公开(公告)号：US20070008656A1

公开(公告)日：2007-01-11

申请号：US11175932

申请日：2005-07-06

申请人： Yue Liu ,  Daniel Abels ,  Moris Dovek ,  Min Li ,  Pokang Wang ,  Mao-Min Chen

发明人： Yue Liu ,  Daniel Abels ,  Moris Dovek ,  Min Li ,  Pokang Wang ,  Mao-Min Chen

IPC分类号： G11B5/33

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  G11B5/3133 ,  G11B2005/3996

摘要： The problem of increasing the output signal from a CCP-CPP GMR device without having it overheat has been overcome by placing materials that have different thermoelectric potentials on opposing sides of the spacer layer. Heat from the hot junction is removed at the substrate, which acts as a heat sink, resulting in a net local cooling of the confined current spacer layer, enabling it to operate at both higher input voltage increased reliability.

摘要翻译： 通过在间隔层的相对侧放置具有不同热电势的材料来克服增加来自CCP-CPP GMR器件而不使其过热的输出信号的问题。 来自热接点的热量在基板处被去除，其作为散热器，导致限流电流间隔层的局部局部冷却，使其能够在较高的输入电压增加的可靠性下工作。

公开(公告)号：US07382584B2

公开(公告)日：2008-06-03

申请号：US11175932

申请日：2005-07-06

申请人： Yue Liu ,  Daniel G. Abels ,  Moris Dovek ,  Min Li ,  Pokang Wang ,  Mao-Min Chen

发明人： Yue Liu ,  Daniel G. Abels ,  Moris Dovek ,  Min Li ,  Pokang Wang ,  Mao-Min Chen

IPC分类号： G11B5/39 ,  F25D23/12 ,  H01L35/28 ,  G01R33/02

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  G11B5/3133 ,  G11B2005/3996

摘要： The problem of increasing the output signal from a CCP-CPP GMR device without having it overheat has been overcome by placing materials that have different thermoelectric potentials on opposing sides of the spacer layer. Heat from the hot junction is removed at the substrate, which acts as a heat sink, resulting in a net local cooling of the confined current spacer layer, enabling it to operate at both higher input voltage increased reliability.

摘要翻译： 通过在间隔层的相对侧放置具有不同热电势的材料来克服增加来自CCP-CPP GMR器件而不使其过热的输出信号的问题。 来自热接点的热量在基板处被去除，其作为散热器，导致限流电流间隔层的局部局部冷却，使其能够在较高的输入电压增加的可靠性下工作。

公开(公告)号：US08031441B2

公开(公告)日：2011-10-04

申请号：US11803057

申请日：2007-05-11

申请人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer ≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.

摘要翻译： 公开了具有由至少一个金属（M）层和至少一个半导体或半金属（S）层组成的复合间隔层的CPP-GMR自旋阀。 复合间隔物可以具有M / S，S / M，M / S / M，S / M / S，M / S / M / S / M或多层（M / S / M） 是整数≧1。 钉扎层优选具有AP2 /耦合/ AP1配置，其中AP2部分是由CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z）表示的FCC三层，其中y为0至60原子％ ，z为75〜100原子％。 在一个实施方案中，M是厚度为0.5至50埃的Cu，S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。 自旋阀的dR / R比提高到10％以上，同时保持可接受的EM和RA性能。

公开(公告)号：US20120009337A1

公开(公告)日：2012-01-12

申请号：US13200013

申请日：2011-09-15

申请人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

IPC分类号： G11B5/31 ,  C23C14/34

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.

摘要翻译： 公开了具有由至少一个金属（M）层和至少一个半导体或半金属（S）层组成的复合间隔层的CPP-GMR自旋阀。 复合间隔物可以具有M / S，S / M，M / S / M，S / M / S，M / S / M / S / M或多层（M / S / M） 是整数≧1。 钉扎层优选具有AP2 /耦合/ AP1配置，其中AP2部分是由CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z）表示的FCC三层，其中y为0至60原子％ ，z为75〜100原子％。 在一个实施方案中，M是厚度为0.5至50埃的Cu，S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。 自旋阀的dR / R比提高到10％以上，同时保持可接受的EM和RA性能。

公开(公告)号：US08978240B2

公开(公告)日：2015-03-17

申请号：US13200013

申请日：2011-09-15

申请人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

IPC分类号： G11B5/127 ,  H04R31/00 ,  G11B5/39 ,  B82Y10/00 ,  B82Y25/00

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.

摘要翻译： 公开了具有由至少一个金属（M）层和至少一个半导体或半金属（S）层组成的复合间隔层的CPP-GMR自旋阀。 复合间隔物可以具有M / S，S / M，M / S / M，S / M / S，M / S / M / S / M或多层（M / S / M） 是整数≧1。 钉扎层优选具有AP2 /耦合/ AP1配置，其中AP2部分是由CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z）表示的FCC三层，其中y为0至60原子％ ，z为75〜100原子％。 在一个实施方案中，M是厚度为0.5至50埃的Cu，S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。 自旋阀的dR / R比提高到10％以上，同时保持可接受的EM和RA性能。

公开(公告)号：US20080278864A1

公开(公告)日：2008-11-13

申请号：US11803057

申请日：2007-05-11

申请人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

IPC分类号： G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer ≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.

摘要翻译： 公开了具有由至少一个金属（M）层和至少一个半导体或半金属（S）层组成的复合间隔层的CPP-GMR自旋阀。 复合间隔物可以具有M / S，S / M，M / S / M，S / M / S，M / S / M / S / M或多层（M / S / M） 配置，其中n是整数> = 1。 被钉扎层优选具有AP2 /偶联/ AP1构型，其中AP2部分是由CoZi Fe（100-Z）/ Fe Y 其中y为0至60原子％，以及（C 1 -C 6） z为75〜100原子％。 在一个实施方案中，M是厚度为0.5至50埃的Cu，S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。 自旋阀的dR / R比提高到10％以上，同时保持可接受的EM和RA性能。

公开(公告)号：US08085498B2

公开(公告)日：2011-12-27

申请号：US12586249

申请日：2009-09-17

申请人： Zhigang Bai ,  Yue Liu ,  Kowang Liu ,  Yan Wu ,  Moris Dovek

发明人： Zhigang Bai ,  Yue Liu ,  Kowang Liu ,  Yan Wu ,  Moris Dovek

IPC分类号： G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163

摘要： A PMR writer having a trailing shield structure is disclosed in which a flux choking layer (FCL) formed adjacent to the ABS provides a means to limit the amount of flux flowing from the trailing shield to a first write shield (WS1) near the write pole tip thereby significantly reducing adjacent track erasure. The FCL has a substantially smaller thickness than a top section of the trailing shield to which it is attached along a side opposite the ABS. As a result, pole tip protrusion is reduced compared to prior art PMR writers. The FCL contacts a trailing side of WS1 at the ABS and one or both of the trailing sides of the WS1 and FCL may be tapered or perpendicular with respect to the ABS. The top trailing shield section, FCL, and WS1 may be comprised of NiFe, CoFe, CoFeNi, or alloys thereof.

公开(公告)号：US20110063755A1

公开(公告)日：2011-03-17

申请号：US12586249

申请日：2009-09-17

申请人： Zhigang Bai ,  Yue Liu ,  Kowang Liu ,  Yan Wu ,  Moris Dovek

发明人： Zhigang Bai ,  Yue Liu ,  Kowang Liu ,  Yan Wu ,  Moris Dovek

IPC分类号： G11B5/10 ,  G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163

摘要： A PMR writer having a trailing shield structure is disclosed in which a flux choking layer (FCL) formed adjacent to the ABS provides a means to limit the amount of flux flowing from the trailing shield to a first write shield (WS1) near the write pole tip thereby significantly reducing adjacent track erasure. The FCL has a substantially smaller thickness than a top section of the trailing shield to which it is attached along a side opposite the ABS. As a result, pole tip protrusion is reduced compared to prior art PMR writers. The FCL contacts a trailing side of WS1 at the ABS and one or both of the trailing sides of the WS1 and FCL may be tapered or perpendicular with respect to the ABS. The top trailing shield section, FCL, and WS1 may be comprised of NiFe, CoFe, CoFeNi, or alloys thereof.

摘要翻译： 公开了具有拖尾屏蔽结构的PMR写入器，其中与ABS相邻形成的通量阻塞层（FCL）提供了一种将从后屏蔽流过的磁通量限制在写极附近的第一写屏蔽（WS1）的装置 从而显着地减少相邻轨道擦除。 FCL具有比尾部护罩的顶部部分基本上小的厚度，其沿着与ABS相对的一侧被附接到该顶部部分。 结果，与现有技术的PMR写入器相比，极尖突起减小。 FCL在ABS处接触WS1的后侧，并且WS1和FCL的一个或两个后侧可以相对于ABS呈锥形或垂直。 顶部后屏蔽部分FCL和WS1可以由NiFe，CoFe，CoFeNi或其合金组成。

公开(公告)号：US07978442B2

公开(公告)日：2011-07-12

申请号：US11906716

申请日：2007-10-03

申请人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/39

CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/313 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49227

摘要： A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. An amorphous Hf layer may be used without an oxidizable layer, or a thin Cu layer may be inserted in the CCP scheme to form a Hf/PIT/IAO or Hf/Cu/Al/PIT/IAO configuration. A double PIT/IAO process may be used as in Hf/PIT/IAO/Al/PIT/IAO or Hf/PIT/IAO/Hf/PIT/IAO schemes.

摘要翻译： 公开了一种用于CPP-GMR传感器的新型CCP方案，其中在执行预离子处理之前，在诸如Al，Mg或AlCu的下部Cu间隔物和可氧化层之间插入诸如Hf的非晶态金属/合金层 （PIT）和离子辅助氧化（IAO），以将非晶层转变为第一金属氧化物模板，并将可氧化层转变成其中具有Cu金属路径的第二金属氧化物模板。 无定形层促进可氧化层中的平滑度和较小的晶粒尺寸以最小化金属路径的变化，从而将dR / R，R和DR均匀度提高50％以上。 可以使用无氧Hf层，或者可以在CCP方案中插入薄Cu层以形成Hf / PIT / IAO或Hf / Cu / Al / PIT / IAO配置。 可以使用双重PIT / IAO工艺，如Hf / PIT / IAO / Al / PIT / IAO或Hf / PIT / IAO / Hf / PIT / IAO方案。

公开(公告)号：US20090091865A1

公开(公告)日：2009-04-09

申请号：US11906716

申请日：2007-10-03

申请人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/33

CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/313 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49227

摘要： A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. An amorphous Hf layer may be used without an oxidizable layer, or a thin Cu layer may be inserted in the CCP scheme to form a Hf/PIT/IAO or Hf/Cu/Al/PIT/IAO configuration. A double PIT/IAO process may be used as in Hf/PIT/IAO/Al/PIT/IAO or Hf/PIT/IAO/Hf/PIT/IAO schemes.

摘要翻译： 公开了一种用于CPP-GMR传感器的新型CCP方案，其中在执行预离子处理之前，在诸如Al，Mg或AlCu的下部Cu间隔物和可氧化层之间插入诸如Hf的非晶态金属/合金层 （PIT）和离子辅助氧化（IAO），以将非晶层转变为第一金属氧化物模板，并将可氧化层转变成其中具有Cu金属路径的第二金属氧化物模板。 无定形层促进可氧化层中的平滑度和较小的晶粒尺寸以最小化金属路径的变化，从而将dR / R，R和DR均匀度提高50％以上。 可以使用无氧Hf层，或者可以在CCP方案中插入薄Cu层以形成Hf / PIT / IAO或Hf / Cu / Al / PIT / IAO配置。 可以使用双重PIT / IAO工艺，如Hf / PIT / IAO / Al / PIT / IAO或Hf / PIT / IAO / Hf / PIT / IAO方案。