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132 条记录 (耗时 0.032 秒)

    Thermoelectric cooling of CCP-CPP devices
    2.
    发明申请
    Thermoelectric cooling of CCP-CPP devices 失效
    CCP-CPP设备的热电冷却

    公开(公告)号：US20070008656A1

    公开(公告)日：2007-01-11

    申请号：US11175932

    申请日：2005-07-06

    申请人： Yue Liu ,  Daniel Abels ,  Moris Dovek ,  Min Li ,  Pokang Wang ,  Mao-Min Chen

    发明人： Yue Liu ,  Daniel Abels ,  Moris Dovek ,  Min Li ,  Pokang Wang ,  Mao-Min Chen

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3929 ,  B82Y10/00 ,  G11B5/3133 ,  G11B2005/3996

    摘要： The problem of increasing the output signal from a CCP-CPP GMR device without having it overheat has been overcome by placing materials that have different thermoelectric potentials on opposing sides of the spacer layer. Heat from the hot junction is removed at the substrate, which acts as a heat sink, resulting in a net local cooling of the confined current spacer layer, enabling it to operate at both higher input voltage increased reliability.

    摘要翻译： 通过在间隔层的相对侧放置具有不同热电势的材料来克服增加来自CCP-CPP GMR器件而不使其过热的输出信号的问题。 来自热接点的热量在基板处被去除，其作为散热器，导致限流电流间隔层的局部局部冷却，使其能够在较高的输入电压增加的可靠性下工作。

    Junction stability and yield for spin valve heads
    3.
    发明授权
    Junction stability and yield for spin valve heads 失效
    自旋阀头的结点稳定性和产量

    公开(公告)号：US06879474B2

    公开(公告)日：2005-04-12

    申请号：US10718878

    申请日：2003-11-21

    申请人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

    发明人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

    IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  H01L43/12

    CPC分类号： B82Y10/00 ,  G11B5/313 ,  G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.

    摘要翻译： 通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。 然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。 本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。 这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。 还描述了用于制造该结构的方法。

    Process for manufacturing a spin valve recording head
    4.
    发明授权
    Process for manufacturing a spin valve recording head 失效
    制造旋转阀记录头的方法

    公开(公告)号：US06668443B2

    公开(公告)日：2003-12-30

    申请号：US09917347

    申请日：2001-07-30

    申请人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

    发明人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

    IPC分类号： G11B5127

    CPC分类号： B82Y10/00 ,  G11B5/313 ,  G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.

    摘要翻译： 通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。 然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。 本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。 这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。 还描述了用于制造该结构的方法。

    Method to improve heat dissipation in a magnetic shield
    6.
    发明授权
    Method to improve heat dissipation in a magnetic shield 有权
    改善磁屏蔽散热的方法

    公开(公告)号：US07320168B2

    公开(公告)日：2008-01-22

    申请号：US10696431

    申请日：2003-10-29

    申请人： Cherng-Chyi Han ,  Rod Lee ,  Mao-Min Chen ,  Pokang Wang

    发明人： Cherng-Chyi Han ,  Rod Lee ,  Mao-Min Chen ,  Pokang Wang

    IPC分类号： G11B5/127 ,  H04R31/00

    CPC分类号： G11B5/3136 ,  G11B5/3133 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： Problems such as thermal pole tip protrusion result from thermal mismatch between the alumina and pole material during the writing process. This, and similar problems due to inadequate heat dissipation, have been overcome by dividing the bottom shield into two pieces both of which sit on top of a non-magnetic heat sink. Heat generated by the coil during writing is transferred to the non-magnetic heat sink whence it gets transferred to the substrate. With this approach, the head not only benefits from less field disturbance due to the small shield but also improves heat dissipation from the additional heat sink.

    摘要翻译： 在写入过程中，由于氧化铝和极材料之间的热失配，导致热极尖突出的问题。 通过将底部屏蔽分成两个位于非磁性散热器顶部的两个部件，已经克服了由于不充分散热引起的这种和类似的问题。 在写入期间由线圈产生的热量被传递到非磁性散热器，因为它被传送到基板。 采用这种方法，由于小屏蔽，头部不但受益于较少的场干扰，还可以改善附加散热器的散热。

    Method to make abutted junction GMR head without lead shunting
    10.
    发明授权
    Method to make abutted junction GMR head without lead shunting 失效
    在没有引线分流的情况下制造对接接头GMR头的方法

    公开(公告)号：US07196876B2

    公开(公告)日：2007-03-27

    申请号：US10236359

    申请日：2002-09-06

    申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Pokang Wang

    发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Pokang Wang

    IPC分类号： G11B5/39 ,  G11B5/33 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49052

    摘要： A method for forming an abutted junction GMR bottom spin valve sensor in which the free layer has a maximum effective length due to the elimination or minimization of bias layer and conducting lead layer overspreading onto the sensor element and the consequent reduction of current shunting. The overspreading is eliminated by forming a thin dielectric layer on the upper surface of the sensor element. When the biasing and conducting leads are formed on the abutted junction, they overspread onto this layer and the overspread can be removed by an ion-milling process during which the dielectric layer protects the sensor.

    摘要翻译： 用于形成邻接结GMR底部自旋阀传感器的方法，其中自由层由于偏置层的消除或最小化而导致最大有效长度，并且导致引线层过度传播到传感器元件上，从而减少了电流分流。 通过在传感器元件的上表面上形成薄的电介质层来消除超扩展。 当偏置和导电引线形成在邻接接头上时，它们被扩展到该层上，并且可以通过离子铣削工艺去除超扩展，其中电介质层保护传感器。