bioactive agent is selected from the group consisting of cyclic AMP (cAMP), an adenylate cyclase activator and a Rho inhibitor.

    摘要翻译： 一种用于改善脊髓损伤后运动恢复的控释多药物制剂，包括：（a）第一组合物，其包含封装在第一聚合物颗粒内的第一生物活性剂; （b）第二组合物，其包含封装在第二聚合物颗粒内的第二生物活性剂，其中所述第二聚合物颗粒包封在所述第一聚合物颗粒内; 和（c）第三组合物，其包含封装在第一或第二聚合物颗粒内的第三生物活性剂，其中第二组合物随后释放出第一组合物，其中第一生物活性剂是神经营养因子， 第二生物活性剂是胶原合成抑制剂，第三生物活性剂选自环AMP（cAMP），腺苷酸环化酶活化剂和Rho抑制剂。

    Semiconductor Package and Method for Making the Same
    5.
    发明申请
    Semiconductor Package and Method for Making the Same 有权
    半导体封装及其制作方法

    公开(公告)号：US20110285006A1

    公开(公告)日：2011-11-24

    申请号：US12783104

    申请日：2010-05-19

    申请人： Chao-Fu Weng ,  Yi-Ting Wu

    发明人： Chao-Fu Weng ,  Yi-Ting Wu

    IPC分类号： H01L23/538 ,  H01L21/78 ,  H01L21/50

    CPC分类号： H01L23/48 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L25/0652 ,  H01L2224/24227 ,  H01L2225/06517 ,  H01L2225/06531 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/15153 ,  H01L2924/15165

    摘要： The present invention relates to a semiconductor package and method for making the same. The semiconductor package includes a silicon substrate unit, a bridge chip and at least one active chip. The silicon substrate unit has a cavity and a plurality of vias. The bridge chip is attached to the cavity and has a plurality of non-contact pads. The active chip is disposed above the bridge chip and has a plurality of non-contact pads and a plurality of conducting elements. The conducting elements of the active chip contact the vias of the silicon substrate unit, the non-contact pads of the active chip face but are not in physical contact with the non-contact pads of the bridge chip, so as to provide proximity communication between the active chip and the bridge chip.

    摘要翻译： 半导体封装及其制造方法技术领域本发明涉及半导体封装及其制造方法。 半导体封装包括硅衬底单元，桥芯片和至少一个有源芯片。 硅衬底单元具有空腔和多个通孔。 桥芯片附接到腔体并具有多个非接触垫片。 有源芯片设置在桥芯片上方并且具有多个非接触焊盘和多个导电元件。 有源芯片的导电元件接触硅衬底单元的通孔，有源芯片面的非接触焊盘，但不与桥芯片的非接触焊盘物理接触，以便提供 有源芯片和桥芯片。

    Light emitting device and method of manufacturing the same
    6.
    发明授权
    Light emitting device and method of manufacturing the same 有权
    发光元件及其制造方法

    公开(公告)号：US08242527B2

    公开(公告)日：2012-08-14

    申请号：US12728377

    申请日：2010-03-22

    申请人： Si-Chen Lee ,  Yu-Wei Jiang ,  Yi-Ting Wu ,  Ming-Wei Tsai ,  Pei-En Chang

    发明人： Si-Chen Lee ,  Yu-Wei Jiang ,  Yi-Ting Wu ,  Ming-Wei Tsai ,  Pei-En Chang

    IPC分类号： H01L33/00

    CPC分类号： H05B33/10 ,  H05B33/22

    摘要： A light emitting device for generating infrared light includes a substrate, a first metal layer, a dielectric layer and a second metal layer. The substrate has a first surface. The first metal layer is formed on the first surface of the substrate. The dielectric layer is formed on the first metal layer. A thickness of the dielectric layer is greater than a particular value. The second metal layer is formed on the dielectric layer. When the light emitting device is heated, the dielectric layer has a waveguide mode such that the infrared light generated by the light emitting device can be transmitted in the dielectric layer. A wavelength of the infrared light generated in the waveguide mode relates to the thickness of the dielectric layer.

    摘要翻译： 用于产生红外光的发光装置包括基板，第一金属层，电介质层和第二金属层。 衬底具有第一表面。 第一金属层形成在基板的第一表面上。 介电层形成在第一金属层上。 电介质层的厚度大于特定值。 第二金属层形成在电介质层上。 当发光器件被加热时，电介质层具有波导模式，使得由发光器件产生的红外光可以在电介质层中传输。 在波导模式中产生的红外光的波长与介电层的厚度有关。

    Method for fabricating a mask ROM
    7.
    发明授权
    Method for fabricating a mask ROM 有权
    掩模ROM的制造方法

    公开(公告)号：US06586303B2

    公开(公告)日：2003-07-01

    申请号：US09683246

    申请日：2001-12-05

    申请人： Yi-Ting Wu

    发明人： Yi-Ting Wu

    IPC分类号： H01L218247

    CPC分类号： H01L27/11253 ,  H01L21/743 ,  H01L27/112

    摘要： A patterned photoresist layer is coated onto a semiconductor substrate. Then a doped region is formed in the semiconductor substrate not covered by the patterned photoresist layer. In addition, a semiconductor process is performed to trim the patterned photoresist layer, and a lightly doped drain (LDD) region is formed in the region of the semiconductor substrate next to the doped region. The doped region and the LDD region constitute the buried bit lines of the mask ROM. Finally, the photoresist layer is stripped.

    摘要翻译： 将图案化的光致抗蚀剂层涂覆到半导体衬底上。 然后，在未被图案化光致抗蚀剂层覆盖的半导体衬底中形成掺杂区域。 此外，执行半导体工艺以修整图案化的光致抗蚀剂层，并且在半导体衬底的与掺杂区域相邻的区域中形成轻掺杂漏极（LDD）区域。 掺杂区域和LDD区域构成掩模ROM的掩埋位线。 最后，剥离光致抗蚀剂层。

    Semiconductor package and method for making the same
    8.
    发明授权
    Semiconductor package and method for making the same 有权
    半导体封装及其制造方法

    公开(公告)号：US08288854B2

    公开(公告)日：2012-10-16

    申请号：US12783104

    申请日：2010-05-19

    申请人： Chao-Fu Weng ,  Yi-Ting Wu

    发明人： Chao-Fu Weng ,  Yi-Ting Wu

    IPC分类号： H01L23/538 ,  H01L21/78 ,  H01L21/50

    CPC分类号： H01L23/48 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L25/0652 ,  H01L2224/24227 ,  H01L2225/06517 ,  H01L2225/06531 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/15153 ,  H01L2924/15165

    摘要： The present invention relates to a semiconductor package and method for making the same. The semiconductor package includes a silicon substrate unit, a bridge chip and at least one active chip. The silicon substrate unit has a cavity and a plurality of vias. The bridge chip is attached to the cavity and has a plurality of non-contact pads. The active chip is disposed above the bridge chip and has a plurality of non-contact pads and a plurality of conducting elements. The conducting elements of the active chip contact the vias of the silicon substrate unit, the non-contact pads of the active chip face but are not in physical contact with the non-contact pads of the bridge chip, so as to provide proximity communication between the active chip and the bridge chip.

    摘要翻译： 半导体封装及其制造方法技术领域本发明涉及半导体封装及其制造方法。 半导体封装包括硅衬底单元，桥芯片和至少一个有源芯片。 硅衬底单元具有空腔和多个通孔。 桥芯片附接到腔体并具有多个非接触垫片。 有源芯片设置在桥芯片上方并且具有多个非接触焊盘和多个导电元件。 有源芯片的导电元件接触硅衬底单元的通孔，有源芯片面的非接触焊盘，但不与桥芯片的非接触焊盘物理接触，以便提供 有源芯片和桥芯片。

    Light Emitting Device and Method of Manufacturing the Same
    9.
    发明申请
    Light Emitting Device and Method of Manufacturing the Same 有权
    发光装置及其制造方法

    公开(公告)号：US20100213492A1

    公开(公告)日：2010-08-26

    申请号：US12728377

    申请日：2010-03-22

    申请人： Si-Chen Lee ,  Yu-Wei Jiang ,  Yi-Ting Wu ,  Ming-Wei Tsai ,  Pei-En Chang

    发明人： Si-Chen Lee ,  Yu-Wei Jiang ,  Yi-Ting Wu ,  Ming-Wei Tsai ,  Pei-En Chang

    IPC分类号： H01L33/48 ,  H01L33/00

    CPC分类号： H05B33/10 ,  H05B33/22

    摘要： A light emitting device for generating infrared light includes a substrate, a first metal layer, a dielectric layer and a second metal layer. The substrate has a first surface. The first metal layer is formed on the first surface of the substrate. The dielectric layer is formed on the first metal layer. A thickness of the dielectric layer is greater than a particular value. The second metal layer is formed on the dielectric layer. When the light emitting device is heated, the dielectric layer has a waveguide mode such that the infrared light generated by the light emitting device can be transmitted in the dielectric layer. A wavelength of the infrared light generated in the waveguide mode relates to the thickness of the dielectric layer.

    摘要翻译： 用于产生红外光的发光装置包括基板，第一金属层，电介质层和第二金属层。 衬底具有第一表面。 第一金属层形成在基板的第一表面上。 介电层形成在第一金属层上。 电介质层的厚度大于特定值。 第二金属层形成在电介质层上。 当发光器件被加热时，电介质层具有波导模式，使得由发光器件产生的红外光可以在电介质层中传输。 在波导模式中产生的红外光的波长与介电层的厚度有关。