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公开(公告)号：US06841405B2
公开(公告)日：2005-01-11
申请号：US10269268
申请日：2002-10-10
CPC分类号： G01R31/2812 , G01R31/2818
摘要： A manufacturing method of an electronic device is to improve test efficiency using test structure and improve yield. The manufacturing method performs test using a first lead wire disposed on an insulating layer formed on a substrate and a second lead wire electrically connected to the substrate and disposed on the insulating layer and manages the electronic device on the basis of results of the test to manufacture the electronic device. The manufacturing method includes a step of testing whether the first lead wire is disconnected or not by measuring an electric resistance between both ends of the first lead wire and a step of testing whether the first and second lead wires are short-circuited or not by measuring an electric resistance between the first lead wire and the substrate.
摘要翻译： 电子设备的制造方法是使用测试结构提高测试效率并提高产量。 该制造方法使用设置在形成于基板上的绝缘层上的第一引线和与基板电连接并设置在绝缘层上的第二引线进行测试，并基于制造试验的结果来管理电子设备 电子设备。 该制造方法包括通过测量第一引线的两端之间的电阻和通过测量第一和第二引线是否短路的步骤来测试第一引线是否断开的步骤 第一引线与基板之间的电阻。
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公开(公告)号：US06770496B2
公开(公告)日：2004-08-03
申请号：US10269411
申请日：2002-10-10
IPC分类号： H01L2166
CPC分类号： G01R31/2812 , G01R31/2818
摘要： A manufacturing method of an electronic device is to improve test efficiency using test structure and improve yield. The manufacturing method performs test using a first lead wire disposed on an insulating layer formed on a substrate and a second lead wire electrically connected to the substrate and disposed on the insulating layer and manages the electronic device on the basis of results of the test to manufacture the electronic device. The manufacturing method includes a step of testing whether the first lead wire is disconnected or not by measuring an electric resistance between both ends of the first lead wire and a step of testing whether the first and second lead wires are short-circuited or not by measuring an electric resistance between the first lead wire and the substrate.
摘要翻译： 电子设备的制造方法是使用测试结构提高测试效率并提高产量。 该制造方法使用设置在形成于基板上的绝缘层上的第一引线和与基板电连接并设置在绝缘层上的第二引线进行测试，并基于制造试验的结果来管理电子设备 电子设备。 该制造方法包括通过测量第一引线的两端之间的电阻和通过测量第一和第二引线是否短路的步骤来测试第一引线是否断开的步骤 第一引线与基板之间的电阻。
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公开(公告)号：US06895346B2
公开(公告)日：2005-05-17
申请号：US10269127
申请日：2002-10-10
CPC分类号： G01R31/2812 , G01R31/2818
摘要： A manufacturing method of an electronic device is to improve test efficiency using test structure and improve yield. The manufacturing method performs test using a first lead wire disposed on an insulating layer formed on a substrate and a second lead wire electrically connected to the substrate and disposed on the insulating layer and manages the electronic device on the basis of results of the test to manufacture the electronic device. The manufacturing method includes a step of testing whether the first lead wire is disconnected or not by measuring an electric resistance between both ends of the first lead wire and a step of testing whether the first and second lead wires are short-circuited or not by measuring an electric resistance between the first lead wire and the substrate.
摘要翻译： 电子设备的制造方法是使用测试结构提高测试效率并提高产量。 该制造方法使用设置在形成于基板上的绝缘层上的第一引线和与基板电连接并设置在绝缘层上的第二引线进行测试，并基于制造试验的结果来管理电子设备 电子设备。 该制造方法包括通过测量第一引线的两端之间的电阻和通过测量第一和第二引线是否短路的步骤来测试第一引线是否断开的步骤 第一引线与基板之间的电阻。
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公开(公告)号：US06771077B2
公开(公告)日：2004-08-03
申请号：US10126263
申请日：2002-04-19
IPC分类号： G01R3102
CPC分类号： G01R31/2812 , G01R31/2818
摘要： A manufacturing method of an electronic device is to improve test efficiency using test structure and improve yield. The manufacturing method performs test using a first lead wire disposed on an insulating layer formed on a substrate and a second lead wire electrically connected to the substrate and disposed on the insulating layer and manages the electronic device on the basis of results of the test to manufacture the electronic device. The manufacturing method includes a step of testing whether the first lead wire is disconnected or not by measuring an electric resistance between both ends of the first lead wire and a step of testing whether the first and second lead wires are short-circuited or not by measuring an electric resistance between the first lead wire and the substrate.
摘要翻译： 电子设备的制造方法是使用测试结构提高测试效率并提高产量。 该制造方法使用设置在形成于基板上的绝缘层上的第一引线和与基板电连接并设置在绝缘层上的第二引线进行测试，并基于制造试验的结果来管理电子设备 电子设备。 该制造方法包括通过测量第一引线的两端之间的电阻和通过测量第一和第二引线是否短路的步骤来测试第一引线是否断开的步骤 第一引线与基板之间的电阻。
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公开(公告)号：US06780660B2
公开(公告)日：2004-08-24
申请号：US10269199
申请日：2002-10-10
IPC分类号： H01L2166
CPC分类号： G01R31/2812 , G01R31/2818
摘要： A manufacturing method of an electronic device is to improve test efficiency using test structure and improve yield. The manufacturing method performs test using a first lead wire disposed on an insulating layer formed on a substrate and a second lead wire electrically connected to the substrate and disposed on the insulating layer and manages the electronic device on the basis of results of the test to manufacture the electronic device. The manufacturing method includes a step of testing whether the first lead wire is disconnected or not by measuring an electric resistance between both ends of the first lead wire and a step of testing whether the first and second lead wires are short-circuited or not by measuring an electric resistance between the first lead wire and the substrate.
摘要翻译： 电子设备的制造方法是使用测试结构提高测试效率并提高产量。 该制造方法使用设置在形成于基板上的绝缘层上的第一引线和与基板电连接并设置在绝缘层上的第二引线进行测试，并基于制造试验的结果来管理电子设备 电子设备。 该制造方法包括通过测量第一引线的两端之间的电阻和通过测量第一和第二引线是否短路的步骤来测试第一引线是否断开的步骤 第一引线与基板之间的电阻。
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6.发明授权公开(公告)号：US08612811B2
公开(公告)日：2013-12-17
申请号：US13119633
申请日：2009-09-04
IPC分类号： G11C29/56
CPC分类号： G11C29/006 , G06F17/5018 , G06F2217/10 , G11C29/54 , G11C29/56004
摘要： In a managing system for a semiconductor manufacturing apparatus, a predicting unit 121 predicts a characteristic defective ratio and a foreign-substance defective ratio of each process obtains an actual defective ratio of each fail bit mode and a critical area of each process and each fail bit mode, calculates the number of foreign substances of each process by using the actual defective ratio of each fail bit mode and the critical area of each process and each fail bit mode, the fail bit mode being except for an arbitrary fail bit mode, calculates a foreign-substance defective ratio of each process and a foreign-substance defective ratio of each fail bit mode by using the number of foreign substances, and calculates a characteristic defective ratio of the arbitrary fail bit mode based on the foreign-substance defective ratio and actual defective ratio of each fail bit mode.
摘要翻译： 在半导体制造装置的管理系统中，预测单元121预测每个处理的特征缺陷率和异物缺陷率，获得每个故障位模式和每个处理的临界区域的实际缺陷率以及每个故障位 模式，通过使用每个故障位模式的实际故障率和每个过程的关键区域以及每个故障位模式来计算每个过程的异物数量，故障位模式除了任意故障位模式，计算出 通过使用异物数量，每个处理的异物缺陷率和每个故障位模式的异物缺陷率，并且基于异物缺陷率和实际值计算任意故障位模式的特征缺陷率 每个故障位模式的故障率。
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7.发明申请公开(公告)号：US20110172806A1
公开(公告)日：2011-07-14
申请号：US13119633
申请日：2009-09-04
IPC分类号： G06F19/00
CPC分类号： G11C29/006 , G06F17/5018 , G06F2217/10 , G11C29/54 , G11C29/56004
摘要： In a managing system for a semiconductor manufacturing apparatus, a predicting unit 121 predicts a characteristic defective ratio and a foreign-substance defective ratio of each process obtains an actual defective ratio of each fail bit mode and a critical area of each process and each fail bit mode, calculates the number of foreign substances of each process by using the actual defective ratio of each fail bit mode and the critical area of each process and each fail bit mode, the fail bit mode being except for an arbitrary fail bit mode, calculates a foreign-substance defective ratio of each process and a foreign-substance defective ratio of each fail bit mode by using the number of foreign substances, and calculates a characteristic defective ratio of the arbitrary fail bit mode based on the foreign-substance defective ratio and actual defective ratio of each fail bit mode.
摘要翻译： 在半导体制造装置的管理系统中，预测单元121预测每个处理的特征缺陷率和异物缺陷率，获得每个故障位模式和每个处理的临界区域的实际缺陷率以及每个故障位 模式，通过使用每个故障位模式的实际故障率和每个过程的关键区域以及每个故障位模式来计算每个过程的异物数量，故障位模式除了任意故障位模式，计算出 通过使用异物数量，每个处理的异物缺陷率和每个故障位模式的异物缺陷率，并且基于异物缺陷率和实际值计算任意故障位模式的特征缺陷率 每个故障位模式的故障率。
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公开(公告)号：US07301146B2
公开(公告)日：2007-11-27
申请号：US11201222
申请日：2005-08-11
申请人： Satoshi Tomimatsu , Hidemi Koike , Junzo Azuma , Tohru Ishitani , Aritoshi Sugimoto , Yuichi Hamamura , Isamu Sekihara , Akira Shimase
发明人： Satoshi Tomimatsu , Hidemi Koike , Junzo Azuma , Tohru Ishitani , Aritoshi Sugimoto , Yuichi Hamamura , Isamu Sekihara , Akira Shimase
CPC分类号： G01Q10/06 , G01N23/04 , G01N23/225 , G01R31/2886 , G01R31/311 , H01J37/28
摘要： A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow (54) appearing immediately before the probe contacts the sample, or based on a change in relative positions of a probe image and a sample image that are formed as an ion beam is irradiated diagonally.
摘要翻译： 探针驱动方法和探针装置，用于通过监测探针高度，以安全和有效的方式使探针与样品的表面接触。 通过检测在探针接触样品之前出现的探针阴影（54），或者基于探针图像和样品图像的相对位置的变化，获得关于来自样品表面的探针的高度的信息， 对角线照射离子束。
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公开(公告)号：US20050269511A1
公开(公告)日：2005-12-08
申请号：US11201222
申请日：2005-08-11
申请人： Satoshi Tomimatsu , Hidemi Koike , Junzo Azuma , Tohru Ishitani , Aritoshi Sugimoto , Yuichi Hamamura , Isamu Sekihara , Akira Shimase
发明人： Satoshi Tomimatsu , Hidemi Koike , Junzo Azuma , Tohru Ishitani , Aritoshi Sugimoto , Yuichi Hamamura , Isamu Sekihara , Akira Shimase
IPC分类号： G01N1/28 , G01N1/32 , G01N23/04 , G01N23/225 , G01Q10/00 , G01Q30/02 , G01Q30/04 , G01Q30/20 , G01Q60/44 , G01R1/06 , G01R31/28 , G01R31/311 , H01J37/28 , H01L21/66 , G01N23/00 , G21K7/00
CPC分类号： G01Q10/06 , G01N23/04 , G01N23/225 , G01R31/2886 , G01R31/311 , H01J37/28
摘要： A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow (54) appearing immediately before the probe contacts the sample, or based on a change in relative positions of a probe image and a sample image that are formed as an ion beam is irradiated diagonally.
摘要翻译： 探针驱动方法和探针装置，用于通过监测探针高度，以安全和有效的方式使探针与样品的表面接触。 通过检测在探针接触样品之前出现的探针阴影（54），或者基于探针图像和样品图像的相对位置的变化，获得关于来自样品表面的探针的高度的信息， 对角线照射离子束。
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公开(公告)号：US06960765B2
公开(公告)日：2005-11-01
申请号：US10296887
申请日：2001-06-08
申请人： Satoshi Tomimatsu , Hidemi Koike , Junzo Azuma , Tohru Ishitani , Aritoshi Sugimoto , Yuichi Hamamura , Isamu Sekihara , Akira Shimase
发明人： Satoshi Tomimatsu , Hidemi Koike , Junzo Azuma , Tohru Ishitani , Aritoshi Sugimoto , Yuichi Hamamura , Isamu Sekihara , Akira Shimase
IPC分类号： G01N1/28 , G01N1/32 , G01N23/04 , G01N23/225 , G01Q10/00 , G01Q30/02 , G01Q30/04 , G01Q30/20 , G01Q60/44 , G01R1/06 , G01R31/28 , G01R31/311 , H01J37/28 , H01L21/66 , G01N13/16 , G01B5/28
CPC分类号： G01Q10/06 , G01N23/04 , G01N23/225 , G01R31/2886 , G01R31/311 , H01J37/28
摘要： A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow appearing immediately before the probe contacts the sample, or based on a change in relative positions of a probe image and a sample image that are formed as an ion beam is irradiated diagonally.
摘要翻译： 探针驱动方法和探针装置，用于通过监测探针高度，以安全和有效的方式使探针与样品的表面接触。 通过检测在探针接触样品之前出现的探针阴影，或者基于作为离子束形成的探针图像和样品图像的相对位置的变化，获得关于来自样品表面的探针的高度的信息 对角线照射。
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