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公开(公告)号:US06511538B1
公开(公告)日:2003-01-28
申请号:US09830803
申请日:2001-04-30
申请人: Yuichi Wada , Hiroyuki Yarita , Hisashl Aida , Naomi Yoshida
发明人: Yuichi Wada , Hiroyuki Yarita , Hisashl Aida , Naomi Yoshida
IPC分类号: C30B2504
摘要: When performing film deposition on the surface of a wafer, a turntable supporting the wafer is first rotated. Next, a fluid containing an organic metal is applied onto the wafer via the tip of a nozzle. At the same time, an ultrasound wave is generated by an ultrasound wave generating device, and the turntable is vibrated. Thus the vibrations from the turntable are applied to the wafer, these wafer vibrations allow the fluid containing an organic metal to thoroughly permeate into the detailed patterning of the wafer surface, and said fluid covers its entirety. As a result, film deposition with excellent filling-in characteristics becomes possible.
摘要翻译: 当在晶片的表面上进行薄膜沉积时,首先旋转支撑晶片的转台。 接下来,通过喷嘴的尖端将含有有机金属的流体施加到晶片上。 同时,通过超声波产生装置产生超声波,并且转盘振动。 因此,来自转台的振动被施加到晶片,这些晶片振动允许包含有机金属的流体充分渗透到晶片表面的详细图案化中,并且所述流体覆盖其整体。 结果,具有优异的填充特性的膜沉积成为可能。
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公开(公告)号:US06576567B1
公开(公告)日:2003-06-10
申请号:US09830610
申请日:2001-04-30
申请人: Yuichi Wada , Hiroyuki Yarita , Hisashi Aida , Naomi Yoshida
发明人: Yuichi Wada , Hiroyuki Yarita , Hisashi Aida , Naomi Yoshida
IPC分类号: H01L2131
CPC分类号: H01L21/288 , C23C18/08 , H01L21/76877
摘要: In a film deposition method of depositing a film by adhering an organometallic fluid onto a to-be-processed body such as a semiconductor wafer and causing a pyrolytic decomposition reaction to occur, an organic solvent such as heptadecane is first applied onto the wafer. At this time, since heptadecane has favorable wettability to the wafer, it efficiently permeates over the entire wafer and flows into holes and trenches without an occurrence of bubbles. Next, an organic metal such as a fluid mainly containing, for example, (hfac)Cu+1(tmvs) is applied onto wafer W. At this time, since the heptadecane that is first applied is a solvent for the organic metal, the organometallic fluid is highly adaptive to heptadecane, it efficiently permeates over the entire wafer W, and evenly flows into holes etc. This allows filling-in to be performed without the development of vacancies.
摘要翻译: 在通过将有机金属流体粘附到诸如半导体晶片的待处理体上并引起热解分解反应而沉积膜的成膜方法中,首先将诸如十七烷的有机溶剂施加到晶片上。 此时,由于十七烷对晶片具有良好的润湿性,所以其有效地透过整个晶片并流入孔和沟槽而不发生气泡。 接着,在晶片W上涂布主要含有例如(hfac)Cu + 1(tmvs)的流体等有机金属。此时,首先施加的十七烷是有机金属的溶剂, 有机金属液高度适应于十七烷,它有效地渗透整个晶片W,并均匀地流入孔等。这允许在不发生空位的情况下进行填充。
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公开(公告)号:US06852626B1
公开(公告)日:2005-02-08
申请号:US09830611
申请日:1999-10-29
申请人: Yuichi Wada , Hiroyuki Yarita , Hisashi Aida , Naomi Yoshida
发明人: Yuichi Wada , Hiroyuki Yarita , Hisashi Aida , Naomi Yoshida
IPC分类号: H01L21/3205 , C23C18/02 , H01L21/00 , H01L21/288 , H01L23/52 , H01L21/44
CPC分类号: H01L21/6715 , H01L21/288
摘要: In the film deposition method of the present invention, an organometallic fluid, which has an organic metal such as a copper diketonate as its main component, and which precipitates film deposition material through a pyrolytic decomposed reaction, is first prepared; and the organometallic fluid is then applied onto a semiconductor wafer at a certain temperature within the non-reactive range of the organic metal. Afterwards, the wafer is heated to a predetermined temperature, the organic metal within the organometallic fluid that is applied onto the wafer is pyrolytically decomposed, and film is formed on the wafer. With this method, since application is performed at a temperature within the non-reactive range of the organic metal, deposition of the film does not occur, allowing uniform and homogenous application to be performed. Also, since pyrolytic decomposition is performed separately in a later process, a stable reaction may be assured, so that a film of uniform thickness and quality may be deposited.
摘要翻译: 在本发明的膜沉积方法中,首先制备具有二硫酸铜铜等有机金属作为主要成分的有机金属液,并通过热分解反应析出析出材料。 然后将有机金属液体以有机金属的非反应性范围内的一定温度施加到半导体晶片上。 然后将晶片加热到预定温度,施加到晶片上的有机金属液中的有机金属被热分解,并且在晶片上形成膜。 利用该方法,由于在有机金属的非反应性范围内的温度下进行施加,所以不会发生膜的沉积,从而能够进行均匀且均匀的涂布。 此外,由于在后续工艺中分开进行热分解,因此可以确保稳定的反应,从而可以沉积均匀的厚度和质量的膜。
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公开(公告)号:US06488984B1
公开(公告)日:2002-12-03
申请号:US09830633
申请日:2001-04-30
申请人: Yuichi Wada , Hiroyuki Yarita , Hisashi Aida , Naomi Yoshida
发明人: Yuichi Wada , Hiroyuki Yarita , Hisashi Aida , Naomi Yoshida
IPC分类号: B05D302
CPC分类号: H01L21/76877 , C23C18/08 , H01L21/28556 , H01L21/6715
摘要: The present invention is directed to a film deposition method, which performs one series of processing from formation of the barrier metal up to and including formation of the metal layer in an environment cut off from air. Specifically, the performing of the barrier metal layer formation in a first device and the metal layer formation in a second device; and the transport of a semiconductor wafer from the first device to the second device is performed through a transport pathway that is cut off from air. As a result, the barrier metal layer that is formed is not affected by, for example, natural oxidation and layer quality is improved.
摘要翻译: 本发明涉及一种成膜方法,该方法从在从空气中切断的环境中形成阻挡金属直至包括金属层的形成进行一系列处理。 具体地说,在第一装置中进行阻挡金属层的形成,在第二装置中进行金属层的形成; 并且通过从空气中切断的输送路径,将半导体晶片从第一装置输送到第二装置。 结果,形成的阻挡金属层不受例如天然氧化的影响,并且层质量得到改善。
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公开(公告)号:US06593252B1
公开(公告)日:2003-07-15
申请号:US09830609
申请日:2001-04-30
申请人: Yuichi Wada , Hiroyuki Yarita , Hisashi Aida , Naomi Yoshida
发明人: Yuichi Wada , Hiroyuki Yarita , Hisashi Aida , Naomi Yoshida
IPC分类号: H01L21469
CPC分类号: H01L21/6715 , C23C18/08
摘要: The present invention is characterized by comprising a supply means (28) for supplying an organometallic fluid, which has an organic metal as a main component and which precipitates film deposition material using a pyrolytic decomposition reaction; an application means (126) for applying the organometallic fluid that is supplied by said supply means onto a to-be-processed body; and a heating means (52) for heating to a predetermined temperature the to-be-processed body to which is applied the organometallic fluid by said application means; wherein said application means (126) is characterized by being outfitted with an application fluid containing body (100), which is capable of containing said organometallic fluid and capable of coming into contact with and separation from said to-be-processed body.
摘要翻译: 本发明的特征在于包括用于供应有机金属液体的供给装置(28),所述有机金属液体以有机金属为主要成分,并使用热分解反应沉淀成膜材料; 用于将由所述供给装置供应的有机金属液体施加到待处理体上的施加装置(126) 以及加热装置(52),用于将由所述施加装置施加有机金属液体的待处理体加热到预定温度; 其特征在于,所述施加装置(126)的特征在于,其配备有能够容纳所述有机金属液体并且能够与所述待处理体接触并与其分离的涂布液体(100)。
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公开(公告)号:US07256853B2
公开(公告)日:2007-08-14
申请号:US10977934
申请日:2004-11-01
申请人: Kikuo Ono , Ikuko Mori , Ryutaro Oke , Hiroyuki Yarita
发明人: Kikuo Ono , Ikuko Mori , Ryutaro Oke , Hiroyuki Yarita
IPC分类号: G02F1/1343
CPC分类号: G02F1/136259 , G02F1/134363 , G02F1/13624 , G02F2201/508
摘要: A liquid crystal display device with a planar counter electrode formed on the first substrate in each pixel region, a pixel electrode formed on the counter electrode by way of an insulation layer, the pixel electrode formed of a first pixel electrode and a second pixel electrode in the pixel region, the first pixel electrode and the second pixel electrode have a large number of slits which are arranged in parallel in the electrodes and the extending direction of the slits is different from both extending directions of the gate lines and the drain lines, and the neighboring sides of the first and the second pixel electrodes are arranged to be parallel to each other, and a portion between the neighboring sides of the first and the second pixel electrodes is positioned above the counter electrode.
摘要翻译: 一种液晶显示装置,具有形成在每个像素区域中的第一基板上的平面对置电极,通过绝缘层形成在对电极上的像素电极,由第一像素电极和第二像素电极形成的像素电极 像素区域,第一像素电极和第二像素电极具有在电极中平行布置的大量狭缝,并且狭缝的延伸方向与栅极线和漏极线的两个延伸方向不同,以及 第一和第二像素电极的相邻侧被布置为彼此平行,并且第一和第二像素电极的相邻侧之间的部分位于对电极上方。
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公开(公告)号:US07567325B2
公开(公告)日:2009-07-28
申请号:US12216442
申请日:2008-07-03
申请人: Kikuo Ono , Ikuko Mori , Ryutaro Oke , Hiroyuki Yarita
发明人: Kikuo Ono , Ikuko Mori , Ryutaro Oke , Hiroyuki Yarita
IPC分类号: G02F1/1343
CPC分类号: G02F1/136259 , G02F1/134363 , G02F1/13624 , G02F2201/508
摘要: A liquid crystal display device with a planar counter electrode formed on the first substrate in each pixel region, a pixel electrode formed on the counter electrode by way of an insulation layer, the pixel electrode formed of a first pixel electrode and a second pixel electrode in the pixel region, the first pixel electrode and the second pixel electrode have a large number of slits which are arranged in parallel in the electrodes and the extending direction of the slits is different from both extending directions of the gate lines and the drain lines, and the neighboring sides of the first and the second pixel electrodes are arranged to be parallel to each other, and a portion between the neighboring sides of the first and the second pixel electrodes is positioned above the counter electrode.
摘要翻译: 一种液晶显示装置,具有形成在每个像素区域中的第一基板上的平面对置电极,通过绝缘层形成在对电极上的像素电极,由第一像素电极和第二像素电极形成的像素电极 像素区域,第一像素电极和第二像素电极具有在电极中平行布置的大量狭缝,并且狭缝的延伸方向与栅极线和漏极线的两个延伸方向不同,以及 第一和第二像素电极的相邻侧被布置为彼此平行,并且第一和第二像素电极的相邻侧之间的部分位于对电极上方。
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公开(公告)号:US07369205B2
公开(公告)日:2008-05-06
申请号:US11080884
申请日:2005-03-16
申请人: Hiroyuki Yarita , Kikuo Ono
发明人: Hiroyuki Yarita , Kikuo Ono
IPC分类号: G02F1/1343
CPC分类号: G02F1/13452 , H01L24/83 , H01L2224/16 , H01L2224/2929 , H01L2224/293 , H01L2224/83851 , H01L2924/00011 , H01L2224/29075 , H01L2924/00014
摘要: A display device with a substrate, a terminal portion, and the terminal portion have at least a portion formed with a first transparent conductive film and a second transparent conductive film, and the first transparent conductive film is exposed from the second transparent conductive film at a part of the portion, and crystallinity of the first transparent conductive film is higher than that of the second transparent conductive film.
摘要翻译: 具有基板,端子部分和端子部分的显示装置具有形成有第一透明导电膜和第二透明导电膜的至少一部分,并且第一透明导电膜在第一透明导电膜上以 部分的一部分,第一透明导电膜的结晶度高于第二透明导电膜的结晶度。
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公开(公告)号:US20050105032A1
公开(公告)日:2005-05-19
申请号:US10977934
申请日:2004-11-01
申请人: Kikuo Ono , Ikuko Mori , Ryutaro Oke , Hiroyuki Yarita
发明人: Kikuo Ono , Ikuko Mori , Ryutaro Oke , Hiroyuki Yarita
IPC分类号: G02F1/1343 , G02F1/133 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L29/786
CPC分类号: G02F1/136259 , G02F1/134363 , G02F1/13624 , G02F2201/508
摘要: A liquid crystal display device with a planar counter electrode formed on the first substrate in each pixel region, a pixel electrode formed on the counter electrode by way of an insulation layer, the pixel electrode formed of a first pixel electrode and a second pixel electrode in the pixel region, the first pixel electrode and the second pixel electrode have a large number of slits which are arranged in parallel in the electrodes and the extending direction of the slits is different from both extending directions of the gate lines and the drain lines, and the neighboring sides of the first and the second pixel electrodes are arranged to be parallel to each other, and a portion between the neighboring sides of the first and the second pixel electrodes is positioned above the counter electrode.
摘要翻译: 一种液晶显示装置,具有形成在每个像素区域中的第一基板上的平面对置电极,通过绝缘层形成在对电极上的像素电极,由第一像素电极和第二像素电极形成的像素电极 像素区域,第一像素电极和第二像素电极具有在电极中平行布置的大量狭缝,并且狭缝的延伸方向与栅极线和漏极线的两个延伸方向不同,以及 第一和第二像素电极的相邻侧被布置为彼此平行,并且第一和第二像素电极的相邻侧之间的部分位于对电极上方。
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公开(公告)号:US07612855B2
公开(公告)日:2009-11-03
申请号:US12359636
申请日:2009-01-26
申请人: Kikuo Ono , Ikuko Mori , Ryutaro Oke , Hiroyuki Yarita
发明人: Kikuo Ono , Ikuko Mori , Ryutaro Oke , Hiroyuki Yarita
IPC分类号: G02F1/1343
CPC分类号: G02F1/136227 , G02F1/134363
摘要: A liquid crystal display device includes a pair of substrates with a liquid crystal layer therebetween, and a plurality of pixel regions defined by gate signal lines and drain signal lines. A counter electrode which is planar with a substantially rectangular shape is formed on each pixel region, with a pixel electrode having a plurality of slits in overlapping relationship with the counter electrode. A counter voltage signal line is formed in parallel with the gate signal lines and connected with the counter electrode, a first contact hole for connecting the pixel electrode and a source electrode, a connection line and second and third contact holes are provided. The counter electrode is arranged so as to not overlap the first contact hole.
摘要翻译: 液晶显示装置包括一对基板,其间具有液晶层,以及由栅极信号线和漏极信号线限定的多个像素区域。 在每个像素区域上形成平面的具有大致矩形形状的对电极,其中像素电极具有与对电极重叠的多个狭缝。 反电压信号线与栅极信号线并联形成并与对电极连接,提供用于连接像素电极和源电极的第一接触孔,连接线和第二和第三接触孔。 对置电极被布置成不与第一接触孔重叠。
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