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公开(公告)号：US20130149555A1
公开(公告)日：2013-06-13
申请号：US13808487
申请日：2011-07-06
IPC分类号： H01B5/14
CPC分类号： H01B5/14 , C08J7/045 , C08J7/08 , C08J2323/06 , C08J2483/04 , C23C14/086 , C23C14/562 , C23C14/5806
摘要： An object of the present invention is to manufacture a long transparent conductive film comprising a transparent film substrate and a crystalline indium composite oxide film formed on the transparent film substrate. The manufacturing method of the present invention includes an amorphous laminate formation step of forming an amorphous film of an indium composite oxide containing indium and a tetravalent metal on the long transparent film substrate with a sputtering method, and a crystallization step of continuously feeding the long transparent film substrate on which the amorphous film is formed into a furnace and crystallizing the amorphous film. The temperature inside the furnace in the crystallization step is preferably 170 to 220° C. The change rate of the film length in the crystallization step is preferably +2.5% or less.
摘要翻译： 本发明的目的在于制造在透明膜基板上形成的透明膜基板和结晶铟复合氧化物膜的长透明导电膜。 本发明的制造方法包括：通过溅射法在长透明膜基板上形成含有铟和四价金属的铟复合氧化物的非晶质膜的无定形层叠体形成工序，以及连续供给长透明性的结晶工序 将其上形成无定形薄膜的薄膜基片放入炉中并使无定形薄膜结晶。 结晶步骤中的炉内的温度优选为170〜220℃。结晶步骤中的膜长度的变化率优选为+ 2.5％以下。
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公开(公告)号：US09588606B2
公开(公告)日：2017-03-07
申请号：US13592718
申请日：2012-08-23
申请人： Yuka Yamazaki , Tomotake Nashiki , Hideo Sugawara
发明人： Yuka Yamazaki , Tomotake Nashiki , Hideo Sugawara
CPC分类号： C23C14/086 , C23C14/024 , C23C14/35 , C23C14/5873 , G06F3/041 , G06F2203/04103 , Y10T428/266
摘要： The present invention is a transparent conductive film having a flexible transparent base and a transparent conductive layer made of a crystalline conductive metal oxide that is formed on one surface of the flexible transparent base, in which the thickness of the flexible transparent base is 80 μm or less, and the difference H1−H2 between the dimensional change rate H1 when the transparent conductive film is heated at 140° C. for 30 minutes and the dimensional change rate H2 when the transparent conductive layer is removed from the transparent conductive film by etching and the transparent conductive film is heated at 140° C. for 30 minutes is −0.02 to 0.043%. Because of that, the level difference at the pattern boundary when the film is assembled into a touch panel, etc. is decreased and the deterioration of the appearance can be also suppressed.
摘要翻译： 本发明是一种透明导电膜，其具有柔性透明基底和由结晶导电金属氧化物制成的透明导电层，该透明导电层形成在柔性透明基底的一个表面上，柔性透明基底的厚度为80μm， 并且当透明导电膜在140℃下加热30分钟时的尺寸变化率H1与通过蚀刻从透明导电膜去除透明导电膜时的尺寸变化率H2之间的差异H1-H2以及 透明导电膜在140℃下加热30分钟，为-0.02〜0.043％。 因此，当将膜组装成触摸面板等时的图案边界处的水平差降低，并且还可以抑制外观的劣化。
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公开(公告)号：US20130105301A1
公开(公告)日：2013-05-02
申请号：US13808478
申请日：2011-07-06
申请人： Yuka Yamazaki , Tomotake Nashiki , Hideo Sugawara
发明人： Yuka Yamazaki , Tomotake Nashiki , Hideo Sugawara
IPC分类号： C23C14/08
CPC分类号： C23C14/086 , C23C14/024 , C23C14/562 , C23C14/5806
摘要： An object of the present invention is to manufacture a long transparent conductive film comprising a transparent film substrate and a crystalline indium composite oxide film formed on the transparent film substrate. The manufacturing method of the present invention includes an amorphous laminate formation step of forming an amorphous film of an indium composite oxide containing indium and a tetravalent metal on the long transparent film substrate with a sputtering method, and a crystallization step of continuously feeding the long transparent film substrate on which the amorphous film is formed into a furnace and crystallizing the amorphous film. The indium composite oxide preferably contains more than 0 parts by weight and 15 parts by weight or less of the tetravalent metal based on 100 parts by weight of the total of indium and the tetravalent metal.
摘要翻译： 本发明的目的在于制造在透明膜基板上形成的透明膜基板和结晶铟复合氧化物膜的长透明导电膜。 本发明的制造方法包括：通过溅射法在长透明膜基板上形成含有铟和四价金属的铟复合氧化物的非晶质膜的无定形层叠体形成工序，以及连续供给长透明性的结晶工序 将其上形成无定形薄膜的薄膜基片放入炉中并使无定形薄膜结晶。 基于100重量份的铟和四价金属的合计，铟复合氧化物优选含有0重量份以上15重量份以下的四价金属。
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公开(公告)号：US20130048348A1
公开(公告)日：2013-02-28
申请号：US13592718
申请日：2012-08-23
申请人： Yuka Yamazaki , Tomotake Nashiki , Hideo Sugawara
发明人： Yuka Yamazaki , Tomotake Nashiki , Hideo Sugawara
CPC分类号： C23C14/086 , C23C14/024 , C23C14/35 , C23C14/5873 , G06F3/041 , G06F2203/04103 , Y10T428/266
摘要： The present invention is a transparent conductive film having a flexible transparent base and a transparent conductive layer made of a crystalline conductive metal oxide that is formed on one surface of the flexible transparent base, in which the thickness of the flexible transparent base is 80 μm or less, and the difference H1−H2 between the dimensional change rate H1 when the transparent conductive film is heated at 140° C. for 30 minutes and the dimensional change rate H2 when the transparent conductive layer is removed from the transparent conductive film by etching and the transparent conductive film is heated at 140° C. for 30 minutes is −0.02 to 0.043%. Because of that, the level difference at the pattern boundary when the film is assembled into a touch panel, etc. is decreased and the deterioration of the appearance can be also suppressed.
摘要翻译： 本发明是一种透明导电膜，其具有柔性透明基底和由结晶导电金属氧化物制成的透明导电层，该透明导电层形成在柔性透明基底的一个表面上，柔性透明基底的厚度为80μm， 并且当透明导电膜在140℃下加热30分钟时的尺寸变化率H1与通过蚀刻从透明导电膜去除透明导电膜时的尺寸变化率H2之间的差异H1-H2以及 透明导电膜在140℃下加热30分钟，为-0.02〜0.043％。 因此，当将膜组装成触摸面板等时的图案边界处的水平差降低，并且还可以抑制外观的劣化。
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公开(公告)号：US09910545B2
公开(公告)日：2018-03-06
申请号：US12503395
申请日：2009-07-15
CPC分类号： G06F3/044
摘要： The transparent conductive film of the present invention is a transparent conductive film, comprising: a transparent film substrate; a patterned transparent conductive layer formed on one side of the transparent film substrate; and a colored layer provided on at least one of an opposite side of the transparent conductive layer from the transparent film substrate and an opposite side of the transparent film substrate from the transparent conductive layer, wherein the colored layer has an average absorptance of from 35% to 90% for light in the wavelength range of from 380 nm to 780 nm.
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公开(公告)号：US09523147B2
公开(公告)日：2016-12-20
申请号：US13458640
申请日：2012-04-27
申请人： Tomotake Nashiki , Yoshimasa Sakata , Hideo Sugawara , Kenkichi Yagura , Akira Hamada , Yoshihisa Ito , Kuniaki Ishibashi
发明人： Tomotake Nashiki , Yoshimasa Sakata , Hideo Sugawara , Kenkichi Yagura , Akira Hamada , Yoshihisa Ito , Kuniaki Ishibashi
CPC分类号： C23C14/562 , C23C14/086 , C23C14/14 , C23C14/34 , C23C14/568 , H01L21/67132 , H01L21/67173 , Y10T428/31678
摘要： A method of continuously subjecting an elongated substrate to vacuum film formation is disclosed. The method comprises the steps of: feeding a first substrate from a first roll chamber in a first direction from the first roll chamber toward a second roll chamber; degassing the first substrate; forming a film of a second material on the first substrate, in a second film formation chamber; and rolling up the first substrate in the second roll chamber, thereby producing the first substrate, and comprises similar steps to produce a second substrate. In advance of producing the first substrate with the second material film, the first cathode electrode of the first film formation chamber is removed from the first film formation chamber, and, in advance of producing the second substrate with the first material film, the second cathode electrode of the second film formation chamber is removed from the second film formation chamber.
摘要翻译： 公开了一种连续使细长衬底经受真空成膜的方法。 该方法包括以下步骤：将来自第一辊室的第一衬底沿第一方向从第一辊室向第二辊室供给; 对第一衬底进行脱气; 在第二成膜室中在第一基板上形成第二材料的膜; 并卷起第二辊室中的第一基板，从而制造第一基板，并且包括类似的步骤以产生第二基板。 在利用第二材料膜制造第一基板之前，第一成膜室的第一阴极电极从第一成膜室除去，并且在用第一材料膜制造第二基板之前，第二阴极 从第二成膜室除去第二成膜室的电极。
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公开(公告)号：US09513747B2
公开(公告)日：2016-12-06
申请号：US13271625
申请日：2011-10-12
CPC分类号： G06F3/044 , G06F3/045 , G06F2203/04103 , Y10T428/24802 , Y10T428/24868 , Y10T428/2495
摘要： The present invention provides a transparent conductive film in which the difference in visibility between the pattern portion and the pattern opening portion is kept small even when a transparent conductive layer is patterned. The transparent conductive film has a first dielectric layer, a second dielectric layer, and a transparent conductive layer in this order on a transparent film substrate, a thickness d21 of the first dielectric layer is larger than a thickness d22 of the second dielectric layer, the thickness d21 of the first dielectric layer is 8 to 40 nm and the thickness d22 of the second dielectric layer is 5 to 25 nm, and a difference between the thickness d21 of the first dielectric layer and the thickness d22 of the second dielectric layer, d21-d22, is 3 to 30 nm.
摘要翻译： 本发明提供了一种透明导电膜，其中即使在透明导电层被图案化时，图案部分和图案开口部分之间的可见性差也保持较小。 透明导电膜在透明膜基板上依次具有第一电介质层，第二电介质层和透明导电层，第一电介质层的厚度d21大于第二电介质层的厚度d22， 第一电介质层的厚度d21为8〜40nm，第二电介质层的厚度d22为5〜25nm，第一电介质层的厚度d21与第二电介质层的厚度d22之差d21 -d22，为3〜30nm。
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8.发明授权Method for double-side vacuum film formation and laminate obtainable by the method 有权双面真空成膜方法和通过该方法得到的层压体公开(公告)号：US09297066B2
公开(公告)日：2016-03-29
申请号：US13559041
申请日：2012-07-26
申请人： Tomotake Nashiki , Yoshimasa Sakata , Hideo Sugawara , Kenkichi Yagura , Akira Hamada , Yoshihisa Ito , Kuniaki Ishibashi
发明人： Tomotake Nashiki , Yoshimasa Sakata , Hideo Sugawara , Kenkichi Yagura , Akira Hamada , Yoshihisa Ito , Kuniaki Ishibashi
CPC分类号： C23C16/44 , C23C14/021 , C23C14/562 , C23C16/06 , C23C16/56 , Y10T428/31678
摘要： The film formation method comprises the steps of: unrolling and feeding an elongated substrate wound in a roll form from a first roll chamber in a direction from the first roll chamber toward a second roll chamber, using a first surface as a surface for film formation; degassing the fed substrate; forming a first material film on the first surface of the degassed substrate in a first film formation chamber; forming a second material film on the first material film in a second film formation chamber; taking up the substrate in a roll form in the second roll chamber, the substrate having the material films formed thereon; unrolling and feeding the taken up substrate from the first roll chamber in the direction, using a second surface opposite the first surface of the substrate as a surface for film formation; and repeating all the above treatments.
摘要翻译： 成膜方法包括以下步骤：使用第一表面作为成膜表面，从第一辊室向第一辊室向第二辊室展开卷绕并卷绕成辊状的细长基材; 对进料基材进行脱气; 在第一成膜室中在脱气基板的第一表面上形成第一材料膜; 在第二成膜室中在第一材料膜上形成第二材料膜; 在第二辊室中以辊状卷取基板，其中形成有材料膜的基板; 使用与基板的第一表面相对的第二表面作为成膜的表面，使卷取的基板从第一辊室沿着该方向展开和进给; 并重复所有上述处理。
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9.发明授权Method for double-side vacuum film formation and laminate obtainable by the method 有权双面真空成膜方法和通过该方法得到的层压体公开(公告)号：US09249503B2
公开(公告)日：2016-02-02
申请号：US13559094
申请日：2012-07-26
申请人： Tomotake Nashiki , Yoshimasa Sakata , Hideo Sugawara , Kenkichi Yagura , Akira Hamada , Yoshihisa Ito , Kuniaki Ishibashi
发明人： Tomotake Nashiki , Yoshimasa Sakata , Hideo Sugawara , Kenkichi Yagura , Akira Hamada , Yoshihisa Ito , Kuniaki Ishibashi
IPC分类号： C23C14/56
CPC分类号： C23C14/562 , Y10T428/31678
摘要： The film formation method comprises the steps of: unrolling and feeding an elongated substrate wound in a roll form from a first roll chamber in a first direction from the first roll chamber toward a second roll chamber, using a first surface as a surface for film formation; degassing the substrate fed in the first direction; forming a second material film on the first surface of the substrate in a second film formation chamber; taking up the substrate in a roll form in the second roll chamber, the substrate having the second material film formed thereon; unrolling and feeding the substrate from the second roll chamber in a second direction from the second roll chamber toward the first roll chamber; forming a first material film on the second material film in a first film formation chamber; taking up the substrate in a roll form in the first roll chamber.
摘要翻译： 成膜方法包括以下步骤：使用第一表面作为成膜表面，从第一辊室向第二辊室，以第一方向从第一辊室开始卷绕并卷绕成卷状的细长衬底 ; 对沿第一方向进给的基板进行脱气; 在第二成膜室中在所述基板的第一表面上形成第二材料膜; 在第二辊室中以辊状卷取基板，其上形成有第二材料膜的基板; 从第二辊室朝向第一辊室从第二辊室向第二方向展开和供给衬底; 在第一成膜室中在第二材料膜上形成第一材料膜; 在第一辊室中以辊状卷取基材。
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10.发明授权Method for double-side vacuum film formation and laminate obtainable by the method 有权双面真空成膜方法和通过该方法得到的层压体公开(公告)号：US09243320B2
公开(公告)日：2016-01-26
申请号：US13559155
申请日：2012-07-26
申请人： Tomotake Nashiki , Yoshimasa Sakata , Hideo Sugawara , Kenkichi Yagura , Akira Hamada , Yoshihisa Ito , Kuniaki Ishibashi
发明人： Tomotake Nashiki , Yoshimasa Sakata , Hideo Sugawara , Kenkichi Yagura , Akira Hamada , Yoshihisa Ito , Kuniaki Ishibashi
IPC分类号： C23C14/56
CPC分类号： C23C14/562 , Y10T428/31678
摘要： The film formation method comprises the steps of: unrolling and feeding an elongated substrate wound in a roll form from a first roll chamber in a first direction from the first roll chamber toward a second roll chamber; degassing the fed substrate; forming a first material film on a first surface in a first film formation chamber; guiding the substrate having the first material film formed thereon to a second film formation chamber in a second direction from the second roll chamber toward the first roll chamber; forming, in the second film formation chamber, a second material film on a second surface opposite the first surface of the substrate when it is being guided in the second direction; taking up, in a third roll chamber provided between the first roll chamber and the second roll chamber, the substrate in a roll state.
摘要翻译： 成膜方法包括以下步骤：从第一方向从第一辊室向第二辊室展开卷绕并卷绕成卷状的细长基材从第一辊室; 对进料基材进行脱气; 在第一成膜室中的第一表面上形成第一材料膜; 将其上形成有第一材料膜的基板从第二辊室朝向第一辊室沿第二方向引导到第二成膜室; 在所述第二成膜室中，当在所述第二方向上被引导时，在与所述基板的所述第一表面相对的第二表面上形成第二材料膜; 在设置在第一辊室和第二辊室之间的第三辊室中卷绕处于辊状态的基板。
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