摘要:
Disclosed are 5,11-Dihydrodibenzo[b,e][1,4]oxazepine derivatives such as (R)-(+)-5,11-dihydro-5-[1-(4-methoxyphenethyl)-2-pyrrolidinylmethyl]dibenzo[b,e][1,4]oxazepine and (R)-(+)-5,11-dihydro-5-[1-(4-fluorophenethyl)-2-pyrrolidinylmethyl]dibenzo[b,e][1,4]oxazepine, stereoisomers thereof, pharmacologically acceptable salts thereof, or hydrates thereof and a pharmaceutical composition conating the 5,11-Dihydrodibenzo[b,e][1,4]oxazepine derivatives. The derivatives have an excellent activity of improving a digestive tract moving function and are free of side effect.
摘要:
Disclosed are 5,11-Dihydrodibenzo[b,e][1,4]oxazepine derivatives such as (R)-(+)-5,11-dihydro-5-[1-(4-methoxyphenethyl)-2-pyrrolidinylmethyl]dibenzo[b,e][1,4]oxazepine and (R)-(+)-5,11-dihydro-5-[1-(4-fluorophenethyl)-2-pyrrolidinylmethyl]dibenzo[b,e][1,4]oxazepine, stereoisomers thereof, pharmacologically acceptable salts thereof, or hydrates thereof and a phramaceutical composition conating the 5,11-Dihydrodibenzo[b,e][1,4]oxazepine derivatives. The derivatives have an excellent activity of improving a digestive tract moving function and are free of side effect.
摘要:
An integrated circuit device includes first to Nth circuit blocks CB1 to CBN, a first interface region disposed along a fourth side and on the D2 side of the first to Nth circuit blocks CB1 to CBN, and a second interface region disposed along a second side and on the D4 side of the first to Nth circuit blocks CB1 to CBN. A local line LLG formed using a wiring layer lower than an Ith layer is provided between the adjacent circuit blocks as at least one of a signal line and a power supply line. Global lines GLG and GLD formed using the Ith or higher wiring layer are provided along the direction D1 over the circuit block disposed between the nonadjacent circuit blocks as at least one of a signal line and a power supply line.
摘要:
An integrated circuit device includes first to Nth circuit blocks CB1 to CBN, a first interface region disposed along a fourth side and on the D2 side of the first to Nth circuit blocks CB1 to CBN, and a second interface region disposed along a second side and on the D4 side of the first to Nth circuit blocks CB1 to CBN. A local line LLG formed using a wiring layer lower than an Ith layer is provided between the adjacent circuit blocks as at least one of a signal line and a power supply line. Global lines GLG and GLD formed using the Ith or higher wiring layer are provided along the direction D1 over the circuit block disposed between the nonadjacent circuit blocks as at least one of a signal line and a power supply line.
摘要:
Each of RAM blocks provided in a display memory and disposed along a first direction in which bitlines extend includes a sense amplifier circuit which outputs M-bit data upon one wordline selection (M is an integer larger than 1). At least M memory cells are arranged in each of the RAM blocks along a second direction in which wordlines extend. M sense amplifier cells to which M-bit data read from the M memory cells is input are provided in the sense amplifier circuit. L sense amplifier cells of the M sense amplifier cells are disposed at a position corresponding to L memory cells adjacent in the second direction (L is an integer which satisfies 2≦L
摘要翻译:提供在显示存储器中并沿着位线延伸的第一方向布置的每个RAM块包括读取放大器电路,其在一个字线选择(M是大于1的整数)上输出M位数据。 至少M个存储单元沿着字线延伸的第二方向布置在每个RAM块中。 在读出放大器电路中设置有从M个存储单元读取M位数据的M个读出放大器单元。 M个读出放大器单元的L个读出放大器单元配置在与第二方向相邻的L个存储单元对应的位置(L为满足2 <= L
摘要:
An integrated circuit device includes a display memory and a data read control circuit. The data read control circuit controls data reading so that data of pixels corresponding to a plurality of signal lines is read out by N-time reading in one horizontal scan period of a display panel (N is an integer larger than 1). The display memory includes a plurality of sense amplifier cells respectively connected with a plurality of bitlines. L sense amplifier cells (L is an integer larger than 1) respectively connected with the bitlines of L memory cells adjacent in a first direction (wordline direction) in which wordlines extend are disposed along a second direction (bitline direction) in which the bitlines extend.
摘要:
A semiconductor integrated circuit includes N pad rows in which pads are respectively arranged, and electrostatic discharge protection elements disposed in a lower layer of the N pad rows and connected with each pad in the N pad rows. The electrostatic discharge protection elements are disposed in a lower layer of regions at least partially including each of the N pads.
摘要:
A semiconductor integrated circuit includes N pad rows in which pads are respectively arranged, and electrostatic discharge protection elements disposed in a lower layer of the N pad rows and connected with each pad in the N pad rows. The electrostatic discharge protection elements are disposed in a lower layer of regions at least partially including each of the N pads.
摘要:
An integrated circuit device includes at least one data driver block for driving data lines, a plurality of control transistors TC1 and TC2, each of the control transistors being provided corresponding to each output line of the data driver block and controlled by using a common control signal, and a pad arrangement region in which data driver pads P1 and P2 for electrically connecting the data lines and the output lines QL1 and QL2 of the data driver block are disposed. The control transistors TC1 and TC2 are disposed in the pad arrangement region.
摘要:
An integrated circuit device includes a display memory and a data read control circuit. The data read control circuit controls data reading so that data of pixels corresponding to a plurality of signal lines is read out by N-time reading in one horizontal scan period of a display panel (N is an integer larger than 1). The display memory includes a plurality of sense amplifier cells respectively connected with a plurality of bitlines. L sense amplifier cells (L is an integer larger than 1) respectively connected with the bitlines of L memory cells adjacent in a first direction (wordline direction) in which wordlines extend are disposed along a second direction (bitline direction) in which the bitlines extend.