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1.发明授权Semiconductor device with variable resistance element and method for manufacturing the same 有权具有可变电阻元件的半导体器件及其制造方法公开(公告)号：US08766233B2
公开(公告)日：2014-07-01
申请号：US13499956
申请日：2010-10-04
IPC分类号： H01L47/00
CPC分类号： H01L21/02186 , H01L21/02183 , H01L21/022 , H01L21/02244 , H01L21/02266 , H01L27/101 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1608
摘要： A semiconductor device includes at least first and second electrodes, and a layer including a transition metal oxide layer sandwiched between the first and second electrodes. The transition metal oxide layer includes first and second transition metal oxide layers formed of different first and second transition metals, respectively. The first transition metal oxide layer is provided on the first electrode side, the second transition metal oxide layer is provided on the second electrode side, the first transition metal oxide layer and the second transition metal oxide layer are in contact with each other, the first transition metal oxide layer has an oxygen concentration gradient from the interface between the first transition metal oxide layer and the second transition metal oxide layer toward the first electrode side, and the oxygen concentration at the interface is greater than the oxygen concentration on the first electrode side.
摘要翻译： 半导体器件至少包括第一和第二电极，以及包括夹在第一和第二电极之间的过渡金属氧化物层的层。 过渡金属氧化物层分别包括由不同的第一和第二过渡金属形成的第一和第二过渡金属氧化物层。 第一过渡金属氧化物层设置在第一电极侧，第二过渡金属氧化物层设置在第二电极侧，第一过渡金属氧化物层和第二过渡金属氧化物层彼此接触，第一过渡金属氧化物层 过渡金属氧化物层具有从第一过渡金属氧化物层和第二过渡金属氧化物层之间的界面朝向第一电极侧的氧浓度梯度，并且界面处的氧浓度大于第一电极侧的氧浓度 。
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公开(公告)号：US20120267598A1
公开(公告)日：2012-10-25
申请号：US13499956
申请日：2010-10-04
CPC分类号： H01L21/02186 , H01L21/02183 , H01L21/022 , H01L21/02244 , H01L21/02266 , H01L27/101 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1608
摘要： A semiconductor device includes at least first and second electrodes, and a layer including a transition metal oxide layer sandwiched between the first and second electrodes. The transition metal oxide layer includes first and second transition metal oxide layers formed of different first and second transition metals, respectively. The first transition metal oxide layer is provided on the first electrode side, the second transition metal oxide layer is provided on the second electrode side, the first transition metal oxide layer and the second transition metal oxide layer are in contact with each other, the first transition metal oxide layer has an oxygen concentration gradient from the interface between the first transition metal oxide layer and the second transition metal oxide layer toward the first electrode side, and the oxygen concentration at the interface is greater than the oxygen concentration on the first electrode side.
摘要翻译： 半导体器件至少包括第一和第二电极，以及包括夹在第一和第二电极之间的过渡金属氧化物层的层。 过渡金属氧化物层分别包括由不同的第一和第二过渡金属形成的第一和第二过渡金属氧化物层。 第一过渡金属氧化物层设置在第一电极侧，第二过渡金属氧化物层设置在第二电极侧，第一过渡金属氧化物层和第二过渡金属氧化物层彼此接触，第一过渡金属氧化物层 过渡金属氧化物层具有从第一过渡金属氧化物层和第二过渡金属氧化物层之间的界面朝向第一电极侧的氧浓度梯度，并且界面处的氧浓度大于第一电极侧的氧浓度 。
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3.发明授权公开(公告)号：US08710478B2
公开(公告)日：2014-04-29
申请号：US13474690
申请日：2012-05-17
申请人： Yukihiro Sakotsubo
发明人： Yukihiro Sakotsubo
IPC分类号： H01L29/02
CPC分类号： H01L45/04 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/146 , H01L45/1675
摘要： Provided is a resistance change type nonvolatile semiconductor storage device including a diode capable of passing therethrough a sufficient current to a resistance changing operation even when the memory cell is miniaturized. A nonvolatile semiconductor storage device has first wires extending in X direction, second wires extending in Y direction, and memory cells disposed at intersection points of the first wires and the second wires. The memory cell includes a diode disposed over the first wire, and coupled to the first wire at one end, and a resistance change part disposed over the diode, and series-coupled to the diode at one end, and coupled to the second wire at the other end, and storing information through changes in resistance value. The diode includes a first conductivity type first semiconductor layer, and a second conductivity type second semiconductor layer extending into the inside of the first semiconductor layer.
摘要翻译： 提供一种电阻变化型非易失性半导体存储装置，其包括即使当存储单元小型化时也能够将足够的电流通过电阻改变操作的二极管。 非易失性半导体存储装置具有沿X方向延伸的第一线，在Y方向上延伸的第二线，以及设置在第一线和第二线的交叉点的存储单元。 存储单元包括设置在第一导线上并在一端耦合到第一导线的二极管和设置在二极管上的电阻变化部分，并且在一端串联耦合到二极管，并且耦合到第二导线 另一端，通过电阻值的变化存储信息。 二极管包括第一导电型第一半导体层和延伸到第一半导体层内部的第二导电类型的第二半导体层。
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4.发明授权公开(公告)号：US08598564B2
公开(公告)日：2013-12-03
申请号：US13592574
申请日：2012-08-23
申请人： Yukihiro Sakotsubo
发明人： Yukihiro Sakotsubo
IPC分类号： H01L47/00
CPC分类号： G11C13/0004 , G11C13/0007 , G11C13/0069 , G11C2013/0071 , G11C2013/0083 , G11C2213/52 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1675
摘要： A nonvolatile semiconductor memory device has a first wire, a second wire, and a memory cell electrically coupled to the first wire at one end and to the second wire at the other end. The memory cell has a resistance change layer to store information by changing a resistance value and a first electrode and a second electrode coupled to both ends of the resistance change layer and not containing a precious metal. The first electrode includes an outside electrode and an interface electrode formed between the outside electrode and the resistance change layer. The thickness of the interface electrode is less than the thickness of the outside electrode. The resistivity of the interface electrode is higher than the resistivity of the outside electrode. The resistance value of the first electrode is lower than the resistance value of the resistance change layer in a low resistance state.
摘要翻译： 非易失性半导体存储器件具有第一线，第二线和存储单元，所述第一线，第二线和存储单元在一端电耦合到第一线，而另一端电连接到第二线。 存储单元具有通过改变电阻值来存储信息的电阻变化层和耦合到电阻变化层的两端并且不含贵金属的第一电极和第二电极。 第一电极包括形成在外部电极和电阻变化层之间的外部电极和界面电极。 界面电极的厚度小于外部电极的厚度。 界面电极的电阻率高于外部电极的电阻率。 在低电阻状态下，第一电极的电阻值低于电阻变化层的电阻值。
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