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    Magnetoresistive structures and fabrication methods
    1.
    发明授权
    Magnetoresistive structures and fabrication methods 有权
    磁阻结构和制造方法

    公开(公告)号：US07443638B2

    公开(公告)日：2008-10-28

    申请号：US10907974

    申请日：2005-04-22

    申请人： Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

    发明人： Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

    IPC分类号： G11B5/39 ,  G11B5/33

    CPC分类号： G11B5/3929 ,  B82Y10/00 ,  G11B2005/3996

    摘要： Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted coupling to induce a perpendicular magnetization alignment between the free layer and the pinned layer. Ferromagnetic layers of the free and pinned layers are exchange-coupled using antiferromagnetic layers having substantially parallel exchange-biasing directions. Thus, embodiments can be realized that have antiferromagnetic layers formed of a same material and/or having a same blocking temperature. At least one of the free and pinned layers further includes a second ferromagnetic layer and an insulating layer, such as a NOL, between the two ferromagnetic layers. The insulating layer causes twisted coupling between the two ferromagnetic layers, rotating the magnetization direction of one 90 degrees relative to the magnetization direction of the other.

    摘要翻译： 这里公开了一种例如在磁传感器中用作自旋阀或GMR堆叠的磁阻结构及其制造方法。 磁阻结构使用扭转耦合来引起自由层和被钉扎层之间的垂直磁化对准。 使用具有基本平行的交换偏压方向的反铁磁层来交换耦合自由和被钉扎层的铁磁层。 因此，可以实现具有由相同材料形成的反铁磁层和/或具有相同阻挡温度的实施例。 自由和被钉扎层中的至少一个还包括在两个铁磁层之间的第二铁磁层和绝缘层，例如NOL。 绝缘层引起两个铁磁层之间的扭转耦合，使相对于另一个的磁化方向旋转90度的磁化方向。

    Magnetoresistive Structures and Fabrication Methods
    2.
    发明申请
    Magnetoresistive Structures and Fabrication Methods 有权
    磁阻结构及制作方法

    公开(公告)号：US20060238925A1

    公开(公告)日：2006-10-26

    申请号：US10907974

    申请日：2005-04-22

    申请人： Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

    发明人： Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/3929 ,  B82Y10/00 ,  G11B2005/3996

    摘要： Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted coupling to induce a perpendicular magnetization alignment between the free layer and the pinned layer. Ferromagnetic layers of the free and pinned layers are exchange-coupled using antiferromagnetic layers having substantially parallel exchange-biasing directions. Thus, embodiments can be realized that have antiferromagnetic layers formed of a same material and/or having a same blocking temperature. At least one of the free and pinned layers further includes a second ferromagnetic layer and an insulating layer, such as a NOL, between the two ferromagnetic layers. The insulating layer causes twisted coupling between the two ferromagnetic layers, rotating the magnetization direction of one 90 degrees relative to the magnetization direction of the other.

    摘要翻译： 这里公开了一种例如在磁传感器中用作自旋阀或GMR堆叠的磁阻结构及其制造方法。 磁阻结构使用扭转耦合来引起自由层和被钉扎层之间的垂直磁化对准。 使用具有基本平行的交换偏压方向的反铁磁层来交换耦合自由和被钉扎层的铁磁层。 因此，可以实现具有由相同材料形成的反铁磁层和/或具有相同阻挡温度的实施例。 自由和被钉扎层中的至少一个还包括在两个铁磁层之间的第二铁磁层和绝缘层，例如NOL。 绝缘层引起两个铁磁层之间的扭转耦合，使相对于另一个的磁化方向旋转90度的磁化方向。

    Method for forming a reduced active area in a phase change memory structure
    4.
    发明授权
    Method for forming a reduced active area in a phase change memory structure 有权
    在相变存储器结构中形成减小的有效面积的方法

    公开(公告)号：US08153471B2

    公开(公告)日：2012-04-10

    申请号：US12945860

    申请日：2010-11-14

    申请人： Li-Shyue Lai ,  Chao-Hsiung Wang ,  Denny Tang ,  Wen-Chin Lin

    发明人： Li-Shyue Lai ,  Chao-Hsiung Wang ,  Denny Tang ,  Wen-Chin Lin

    IPC分类号： H01L21/06

    CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/1691

    摘要： A phase change memory structure and method for forming the same, the method including providing a substrate comprising a conductive area; forming a spacer having a partially exposed sidewall region at an upper portion of the spacer defining a phase change memory element contact area; and, wherein the spacer bottom portion partially overlaps the conductive area. Both these two methods can reduce active area of a phase change memory element, therefore, reducing a required phase changing electrical current.

    摘要翻译： 一种相变存储器结构及其形成方法，所述方法包括提供包括导电区域的衬底; 在间隔物的上部形成具有部分暴露的侧壁区域的间隔物，其限定相变存储元件接触区域; 并且其中所述间隔件底部部分与所述导电区域重叠。 这两种方法都可以减少相变存储元件的有效面积，从而减少所需的相变电流。

    MRAM arrays and methods for writing and reading magnetic memory devices
    5.
    发明申请
    MRAM arrays and methods for writing and reading magnetic memory devices 有权
    MRAM阵列和写入和读取磁存储器件的方法

    公开(公告)号：US20070091672A1

    公开(公告)日：2007-04-26

    申请号：US11610739

    申请日：2006-12-14

    申请人： Wen-Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chao-Hsiung Wang ,  Fan-Shi Lai

    发明人： Wen-Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chao-Hsiung Wang ,  Fan-Shi Lai

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1673

    摘要： A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying a magnetic field to the select memory cells, sampling a second signal of the selected read line, and comparing the first and second signals to determine a logic state of the select memory cells.

    摘要翻译： 一种用于写入和读取磁存储单元的非破坏性技术和相关阵列，包括对与选择存储器单元相对应的所选读取行的第一信号进行采样，向选择存储单元施加磁场，对所选择的读取的第二信号 并且比较第一和第二信号以确定选择存储器单元的逻辑状态。

    System and method for passing high energy particles through a mask
    7.
    发明申请
    System and method for passing high energy particles through a mask 有权
    将高能粒子通过掩模的系统和方法

    公开(公告)号：US20050077485A1

    公开(公告)日：2005-04-14

    申请号：US10681541

    申请日：2003-10-08

    申请人： Chao-Hsiung Wang ,  Denny Tang ,  Wen-Chin Lin ,  Li-Shyue Lai

    发明人： Chao-Hsiung Wang ,  Denny Tang ,  Wen-Chin Lin ,  Li-Shyue Lai

    IPC分类号： G21G5/00 ,  H01L21/027

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00

    摘要： A method and system is disclosed for concentrating high energy particles on a predetermined area on a target semiconductor substrate. A high energy source for generating a predetermined amount of high energy particles, and an electromagnetic radiation source for generating low energy beams are used together. The system also uses a mask set having at least one mask with at least one alignment area and at least one mask target area thereon, the mask target area passing more high energy particles then any other area of the mask. At least one protection shield is incorporated in the system for protecting the alignment area from being exposed to the high energy particles, wherein the mask is aligned with the predetermined target semiconductor substrate by passing the low energy beams through the alignment area, wherein the high energy particles generated by the high energy source pass through the mask target area to land on the predetermined area on the target semiconductor substrate.

    摘要翻译： 公开了一种用于将高能粒子集中在目标半导体衬底上的预定区域上的方法和系统。 用于产生预定量的高能粒子的高能量源和用于产生低能量束的电磁辐射源一起使用。 该系统还使用具有至少一个具有至少一个对准区域和至少一个掩模目标区域的掩模的掩模组，掩模目标区域通过更多的高能粒子，然后通过掩模的任何其它区域。 至少一个保护屏蔽被并入系统中，用于保护对准区域不暴露于高能粒子，其中通过使低能量束通过对准区域，掩模与预定目标半导体衬底对齐，其中高能量 由高能量源产生的粒子通过掩模对象区域落在目标半导体衬底上的预定区域上。

    System and method for passing high energy particles through a mask
    9.
    发明授权
    System and method for passing high energy particles through a mask 有权
    将高能粒子通过掩模的系统和方法

    公开(公告)号：US07151271B2

    公开(公告)日：2006-12-19

    申请号：US10681541

    申请日：2003-10-08

    申请人： Chao-Hsiung Wang ,  Denny Tang ,  Wen-Chin Lin ,  Li-Shyue Lai

    发明人： Chao-Hsiung Wang ,  Denny Tang ,  Wen-Chin Lin ,  Li-Shyue Lai

    IPC分类号： A61N5/00 ,  G21G5/00

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00

    摘要： A method and system is disclosed for concentrating high energy particles on a predetermined area on a target semiconductor substrate. A high energy source for generating a predetermined amount of high energy particles, and an electro-magnetic radiation source for generating low energy beams are used together. The system also uses a mask set having at least one mask with at least one alignment area and at least one mask target area thereon, the mask target area passing more high energy particles then any other area of the mask. At least one protection shield is incorporated in the system for protecting the alignment area from being exposed to the high energy particles, wherein the mask is aligned with the predetermined target semiconductor substrate by passing the low energy beams through the alignment area, wherein the high energy particles generated by the high energy source pass through the mask target area to land on the predetermined area on the target semiconductor substrate.

    摘要翻译： 公开了一种用于将高能粒子集中在目标半导体衬底上的预定区域上的方法和系统。 用于产生预定量的高能粒子的高能量源和用于产生低能量束的电磁辐射源一起使用。 该系统还使用具有至少一个具有至少一个对准区域和至少一个掩模目标区域的掩模的掩模组，掩模目标区域通过更多的高能粒子，然后通过掩模的任何其它区域。 至少一个保护屏蔽被并入系统中，用于保护对准区域不暴露于高能粒子，其中通过使低能量束通过对准区域，掩模与预定目标半导体衬底对齐，其中高能量 由高能量源产生的粒子通过掩模对象区域落在目标半导体衬底上的预定区域上。

    MRAM arrays and methods for writing and reading magnetic memory devices
    10.
    发明授权
    MRAM arrays and methods for writing and reading magnetic memory devices 有权
    MRAM阵列和写入和读取磁存储器件的方法

    公开(公告)号：US07436698B2

    公开(公告)日：2008-10-14

    申请号：US11610739

    申请日：2006-12-14

    申请人： Wen-Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chao-Hsiung Wang ,  Fan-Shi Jordan Lai

    发明人： Wen-Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chao-Hsiung Wang ,  Fan-Shi Jordan Lai

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1673

    摘要： A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying a magnetic field to the select memory cells, sampling a second signal of the selected read line, and comparing the first and second signals to determine a logic state of the select memory cells.

    摘要翻译： 一种用于写入和读取磁存储单元的非破坏性技术和相关阵列，包括对与选择存储器单元相对应的所选读取行的第一信号进行采样，向选择存储单元施加磁场，对所选择的读取的第二信号 并且比较第一和第二信号以确定选择存储器单元的逻辑状态。