公开(公告)号：US20120201387A1

公开(公告)日：2012-08-09

申请号：US13501441

申请日：2010-02-15

申请人： Yuji Matsuda ,  Tatsuya Obata

发明人： Yuji Matsuda ,  Tatsuya Obata

IPC分类号： H04H40/45

CPC分类号： H04H40/72 ,  H04H40/45 ,  H04H40/63

摘要： An FM radio receiving apparatus includes a stereo decoder unit 301 for separating a stereo signal of a received FM stereo broadcasting wave into voice signals of individual channels, a binarization processing unit 302 for binarizing the individual voice signals of the channels separated by the stereo decoder unit, and a correlation deciding unit 303 for storing the voice signals of the individual channels binarized by the binarization processing unit 302 for a prescribed time period, and for deciding correlation from the voice signals of the individual channels stored, and the FM radio receiving apparatus controls the degree of separation of the individual channels of the stereo signal in accordance with the correlation decided by the correlation deciding unit 303.

摘要翻译： FM无线电接收装置包括立体声解码器单元301，用于将接收的FM立体声广播波的立体声信号分离成各个声道的语音信号;二进制化处理单元302，用于将由立体声解码器单元分离的频道的各个声音信号二值化 以及相关决定部303，用于存储由二进制化处理部302二值化的规定时间段的各个频道的语音信号，并且根据存储的各个频道的语音信号来决定相关性，FM无线接收装置控制 根据由相​​关判定单元303决定的相关度，立体声信号的各声道的分离程度。

公开(公告)号：US06492665B1

公开(公告)日：2002-12-10

申请号：US09714130

申请日：2000-11-17

申请人： Susumu Akamatsu ,  Toshitaka Hibi ,  Takehiko Ueda ,  Tadami Shimizu ,  Yoshiaki Kato ,  Tatsuya Obata ,  Toyoyuki Shimazaki

发明人： Susumu Akamatsu ,  Toshitaka Hibi ,  Takehiko Ueda ,  Tadami Shimizu ,  Yoshiaki Kato ,  Tatsuya Obata ,  Toyoyuki Shimazaki

IPC分类号： H01L31072

CPC分类号： H01L29/665 ,  H01L21/76897 ,  H01L21/823475 ,  H01L29/1045 ,  H01L29/6653 ,  H01L29/66598 ,  H01L29/7833 ,  Y10S257/90

摘要： After a gate insulating film, a gate electrode and an on-gate protective layer have been formed in this order on an Si substrate, lightly-doped source/drain regions are formed in the substrate. First and second sidewalls are formed on the sides of the gate electrode and then heavily-doped source/drain regions are formed by implanting dopant ions using these sidewalls as a mask. After the second sidewall has been selectively removed, pocket implanted regions are formed and an overall protective film is deposited. Thereafter, an interlevel dielectric film is deposited, contact holes are formed to reach the heavily-doped source/drain regions and then plug electrodes are formed. Since the second sidewall has already been removed when the overall protective film is deposited, the gap between adjacent gate electrodes is not completely filled in. Accordingly, it is possible to provide a method for fabricating a semiconductor device contributing to device miniaturization without causing a shortcircuit between the gate electrode and a contact member.

摘要翻译： 在栅极绝缘膜之后，在Si衬底上依次形成栅电极和栅极保护层，在衬底中形成轻掺杂源极/漏极区。 第一和第二侧壁形成在栅电极的侧面上，然后通过使用这些侧壁作为掩模注入掺杂剂离子形成重掺杂的源/漏区。 在第二侧壁被选择性地去除之后，形成袋注入区域并且沉积整个保护膜。 此后，沉积层间电介质膜，形成接触孔以到达重掺杂的源/漏区，然后形成插塞电极。 由于当整个保护膜沉积时第二侧壁已经被去除，所以相邻栅电极之间的间隙没有被完全填充。因此，可以提供一种用于制造半导体器件的方法，该半导体器件有助于器件小型化而不引起短路 在栅电极和接触构件之间。

公开(公告)号：US06180472B2

公开(公告)日：2001-01-30

申请号：US09361219

申请日：1999-07-27

申请人： Susumu Akamatsu ,  Toshitaka Hibi ,  Takehiko Ueda ,  Tadami Shimizu ,  Yoshiaki Kato ,  Tatsuya Obata ,  Toyoyuki Shimazaki

发明人： Susumu Akamatsu ,  Toshitaka Hibi ,  Takehiko Ueda ,  Tadami Shimizu ,  Yoshiaki Kato ,  Tatsuya Obata ,  Toyoyuki Shimazaki

IPC分类号： H01L21336

CPC分类号： H01L29/665 ,  H01L21/76897 ,  H01L21/823475 ,  H01L29/1045 ,  H01L29/6653 ,  H01L29/66598 ,  H01L29/7833 ,  Y10S257/90

摘要： After a gate insulating film, a gate electrode and an on-gate protective layer have been formed in this order on an Si substrate, lightly-doped source/drain regions are formed in the substrate. First and second sidewalls are formed on the sides of the gate electrode and then heavily-doped source/drain regions are formed by implanting dopant ions using these sidewalls as a mask. After the second sidewall has been selectively removed, pocket implanted regions are formed and an overall protective film is deposited. Thereafter, an interlevel dielectric film is deposited, contact holes are formed to reach the heavily-doped source/drain regions and then plug electrodes are formed. Since the second sidewall has already been removed when the overall protective film is deposited, the gap between adjacent gate electrodes is not completely filled in. Accordingly, it is possible to provide a method for fabricating a semiconductor device contributing to device miniaturization without causing a shortcircuit between the gate electrode and a contact member.

摘要翻译： 在栅极绝缘膜之后，在Si衬底上依次形成栅电极和栅极保护层，在衬底中形成轻掺杂源极/漏极区。 第一和第二侧壁形成在栅电极的侧面上，然后通过使用这些侧壁作为掩模注入掺杂剂离子形成重掺杂的源/漏区。 在第二侧壁被选择性地去除之后，形成袋注入区域并且沉积整个保护膜。 此后，沉积层间电介质膜，形成接触孔以到达重掺杂的源/漏区，然后形成插塞电极。 由于当整个保护膜沉积时第二侧壁已经被去除，所以相邻栅电极之间的间隙没有被完全填充。因此，可以提供一种用于制造半导体器件的方法，该半导体器件有助于器件小型化而不引起短路 在栅电极和接触构件之间。