公开(公告)号：US20120251957A1

公开(公告)日：2012-10-04

申请号：US13495611

申请日：2012-06-13

申请人： Yuichi Yamamoto ,  Tadayuki Yamaguchi ,  Yasuhito Saiga ,  Yoshiaki Yamada

发明人： Yuichi Yamamoto ,  Tadayuki Yamaguchi ,  Yasuhito Saiga ,  Yoshiaki Yamada

IPC分类号： H01L21/677 ,  G03F7/20

CPC分类号： H01L21/67225 ,  G03F7/70525 ,  G03F7/7075 ,  G03F7/70991 ,  H01L21/67727 ,  H01L21/67733 ,  Y10S414/135

摘要： A substrate transfer method for transferring target substrates proceeds in a substrate processing system for performing processes including a photolithography sequence on the target substrates. The system includes a first automated substrate transfer line configured to transfer the target substrates among a plurality of process sections for respectively performing processes on the target substrates, and a second automated substrate transfer line of a cyclical type dedicated to a plurality of process apparatuses of a photolithography process section, which are configured to perform a series of processes in the photolithography sequence, the second automated substrate transfer line being located relative to the first automated substrate transfer line so as for the target substrates to be transferred therebetween. The method includes, in order to proceed with the photolithography sequence, transferring the target substrates among the process apparatuses in the photolithography process section by use of the second automated substrate transfer line.

摘要翻译： 用于转移目标衬底的衬底转移方法在用于在目标衬底上执行包括光刻序列的处理的衬底处理系统中进行。 该系统包括：第一自动化基板传送线，其被配置为在用于分别在目标基板上执行处理的多个处理部中传送目标基板;以及专用于多个处理装置的循环型第二自动基板传送线 光刻处理部分，被配置为在光刻序列中执行一系列处理，第二自动化基板传送线相对于第一自动基板传送线定位，以使目标基板在其间传输。 该方法包括为了继续进行光刻顺序，通过使用第二自动基板传送线在光刻处理部中的处理装置之间传送目标基板。

公开(公告)号：US08236132B2

公开(公告)日：2012-08-07

申请号：US12302853

申请日：2007-06-15

申请人： Yuichi Yamamoto ,  Tadayuki Yamaguchi ,  Yasuhito Saiga ,  Yoshiaki Yamada

发明人： Yuichi Yamamoto ,  Tadayuki Yamaguchi ,  Yasuhito Saiga ,  Yoshiaki Yamada

IPC分类号： B65G49/07

CPC分类号： H01L21/67225 ,  G03F7/70525 ,  G03F7/7075 ,  G03F7/70991 ,  H01L21/67727 ,  H01L21/67733 ,  Y10S414/135

摘要： A substrate processing system (100) includes a first automated substrate transfer line or main transfer line (20) configured to transfer wafers (W) over the entire system and to transfer wafers to and from respective process sections, and a second automated substrate transfer line or auxiliary transfer line (30) configured to transfer wafers (W) inside a photolithography process section (1a). The auxiliary transfer line (30) is disposed as a transfer mechanism independent of the main transfer line (20). An OHT (31) is configured to travel around on the auxiliary transfer line (30) having a loop shape, so as to transfer wafers (W) to and from and among the respective process apparatuses in the photolithography process section (1a).

摘要翻译： 衬底处理系统（100）包括第一自动化衬底传送线或主传输线（20），其被配置为在整个系统上传送晶片（W）并将晶片传送到相应工艺部分和从相应工艺部分传送晶片，以及第二自动衬底传送线 或辅助传输线（30），其配置成在光刻工艺部分（1a）内转移晶片（W）。 辅助传输线（30）被设置为独立于主传输线（20）的传送机构。 OHT（31）构造成在具有环形的辅助传输线（30）周围行进，以便在光刻处理部分（1a）中将晶片（W）传送到各自的处理装置之间和从各个处理装置传送晶片（W）。

公开(公告)号：US20090185151A1

公开(公告)日：2009-07-23

申请号：US12302853

申请日：2007-06-15

申请人： Yuichi Yamamoto ,  Tadayuki Yamaguchi ,  Yasuhito Saiga ,  Yoshiaki Yamada

发明人： Yuichi Yamamoto ,  Tadayuki Yamaguchi ,  Yasuhito Saiga ,  Yoshiaki Yamada

IPC分类号： G03B27/42 ,  G03B27/32

CPC分类号： H01L21/67225 ,  G03F7/70525 ,  G03F7/7075 ,  G03F7/70991 ,  H01L21/67727 ,  H01L21/67733 ,  Y10S414/135

摘要： A substrate processing system (100) includes a first automated substrate transfer line or main transfer line (20) configured to transfer wafers (W) over the entire system and to transfer wafers to and from respective process sections, and a second automated substrate transfer line or auxiliary transfer line (30) configured to transfer wafers (W) inside a photolithography process section (1a). The auxiliary transfer line (30) is disposed as a transfer mechanism independent of the main transfer line (20). An OHT (31) is configured to travel around on the auxiliary transfer line (30) having a loop shape, so as to transfer wafers (W) to and from and among the respective process apparatuses in the photolithography process section (1a).

摘要翻译： 衬底处理系统（100）包括第一自动化衬底传送线或主传输线（20），其被配置为在整个系统上传送晶片（W）并将晶片传送到相应工艺部分和从相应工艺部分传送晶片，以及第二自动衬底传送线 或辅助传输线（30），其配置成在光刻工艺部分（1a）内转移晶片（W）。 辅助传输线（30）被设置为独立于主传输线（20）的传送机构。 OHT（31）构造成在具有环形的辅助传输线（30）周围行进，以便在光刻处理部分（1a）中将晶片（W）传送到各自的处理装置之间和之间。

公开(公告)号：US08702370B2

公开(公告)日：2014-04-22

申请号：US13495611

申请日：2012-06-13

申请人： Yuichi Yamamoto ,  Tadayuki Yamaguchi ,  Yasuhito Saiga ,  Yoshiaki Yamada

发明人： Yuichi Yamamoto ,  Tadayuki Yamaguchi ,  Yasuhito Saiga ,  Yoshiaki Yamada

IPC分类号： H01L21/677

CPC分类号： H01L21/67225 ,  G03F7/70525 ,  G03F7/7075 ,  G03F7/70991 ,  H01L21/67727 ,  H01L21/67733 ,  Y10S414/135

摘要： A substrate transfer method for transferring target substrates proceeds in a substrate processing system for performing processes including a photolithography sequence on the target substrates. The system includes a first automated substrate transfer line configured to transfer the target substrates among a plurality of process sections for respectively performing processes on the target substrates, and a second automated substrate transfer line of a cyclical type dedicated to a plurality of process apparatuses of a photolithography process section, which are configured to perform a series of processes in the photolithography sequence, the second automated substrate transfer line being located relative to the first automated substrate transfer line so as for the target substrates to be transferred therebetween. The method includes, in order to proceed with the photolithography sequence, transferring the target substrates among the process apparatuses in the photolithography process section by use of the second automated substrate transfer line.

摘要翻译： 用于转移目标衬底的衬底转移方法在用于在目标衬底上执行包括光刻序列的处理的衬底处理系统中进行。 该系统包括：第一自动化基板传送线，其被配置为在用于分别在目标基板上执行处理的多个处理部中传送目标基板;以及专用于多个处理装置的循环型第二自动基板传送线 光刻处理部分，被配置为在光刻序列中执行一系列处理，第二自动化基板传送线相对于第一自动基板传送线定位，以使目标基板在其间传输。 该方法包括为了继续进行光刻顺序，通过使用第二自动基板传送线在光刻处理部中的处理装置之间传送目标基板。

公开(公告)号：US07901149B2

公开(公告)日：2011-03-08

申请号：US12307936

申请日：2007-07-19

申请人： Yoshiaki Yamada ,  Tadayuki Yamaguchi ,  Yuuichi Yamamoto ,  Yasuhito Saiga

发明人： Yoshiaki Yamada ,  Tadayuki Yamaguchi ,  Yuuichi Yamamoto ,  Yasuhito Saiga

IPC分类号： G03B13/00 ,  G03D5/00

CPC分类号： H01L21/0274 ,  G03F7/2022 ,  G03F7/38 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/67748

摘要： A substrate on which a resist film has been formed is transferred to an aligner and subjected to exposure processing. The substrate is then subjected to post-exposure baking in a second processing system. The substrate is then transferred again to the aligner and subjected to exposure processing. The substrate for which exposure processing for the second time has been finished is transferred to a first processing system and again subjected to post-exposure baking. The time periods from the ends of the exposure processing to the starts of the post-exposure baking for the first time and the second time are controlled to be equal. In pattern forming processing in which exposure processing is performed a plurality of times between the resist film forming processing and the developing treatment, a pattern with a desired dimension can be finally formed.

摘要翻译： 其上形成有抗蚀剂膜的基板被转印到对准器并进行曝光处理。 然后在第二处理系统中对基板进行曝光后烘烤。 然后将衬底再次转移到对准器并进行曝光处理。 第二次曝光处理已完成的基板被转印到第一处理系统，并再次进行曝光后烘烤。 从曝光处理结束到第一次和第二次的曝光后烘烤开始的时间段被控制为相等。 在抗蚀剂膜形成处理和显影处理之间进行多次曝光处理的图案形成处理中，可以最终形成具有期望尺寸的图案。

公开(公告)号：US08007968B2

公开(公告)日：2011-08-30

申请号：US12307971

申请日：2007-07-25

申请人： Yoshiaki Yamada ,  Tadayuki Yamaguchi ,  Yuuichi Yamamoto ,  Yasuhito Saiga ,  Kazuo Sawai

发明人： Yoshiaki Yamada ,  Tadayuki Yamaguchi ,  Yuuichi Yamamoto ,  Yasuhito Saiga ,  Kazuo Sawai

IPC分类号： G03C5/00 ,  G03F9/00

CPC分类号： H01L21/31144 ,  H01L21/0274 ,  H01L21/0276

摘要： In the present invention, patterning for the first time is performed on a film to be worked above the front surface of a substrate, and the actual dimension of the pattern formed by the patterning for the first time is measured. Based on the dimension measurement result of the patterning or the first time, the condition of patterning for the second time is then set. In this event, the condition of the patterning for the second time is set so that a difference between the dimension of the patterning for the first time and its target dimension is equal to a difference between the dimension of the patterning for the second time and its target dimension. Thereafter, the patterning for the second time is performed under the set patterning condition.

摘要翻译： 在本发明中，首先对基板表面的被加工膜进行第一次的图案化，并且测量通过第一次图案化形成的图案的实际尺寸。 基于图案化或第一次的尺寸测量结果，然后设置第二次的图案化条件。 在这种情况下，第二次图案化的条件被设定为使得第一次图案化的尺寸与其目标尺寸之间的差异等于第二次图案化的尺寸与其之间的差异 目标维度。 此后，在设定的图案化条件下进行第二次的图案化。

公开(公告)号：US20090258304A1

公开(公告)日：2009-10-15

申请号：US12307971

申请日：2007-07-25

申请人： Yoshiaki Yamada ,  Tadayuki Yamaguchi ,  Yuuichi Yamamoto ,  Yasuhito Saiga ,  Kazuo Sawai

发明人： Yoshiaki Yamada ,  Tadayuki Yamaguchi ,  Yuuichi Yamamoto ,  Yasuhito Saiga ,  Kazuo Sawai

IPC分类号： G03F7/20 ,  G06F17/50

CPC分类号： H01L21/31144 ,  H01L21/0274 ,  H01L21/0276

摘要： In the present invention, patterning for the first time is performed on a film to be worked above the front surface of a substrate, and the actual dimension of the pattern formed by the patterning for the first time is measured. Based on the dimension measurement result of the patterning or the first time, the condition of patterning for the second time is then set. In this event, the condition of the patterning for the second time is set so that a difference between the dimension of the patterning for the first time and its target dimension is equal to a difference between the dimension of the patterning for the second time and its target dimension. Thereafter, the patterning for the second time is performed under the set patterning condition.

摘要翻译： 在本发明中，首先对基板表面的被加工膜进行第一次的图案化，并且测量通过第一次图案化形成的图案的实际尺寸。 基于图案化或第一次的尺寸测量结果，然后设置第二次的图案化条件。 在这种情况下，第二次图案化的条件被设定为使得第一次图案化的尺寸与其目标尺寸之间的差异等于第二次图案化的尺寸与其之间的差异 目标维度。 此后，在设定的图案化条件下进行第二次的图案化。

公开(公告)号：US20090208879A1

公开(公告)日：2009-08-20

申请号：US12307936

申请日：2007-07-19

申请人： Yoshiaki Yamada ,  Tadayuki Yamaguchi ,  Yuuichi Yamamoto ,  Yasuhito Saiga

发明人： Yoshiaki Yamada ,  Tadayuki Yamaguchi ,  Yuuichi Yamamoto ,  Yasuhito Saiga

IPC分类号： G03F7/20 ,  G03B27/52

CPC分类号： H01L21/0274 ,  G03F7/2022 ,  G03F7/38 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/67748

摘要： In the present invention, a substrate on which a resist film has been formed is transferred to an aligner and subjected to exposure processing. The substrate is then subjected to post-exposure baking in a second processing system. The substrate is then transferred again to the aligner and subjected to exposure processing. The substrate for which exposure processing for the second time has been finished is transferred to a first processing system and again subjected to post-exposure baking. The time periods from the ends of the exposure processing to the starts of the post-exposure baking for the first time and the second time are controlled to be equal. According to the present invention, in pattern forming processing in which exposure processing is performed a plurality of times between the resist film forming processing and the developing treatment, a pattern with a desired dimension can be finally formed.

摘要翻译： 在本发明中，将形成有抗蚀剂膜的基板转印到对准器并进行曝光处理。 然后在第二处理系统中对基板进行曝光后烘烤。 然后将衬底再次转移到对准器并进行曝光处理。 第二次曝光处理已完成的基板被转印到第一处理系统，并再次进行曝光后烘烤。 从曝光处理结束到第一次和第二次的曝光后烘烤开始的时间段被控制为相等。 根据本发明，在抗蚀剂膜形成处理和显影处理之间进行多次曝光处理的图案形成处理中，可以最终形成具有期望尺寸的图案。

公开(公告)号：US20080038671A1

公开(公告)日：2008-02-14

申请号：US11782233

申请日：2007-07-24

申请人： Taro YAMAMOTO ,  Hitoshi Kosugi ,  Yoshiaki Yamada ,  Yasuhito Saiga

发明人： Taro YAMAMOTO ,  Hitoshi Kosugi ,  Yoshiaki Yamada ,  Yasuhito Saiga

IPC分类号： G03B27/42 ,  G03C5/00

CPC分类号： G03F7/38 ,  G03F7/2041 ,  G03F7/70341

摘要： A pattern forming method includes forming a resist film or sequentially forming a resist film and a protection film in this order on a surface of a substrate; then, performing immersion light exposure that includes immersing the resist film or the resist film and the protection film formed on the substrate in a liquid during light exposure, thereby forming a predetermined light exposure pattern on the resist film; and performing a development process of the light exposure pattern by use of a development liquid, thereby forming a predetermined resist pattern. After the immersion light exposure and before the development process, the method further includes performing a hydrophilic process of turning a surface of the resist film or the protection film serving as a substrate surface into a hydrophilic state to allow the substrate surface to be wetted with the development liquid overall.

摘要翻译： 图案形成方法包括在基板的表面上依次形成抗蚀剂膜或依次形成抗蚀剂膜和保护膜; 然后，在曝光期间进行浸渍曝光，其中包括将抗蚀剂膜或抗蚀剂膜和形成在基板上的保护膜浸入液体中，从而在抗蚀剂膜上形成预定的曝光图案; 并通过使用显影液进行曝光图案的显影处理，由此形成预定的抗蚀剂图案。 在浸没曝光之后和显影处理之前，该方法还包括进行将抗蚀剂膜或用作基板表面的保护膜的表面转动成亲水性的亲水处理，以允许基板表面被 开发液体整体。

公开(公告)号：US08889337B2

公开(公告)日：2014-11-18

申请号：US11934308

申请日：2007-11-02

申请人： Hitoshi Kosugi ,  Taro Yamamoto ,  Yoshiaki Yamada ,  Yasuhito Saiga

发明人： Hitoshi Kosugi ,  Taro Yamamoto ,  Yoshiaki Yamada ,  Yasuhito Saiga

IPC分类号： G03F7/09 ,  B05C11/02 ,  G03F7/20 ,  G03F7/11 ,  H01L21/67

CPC分类号： G03F7/2041 ,  G03F7/11 ,  H01L21/6708 ,  H01L21/67115 ,  H01L21/6715

摘要： Such a film forming method is provided that can prevent peeling of surface films including a resist film from a substrate during immersion exposure.The film forming method includes the steps of forming surface films including a resist film and a protective film covering the resist film over a surface of a wafer, and forming an edge cap film by supplying an edge cap film material to at least a boundary portion including a periphery of the wafer and peripheries of the surface films such as the protective film.

摘要翻译： 提供这样的成膜方法，其可以防止在浸没曝光期间从基底上包括抗蚀剂膜的表面膜的剥离。 成膜方法包括以下步骤：在晶片的表面上形成包括抗蚀剂膜和覆盖抗蚀剂膜的保护膜的表面膜，以及通过将边缘帽膜材料供给到至少包括 晶片的周边以及诸如保护膜的表面膜的周边。