公开(公告)号：US06593252B1

公开(公告)日：2003-07-15

申请号：US09830609

申请日：2001-04-30

申请人： Yuichi Wada ,  Hiroyuki Yarita ,  Hisashi Aida ,  Naomi Yoshida

发明人： Yuichi Wada ,  Hiroyuki Yarita ,  Hisashi Aida ,  Naomi Yoshida

IPC分类号： H01L21469

CPC分类号： H01L21/6715 ,  C23C18/08

摘要： The present invention is characterized by comprising a supply means (28) for supplying an organometallic fluid, which has an organic metal as a main component and which precipitates film deposition material using a pyrolytic decomposition reaction; an application means (126) for applying the organometallic fluid that is supplied by said supply means onto a to-be-processed body; and a heating means (52) for heating to a predetermined temperature the to-be-processed body to which is applied the organometallic fluid by said application means; wherein said application means (126) is characterized by being outfitted with an application fluid containing body (100), which is capable of containing said organometallic fluid and capable of coming into contact with and separation from said to-be-processed body.

摘要翻译： 本发明的特征在于包括用于供应有机金属液体的供给装置（28），所述有机金属液体以有机金属为主要成分，并使用热分解反应沉淀成膜材料; 用于将由所述供给装置供应的有机金属液体施加到待处理体上的施加装置（126） 以及加热装置（52），用于将由所述施加装置施加有机金属液体的待处理体加热到预定温度; 其特征在于，所述施加装置（126）的特征在于，其配备有能够容纳所述有机金属液体并且能够与所述待处理体接触并与其分离的涂布液体（100）。

公开(公告)号：US06576567B1

公开(公告)日：2003-06-10

申请号：US09830610

申请日：2001-04-30

申请人： Yuichi Wada ,  Hiroyuki Yarita ,  Hisashi Aida ,  Naomi Yoshida

发明人： Yuichi Wada ,  Hiroyuki Yarita ,  Hisashi Aida ,  Naomi Yoshida

IPC分类号： H01L2131

CPC分类号： H01L21/288 ,  C23C18/08 ,  H01L21/76877

摘要： In a film deposition method of depositing a film by adhering an organometallic fluid onto a to-be-processed body such as a semiconductor wafer and causing a pyrolytic decomposition reaction to occur, an organic solvent such as heptadecane is first applied onto the wafer. At this time, since heptadecane has favorable wettability to the wafer, it efficiently permeates over the entire wafer and flows into holes and trenches without an occurrence of bubbles. Next, an organic metal such as a fluid mainly containing, for example, (hfac)Cu+1(tmvs) is applied onto wafer W. At this time, since the heptadecane that is first applied is a solvent for the organic metal, the organometallic fluid is highly adaptive to heptadecane, it efficiently permeates over the entire wafer W, and evenly flows into holes etc. This allows filling-in to be performed without the development of vacancies.

摘要翻译： 在通过将有机金属流体粘附到诸如半导体晶片的待处理体上并引起热解分解反应而沉积膜的成膜方法中，首先将诸如十七烷的有机溶剂施加到晶片上。 此时，由于十七烷对晶片具有良好的润湿性，所以其有效地透过整个晶片并流入孔和沟槽而不发生气泡。 接着，在晶片W上涂布主要含有例如（hfac）Cu + 1（tmvs）的流体等有机金属。此时，首先施加的十七烷是有机金属的溶剂， 有机金属液高度适应于十七烷，它有效地渗透整个晶片W，并均匀地流入孔等。这允许在不发生空位的情况下进行填充。

公开(公告)号：US06488984B1

公开(公告)日：2002-12-03

申请号：US09830633

申请日：2001-04-30

申请人： Yuichi Wada ,  Hiroyuki Yarita ,  Hisashi Aida ,  Naomi Yoshida

发明人： Yuichi Wada ,  Hiroyuki Yarita ,  Hisashi Aida ,  Naomi Yoshida

IPC分类号： B05D302

CPC分类号： H01L21/76877 ,  C23C18/08 ,  H01L21/28556 ,  H01L21/6715

摘要： The present invention is directed to a film deposition method, which performs one series of processing from formation of the barrier metal up to and including formation of the metal layer in an environment cut off from air. Specifically, the performing of the barrier metal layer formation in a first device and the metal layer formation in a second device; and the transport of a semiconductor wafer from the first device to the second device is performed through a transport pathway that is cut off from air. As a result, the barrier metal layer that is formed is not affected by, for example, natural oxidation and layer quality is improved.

摘要翻译： 本发明涉及一种成膜方法，该方法从在从空气中切断的环境中形成阻挡金属直至包括金属层的形成进行一系列处理。 具体地说，在第一装置中进行阻挡金属层的形成，在第二装置中进行金属层的形成; 并且通过从空气中切断的输送路径，将半导体晶片从第一装置输送到第二装置。 结果，形成的阻挡金属层不受例如天然氧化的影响，并且层质量得到改善。

公开(公告)号：US06852626B1

公开(公告)日：2005-02-08

申请号：US09830611

申请日：1999-10-29

申请人： Yuichi Wada ,  Hiroyuki Yarita ,  Hisashi Aida ,  Naomi Yoshida

发明人： Yuichi Wada ,  Hiroyuki Yarita ,  Hisashi Aida ,  Naomi Yoshida

IPC分类号： H01L21/3205 ,  C23C18/02 ,  H01L21/00 ,  H01L21/288 ,  H01L23/52 ,  H01L21/44

CPC分类号： H01L21/6715 ,  H01L21/288

摘要： In the film deposition method of the present invention, an organometallic fluid, which has an organic metal such as a copper diketonate as its main component, and which precipitates film deposition material through a pyrolytic decomposed reaction, is first prepared; and the organometallic fluid is then applied onto a semiconductor wafer at a certain temperature within the non-reactive range of the organic metal. Afterwards, the wafer is heated to a predetermined temperature, the organic metal within the organometallic fluid that is applied onto the wafer is pyrolytically decomposed, and film is formed on the wafer. With this method, since application is performed at a temperature within the non-reactive range of the organic metal, deposition of the film does not occur, allowing uniform and homogenous application to be performed. Also, since pyrolytic decomposition is performed separately in a later process, a stable reaction may be assured, so that a film of uniform thickness and quality may be deposited.

摘要翻译： 在本发明的膜沉积方法中，首先制备具有二硫酸铜铜等有机金属作为主要成分的有机金属液，并通过热分解反应析出析出材料。 然后将有机金属液体以有机金属的非反应性范围内的一定温度施加到半导体晶片上。 然后将晶片加热到预定温度，施加到晶片上的有机金属液中的有机金属被热分解，并且在晶片上形成膜。 利用该方法，由于在有机金属的非反应性范围内的温度下进行施加，所以不会发生膜的沉积，从而能够进行均匀且均匀的涂布。 此外，由于在后续工艺中分开进行热分解，因此可以确保稳定的反应，从而可以沉积均匀的厚度和质量的膜。

公开(公告)号：US06511538B1

公开(公告)日：2003-01-28

申请号：US09830803

申请日：2001-04-30

申请人： Yuichi Wada ,  Hiroyuki Yarita ,  Hisashl Aida ,  Naomi Yoshida

发明人： Yuichi Wada ,  Hiroyuki Yarita ,  Hisashl Aida ,  Naomi Yoshida

IPC分类号： C30B2504

CPC分类号： C23C2/32 ,  C23C4/123

摘要： When performing film deposition on the surface of a wafer, a turntable supporting the wafer is first rotated. Next, a fluid containing an organic metal is applied onto the wafer via the tip of a nozzle. At the same time, an ultrasound wave is generated by an ultrasound wave generating device, and the turntable is vibrated. Thus the vibrations from the turntable are applied to the wafer, these wafer vibrations allow the fluid containing an organic metal to thoroughly permeate into the detailed patterning of the wafer surface, and said fluid covers its entirety. As a result, film deposition with excellent filling-in characteristics becomes possible.

摘要翻译： 当在晶片的表面上进行薄膜沉积时，首先旋转支撑晶片的转台。 接下来，通过喷嘴的尖端将含有有机金属的流体施加到晶片上。 同时，通过超声波产生装置产生超声波，并且转盘振动。 因此，来自转台的振动被施加到晶片，这些晶片振动允许包含有机金属的流体充分渗透到晶片表面的详细图案化中，并且所述流体覆盖其整体。 结果，具有优异的填充特性的膜沉积成为可能。

公开(公告)号：US09018054B2

公开(公告)日：2015-04-28

申请号：US13815734

申请日：2013-03-15

申请人： Naomi Yoshida ,  Adam Brand

发明人： Naomi Yoshida ,  Adam Brand

IPC分类号： H01L21/84 ,  H01L29/78 ,  H01L21/28 ,  H01L29/49 ,  H01L29/66 ,  H01L29/51

CPC分类号： H01L29/785 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28194 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

摘要： The present invention relates to combinations of materials and fabrication techniques which are useful in the fabrication of filled, metal-comprising gates for use in planar and 3D Field Effect Transistor (FET) structures. The FET structures described are of the kind needed for improved performance in semiconductor device structures produced at manufacturing nodes which implement semiconductor feature sizes in the 15 nm range or lower.

摘要翻译： 本发明涉及可用于制造用于平面和3D场效应晶体管（FET）结构的填充的含金属栅极的材料和制造技术的组合。 描述的FET结构是在实现15nm或更低的半导体特征尺寸的制造节点处产生的半导体器件结构中改善性能所需的FET结构。

公开(公告)号：US20060150032A1

公开(公告)日：2006-07-06

申请号：US10543373

申请日：2004-01-27

申请人： Kouji Furukawa ,  Kazuhiko Nakamura ,  Yasuhiko Handa ,  Naomi Yoshida ,  Jun Shinano ,  Jun Kaida

发明人： Kouji Furukawa ,  Kazuhiko Nakamura ,  Yasuhiko Handa ,  Naomi Yoshida ,  Jun Shinano ,  Jun Kaida

IPC分类号： G06F11/00

CPC分类号： G06F1/3203 ,  G06F1/3231 ,  G06F1/329 ,  G06F11/1461 ,  Y02D10/173 ,  Y02D10/24

摘要： There are provided a state monitoring device and a state management system which monitor a use state of a PC by a user by utilizing detecting results of the human detection sensor effectively. The state monitoring device (10) for detecting whether a user is present at an operative position of PC (20), is connected to the PC (20) on a LAN (30). The information provided for the PC (20) by the state monitoring device (10), is shared with all the PCs (20) on the LAN (30).

摘要翻译： 提供了一种状态监视装置和状态管理系统，其通过有效地利用人体检测传感器的检测结果来监视用户的使用状态。 用于检测用户是否存在于PC（20）的操作位置的状态监视设备（10）被连接到LAN（30）上的PC（20）。 由状态监视装置（10）为PC（20）提供的信息与LAN（30）上的所有PC（20）共享。

公开(公告)号：US20060109022A1

公开(公告)日：2006-05-25

申请号：US10997267

申请日：2004-11-24

申请人： Naomi Yoshida ,  Toshiyuki Nagata

发明人： Naomi Yoshida ,  Toshiyuki Nagata

IPC分类号： G01R31/26

CPC分类号： H01L22/34 ,  G01R31/2831 ,  G01R31/2853 ,  G01R31/2856 ,  H01L2924/0002 ,  H01L2924/00

摘要： A flexible semiconductor test structure that may be incorporated into a semiconductor device is provided. The test structure may include a plurality of test pads designed to physically stress conductive lines to which they are attached during thermal cycling. By utilizing test pads with different dimensions (lengths and/or widths), the effects of thermal stress generated by a plurality of conductive lines having corresponding different dimensions may be simulated.

公开(公告)号：US20140264483A1

公开(公告)日：2014-09-18

申请号：US13815734

申请日：2013-03-15

申请人： Naomi Yoshida ,  Adam Brand

发明人： Naomi Yoshida ,  Adam Brand

IPC分类号： H01L29/49 ,  H01L29/40

CPC分类号： H01L29/785 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28194 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

摘要： The present invention relates to combinations of materials and fabrication techniques which are useful in the fabrication of filled, metal-comprising gates for use in planar and 3D Field Effect Transistor (FET) structures. The FET structures described are of the kind needed for improved performance in semiconductor device structures produced at manufacturing nodes which implement semiconductor feature sizes in the 15 nm range or lower.

摘要翻译： 本发明涉及可用于制造用于平面和3D场效应晶体管（FET）结构的填充的含金属栅极的材料和制造技术的组合。 描述的FET结构是在实现15nm或更低的半导体特征尺寸的制造节点处产生的半导体器件结构中改善性能所需的FET结构。

公开(公告)号：US20120015521A1

公开(公告)日：2012-01-19

申请号：US13093679

申请日：2011-04-25

申请人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

发明人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

IPC分类号： H01L21/308 ,  H01L21/32

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338

摘要： Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.

摘要翻译： 本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。 在一个实施例中，提供了形成用于提高衬底缺陷率的复合非晶碳层的方法。 该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体， 在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下; 以及在所述无定形碳起始层上形成块状无定形碳层，其中用于形成所述块状无定形碳层的烃源气体具有以1:6或更大的稀释剂源气体流量的体积流量，以形成所述复合非晶体 碳层。